All Products
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Integrated Circuits (ICs)
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Connectors
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Discrete Semiconductors
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Capacitors
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Sensors
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RF/IF & RFID
- RF/IF & RFID
- Attenuators
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- Inductors
- Filters
Vishay Siliconix(2369)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Package / Case | REACH SVHC | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Manufacturer Package Identifier | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Max Power Dissipation | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | FET Feature | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SIHG33N65EF-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 21 Weeks | Through Hole | Tube | 2016 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | 3 | TO-247-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AC | 4V | 313W Tc | 31.6A | SWITCHING | 0.109Ohm | 650V | SILICON | N-Channel | 109m Ω @ 16.5A, 10V | 4V @ 250μA | 4026pF @ 100V | 171nC @ 10V | 31.6A Tc | 650V | 508 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRFPG40PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2014 | Active | 1 (Unlimited) | 150°C | -55°C | 15.87mm | ROHS3 Compliant | Lead Free | 4.3A | No | 3 | TO-247-3 | Unknown | 20.7mm | 5.31mm | Through Hole | 38.000013g | -55°C~150°C TJ | 1kV | MOSFET (Metal Oxide) | 1 | 1 | Single | 150W | 15 ns | 4V | 3.5Ohm | TO-247-3 | 150W Tc | 710 ns | 4.3A | 100 ns | N-Channel | 3.5Ohm @ 2.6A, 10V | 4V @ 250μA | 1600pF @ 25V | 120nC @ 10V | 33ns | 30 ns | 20V | 1kV | 4 V | 4.3A Tc | 1000V | 1.6nF | 10V | ±20V | 3.5 Ω | |||||||||||||||||||||||||||||||||||
| SIHP33N60E-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Through Hole | Bulk | 2011 | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 | Unknown | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 1 | FET General Purpose Powers | 1 | TO-220AB | Single | 278W | 56 ns | 2V | 278W Tc | 33A | SWITCHING | 0.099Ohm | 150 ns | SILICON | N-Channel | 99m Ω @ 16.5A, 10V | 4V @ 250μA | 3508pF @ 100V | 150nC @ 10V | 90ns | 80 ns | 20V | 600V | 33A Tc | 88A | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| IRFS11N50APBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tube | 2014 | Active | 1 (Unlimited) | 150°C | -55°C | 10.67mm | ROHS3 Compliant | Lead Free | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Unknown | 4.83mm | 9.65mm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 1 | Single | 170W | 14 ns | 4V | 520mOhm | D2PAK | 170W Tc | 11A | 32 ns | N-Channel | 520mOhm @ 6.6A, 10V | 4V @ 250μA | 1423pF @ 25V | 52nC @ 10V | 35ns | 28 ns | 30V | 11A Tc | 500V | 1.423nF | 10V | ±30V | 520 mΩ | |||||||||||||||||||||||||||||||||||||||||
| IRFPG30PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2016 | Active | 1 (Unlimited) | 150°C | -55°C | 15.87mm | ROHS3 Compliant | Lead Free | 3 | TO-247-3 | Unknown | 20.7mm | 5.31mm | 5Ohm | Through Hole | 38.000013g | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 1 | Single | 125W | 12 ns | 4V | 5Ohm | TO-247-3 | 125W Tc | 3.1A | 89 ns | N-Channel | 5Ohm @ 1.9A, 10V | 4V @ 250μA | 980pF @ 25V | 80nC @ 10V | 24ns | 29 ns | 20V | 4 V | 3.1A Tc | 1000V | 980pF | 10V | ±20V | 5 Ω | |||||||||||||||||||||||||||||||||||||||
| SIHJ10N60E-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tube | E | Active | 1 (Unlimited) | ROHS3 Compliant | 8-PowerTDFN | 1.267mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 89W | 16 ns | 89W Tc | 10A | 150°C | 31 ns | N-Channel | 360m Ω @ 5A, 10V | 4.5V @ 250μA | 784pF @ 100V | 50nC @ 10V | 30V | 600V | 10A Tc | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP80090E-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tube | 2016 | ThunderFET® | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 3 | TO-220-3 | Unknown | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | 5V | 375W Tc | 128A | SWITCHING | 0.011Ohm | 150V | SILICON | N-Channel | 9.4m Ω @ 30A, 10V | 5V @ 250μA | 3425pF @ 75V | 95nC @ 10V | 128A Tc | 150V | 240A | 180 mJ | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SI1467DH-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | TrenchFET® | yes | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | Lead Free | Tin | No | 6 | 6-TSSOP, SC-88, SOT-363 | Surface Mount | 7.512624mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 30 | 6 | 1 | Other Transistors | 1 | Single | 16 ns | 1.5W Ta 2.78W Tc | 2.7A | 0.09Ohm | 20V | 36 ns | SILICON | P-Channel | 90m Ω @ 2A, 4.5V | 1V @ 250μA | 561pF @ 10V | 13.5nC @ 4.5V | 43ns | 43 ns | 8V | 3A | 2.7A Tc | 20V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||
| SI4435DDY-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2017 | TrenchFET® | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.5mm | 4mm | 24mOhm | Surface Mount | 186.993455mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 30 | 8 | 1 | 1 | Single | 2.5W | 42 ns | -3V | 2.5W Ta 5W Tc | -11.4A | SWITCHING | 40 ns | SILICON | P-Channel | 24m Ω @ 9.1A, 10V | 3V @ 250μA | 1350pF @ 15V | 50nC @ 10V | 35ns | 16 ns | 20V | -30V | 11.4A Tc | 30V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| SI4434DY-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2017 | TrenchFET® | Active | 1 (Unlimited) | 8 | EAR99 | ROHS3 Compliant | Lead Free | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | 186.993455mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | DUAL | GULL WING | 260 | 40 | 8 | 1 | 1 | Single | 1.56W | 16 ns | 1.56W Ta | 2.1A | SWITCHING | 47 ns | SILICON | N-Channel | 155m Ω @ 3A, 10V | 4V @ 250μA | 50nC @ 10V | 23ns | 19 ns | 20V | 250V | 2.1A Ta | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRF740SPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 11 Weeks | Surface Mount | Tube | 2006 | Active | 1 (Unlimited) | 150°C | -55°C | 10.67mm | ROHS3 Compliant | Lead Free | 10A | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Unknown | 4.83mm | 9.65mm | 550mOhm | Surface Mount | 1.437803g | -55°C~150°C TJ | 400V | MOSFET (Metal Oxide) | 1 | 1 | Single | 125W | 14 ns | 4V | 550mOhm | D2PAK | 3.1W Ta 125W Tc | 10A | 50 ns | N-Channel | 550mOhm @ 6A, 10V | 4V @ 250μA | 1400pF @ 25V | 63nC @ 10V | 27ns | 24 ns | 20V | 400V | 10A Tc | 400V | 1.4nF | 10V | ±20V | 550 mΩ | ||||||||||||||||||||||||||||||||||||
| SIHB28N60EF-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 21 Weeks | Surface Mount | Tube | 2015 | Active | 1 (Unlimited) | 2 | 10.67mm | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.83mm | 9.65mm | Surface Mount | 1.946308g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | 1 | Single | 24 ns | 250W Tc | 28A | SWITCHING | 600V | 82 ns | SILICON | N-Channel | 123m Ω @ 14A, 10V | 4V @ 250μA | 2714pF @ 100V | 120nC @ 10V | 40ns | 39 ns | 20V | 28A Tc | 600V | 75A | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| SIHP22N60S-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2010 | yes | Obsolete | 1 (Unlimited) | 3 | 150°C | -55°C | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 | Unknown | 190mOhm | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | SINGLE | 3 | FET General Purpose Power | 250W | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | 250W | 24 ns | 2V | 22A | SWITCHING | 77 ns | N-Channel | 190m Ω @ 11A, 10V | 4V @ 250μA | 2810pF @ 25V | 110nC @ 10V | 68ns | 59 ns | 20V | 600V | 22A Tc | 65A | 690 mJ | ||||||||||||||||||||||||||||||||||||||||
| SI7802DN-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | yes | Obsolete | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | No | 8 | PowerPAK® 1212-8 | No SVHC | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 40 | 8 | S-XDSO-C5 | FET General Purpose Power | 1 | DRAIN | Single | 1.5W | 10 ns | 2.4V | 1.5W Ta | 1.24A | SWITCHING | 0.435Ohm | 21 ns | SILICON | N-Channel | 435m Ω @ 1.95A, 10V | 3.6V @ 250μA | 21nC @ 10V | 10ns | 10 ns | 20V | 250V | 1.24A Ta | 8A | 0.3 mJ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| SIR866DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | TrenchFET® | yes | Obsolete | 1 (Unlimited) | 5 | EAR99 | 4.9mm | ROHS3 Compliant | Lead Free | No | 8 | PowerPAK® SO-8 | Unknown | 1.04mm | 5.89mm | 1.9mOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 40 | 8 | R-XDSO-C5 | 1 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 5.4W | 42 ns | 2.3V | 5.4W Ta 83W Tc | 60A | SWITCHING | 66 ns | SILICON | N-Channel | 1.9m Ω @ 20A, 10V | 2.3V @ 250μA | 4730pF @ 10V | 107nC @ 10V | 23ns | 49 ns | 20V | 20V | 39A | 60A Tc | 4.5V 10V | ±20V | |||||||||||||||||||||||||||
| SUD45P03-09-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | TrenchFET® | Obsolete | 1 (Unlimited) | 2 | EAR99 | 6.7056mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.38mm | 6.223mm | 8.7mOhm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | 4 | R-PSSO-G2 | 1 | Other Transistors | 1 | DRAIN | Single | 2.1W | 12 ns | -2.5V | 2.1W Ta 41.7W Tc | -45A | 150°C | SWITCHING | 40 ns | SILICON | P-Channel | 8.7m Ω @ 20A, 10V | 2.5V @ 250μA | 2700pF @ 15V | 90nC @ 10V | 11ns | 12 ns | 20V | -30V | 45A Tc | 30V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| SUP90N04-3M3P-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Bulk | 2001 | TrenchFET® | Obsolete | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | No | 3 | TO-220-3 | No SVHC | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | SINGLE | 260 | 30 | 3 | 1 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | 3.1W | 11 ns | 1V | 3.1W Ta 125W Tc | 90A | SWITCHING | 40V | 45 ns | SILICON | N-Channel | 3.3m Ω @ 22A, 10V | 2.5V @ 250μA | 5286pF @ 20V | 131nC @ 10V | 7ns | 7 ns | 20V | 90A Tc | 40V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SI5461EDC-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2009 | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | 3.0988mm | ROHS3 Compliant | Lead Free | No | 8 | 8-SMD, Flat Lead | 1.0922mm | 1.7018mm | 45mOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | DUAL | C BEND | 260 | 40 | 8 | Other Transistors | 1 | Single | 1.3W | 2.5 μs | 1.3W Ta | -6.2A | 27 μs | SILICON | P-Channel | 45m Ω @ 5A, 4.5V | 450mV @ 250μA (Min) | 20nC @ 4.5V | 4.5μs | 4.5 μs | 12V | -20V | 4.5A | 4.5A Ta | 20V | 1.8V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||
| SI1471DH-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 15 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | TrenchFET® | yes | Obsolete | 1 (Unlimited) | 6 | EAR99 | 2mm | ROHS3 Compliant | No | 70 | 6-TSSOP, SC-88, SOT-363 | 1mm | 1.25mm | Surface Mount | 7.512624mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 6 | R-PDSO-G6 | 1 | Other Transistors | 1 | Single | 4 ns | 1.5W Ta 2.78W Tc | 2.8A | SWITCHING | 30V | 23 ns | SILICON | P-Channel | 100m Ω @ 2A, 10V | 1.6V @ 250μA | 445pF @ 15V | 9.8nC @ 4.5V | 12V | 2.7A Tc | 30V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||
| SI4654DY-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2014 | TrenchFET® | Obsolete | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | No | 8 | 8-SOIC (0.154, 3.90mm Width) | 1.5mm | 4mm | Surface Mount | 186.993455mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | DUAL | GULL WING | 260 | 40 | 8 | 1 | 1 | Single | 30 ns | 2.5W Ta 5.9W Tc | 18.6A | SWITCHING | 0.004Ohm | 50 ns | SILICON | N-Channel | 4m Ω @ 15A, 10V | 2.5V @ 250μA | 3770pF @ 15V | 100nC @ 10V | 10ns | 10 ns | 16V | 25V | 28.6A Tc | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||
| SI7703EDN-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | yes | Obsolete | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | No | 8 | PowerPAK® 1212-8 | No SVHC | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | DUAL | C BEND | 260 | 40 | 8 | S-XDSO-C6 | Other Transistors | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 1.3W | 4 ns | -1V | 1.3W Ta | -6.3A | SWITCHING | 23 ns | SILICON | P-Channel | 48m Ω @ 6.3A, 4.5V | 1V @ 800μA | 18nC @ 4.5V | 6ns | 6 ns | 12V | 20V | Schottky Diode (Isolated) | 4.3A | 4.3A Ta | 20A | 1.8V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||
| SI7888DP-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2009 | TrenchFET® | yes | Obsolete | 1 (Unlimited) | 5 | EAR99 | 5.969mm | ROHS3 Compliant | No | 8 | PowerPAK® SO-8 | 1.0668mm | 5.0038mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 20 | 8 | R-XDSO-C5 | FET General Purpose Power | 1 | DRAIN | Single | 1.8W | 10 ns | 1.8W Ta | 9.4A | SWITCHING | 30V | 24 ns | SILICON | N-Channel | 12m Ω @ 12.4A, 10V | 2V @ 250μA | 10.5nC @ 5V | 11ns | 11 ns | 20V | 9.4A Ta | 30V | 50A | 20 mJ | 4.5V 10V | ±12V | |||||||||||||||||||||||||||||||||
| SUD50P04-15-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | TrenchFET® | yes | Obsolete | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.39mm | 6.22mm | 15mOhm | Surface Mount | 1.437803g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | GULL WING | 4 | R-PSSO-G2 | 1 | Other Transistors | 1 | DRAIN | Single | 100W | 15 ns | -1V | 3W Ta 100W Tc | -50A | 75 ns | SILICON | P-Channel | 15m Ω @ 30A, 10V | 1V @ 250μA (Min) | 5400pF @ 25V | 130nC @ 10V | 380ns | 140 ns | 20V | -40V | -1 V | 50A Tc | 40V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| SI4860DY-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | ROHS3 Compliant | Lead Free | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Unknown | 8mOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 8 | FET General Purpose Powers | 1 | Single | 1.6W | 18 ns | 1V | 1.6W Ta | 16A | SWITCHING | 46 ns | SILICON | N-Channel | 8m Ω @ 16A, 10V | 1V @ 250μA (Min) | 18nC @ 4.5V | 12ns | 12 ns | 20V | 30V | 1 V | 11A Ta | 4.5nF | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SIA427DJ-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | TrenchFET® | yes | Active | 1 (Unlimited) | 4 | EAR99 | 2.05mm | ROHS3 Compliant | Lead Free | No | 6 | PowerPAK® SC-70-6 | Unknown | 750μm | 2.05mm | 13mOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | 260 | 40 | 6 | S-PDSO-N4 | 1 | Other Transistors | 1 | DRAIN | Single | 3.5W | 20 ns | 350mV | 3.5W Ta 19W Tc | 12A | SWITCHING | 70 ns | SILICON | P-Channel | 16m Ω @ 8.2A, 4.5V | 800mV @ 250μA | 2300pF @ 4V | 50nC @ 5V | 20ns | 40 ns | 5V | -8V | 12A Tc | 8V | 50A | 1.2V 4.5V | ±5V | ||||||||||||||||||||||||||||||
| SI2307BDS-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | TrenchFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 3.04mm | ROHS3 Compliant | Lead Free | No | 3 | TO-236-3, SC-59, SOT-23-3 | Unknown | 1.02mm | 1.4mm | 78mOhm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 3 | 1 | Other Transistors | 1 | Single | 750mW | 9 ns | -3V | 750mW Ta | -2.5A | 25 ns | SILICON | P-Channel | 78m Ω @ 3.2A, 10V | 3V @ 250μA | 380pF @ 15V | 15nC @ 10V | 12ns | 12 ns | 20V | -30V | -3 V | 2.5A Ta | 30V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
| SI5457DC-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | Active | 1 (Unlimited) | 8 | EAR99 | ROHS3 Compliant | Lead Free | No | 8 | 8-SMD, Flat Lead | 36mOhm | Surface Mount | 84.99187mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | PURE MATTE TIN | DUAL | C BEND | 260 | 30 | 8 | 1 | 1 | Single | 2.3W | 25 ns | 5.7W Tc | 6A | SWITCHING | 30 ns | SILICON | P-Channel | 36m Ω @ 4.9A, 4.5V | 1.4V @ 250μA | 1000pF @ 10V | 38nC @ 10V | 20ns | 12 ns | 12V | -20V | 6A | 6A Tc | 20V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||
| SIA441DJ-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | TrenchFET® | Active | 1 (Unlimited) | 3 | EAR99 | 2.05mm | ROHS3 Compliant | No | 6 | PowerPAK® SC-70-6 | Unknown | 750μm | 2.05mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | 6 | S-PDSO-N3 | 1 | Other Transistors | 1 | DRAIN | Single | 3.5W | 19W Tc | 6.6A | SWITCHING | 0.047Ohm | SILICON | P-Channel | 47m Ω @ 4.4A, 10V | 2.2V @ 250μA | 890pF @ 20V | 35nC @ 10V | 20V | -40V | -1.2 V | 12A Tc | 40V | 30A | 8.5 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SI2323DS-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 15 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | TrenchFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 3.04mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-236-3, SC-59, SOT-23-3 | Unknown | 1.02mm | 1.4mm | 39mOhm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 30 | 3 | 1 | Other Transistors | 1 | Single | 1.25W | 25 ns | -1V | 750mW Ta | -4.7A | SWITCHING | 71 ns | SILICON | P-Channel | 39m Ω @ 4.7A, 4.5V | 1V @ 250μA | 1020pF @ 10V | 19nC @ 4.5V | 43ns | 43 ns | 8V | -20V | -1 V | 3.7A Ta | 20V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||
| SI5442DU-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Cut Tape (CT) | 2013 | TrenchFET® | yes | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | No | 8 | PowerPAK® ChipFET™ Single | 900μm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | C14-0630-ChipFET-Single | Pure Matte Tin (Sn) | 260 | 30 | 1 | FET General Purpose Powers | Single | 3.1W | 10 ns | 3.1W Ta 31W Tc | 12.4A | 150°C | 30 ns | N-Channel | 10m Ω @ 8A, 4.5V | 900mV @ 250μA | 1700pF @ 10V | 45nC @ 8V | 15ns | 10 ns | 8V | 20V | 25A | 25A Tc | 1.8V 4.5V | ±8V |