Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Lead Length | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Feedback Cap-Max (Crss) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
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IRFD120PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2011 | yes | Active | 1 (Unlimited) | 4 | EAR99 | 5mm | ROHS3 Compliant | Lead Free | 1.3A | No | 4 | AVALANCHE RATED | 4-DIP (0.300, 7.62mm) | Unknown | 3.37mm | 6.29mm | 270mOhm | Through Hole | -55°C~175°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | 4 | FET General Purpose Powers | 1 | DRAIN | Single | 1.3W | 6.8 ns | 4V | 1.3W Ta | 260 ns | 1.3A | SWITCHING | 18 ns | SILICON | N-Channel | 270m Ω @ 780mA, 10V | 4V @ 250μA | 360pF @ 25V | 16nC @ 10V | 27ns | 27 ns | 20V | 100V | 1.3A Ta | 10V | ±20V | |||||||||||||||||||||||||||||||||||
IRFU120PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2013 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | No | 3 | AVALANCHE RATED | TO-251-3 Short Leads, IPak, TO-251AA | Unknown | 6.22mm | 2.39mm | 270mOhm | Through Hole | 329.988449mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 260 | 40 | 3 | 1 | 1 | DRAIN | Single | 2.5W | 6.8 ns | 4V | 2.5W Ta 42W Tc | 7.7A | SWITCHING | 18 ns | SILICON | N-Channel | 270m Ω @ 4.6A, 10V | 4V @ 250μA | 360pF @ 25V | 16nC @ 10V | 27ns | 17 ns | 20V | 100V | 4 V | 7.7A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||
SUD25N15-52-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | TrenchFET® | yes | Active | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.507mm | 6.22mm | 52mOhm | Surface Mount | 1.437803g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | GULL WING | 4 | R-PSSO-G2 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 3W | 15 ns | 4V | 3W Ta 136W Tc | 25A | 175°C | SWITCHING | 25 ns | SILICON | N-Channel | 52m Ω @ 5A, 10V | 4V @ 250μA | 1725pF @ 25V | 40nC @ 10V | 70ns | 60 ns | 20V | 150V | 4 V | 25A Tc | 50A | 6V 10V | ±20V | ||||||||||||||||||||||||||||||
IRFD9010PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2010 | Active | 1 (Unlimited) | 150°C | -55°C | 6.2738mm | ROHS3 Compliant | Lead Free | -1.1A | No | 4 | 4-DIP (0.300, 7.62mm) | Unknown | 3.3782mm | 5.0038mm | Through Hole | -55°C~150°C TJ | -50V | MOSFET (Metal Oxide) | Single | 1W | 6.1 ns | -4V | 350mOhm | 4-DIP, Hexdip, HVMDIP | 1W Tc | -1.1A | 13 ns | P-Channel | 500mOhm @ 580mA, 10V | 4V @ 250μA | 240pF @ 25V | 11nC @ 10V | 47ns | 39 ns | 20V | 50V | 1.1A Tc | 50V | 240pF | 10V | ±20V | 500 mΩ | ||||||||||||||||||||||||||||||||||||||||||
IRFU9024PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2016 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | No | 3 | AVALANCHE RATED | TO-251-3 Short Leads, IPak, TO-251AA | Unknown | 6.22mm | 2.39mm | 280mOhm | Through Hole | 329.988449mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 9.65mm | e3 | Matte Tin (Sn) - annealed | 260 | 40 | 3 | 1 | Other Transistors | 1 | DRAIN | Single | 2.5W | 13 ns | -4V | 2.5W Ta 42W Tc | 8.8A | SWITCHING | 15 ns | SILICON | P-Channel | 280m Ω @ 5.3A, 10V | 4V @ 250μA | 570pF @ 25V | 19nC @ 10V | 68ns | 29 ns | 20V | -60V | 8.8A Tc | 60V | 10V | ±20V | |||||||||||||||||||||||||||||||
IRFU9014PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2008 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | No | 3 | AVALANCHE RATED | TO-251-3 Short Leads, IPak, TO-251AA | Unknown | 6.22mm | 2.39mm | 500mOhm | Through Hole | 329.988449mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 9.65mm | e3 | Matte Tin (Sn) | 260 | 40 | 3 | 1 | Other Transistors | 1 | DRAIN | Single | 2.5W | 11 ns | -4V | 2.5W Ta 25W Tc | 5.1A | SWITCHING | 9.6 ns | SILICON | P-Channel | 500m Ω @ 3.1A, 10V | 4V @ 250μA | 270pF @ 25V | 12nC @ 10V | 63ns | 31 ns | 20V | -60V | -4 V | 5.1A Tc | 60V | 20A | 10V | ±20V | |||||||||||||||||||||||||||||
SI7370DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Lead Free | Tin | No | 8 | PowerPAK® SO-8 | No SVHC | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | C BEND | 260 | 30 | 8 | R-XDSO-C5 | 1 | FET General Purpose Powers | 1 | DRAIN | Single | 16 ns | 4V | 1.9W Ta | 9.6A | SWITCHING | 50 ns | SILICON | N-Channel | 11m Ω @ 12A, 10V | 4V @ 250μA | 57nC @ 10V | 12ns | 30 ns | 20V | 60V | 9.6A Ta | 50A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
SI1330EDL-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2017 | TrenchFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 2mm | ROHS3 Compliant | Lead Free | No | 3 | SC-70, SOT-323 | Unknown | 1mm | 1.25mm | 2.5Ohm | Surface Mount | 124.596154mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | DUAL | GULL WING | 260 | 40 | 3 | 1 | FET General Purpose Powers | 1 | Single | 280mW | 3.8 ns | 2V | 280mW Ta | 250mA | SWITCHING | 12.8 ns | SILICON | N-Channel | 2.5 Ω @ 250mA, 10V | 2.5V @ 250μA | 0.6nC @ 4.5V | 4.8ns | 4.8 ns | 20V | 60V | 0.24A | 240mA Ta | 3V 10V | ±20V | ||||||||||||||||||||||||||||||||
SI1427EDH-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Digi-Reel® | 2012 | TrenchFET® | Active | 1 (Unlimited) | 6 | EAR99 | 2.2mm | ROHS3 Compliant | Lead Free | No | 6 | 6-TSSOP, SC-88, SOT-363 | No SVHC | 1mm | 1.35mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | 6 | 1 | Other Transistors | 1 | SINGLE WITH BUILT-IN DIODE AND RESISTOR | 1.56W | 90 ns | -400mV | 1.56W Ta 2.8W Tc | 2A | SWITCHING | 5.2 μs | SILICON | P-Channel | 64m Ω @ 3A, 4.5V | 1V @ 250μA | 21nC @ 8V | 400ns | 2.3 μs | 8V | -20V | 2A | 2A Tc | 20V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||
SIRA52DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | TrenchFET® | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | PowerPAK® SO-8 | unknown | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 48W Tc | 60A | N-Channel | 1.7m Ω @ 15A, 10V | 2.4V @ 250μA | 7150pF @ 20V | 150nC @ 10V | 60A Tc | 40V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SQ4153EY-T1_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | Automotive, AEC-Q101, TrenchFET® | Active | 1 (Unlimited) | 8 | EAR99 | Non-RoHS Compliant | 8-SOIC (0.154, 3.90mm Width) | unknown | 1.75mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PDSO-G8 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | 7.1W | 31 ns | 7.1W Tc | -25A | 175°C | 0.00832Ohm | 310 ns | SILICON | P-Channel | 8.32m Ω @ 14A, 4.5V | 900mV @ 250μA | 11000pF @ 6V | 151nC @ 4.5V | 8V | -12V | 25A Tc | 12V | 3600 pF | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||
IRFRC20TRRPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | yes | Active | 1 (Unlimited) | 2 | 6.73mm | ROHS3 Compliant | No | 3 | AVALANCHE RATED | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.39mm | 6.22mm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | GULL WING | 260 | 40 | 3 | R-PSSO-G2 | 1 | 1 | DRAIN | Single | 2.5W | 10 ns | 2.5W Ta 42W Tc | 2A | SWITCHING | 600V | 30 ns | SILICON | N-Channel | 4.4 Ω @ 1.2A, 10V | 4V @ 250μA | 350pF @ 25V | 18nC @ 10V | 23ns | 25 ns | 20V | 2A | 2A Tc | 600V | 8A | 74 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||
SI4425BDY-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | TrenchFET® | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Unknown | 1.55mm | 4mm | Surface Mount | 186.993455mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 30 | 8 | 1 | Other Transistors | 1 | Single | 1.5W | 15 ns | -400mV | 1.5W Ta | -11.4A | SWITCHING | 30V | 100 ns | SILICON | P-Channel | 12m Ω @ 11.4A, 10V | 3V @ 250μA | 100nC @ 10V | 13ns | 13 ns | 20V | 8.8A Ta | 30V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
SIHD3N50D-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 11 Weeks | Surface Mount | Tube | 2006 | Active | 1 (Unlimited) | 2 | 6.73mm | ROHS3 Compliant | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Unknown | 2.38mm | 6.22mm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | R-PSSO-G2 | 1 | FET General Purpose Powers | 1 | TO-252AA | DRAIN | Single | 104W | 12 ns | 3V | 69W Tc | 3A | SWITCHING | 11 ns | SILICON | N-Channel | 3.2 Ω @ 2.5A, 10V | 5V @ 250μA | 175pF @ 100V | 12nC @ 10V | 9ns | 13 ns | 30V | 500V | 3A | 3A Tc | 5.5A | 9 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
SUD80460E-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tube | ThunderFET® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.507mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G2 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 65.2W | 8 ns | 65.2W Tc | 42A | 175°C | SWITCHING | 0.0447Ohm | 15 ns | SILICON | N-Channel | 44.7m Ω @ 8.3A, 10V | 4V @ 250μA | 560pF @ 50V | 16nC @ 10V | 20V | 150V | 42A Tc | 40A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
SIR870DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Lead Free | No | 8 | PowerPAK® SO-8 | Unknown | 6mOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | C BEND | 260 | 40 | 8 | R-PDSO-C5 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 6.25W | 1.2V | 6.25W Ta 104W Tc | 60A | SWITCHING | SILICON | N-Channel | 6m Ω @ 20A, 10V | 3V @ 250μA | 2840pF @ 50V | 84nC @ 10V | 8 ns | 20V | 60A Tc | 100V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
IRLD120PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2004 | Active | 1 (Unlimited) | 175°C | -55°C | 6.2738mm | ROHS3 Compliant | Lead Free | 1.3A | No | 4 | 4-DIP (0.300, 7.62mm) | Unknown | 3.3782mm | 5.0038mm | 270mOhm | Through Hole | -55°C~175°C TJ | 100V | MOSFET (Metal Oxide) | 1 | Single | 1.3W | 9.8 ns | 2V | 270mOhm | 4-DIP, Hexdip, HVMDIP | 1.3W Ta | 1.3A | 21 ns | N-Channel | 270mOhm @ 780mA, 5V | 2V @ 250μA | 490pF @ 25V | 12nC @ 5V | 64ns | 64 ns | 10V | 100V | 1.3A Ta | 100V | 490pF | 4V 5V | ±10V | 270 mΩ | ||||||||||||||||||||||||||||||||||||||||
SIHFR1N60A-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tube | 2016 | Active | 1 (Unlimited) | EAR99 | Non-RoHS Compliant | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | unknown | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | FET General Purpose Power | 1 | Single | 36W | 36W Tc | 1.4A | N-Channel | 7 Ω @ 840mA, 10V | 4V @ 250μA | 229pF @ 25V | 14nC @ 10V | 30V | 1.4A Tc | 600V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SQD50N04-4M5L_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2017 | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Unknown | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | 260 | 40 | 4 | R-PSSO-G2 | FET General Purpose Powers | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 136W | 9 ns | 1.5V | 136W Tc | 50A | 0.006Ohm | 40V | 39 ns | SILICON | N-Channel | 3.5m Ω @ 20A, 10V | 2.5V @ 250μA | 5860pF @ 25V | 130nC @ 10V | 11ns | 11 ns | 20V | 50A Tc | 40V | 200A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
SIHD5N50D-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Cut Tape (CT) | 2015 | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | R-PSSO-G2 | FET General Purpose Powers | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 12 ns | 104W Tc | 5.3A | SWITCHING | 500V | 14 ns | SILICON | N-Channel | 1.5 Ω @ 2.5A, 10V | 5V @ 250μA | 325pF @ 100V | 20nC @ 10V | 11ns | 11 ns | 30V | 5.3A Tc | 500V | 10A | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
IRFU220PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2016 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | 4.8A | 3 | AVALANCHE RATED | TO-251-3 Short Leads, IPak, TO-251AA | Unknown | 6.22mm | 2.38mm | 800mOhm | Through Hole | 329.988449mg | -55°C~150°C TJ | 200V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | 260 | 30 | 3 | 1 | FET General Purpose Powers | Not Qualified | 1 | DRAIN | Single | 2.5W | 7.2 ns | 4V | 2.5W Ta 42W Tc | 4.8A | SWITCHING | 19 ns | SILICON | N-Channel | 800m Ω @ 2.9A, 10V | 4V @ 250μA | 260pF @ 25V | 14nC @ 10V | 22ns | 13 ns | 20V | 200V | 4.8A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||
IRLU024PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | yes | Active | 1 (Unlimited) | 3 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | 3 | LOGIC LEVEL COMPATIBLE | TO-251-3 Short Leads, IPak, TO-251AA | unknown | 6.22mm | 2.39mm | Through Hole | 329.988449mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 260 | 40 | 3 | 1 | Not Qualified | 1 | DRAIN | Single | 2.5W | 11 ns | 2.5W Ta 42W Tc | 14A | SWITCHING | 23 ns | SILICON | N-Channel | 100m Ω @ 8.4A, 5V | 2V @ 250μA | 870pF @ 25V | 18nC @ 5V | 110ns | 41 ns | 10V | 60V | 14A Tc | 56A | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||
IRFU430APBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 11 Weeks | Through Hole | Tube | 2008 | Active | 1 (Unlimited) | 3 | 6.73mm | ROHS3 Compliant | Lead Free | 5A | No | 3 | TO-251-3 Short Leads, IPak, TO-251AA | Unknown | 6.22mm | 2.39mm | 1.7Ohm | Through Hole | 329.988449mg | -55°C~150°C TJ | 500V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | 260 | 40 | 3 | 1 | 1 | DRAIN | Single | 110W | 8.7 ns | 4.5V | 110W Tc | 5A | SWITCHING | 17 ns | SILICON | N-Channel | 1.7 Ω @ 3A, 10V | 4.5V @ 250μA | 490pF @ 25V | 24nC @ 10V | 27ns | 16 ns | 30V | 500V | 5A | 5A Tc | 20A | 10V | ±30V | |||||||||||||||||||||||||||||||||
IRFD113PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2017 | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | No | 4 | 4-DIP (0.300, 7.62mm) | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | 2 | R-PDIP-T2 | 1 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 10 ns | 1W Tc | 800mA | SWITCHING | 0.8Ohm | 60V | 15 ns | SILICON | N-Channel | 800m Ω @ 800mA, 10V | 4V @ 250μA | 200pF @ 25V | 7nC @ 10V | 15ns | 10 ns | 20V | 0.8A | 800mA Tc | 60V | 25 pF | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
SIHH11N65EF-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 21 Weeks | Surface Mount | Tape & Reel (TR) | 2017 | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | 8 | 8-PowerTDFN | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 130W Tc | 11A | N-Channel | 382m Ω @ 6A, 10V | 4V @ 250μA | 1243pF @ 100V | 70nC @ 10V | 11A Tc | 650V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIHP25N40D-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Cut Tape (CT) | 2011 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | No | 3 | AVALANCHE RATED | TO-220-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | 3 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | 21 ns | 278W Tc | 25A | SWITCHING | 0.17Ohm | 400V | 40 ns | SILICON | N-Channel | 170m Ω @ 13A, 10V | 5V @ 250μA | 1707pF @ 100V | 88nC @ 10V | 57ns | 37 ns | 30V | 25A Tc | 400V | 78A | 556 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
SIHP23N60E-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Through Hole | Cut Tape (CT) | 2014 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | No | 3 | TO-220-3 | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 1 | 1 | TO-220AB | Single | 22 ns | 227W Tc | 23A | SWITCHING | 66 ns | SILICON | N-Channel | 158m Ω @ 12A, 10V | 4V @ 250μA | 2418pF @ 100V | 95nC @ 10V | 38ns | 34 ns | 20V | 650V | 23A Tc | 600V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
SIHB23N60E-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tube | 2014 | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | Lead Free | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Unknown | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | R-PSSO-G2 | 1 | 1 | Single | 22 ns | 227W Tc | 23A | SWITCHING | 600V | 66 ns | SILICON | N-Channel | 158m Ω @ 12A, 10V | 4V @ 250μA | 2418pF @ 100V | 95nC @ 10V | 38ns | 34 ns | 20V | 23A Tc | 600V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
SI4423DY-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | TrenchFET® | Active | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | No | 8 | 8-SOIC (0.154, 3.90mm Width) | 1.55mm | 4mm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | DUAL | GULL WING | 260 | 40 | 8 | 1 | 1 | Single | 1.5W | 75 ns | 1.5W Ta | -10A | SWITCHING | 0.0075Ohm | 460 ns | SILICON | P-Channel | 7.5m Ω @ 14A, 4.5V | 900mV @ 600μA | 175nC @ 5V | 165ns | 165 ns | 8V | -20V | 10A Ta | 20V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||
SI7390DP-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 4.9mm | ROHS3 Compliant | Lead Free | No | 8 | PowerPAK® SO-8 | 1.04mm | 5.89mm | 9.5mOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 40 | 8 | R-XDSO-C5 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 1.8W | 16 ns | 1.8W Ta | 9A | SWITCHING | 30V | 43 ns | SILICON | N-Channel | 9.5m Ω @ 15A, 10V | 3V @ 250μA | 15nC @ 4.5V | 7ns | 7 ns | 20V | 9A | 9A Ta | 30V | 50A | 4.5V 10V | ±20V |
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