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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Lead Pitch Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Reference Standard Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Isolation Voltage Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
    IPW60R180C7XKSA1 IPW60R180C7XKSA1 Infineon Technologies $0.00
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    		 download 18 Weeks Tube 2008 CoolMOS™ C7 yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE DRAIN 68W Tc SWITCHING 0.18Ohm 600V SILICON N-Channel 180m Ω @ 5.3A, 10V 4V @ 260μA 1080pF @ 400V 24nC @ 10V 13A 13A Tc 600V 45A 53 mJ 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2007 HEXFET® Active 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant Lead Free No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-220-3 No SVHC 9.017mm 4.826mm 3.3MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 130W 150 ns 4V 300W Tc 75A SWITCHING 93 ns SILICON N-Channel 3.3m Ω @ 75A, 10V 4V @ 250μA 7960pF @ 25V 290nC @ 10V 20ns 78 ns 20V 55V 75A Tc 890A 940 mJ 10V ±20V
    IPP410N30NAKSA1 IPP410N30NAKSA1 Infineon Technologies $0.00
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    		 download 13 Weeks Through Hole Tube 2013 OptiMOS™ yes Active 1 (Unlimited) 3 ROHS3 Compliant Contains Lead TO-220-3 20.7mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED R-PSFM-T3 1 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN Halogen Free 300W 16 ns 300V 300W Tc 44A 175°C 43 ns SILICON N-Channel 41m Ω @ 44A, 10V 4V @ 270μA 7180pF @ 100V 87nC @ 10V 20V 300V 44A Tc 240 mJ 10V ±20V
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    		 download 10 Weeks Through Hole Tube 2006 OptiMOS™ yes Active 1 (Unlimited) 3 ROHS3 Compliant TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 55V 158W Tc 77A 0.012Ohm SILICON N-Channel 12m Ω @ 38A, 10V 4V @ 93μA 1770pF @ 25V 60nC @ 10V 77A Tc 308A 280 mJ 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2004 HEXFET® Active 1 (Unlimited) 3 EAR99 10.6426mm ROHS3 Compliant Lead Free 130A No 3 TO-220-3 No SVHC 2.54mm 4.82mm 4.826mm 6.3MOhm Through Hole -55°C~175°C TJ 75V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 200W 26 ns 4V 200W Tc 130A SWITCHING 51 ns SILICON N-Channel 6.3m Ω @ 75A, 10V 4V @ 150μA 5150pF @ 50V 180nC @ 10V 120ns 63 ns 20V 75V 75V 4 V 75A 130A Tc 270 mJ 10V ±20V
    IPL65R130C7AUMA1 IPL65R130C7AUMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2010 CoolMOS™ C7 Active 2A (4 Weeks) 4 ROHS3 Compliant Contains Lead 4 4-PowerTSFN not_compliant Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) NO LEAD NOT SPECIFIED NOT SPECIFIED 1 1 DRAIN Halogen Free Single 102W 11 ns 650V 102W Tc 15A SWITCHING 87 ns SILICON N-Channel 130m Ω @ 4.4A, 10V 4V @ 440μA 1670pF @ 400V 35nC @ 10V 5.3ns 12 ns 20V 650V 15A Tc 75A 89 mJ 10V ±20V
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    		 download 18 Weeks Tube 2018 CoolMOS™ P7 Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-220-3 Full Pack Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED 30W Tc SWITCHING 0.28Ohm 800V SILICON N-Channel 280m Ω @ 7.2A, 10V 3.5V @ 360μA 1200pF @ 500V 36nC @ 10V 17A Tc 800V 45A 43 mJ 10V ±20V
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    		 download 12 Weeks Through Hole Tube 1997 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.7442mm ROHS3 Compliant Lead Free 64A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE TO-220-3 Full Pack No SVHC 9.8mm 4.826mm 8mOhm Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB ISOLATED Single 63W 14 ns 4V 63W Tc 170 ns 64A SWITCHING 2kV 43 ns SILICON N-Channel 8m Ω @ 34A, 10V 4V @ 250μA 4000pF @ 25V 170nC @ 10V 100ns 70 ns 20V 55V 55V 4 V 56A 64A Tc 480 mJ 10V ±20V
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    		 download 13 Weeks Through Hole Tube 2008 OptiMOS™ no Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead 3 TO-220-3 not_compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 214W 24 ns 60V 3W Ta 214W Tc 120A SWITCHING 0.002Ohm 51 ns SILICON N-Channel 2m Ω @ 100A, 10V 2.8V @ 143μA 7800pF @ 30V 106nC @ 10V 45ns 19 ns 20V 60V 29A 29A Ta 120A Tc 480A 420 mJ 6V 10V ±20V
    IPS65R1K4C6AKMA1 IPS65R1K4C6AKMA1 Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2008 CoolMOS™ no Not For New Designs 1 (Unlimited) EAR99 6.73mm ROHS3 Compliant Contains Lead 3 TO-251-3 Stub Leads, IPak not_compliant 6.22mm 2.39mm Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED 1 Halogen Free Single 28W 7.7 ns 650V 28W Tc 3.2A 33 ns N-Channel 1.4 Ω @ 1A, 10V 3.5V @ 100μA 225pF @ 100V 10.5nC @ 10V 20V 3.2A Tc 10V ±20V
    IRFS4410TRLPBF IRFS4410TRLPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2007 HEXFET® Active 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Contains Lead 96A No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm 10MOhm Surface Mount -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 1 1 DRAIN Single 200W 24 ns 4V 200W Tc 96A SWITCHING 55 ns SILICON N-Channel 10m Ω @ 58A, 10V 4V @ 150μA 5150pF @ 50V 180nC @ 10V 80ns 50 ns 20V 100V 4 V 75A 88A Tc 220 mJ 10V ±20V
    IPP120N04S302AKSA1 IPP120N04S302AKSA1 Infineon Technologies $0.00
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    		 download 12 Weeks Tube 2006 OptiMOS™ Not For New Designs 1 (Unlimited) 3 EAR99 ROHS3 Compliant ULTRA LOW RESISTANCE TO-220-3 not_compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-220AB 300W Tc 0.0023Ohm 40V SILICON N-Channel 2.3m Ω @ 80A, 10V 4V @ 230μA 14300pF @ 25V 210nC @ 10V 120A 120A Tc 40V 480A 1880 mJ 10V ±20V
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    		 download 16 Weeks Through Hole Tube 2011 HEXFET® Active 1 (Unlimited) 3 EAR99 10.67mm ROHS3 Compliant Tin No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-262-3 Wide Leads No SVHC 11.3mm 4.83mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 FET General Purpose Power 1 TO-262AA Single 300W 18 ns 2V 300W Tc 240A SWITCHING 75 ns SILICON N-Channel 1.3m Ω @ 195A, 10V 4V @ 250μA 7630pF @ 19V 180nC @ 10V 200ns 110 ns 20V 24V 2 V 240A Tc 10V ±20V
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    		 download 18 Weeks Tape & Reel (TR) 2014 CoolMOS™ P7 Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 60W Tc SWITCHING 0.6Ohm 800V SILICON N-Channel 600m Ω @ 3.4A, 10V 3.5V @ 170μA 570pF @ 500V 20nC @ 10V 8A Tc 800V 22A 20 mJ 10V ±20V
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    		 download 26 Weeks Surface Mount Tape & Reel (TR) 2012 OptiMOS™ no Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant Contains Lead Tin No 8 8-PowerTDFN Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL FLAT 8 R-PDSO-F5 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 2.5W 6.7 ns 30V 2.5W Ta 96W Tc 37A SWITCHING 37 ns SILICON N-Channel 1.1m Ω @ 30A, 10V 2.2V @ 250μA 4700pF @ 15V 72nC @ 10V 8.8ns 6.2 ns 20V 37A Ta 100A Tc 400A 4.5V 10V ±20V
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2008 CoolMOS™ P6 Active 1 (Unlimited) 5 ROHS3 Compliant Contains Lead 8 8-PowerTDFN Surface Mount 75.891673mg -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL NO LEAD NOT SPECIFIED NOT SPECIFIED R-PDSO-N5 1 1 DRAIN Halogen Free Single 12 ns 600V 89.3W Tc 11.3A SWITCHING 0.36Ohm 33 ns SILICON N-Channel 360m Ω @ 4.5A, 10V 4.5V @ 370μA 1010pF @ 100V 22nC @ 10V 7ns 7 ns 30V 11.3A Tc 30A 247 mJ 10V ±20V
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    		 download 14 Weeks Surface Mount Tape & Reel (TR) 2006 OptiMOS™ Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 17 ns 100V 125W Tc 70A 0.0111Ohm 25 ns SILICON N-Channel 11.1m Ω @ 70A, 10V 4V @ 83μA 4355pF @ 25V 65nC @ 10V 8ns 20V 70A Tc 280A 410 mJ 10V ±20V
    IPD60R280P7ATMA1 IPD60R280P7ATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Tape & Reel (TR) 2014 CoolMOS™ P7 Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE 53W Tc SWITCHING 0.28Ohm 600V SILICON N-Channel 280m Ω @ 3.8A, 10V 4V @ 190μA 761pF @ 400V 18nC @ 10V 12A Tc 600V 36A 38 mJ 10V ±20V
    BSC052N08NS5ATMA1 BSC052N08NS5ATMA1 Infineon Technologies $0.00
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    		 download 26 Weeks Surface Mount Tape & Reel (TR) 2013 OptiMOS™ yes Active 1 (Unlimited) 5 ROHS3 Compliant Contains Lead 8 8-PowerTDFN not_compliant 1.1mm Surface Mount 506.605978mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL FLAT NOT SPECIFIED NOT SPECIFIED R-PDSO-F5 1 1 DRAIN Halogen Free Single 2.5W 12 ns 80V 2.5W Ta 83W Tc 19A 150°C SWITCHING 0.0052Ohm 19 ns SILICON N-Channel 5.2m Ω @ 47.5A, 10V 3.8V @ 49μA 2900pF @ 40V 40nC @ 10V 7ns 5 ns 20V 80V 95A Tc 70 mJ 6V 10V ±20V
    IRF6613TRPBF IRF6613TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2006 HEXFET® Active 1 (Unlimited) 3 EAR99 6.35mm ROHS3 Compliant Lead Free 23A No 5 LOW CONDUCTION LOSS DirectFET™ Isometric MT No SVHC 508μm 5.0546mm 3.4MOhm Surface Mount -40°C~150°C TJ 40V MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) BOTTOM 260 30 R-XBCC-N3 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 89W 18 ns 2.25V 2.8W Ta 89W Tc 150mA SWITCHING 27 ns SILICON N-Channel 3.4m Ω @ 23A, 10V 2.25V @ 250μA 5950pF @ 15V 63nC @ 4.5V 47ns 4.9 ns 20V 40V 23A Ta 150A Tc 200 mJ 4.5V 10V ±20V
    IRFH5020TRPBF IRFH5020TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2012 HEXFET® Active 1 (Unlimited) 5 EAR99 6mm ROHS3 Compliant Lead Free No 8 HIGH RELIABILITY 8-PowerTDFN No SVHC 1.05mm 5mm 55MOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL R-PDSO-N5 1 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.6W 9.3 ns 5V 3.6W Ta 8.3W Tc 5.1A 150°C SWITCHING 21 ns SILICON N-Channel 55m Ω @ 7.5A, 10V 5V @ 150μA 2290pF @ 100V 54nC @ 10V 7.7ns 6 ns 20V 200V 43A 5.1A Ta 63A 320 mJ 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2004 HEXFET® Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant Lead Free No 8 8-VQFN Exposed Pad No SVHC Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL 260 30 R-PDSO-N5 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 104W 6.7 ns 5V 3.6W Ta 104W Tc 5A SWITCHING 11 ns SILICON N-Channel 58m Ω @ 16A, 10V 5V @ 100μA 1350pF @ 50V 32nC @ 10V 6.3ns 2.9 ns 20V 150V 5 V 5A 5A Ta 27A Tc 96 mJ 10V ±20V
    IPC100N04S51R9ATMA1 IPC100N04S51R9ATMA1 Infineon Technologies $0.00
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    		 download 16 Weeks Tape & Reel (TR) 2016 Automotive, AEC-Q101, OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant 8-PowerTDFN not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL FLAT NOT SPECIFIED NOT SPECIFIED YES R-PDSO-F3 1 SINGLE WITH BUILT-IN DIODE DRAIN 100W Tc 0.0023Ohm 40V SILICON N-Channel 1.9m Ω @ 50A, 10V 3.4V @ 50μA 3770pF @ 25V 65nC @ 10V 100A 100A Tc 40V 400A 130 mJ 7V 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2007 HEXFET® Active 1 (Unlimited) 3 EAR99 6.35mm ROHS3 Compliant Lead Free 30A No 5 DirectFET™ Isometric MT No SVHC 508μm 5.0546mm 2.2MOhm Surface Mount -40°C~150°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) BOTTOM 260 30 R-XBCC-N3 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 89W 21 ns 1.64V 2.8W Ta 89W Tc 170mA SWITCHING 27 ns SILICON N-Channel 2.2m Ω @ 30A, 10V 2.35V @ 250μA 5640pF @ 15V 65nC @ 4.5V 71ns 8.1 ns 20V 30V 29A 30A Ta 170A Tc 240A 4.5V 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2010 HEXFET® Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free No 7 DirectFET™ Isometric M2 No SVHC Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE BOTTOM R-XBCC-N3 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 45W 10 ns 4V 2.7W Ta 45W Tc 4.4A AMPLIFIER 0.056Ohm 14 ns SILICON N-Channel 56m Ω @ 11A, 10V 5V @ 100μA 1360pF @ 25V 32nC @ 10V 13ns 7.5 ns 20V 150V 90A 4.4A Ta 18A Tc 10V ±20V
    IPD110N12N3GATMA1 IPD110N12N3GATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2015 OptiMOS™ Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 16 ns 120V 136W Tc 75A SWITCHING 0.011Ohm 24 ns SILICON N-Channel 11m Ω @ 75A, 10V 3V @ 83μA (Typ) 4310pF @ 60V 65nC @ 10V 8 ns 20V 75A Tc 120 mJ 10V ±20V
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    		 11 Weeks Surface Mount Tape & Reel (TR) 2013 HEXFET® Not For New Designs 1 (Unlimited) 5 EAR99 5.85mm ROHS3 Compliant 8 ULTRA LOW RESISTANCE 8-PowerTDFN 1.17mm 5mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL FLAT NOT SPECIFIED NOT SPECIFIED IRFN8403 R-PDSO-F5 1 FET General Purpose Power 1 DRAIN Single 11 ns 4.3W Ta 94W Tc 95A SWITCHING 0.0033Ohm 40V 33 ns SILICON N-Channel 3.3m Ω @ 50A, 10V 3.9V @ 100μA 3174pF @ 25V 98nC @ 10V 37ns 26 ns 20V 95A Tc 40V 492A 10V ±20V
    BSC027N06LS5ATMA1 BSC027N06LS5ATMA1 Infineon Technologies $0.00
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    		 download 26 Weeks Tape & Reel (TR) 2013 OptiMOS™ Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant 8-PowerTDFN Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL FLAT NOT SPECIFIED NOT SPECIFIED YES R-PDSO-F5 1 SINGLE WITH BUILT-IN DIODE DRAIN 83W Tc SWITCHING 0.0027Ohm 60V SILICON N-Channel 2.7m Ω @ 50A, 10V 2.3V @ 49μA 4400pF @ 30V 30nC @ 4.5V 23A 100A Tc 60V 400A 100 mJ 4.5V 10V ±20V
    BSC028N06NSTATMA1 BSC028N06NSTATMA1 Infineon Technologies $0.00
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    		 download 26 Weeks Tape & Reel (TR) OptiMOS™ Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant 8-PowerTDFN Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL FLAT YES R-PDSO-F5 1 SINGLE WITH BUILT-IN DIODE DRAIN 3W Ta 100W Tc SWITCHING 0.0028Ohm 60V SILICON N-Channel 2.8m Ω @ 50A, 10V 3.3V @ 50μA 3375pF @ 30V 49nC @ 10V 23A 24A Ta 100A Tc 60V 400A 100 mJ 6V 10V ±20V
    IRL3705NSTRLPBF IRL3705NSTRLPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2004 HEXFET® Active 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Contains Lead, Lead Free Tin 89A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.699mm 10.16mm 10mOhm Surface Mount -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 1 DRAIN Single 170W 12 ns 2V 3.8W Ta 170W Tc 140 ns 89A SWITCHING 37 ns SILICON N-Channel 10m Ω @ 46A, 10V 2V @ 250μA 3600pF @ 25V 98nC @ 5V 140ns 78 ns 16V 55V 2 V 89A Tc 4V 10V ±16V