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Infineon Technologies(12661)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Lead Pitch | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | FET Feature | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Feedback Cap-Max (Crss) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRFS4115TRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.826mm | 9.652mm | 11.8MOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 375W | 18 ns | 375W Tc | 195A | SWITCHING | 41 ns | SILICON | N-Channel | 12.1m Ω @ 62A, 10V | 5V @ 250μA | 5270pF @ 50V | 120nC @ 10V | 73ns | 39 ns | 20V | 150V | 99A | 195A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRFS4321TRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | HEXFET® | Active | 1 (Unlimited) | 175°C | -55°C | 10.668mm | ROHS3 Compliant | Lead Free | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 5.084mm | 9.65mm | 15MOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | 1 | 1 | Single | 350W | 18 ns | 5V | 12mOhm | D2PAK | 350W Tc | 85A | 175°C | 25 ns | N-Channel | 15mOhm @ 33A, 10V | 5V @ 250μA | 4460pF @ 25V | 110nC @ 10V | 60ns | 35 ns | 30V | 150V | 5 V | 85A Tc | 150V | 4.46nF | 10V | ±30V | 15 mΩ | ||||||||||||||||||||||||||||||||||||||||||||
| SPB80P06PGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 1999 | SIPMOS® | no | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | -80A | 3 | AVALANCHE RATED | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | 4.4mm | Surface Mount | -55°C~175°C TJ | -60V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | 1 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 340W | 24 ns | -3V | -60V | 340W Tc | -80A | 175°C | 56 ns | SILICON | P-Channel | 23m Ω @ 64A, 10V | 4V @ 5.5mA | 5033pF @ 25V | 173nC @ 10V | 18ns | 30 ns | 20V | -60V | 80A Tc | 60V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| BSZ060NE2LSATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | no | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | 8-PowerTDFN | No SVHC | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 8 | S-PDSO-N3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.1W | 2.5 ns | 2V | 25V | 2.1W Ta 26W Tc | 12A | SWITCHING | 11 ns | SILICON | N-Channel | 6m Ω @ 20A, 10V | 2V @ 250μA | 670pF @ 12V | 9.1nC @ 10V | 2.2ns | 1.8 ns | 20V | 12A Ta 40A Tc | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| BSC054N04NSGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 57W | 40V | 2.5W Ta 57W Tc | 17A | SWITCHING | 0.0054Ohm | SILICON | N-Channel | 5.4m Ω @ 50A, 10V | 4V @ 27μA | 2800pF @ 20V | 34nC @ 10V | 2.6ns | 20V | 17A Ta 81A Tc | 324A | 35 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRFL4315TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 1999 | HEXFET® | Active | 1 (Unlimited) | 4 | EAR99 | 6.6802mm | ROHS3 Compliant | Contains Lead, Lead Free | 2.6A | No | 3 | TO-261-4, TO-261AA | No SVHC | 1.8mm | 3.7mm | 185Ohm | Surface Mount | -55°C~150°C TJ | 150V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | R-PDSO-G4 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 2.8W | 8.4 ns | 5V | 2.8W Ta | 2.6A | 150°C | SWITCHING | 20 ns | SILICON | N-Channel | 185m Ω @ 1.6A, 10V | 5V @ 250μA | 420pF @ 25V | 19nC @ 10V | 21ns | 19 ns | 30V | 150V | 150V | 5 V | 2.6A Ta | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| BSC050N04LSGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 39 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | 8-PowerTDFN | No SVHC | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 57W | 40V | 2.5W Ta 57W Tc | 85A | SWITCHING | 0.0072Ohm | SILICON | N-Channel | 5m Ω @ 50A, 10V | 2V @ 27μA | 3700pF @ 20V | 47nC @ 10V | 3.8ns | 20V | 18A Ta 85A Tc | 340A | 35 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SPD09P06PLGBTMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | SIPMOS® | no | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AB | Not Halogen Free | 42W | -60V | 42W Tc | 9.7A | 0.25Ohm | SILICON | P-Channel | 250m Ω @ 6.8A, 10V | 2V @ 250μA | 450pF @ 25V | 21nC @ 10V | 20V | 9.7A Tc | 60V | 70 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRF1310NSTRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 1998 | HEXFET® | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | Tin | 42A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.826mm | 9.65mm | 36mOhm | Surface Mount | -55°C~175°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 3.8W | 11 ns | 4V | 3.8W Ta 160W Tc | 270 ns | 42A | SWITCHING | 45 ns | SILICON | N-Channel | 36m Ω @ 22A, 10V | 4V @ 250μA | 1900pF @ 25V | 110nC @ 10V | 56ns | 40 ns | 20V | 100V | 100V | 4 V | 42A Tc | 420 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IRF9Z34NPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 1997 | HEXFET® | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 10.5156mm | ROHS3 Compliant | Lead Free | Tin | -19A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-220-3 | No SVHC | 2.54mm | 8.77mm | 4.69mm | 100mOhm | Through Hole | -55°C~175°C TJ | -55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | 250 | 30 | Other Transistors | 1 | TO-220AB | DRAIN | Single | 56W | 13 ns | -4V | 68W Tc | 82 ns | -19A | SWITCHING | 30 ns | SILICON | P-Channel | 100m Ω @ 10A, 10V | 4V @ 250μA | 620pF @ 25V | 35nC @ 10V | 55ns | 41 ns | 20V | -55V | -55V | -4 V | 19A Tc | 55V | 68A | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IRF6614TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 4.826mm | ROHS3 Compliant | Lead Free | 12.7A | No | 5 | DirectFET™ Isometric ST | No SVHC | 506μm | 3.95mm | 8.3MOhm | Surface Mount | -40°C~150°C TJ | 40V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | R-XBCC-N3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 42W | 13 ns | 1.8V | 2.1W Ta 42W Tc | 10.1A | SWITCHING | 18 ns | SILICON | N-Channel | 8.3m Ω @ 12.7A, 10V | 2.25V @ 250μA | 2560pF @ 20V | 29nC @ 4.5V | 27ns | 3.6 ns | 20V | 40V | 12.7A Ta 55A Tc | 22 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| BSC160N15NS5ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Tape & Reel (TR) | 2013 | OptiMOS™ | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | 8-PowerTDFN | not_compliant | 1.1mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | YES | R-PDSO-F5 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 96W | 9.6 ns | 96W Tc | 56A | 150°C | SWITCHING | 10.8 ns | SILICON | N-Channel | 16m Ω @ 28A, 10V | 4.6V @ 60μA | 1820pF @ 75V | 23.1nC @ 10V | 20V | 150V | 56A Tc | 224A | 43 mJ | 8V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ520N15NS3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | No | 8 | 8-PowerTDFN | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | 8 | S-PDSO-N5 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 57W | 7 ns | 150V | 57W Tc | 21A | SWITCHING | 0.052Ohm | 10 ns | SILICON | N-Channel | 52m Ω @ 18A, 10V | 4V @ 35μA | 890pF @ 75V | 12nC @ 10V | 5ns | 3 ns | 20V | 21A Tc | 60 mJ | 8V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRL530NSTRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 10.668mm | ROHS3 Compliant | Contains Lead, Lead Free | 17A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.826mm | 9.65mm | 120mOhm | Surface Mount | -55°C~175°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 3.8W | 7.2 ns | 2V | 3.8W Ta 79W Tc | 210 ns | 17A | SWITCHING | 30 ns | SILICON | N-Channel | 100m Ω @ 9A, 10V | 2V @ 250μA | 800pF @ 25V | 34nC @ 5V | 53ns | 26 ns | 20V | 100V | 100V | 2 V | 17A Tc | 60A | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||
| BSZ042N06NSATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Cut Tape (CT) | 2006 | OptiMOS™ | no | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | 8-PowerTDFN | No SVHC | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | NO LEAD | 8 | S-PDSO-N3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.5W | 60V | 2.1W Ta 69W Tc | 40A | SWITCHING | 0.0042Ohm | SILICON | N-Channel | 4.2m Ω @ 20A, 10V | 2.8V @ 36μA | 2000pF @ 30V | 27nC @ 10V | 7ns | 20V | 17A Ta 40A Tc | 44 pF | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| BSC072N08NS5ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | yes | Active | 1 (Unlimited) | 5 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-F5 | 1 | 1 | DRAIN | Halogen Free | Single | 10 ns | 80V | 2.5W Ta 69W Tc | 74A | SWITCHING | 0.0072Ohm | 19 ns | SILICON | N-Channel | 7.2m Ω @ 37A, 10V | 3.8V @ 36μA | 2100pF @ 40V | 29nC @ 10V | 7ns | 5 ns | 20V | 74A Tc | 296A | 40 mJ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRF8714TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 8 | EAR99 | 4.9784mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.4986mm | 3.9878mm | 8.7MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 30 | FET General Purpose Power | 1 | Single | 2.5W | 10 ns | 2.5W Ta | 14A | SWITCHING | 11 ns | SILICON | N-Channel | 8.7m Ω @ 14A, 10V | 2.35V @ 25μA | 1020pF @ 15V | 12nC @ 4.5V | 9.9ns | 5 ns | 20V | 30V | 1.8 V | 14A Ta | 65 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| BSC028N06LS3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | No | 8 | LOGIC LEVEL COMPATIBLE | 8-PowerTDFN | 1.1mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | FLAT | 8 | R-PDSO-F5 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.5W | 19 ns | 60V | 2.5W Ta 139W Tc | 23A | 150°C | SWITCHING | 77 ns | SILICON | N-Channel | 2.8m Ω @ 50A, 10V | 2.2V @ 93μA | 13000pF @ 30V | 175nC @ 10V | 17ns | 20V | 60V | 23A Ta 100A Tc | 400A | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRF6674TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 6.35mm | ROHS3 Compliant | No | 5 | DirectFET™ Isometric MZ | No SVHC | 530μm | 5.05mm | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | R-XBCC-N3 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 89W | 7 ns | 4V | 3.6W Ta 89W Tc | 67A | SWITCHING | 12 ns | SILICON | N-Channel | 11m Ω @ 13.4A, 10V | 4.9V @ 100μA | 1350pF @ 25V | 36nC @ 10V | 12ns | 8.7 ns | 20V | 60V | 4 V | 13.4A Ta 67A Tc | 98 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| BSC600N25NS3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | 8-PowerTDFN | No SVHC | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | FLAT | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 125W | 250V | 125W Tc | 25A | SWITCHING | 0.06Ohm | SILICON | N-Channel | 60m Ω @ 25A, 10V | 4V @ 90μA | 2350pF @ 100V | 29nC @ 10V | 10ns | 20V | 25A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| BSC035N10NS5ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | yes | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | 1.1mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-F5 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.5W | 22 ns | 3V | 100V | 2.5W Ta 156W Tc | 100A | 150°C | SWITCHING | 0.0035Ohm | 47 ns | SILICON | N-Channel | 3.5m Ω @ 50A, 10V | 3.8V @ 115μA | 6500pF @ 50V | 87nC @ 10V | 20V | 100V | 100A Tc | 400A | 300 mJ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| BSC060N10NS3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 125W | 20 ns | 100V | 125W Tc | 14.9A | SWITCHING | 0.006Ohm | 45 ns | SILICON | N-Channel | 6m Ω @ 50A, 10V | 3.5V @ 90μA | 4900pF @ 50V | 68nC @ 10V | 16ns | 12 ns | 20V | 14.9A Ta 90A Tc | 360A | 230 mJ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| BSC014N06NSATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Cut Tape (CT) | 1997 | OptiMOS™ | no | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | 8-PowerTDFN | not_compliant | 1.1mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-F3 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 156W | 23 ns | 2.8V | 60V | 2.5W Ta 156W Tc | 100A | 150°C | SWITCHING | 43 ns | SILICON | N-Channel | 1.45m Ω @ 50A, 10V | 2.8V @ 120μA | 6500pF @ 30V | 89nC @ 10V | 10ns | 11 ns | 20V | 60V | 30A | 30A Ta 100A Tc | 400A | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IPB009N03LGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 39 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | no | Not For New Designs | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | 7 | LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | TO-263-7, D2Pak (6 Leads + Tab) | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G6 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-263AA | DRAIN | 250W | 26 ns | 250W Tc | 180A | SWITCHING | 30V | 103 ns | SILICON | N-Channel | 0.95m Ω @ 100A, 10V | 2.2V @ 250μA | 25000pF @ 15V | 227nC @ 10V | 14ns | 22 ns | 20V | 180A Tc | 30V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPD082N10N3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | OptiMOS™ | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 18 ns | 100V | 125W Tc | 80A | SWITCHING | 0.0082Ohm | 31 ns | SILICON | N-Channel | 8.2m Ω @ 73A, 10V | 3.5V @ 75μA | 3980pF @ 50V | 55nC @ 10V | 42ns | 8 ns | 20V | 80A Tc | 110 mJ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| BSC500N20NS3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Cut Tape (CT) | 2008 | OptiMOS™ | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-F5 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 200V | 96W Tc | 24A | SWITCHING | 0.05Ohm | SILICON | N-Channel | 50m Ω @ 22A, 10V | 4V @ 60μA | 1580pF @ 100V | 15nC @ 10V | 5ns | 20V | 24A Tc | 97A | 120 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| BSS127H6327XTSA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | SIPMOS® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 2.9mm | ROHS3 Compliant | Lead Free | Tin | 3 | LOGIC LEVEL COMPATIBLE | TO-236-3, SC-59, SOT-23-3 | No SVHC | 1mm | 1.3mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | Halogen Free | Single | 500mW | 6.1 ns | 600V | 500mW Ta | 21mA | 600Ohm | 14 ns | SILICON | N-Channel | 500 Ω @ 16mA, 10V | 2.6V @ 8μA | 28pF @ 25V | 1nC @ 10V | 9.7ns | 20V | 21mA Ta | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| BSS215PH6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | Tin | 3 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | TO-236-3, SC-59, SOT-23-3 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | Halogen Free | 500mW | -20V | 500mW Ta | 1.5A | SILICON | P-Channel | 150m Ω @ 1.5A, 4.5V | 1.2V @ 11μA | 346pF @ 15V | 3.6nC @ 4.5V | 9.7ns | 12V | 1.5A Ta | 20V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRLML2246TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 3.04mm | ROHS3 Compliant | Lead Free | No | 3 | TO-236-3, SC-59, SOT-23-3 | No SVHC | 1.02mm | 1.4mm | 236MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | Other Transistors | 1 | Single | 1.3W | 5.3 ns | -1.1V | 1.3W Ta | 26 ns | 2.6A | SWITCHING | 26 ns | SILICON | P-Channel | 135m Ω @ 2.6A, 4.5V | 1.1V @ 10μA | 220pF @ 16V | 2.9nC @ 4.5V | 7.7ns | 16 ns | 12V | -20V | -1.1 V | 2.6A Ta | 20V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||
| BSS159NH6906XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | SIPMOS® | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 3 | TO-236-3, SC-59, SOT-23-3 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | 8541.21.00.95 | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | SINGLE WITH BUILT-IN DIODE | 360mW Ta | 230mA | 60V | SILICON | N-Channel | 3.5 Ω @ 160mA, 10V | 2.4V @ 26μA | 44pF @ 25V | 2.9nC @ 5V | 2.9ns | 20V | Depletion Mode | 230mA Ta | 60V | 5.9 pF | 0V 10V | ±20V |