Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Reference Standard | Voltage | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Power Dissipation-Max | Continuous Drain Current (ID) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IPB80P04P4L04ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | Automotive, AEC-Q101, OptiMOS™ | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | 10mm | ROHS3 Compliant | Contains Lead | No | 3 | LOGIC LEVEL COMPATIBLE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.4mm | 9.25mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | GULL WING | R-PSSO-G2 | 1 | DRAIN | Halogen Free | Single | 125W | 28 ns | -40V | 125W Tc | -80A | 0.0071Ohm | 119 ns | SILICON | P-Channel | 4.4m Ω @ 80A, 10V | 2.2V @ 250μA | 3800pF @ 25V | 176nC @ 10V | 13ns | 65 ns | 16V | -40V | 80A Tc | 40V | 60 mJ | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||
IRF3007STRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | R-PSSO-G2 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 120W Tc | 62A | SWITCHING | 0.0126Ohm | 75V | SILICON | N-Channel | 12.6m Ω @ 48A, 10V | 4V @ 250μA | 3270pF @ 25V | 130nC @ 10V | 62A Tc | 75V | 320A | 946 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
AUIRFZ24NSTRL | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Tape & Reel (TR) | 2015 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | AVALANCHE RATED | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | DUAL | GULL WING | 260 | 30 | YES | R-PDSO-G2 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | TO-263AB | DRAIN | 3.8W Ta 45W Tc | SWITCHING | 0.07Ohm | 55V | SILICON | N-Channel | 70m Ω @ 10A, 10V | 4V @ 250μA | 370pF @ 25V | 20nC @ 10V | 17A | 17A Tc | 55V | 68A | 71 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
IPB049N08N5ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | yes | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | Contains Lead | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | 3.949996g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | 1 | DRAIN | Halogen Free | Single | 17 ns | 80V | 125W Tc | 80A | SWITCHING | 0.0049Ohm | 27 ns | SILICON | N-Channel | 4.9m Ω @ 80A, 10V | 3.8V @ 66μA | 3770pF @ 40V | 53nC @ 10V | 7ns | 7 ns | 20V | 80A Tc | 320A | 84 mJ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||
IPB80N06S209ATMA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Tape & Reel (TR) | 2006 | OptiMOS™ | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 190W Tc | 0.0088Ohm | 55V | SILICON | N-Channel | 8.8m Ω @ 50A, 10V | 4V @ 125μA | 2360pF @ 25V | 80nC @ 10V | 80A | 80A Tc | 55V | 320A | 370 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
AUIRL7736M2TR | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | HEXFET® | Active | 1 (Unlimited) | 5 | ROHS3 Compliant | No | 9 | HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE | DirectFET™ Isometric M4 | No SVHC | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | BOTTOM | R-XBCC-N5 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 63W | 48 ns | 1.8V | 2.5W Ta 63W Tc | 179A | SWITCHING | 0.003Ohm | 56 ns | SILICON | N-Channel | 3m Ω @ 67A, 10V | 2.5V @ 150μA | 5055pF @ 25V | 78nC @ 4.5V | 210ns | 76 ns | 16V | 40V | 22A | 179A Tc | 450A | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||
IRLR3410PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 1998 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | AVALANCHE RATED, ULTRA LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 79W Tc | SWITCHING | 0.125Ohm | 100V | SILICON | N-Channel | 105m Ω @ 10A, 10V | 2V @ 250μA | 800pF @ 25V | 34nC @ 5V | 17A | 17A Tc | 100V | 60A | 150 mJ | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||
AUIRF4104 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Through Hole | Tube | 2010 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 10.6426mm | ROHS3 Compliant | No | 3 | TO-220-3 | No SVHC | 9.017mm | 4.82mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-220AB | Single | 140W | 16 ns | 2V | 140W Tc | 75A | SWITCHING | 0.0055Ohm | 38 ns | SILICON | N-Channel | 5.5m Ω @ 75A, 10V | 4V @ 250μA | 3000pF @ 25V | 100nC @ 10V | 130ns | 77 ns | 20V | 40V | 75A Tc | 470A | 220 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||
IPB120N10S405ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | Automotive, AEC-Q101, OptiMOS™ | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 15 ns | 100V | 190W Tc | 120A | 0.005Ohm | 30 ns | SILICON | N-Channel | 5m Ω @ 100A, 10V | 3.5V @ 120μA | 6540pF @ 25V | 91nC @ 10V | 10ns | 35 ns | 20V | 120A Tc | 480A | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
IRLR8729TRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 52 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | 6.7056mm | ROHS3 Compliant | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.26mm | 6.22mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | Not Qualified | 1 | TO-252AA | DRAIN | Single | 55W | 10 ns | 55W Tc | 58A | SWITCHING | 0.0089Ohm | 11 ns | SILICON | N-Channel | 8.9m Ω @ 25A, 10V | 2.35V @ 25μA | 1350pF @ 15V | 16nC @ 4.5V | 47ns | 10 ns | 20V | 30V | 50A | 58A Tc | 260A | 74 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
AUIRF540Z | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Through Hole | Tube | 2000 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 10.66mm | ROHS3 Compliant | No | 3 | AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY | TO-220-3 | No SVHC | 16.51mm | 4.82mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-220AB | Single | 92W | 15 ns | 2V | 92W Tc | 36A | SWITCHING | 0.0265Ohm | 43 ns | SILICON | N-Channel | 26.5m Ω @ 22A, 10V | 4V @ 250μA | 1770pF @ 25V | 63nC @ 10V | 51ns | 39 ns | 20V | 100V | 2 V | 36A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||
AUIRFU8405 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount, Through Hole | Tube | 2013 | HEXFET® | Active | 1 (Unlimited) | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | No | 3 | TO-251-3 Short Leads, IPak, TO-251AA | No SVHC | 6.22mm | 2.39mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | 1 | FET General Purpose Power | Single | 163W | 12 ns | 3V | 163W Tc | 100A | 51 ns | N-Channel | 1.98m Ω @ 90A, 10V | 3.9V @ 100μA | 5171pF @ 25V | 155nC @ 10V | 80ns | 51 ns | 20V | 40V | 3 V | 100A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
IRFS4510TRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 140W | 13 ns | 2V | 140W Tc | 61A | SWITCHING | 28 ns | SILICON | N-Channel | 13.9m Ω @ 37A, 10V | 4V @ 100μA | 3180pF @ 50V | 87nC @ 10V | 32ns | 20V | 100V | 61A Tc | 250A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
IPB90N06S4L04ATMA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | Automotive, AEC-Q101, OptiMOS™ | yes | Active | 1 (Unlimited) | 2 | EAR99 | 10mm | ROHS3 Compliant | Lead Free | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | 4.4mm | 9.25mm | Surface Mount | 1.946308g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | 1 | DRAIN | Single | 21 ns | 60V | 150W Tc | 90A | 140 ns | SILICON | N-Channel | 3.7m Ω @ 90A, 10V | 2.2V @ 90μA | 13000pF @ 25V | 170nC @ 10V | 6ns | 20 ns | 16V | 90A Tc | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||
IPA040N06NXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2012 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 Full Pack | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | Halogen Free | 14 ns | 60V | 36W Tc | 69A | SWITCHING | 0.004Ohm | 33 ns | SILICON | N-Channel | 4m Ω @ 69A, 10V | 3.3V @ 50μA | 3375pF @ 30V | 44nC @ 10V | 16ns | 8 ns | 20V | 69A Tc | 276A | 77 mJ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||
AUIRFZ44VZSTRL | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | 3 | ULTRA LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | AEC-Q101 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 92W | 14 ns | 92W Tc | 57A | SWITCHING | 0.012Ohm | 35 ns | SILICON | N-Channel | 12m Ω @ 34A, 10V | 4V @ 250μA | 1690pF @ 25V | 65nC @ 10V | 62ns | 38 ns | 20V | 60V | 57A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
IPP80N06S208AKSA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Through Hole | Tube | 2006 | OptiMOS™ | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Tin | 3 | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 80A | NOT SPECIFIED | NOT SPECIFIED | 55V | 1 | TO-220AB | Halogen Free | Single | 215W | 14 ns | 55V | 215W Tc | 80A | 0.008Ohm | 32 ns | SILICON | N-Channel | 8m Ω @ 58A, 10V | 4V @ 150μA | 2860pF @ 25V | 96nC @ 10V | 15ns | 14 ns | 20V | 55V | 80A Tc | 450 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
IPB80N06S2L07ATMA3 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | OptiMOS™ | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | LOGIC LEVEL COMPATIBLE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 55V | 210W Tc | 80A | 0.0097Ohm | SILICON | N-Channel | 6.7m Ω @ 60A, 10V | 2V @ 150μA | 3160pF @ 25V | 130nC @ 10V | 80A Tc | 320A | 450 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
IPP60R385CPXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Tube | 2007 | CoolMOS™ | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-220-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | 83W Tc | SWITCHING | 0.385Ohm | 600V | SILICON | N-Channel | 385m Ω @ 5.2A, 10V | 3.5V @ 340μA | 790pF @ 100V | 22nC @ 10V | 9A | 9A Tc | 650V | 27A | 227 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
IPA65R310CFDXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2008 | CoolMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | Halogen Free | 32W | 11 ns | 650V | 32W Tc | 11.4A | SWITCHING | 45 ns | SILICON | N-Channel | 310m Ω @ 4.4A, 10V | 4.5V @ 440μA | 1100pF @ 100V | 41nC @ 10V | 7.5ns | 7 ns | 20V | 11.4A Tc | 290 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||
IPI80N08S406AKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Through Hole | Tube | 2013 | Automotive, AEC-Q101, OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Contains Lead | TO-262-3 Long Leads, I2Pak, TO-262AA | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | R-PSIP-T3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 80V | 150W Tc | 80A | 0.0058Ohm | SILICON | N-Channel | 5.8m Ω @ 80A, 10V | 4V @ 90μA | 4800pF @ 25V | 70nC @ 10V | 80A Tc | 320A | 270 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
IRF6893MTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | HEXFET® | Last Time Buy | 1 (Unlimited) | EAR99 | ROHS3 Compliant | No | 7 | DirectFET™ Isometric MX | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | FET General Purpose Power | 1 | Single | 2.1W | 18 ns | 2.1W Ta 69W Tc | 29A | 19 ns | N-Channel | 1.6m Ω @ 29A, 10V | 2.1V @ 100μA | 3480pF @ 13V | 38nC @ 4.5V | 83ns | 33 ns | 16V | 25V | 29A Ta 168A Tc | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||
IRFSL3206PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2008 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | 210A | No | 3 | TO-262-3 Long Leads, I2Pak, TO-262AA | 9.65mm | 4.826mm | Through Hole | -55°C~175°C TJ | 60V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | 260 | 30 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 300W | 19 ns | 300W Tc | 120A | SWITCHING | 55 ns | SILICON | N-Channel | 3m Ω @ 75A, 10V | 4V @ 150μA | 6540pF @ 50V | 170nC @ 10V | 82ns | 83 ns | 20V | 60V | 120A Tc | 840A | 10V | ±20V | |||||||||||||||||||||||||||||||
IPL60R299CPAUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2010 | CoolMOS™ | no | Not For New Designs | 2A (4 Weeks) | 4 | ROHS3 Compliant | Contains Lead | 4 | 4-PowerTSFN | No SVHC | not_compliant | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 4 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 10 ns | 3V | 600V | 96W Tc | 11.1A | SWITCHING | 0.299Ohm | 40 ns | SILICON | N-Channel | 299m Ω @ 6.6A, 10V | 3.5V @ 440μA | 1100pF @ 100V | 22nC @ 10V | 5ns | 20V | 11.1A Tc | 650V | 290 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||
IPB65R310CFDAATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | Automotive, AEC-Q101, CoolMOS™ | no | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | Contains Lead | 3 | HIGH RELIABILITY | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 11 ns | 650V | 104.2W Tc | 11.4A | SWITCHING | 45 ns | SILICON | N-Channel | 310m Ω @ 4.4A, 10V | 4.5V @ 440μA | 1110pF @ 100V | 41nC @ 10V | 7.5ns | 7 ns | 20V | 11.4A Tc | 290 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||
IRF1404STRRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2001 | HEXFET® | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | 162A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.826mm | 9.65mm | 4mOhm | Surface Mount | -55°C~175°C TJ | 40V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | DRAIN | Single | 3.8W | 17 ns | 3.8W Ta 200W Tc | 162A | SWITCHING | 72 ns | SILICON | N-Channel | 4m Ω @ 95A, 10V | 4V @ 250μA | 7360pF @ 25V | 200nC @ 10V | 140ns | 26 ns | 20V | 40V | 75A | 162A Tc | 650A | 10V | ±20V | ||||||||||||||||||||||||||||
IRF40H210 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | 2013 | HEXFET®, StrongIRFET™ | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | 8 | 8-PowerVDFN | 1.7mOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 125W Tc | 100A | N-Channel | 1.7m Ω @ 100A, 10V | 3.7V @ 150μA | 5406pF @ 25V | 152nC @ 10V | 100A Tc | 40V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPA50R650CEXKSA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 6 Weeks | Through Hole | Tube | 2008 | CoolMOS™ CE | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | 3 | TO-220-3 Full Pack | Through Hole | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | Halogen Free | 6 ns | 500V | 27.2W Tc | 4.6A | SWITCHING | 0.65Ohm | 27 ns | SILICON | N-Channel | 650m Ω @ 1.8A, 13V | 3.5V @ 150μA | 342pF @ 100V | 15nC @ 10V | 5ns | 13 ns | 20V | 6.1A | 4.6A Tc | 19A | 102 mJ | 13V | ±20V | |||||||||||||||||||||||||||||||||
IPD60R650CEATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2014 | CoolMOS™ CE | Obsolete | 1 (Unlimited) | 2 | EAR99 | RoHS Compliant | Lead Free | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | 3.949996g | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | 1 | DRAIN | Single | 10 ns | 63W Tc | 7A | SWITCHING | 0.65Ohm | 600V | 58 ns | SILICON | N-Channel | 650m Ω @ 2.4A, 10V | 3.5V @ 200μA | 440pF @ 100V | 20.5nC @ 10V | 8ns | 11 ns | 20V | 7A Tc | 600V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
IRF3707ZSTRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 15 Weeks | Surface Mount | Tape & Reel (TR) | 2003 | HEXFET®, StrongIRFET™ | Obsolete | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 9.5mOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | R-PSSO-G2 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 57W Tc | 59A | SWITCHING | 30V | SILICON | N-Channel | 9.5m Ω @ 21A, 10V | 2.25V @ 25μA | 1210pF @ 15V | 15nC @ 4.5V | 42A | 59A Tc | 30V | 230A | 40 mJ | 4.5V 10V | ±20V |
Products