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Infineon Technologies(12661)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Reference Standard | Number of Elements | Configuration | JEDEC-95 Code | Forward Voltage | Case Connection | Halogen Free | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | FET Technology | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | FET Feature | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Feedback Cap-Max (Crss) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRFL014NTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 4 | EAR99 | 6.6802mm | ROHS3 Compliant | Lead Free | 1.9A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-261-4, TO-261AA | No SVHC | 1.4478mm | 3.7mm | 160mOhm | Surface Mount | -55°C~150°C TJ | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | R-PDSO-G4 | FET General Purpose Power | 1 | DRAIN | Single | 2.1W | 6.6 ns | 4V | 1W Ta | 61 ns | 1.9A | SWITCHING | 12 ns | SILICON | N-Channel | 160m Ω @ 1.9A, 10V | 4V @ 250μA | 190pF @ 25V | 11nC @ 10V | 7.1ns | 3.3 ns | 20V | 55V | 4 V | 2.7A | 1.9A Ta | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IPG20N06S2L50ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2003 | OptiMOS™ | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerVDFN | Surface Mount | -55°C~175°C TJ | ENHANCEMENT MODE | FLAT | NOT SPECIFIED | NOT SPECIFIED | *PG20N06 | R-PDSO-F | 51W | 51W | AEC-Q101 | 2 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | Halogen Free | 2 ns | 55V | 20A | 0.05Ohm | METAL-OXIDE SEMICONDUCTOR | 15 ns | SILICON | 2 N-Channel (Dual) | 50m Ω @ 15A, 10V | 2V @ 19μA | 560pF @ 25V | 17nC @ 10V | 3ns | 10 ns | 20V | Logic Level Gate | 60 mJ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSP88H6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | SIPMOS® | Active | 1 (Unlimited) | 150°C | -55°C | 6.5mm | ROHS3 Compliant | Lead Free | Tin | 4 | TO-261-4, TO-261AA | 1.6mm | 3.5mm | Surface Mount | 250.212891mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 1 | Halogen Free | 1.8W | 3.6 ns | 240V | 6Ohm | PG-SOT223-4 | 1.8W Ta | 350mA | 17.9 ns | N-Channel | 6Ohm @ 350mA, 10V | 1.4V @ 108μA | 95pF @ 25V | 6.8nC @ 10V | 3.5ns | 18.9 ns | 20V | 240V | 350mA Ta | 240V | 76pF | 2.8V 10V | ±20V | 600 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLMS2002TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | HEXFET® | Active | 1 (Unlimited) | 6 | EAR99 | 2.9972mm | ROHS3 Compliant | Lead Free | Tin | 6.5A | No | 3 | ULTRA-LOW RESISTANCE | SOT-23-6 | No SVHC | 1.143mm | 1.75mm | 300mOhm | Surface Mount | -55°C~150°C TJ | 20V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | R-PDSO-G6 | 1 | Single | 2W | 8.5 ns | 1.2V | 2W Ta | 6.5A | SWITCHING | 36 ns | SILICON | N-Channel | 30m Ω @ 6.5A, 4.5V | 1.2V @ 250μA | 1310pF @ 15V | 22nC @ 5V | 11ns | 16 ns | 12V | 20V | 1.2 V | 6.5A Ta | 20A | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||
| BSC0925NDATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | no | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | Tin | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | ENHANCEMENT MODE | e3 | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F6 | 2.5W | 2 | DRAIN SOURCE | Halogen Free | 2.5W | 4.7 ns | 15A | SWITCHING | 0.007Ohm | 30V | METAL-OXIDE SEMICONDUCTOR | 17 ns | SILICON | 2 N Channel (Dual Buck Chopper) | 5m Ω @ 20A, 10V | 2V @ 250μA | 1157pF @ 15V | 17nC @ 10V | 3.8ns | 3 ns | 20V | Standard | 11A | 30V | 160A | 14 mJ | |||||||||||||||||||||||||||||||||||||||||||||||||
| BSR202NL6327HTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Tin | 3 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | TO-236-3, SC-59, SOT-23-3 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 8541.21.00.95 | e3 | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | 20V | 500mW Ta | 3.8A | 0.021Ohm | SILICON | N-Channel | 21m Ω @ 3.8A, 4.5V | 1.2V @ 30μA | 1147pF @ 10V | 8.8nC @ 4.5V | 16.7ns | 12V | 3.8A Ta | 60 pF | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSR315PH6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | SIPMOS® | Active | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | Lead Free | 3 | TO-236-3, SC-59, SOT-23-3 | No SVHC | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | Halogen Free | 8 ns | -1.5V | -60V | 620mOhm | PG-SC-59 | 500mW Ta | 620mA | 21 ns | P-Channel | 800mOhm @ 620mA, 10V | 2V @ 160μA | 176pF @ 25V | 6nC @ 10V | 28ns | 20 ns | 20V | 620mA Ta | 60V | 176pF | 4.5V 10V | ±20V | 800 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS87H6327FTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tape & Reel (TR) | 1997 | SIPMOS® | yes | Not For New Designs | 1 (Unlimited) | 4 | SMD/SMT | EAR99 | 4.5mm | ROHS3 Compliant | Lead Free | No | 3 | LOGIC LEVEL COMPATIBLE | TO-243AA | No SVHC | 1.5mm | 2.5mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | 4 | R-PDSO-F4 | 1 | 1 | DRAIN | Single | 1W | 3.7 ns | 1.5V | 240V | 1W Ta | 290mA | 6Ohm | 17.6 ns | SILICON | N-Channel | 6 Ω @ 260mA, 10V | 1.8V @ 108μA | 97pF @ 25V | 5.5nC @ 10V | 3.5ns | 27.3 ns | 20V | 240V | 240V | 1.5 V | 0.26A | 260mA Ta | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IPD090N03LGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | OptiMOS™ | no | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | 3 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | Not Qualified | 1 | DRAIN | Single | 42W | 4 ns | 42W Tc | 40A | SWITCHING | 15 ns | SILICON | N-Channel | 9m Ω @ 30A, 10V | 2.2V @ 250μA | 1600pF @ 15V | 15nC @ 10V | 3ns | 2.6 ns | 20V | 30V | 40A Tc | 280A | 70 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPD60R3K3C6ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | CoolMOS™ C6 | Not For New Designs | 1 (Unlimited) | 2 | 6.73mm | ROHS3 Compliant | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | 2.41mm | 6.22mm | Surface Mount | 3.949996g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | 1 | DRAIN | Single | 8 ns | 600V | 18.1W Tc | 1.7A | SWITCHING | 40 ns | SILICON | N-Channel | 3.3 Ω @ 500mA, 10V | 3.5V @ 40μA | 93pF @ 100V | 4.6nC @ 10V | 10ns | 60 ns | 30V | 1.7A Tc | 4A | 6 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPD30N06S4L23ATMA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | Automotive, AEC-Q101, OptiMOS™ | yes | Active | 1 (Unlimited) | 2 | 6.73mm | ROHS3 Compliant | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | 2.41mm | 6.22mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | DRAIN | Halogen Free | Single | 4 ns | 60V | 36W Tc | 30A | SWITCHING | 15 ns | SILICON | N-Channel | 23m Ω @ 30A, 10V | 2.2V @ 10μA | 1560pF @ 25V | 21nC @ 10V | 1ns | 3 ns | 16V | 30A Tc | 120A | 18 mJ | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ058N03LSGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | 8-PowerTDFN | No SVHC | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-N5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.1W | 4.6 ns | 30V | 2.1W Ta 45W Tc | 15A | SWITCHING | 19 ns | SILICON | N-Channel | 5.8m Ω @ 20A, 10V | 2.2V @ 250μA | 2400pF @ 15V | 30nC @ 10V | 3.6ns | 3.2 ns | 20V | 40A | 15A Ta 40A Tc | 55 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRLL2703TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 1999 | HEXFET® | Not For New Designs | 1 (Unlimited) | 4 | EAR99 | 6.6802mm | ROHS3 Compliant | Contains Lead | 3.9A | No | 3 | HIGH RELIABILITY, AVALANCHE RATED | TO-261-4, TO-261AA | 1.4478mm | 3.7mm | 60mOhm | Surface Mount | -55°C~150°C TJ | 30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | R-PDSO-G4 | 1 | 1V | DRAIN | Single | 2.1W | 7.4 ns | 1W Ta | 3.9A | SWITCHING | 6.9 ns | SILICON | N-Channel | 45m Ω @ 3.9A, 10V | 2.4V @ 250μA | 530pF @ 25V | 14nC @ 5V | 24ns | 14 ns | 16V | 30V | 3.9A Ta | 16A | 180 mJ | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||
| IRFH8334TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2007 | HEXFET® | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | No | 8 | HIGH RELIABILITY | 8-PowerTDFN | No SVHC | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | FLAT | 260 | 30 | R-PDSO-F5 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.2W | 8.3 ns | 3.2W Ta 30W Tc | 14A | SWITCHING | 0.009Ohm | 7 ns | SILICON | N-Channel | 9m Ω @ 20A, 10V | 2.35V @ 25μA | 1180pF @ 10V | 15nC @ 10V | 14ns | 4.6 ns | 20V | 30V | 1.8 V | 14A Ta 44A Tc | 35 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRF5802TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2001 | HEXFET® | Active | 1 (Unlimited) | 6 | SMD/SMT | EAR99 | 2.9972mm | ROHS3 Compliant | Contains Lead | Tin | 900mA | No | 6 | SOT-23-6 Thin, TSOT-23-6 | No SVHC | 900μm | 1.4986mm | 1.2Ohm | Surface Mount | -55°C~150°C TJ | 150V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | FET General Purpose Power | 1 | Single | 2W | 6 ns | 5.5V | 2W Ta | 900mA | SWITCHING | 7.5 ns | SILICON | N-Channel | 1.2 Ω @ 540mA, 10V | 5.5V @ 250μA | 88pF @ 25V | 6.8nC @ 10V | 1.6ns | 9.2 ns | 30V | 150V | 150V | 5.5 V | 0.9A | 900mA Ta | 7A | 9.5 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| IPP50R140CPXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2008 | CoolMOS™ | yes | Not For New Designs | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | TO-220AB | ISOLATED | Halogen Free | Single | 192W | 35 ns | 500V | 192W Tc | 23A | SWITCHING | 0.14Ohm | SILICON | N-Channel | 140m Ω @ 14A, 10V | 3.5V @ 930μA | 2540pF @ 100V | 64nC @ 10V | 14ns | 8 ns | 3.5V | 500V | 23A Tc | 550V | 56A | 616 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPA60R099P6XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2008 | CoolMOS™ P6 | yes | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | Halogen Free | 20 ns | 600V | 34W Tc | 37.9A | 50 ns | N-Channel | 99m Ω @ 14.5A, 10V | 4.5V @ 1.21mA | 3330pF @ 100V | 70nC @ 10V | 10ns | 5 ns | 30V | 37.9A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP048N12N3GXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2008 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | Halogen Free | 300W | 31 ns | 120V | 300W Tc | 100A | SWITCHING | 0.0048Ohm | 64 ns | SILICON | N-Channel | 4.8m Ω @ 100A, 10V | 4V @ 230μA | 12000pF @ 60V | 182nC @ 10V | 55ns | 19 ns | 20V | 100A Tc | 400A | 740 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPP65R110CFDXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2008 | CoolMOS™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | TO-220-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | Halogen Free | 16 ns | 650V | 277.8W Tc | 31.2A | SWITCHING | 68 ns | SILICON | N-Channel | 110m Ω @ 12.7A, 10V | 4.5V @ 1.3mA | 3240pF @ 100V | 118nC @ 10V | 11ns | 6 ns | 20V | 31.2A Tc | 700V | 99.6A | 845 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP65R125C7XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2008 | CoolMOS™ C7 | Active | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | Lead Free | 3 | TO-220-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | Halogen Free | 14 ns | 650V | 110mOhm | PG-TO220-3 | 101W Tc | 18A | 71 ns | N-Channel | 125mOhm @ 8.9A, 10V | 4V @ 440μA | 1670pF @ 400V | 35nC @ 10V | 15ns | 8 ns | 20V | 18A Tc | 650V | 1.67nF | 10V | ±20V | 125 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPW32N50C3FKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Tube | 2005 | CoolMOS™ | yes | Not For New Designs | 1 (Unlimited) | 3 | ROHS3 Compliant | AVALANCHE RATED, HIGH VOLTAGE | TO-247-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AA | 284W Tc | 0.11Ohm | 500V | SILICON | N-Channel | 110m Ω @ 20A, 10V | 3.9V @ 1.8mA | 4200pF @ 25V | 170nC @ 10V | 32A | 32A Tc | 560V | 96A | 1100 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW60R060P7XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tube | 2014 | CoolMOS™ P7 | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-247-3 | 25.4mm | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 164W | 23 ns | 164W Tc | 48A | 150°C | SWITCHING | 0.06Ohm | 79 ns | SILICON | N-Channel | 60m Ω @ 15.9A, 10V | 4V @ 800μA | 2895pF @ 400V | 67nC @ 10V | 20V | 600V | 48A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW65R110CFDAFKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2008 | Automotive, AEC-Q101, CoolMOS™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 3 | HIGH RELIABILITY | TO-247-3 | Through Hole | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | 1 | SINGLE WITH BUILT-IN DIODE | 16 ns | 650V | 277.8W Tc | 31.2A | SWITCHING | 0.11Ohm | 68 ns | SILICON | N-Channel | 110m Ω @ 12.7A, 10V | 4.5V @ 1.3mA | 3240pF @ 100V | 118nC @ 10V | 11ns | 6 ns | 20V | 31.2A Tc | 99.6A | 845 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPP20N65C3XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2005 | CoolMOS™ | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 20.7A | 3 | AVALANCHE RATED | TO-220-3 | Through Hole | -55°C~150°C TJ | 650V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 3 | 1 | TO-220AB | Halogen Free | Single | 208W | 650V | 208W Tc | 20.7A | SWITCHING | 67 ns | SILICON | N-Channel | 190m Ω @ 13.1A, 10V | 3.9V @ 1mA | 2400pF @ 25V | 114nC @ 10V | 5ns | 4.5 ns | 20V | 650V | 20.7A Tc | 690 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP4127PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2013 | HEXFET® | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | TO-247-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 341W Tc | 75A | N-Channel | 21m Ω @ 44A, 10V | 5V @ 250μA | 5380pF @ 50V | 150nC @ 10V | 75A Tc | 200V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRLS8409-7P | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tube | 2016 | Automotive, AEC-Q101, HEXFET® | Not For New Designs | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-263-7, D2Pak (6 Leads + Tab) | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 375W Tc | 240A | N-Channel | 0.75m Ω @ 100A, 10V | 2.4V @ 250μA | 16488pF @ 25V | 266nC @ 4.5V | 240A Tc | 40V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP4137PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2008 | HEXFET® | Active | 1 (Unlimited) | EAR99 | 15.87mm | ROHS3 Compliant | Lead Free | No | 3 | TO-247-3 | No SVHC | 20.7mm | 5.31mm | 69MOhm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | FET General Purpose Power | 1 | Single | 341W | 18 ns | 3V | 341W Tc | 38A | 34 ns | N-Channel | 69m Ω @ 24A, 10V | 5V @ 250μA | 5168pF @ 50V | 125nC @ 10V | 23ns | 20 ns | 20V | 300V | 38A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW65R099C6FKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2008 | CoolMOS™ | yes | Not For New Designs | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | TO-247-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | 278W | 10.6 ns | 650V | 278W Tc | 38A | SWITCHING | 0.099Ohm | 77 ns | SILICON | N-Channel | 99m Ω @ 12.8A, 10V | 3.5V @ 1.2mA | 2780pF @ 100V | 127nC @ 10V | 9ns | 6 ns | 20V | 38A Tc | 845 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SN7002NH6433XTMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2003 | SIPMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 3 | LOGIC LEVEL COMPATIBLE | TO-236-3, SC-59, SOT-23-3 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | SINGLE WITH BUILT-IN DIODE | 2.4 ns | 360mW Ta | 200mA | 5Ohm | 60V | 5.3 ns | SILICON | N-Channel | 5 Ω @ 500mA, 10V | 1.8V @ 26μA | 45pF @ 25V | 1.5nC @ 10V | 3.2ns | 3.6 ns | 20V | 0.2A | 200mA Ta | 60V | 4.2 pF | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP50R199CPXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tube | 2008 | CoolMOS™ | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 3 | TO-220-3 | No SVHC | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | Not Qualified | 1 | TO-220AB | ISOLATED | Halogen Free | Single | 139W | 35 ns | 3V | 139W Tc | 17A | SWITCHING | 0.199Ohm | 80 ns | SILICON | N-Channel | 199m Ω @ 9.9A, 10V | 3.5V @ 660μA | 1800pF @ 100V | 45nC @ 10V | 14ns | 10 ns | 20V | 500V | 17A Tc | 550V | 40A | 10V | ±20V |