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IXYS(3783)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Length | RoHS Status | Lead Free | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Subcategory | Qualification Status | Output Voltage | Number of Elements | Configuration | JEDEC-95 Code | Number of Outputs | Output Current | Case Connection | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Reverse Recovery Time | Power Dissipation-Max | Continuous Drain Current (ID) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Isolation Voltage | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IXFT16N120P | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tube | 2008 | HiPerFET™, PolarP2™ | yes | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | Lead Free | AVALANCHE RATED | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | DRAIN | Single | 660W | 660W Tc | 16A | SWITCHING | 0.95Ohm | 66 ns | SILICON | N-Channel | 950m Ω @ 500mA, 10V | 6.5V @ 1mA | 6900pF @ 25V | 120nC @ 10V | 28ns | 35 ns | 30V | 1.2kV | 16A Tc | 1200V | 35A | 800 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||
| IXTT48P20P | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Surface Mount | Tube | 2008 | PolarP™ | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | No | AVALANCHE RATED | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 85MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | PURE TIN | GULL WING | 4 | R-PSSO-G2 | Other Transistors | 1 | DRAIN | Single | 462W | 462W Tc | 48A | SWITCHING | 67 ns | SILICON | P-Channel | 85m Ω @ 24A, 10V | 4.5V @ 250μA | 5400pF @ 25V | 103nC @ 10V | 46ns | 27 ns | 20V | -200V | 48A Tc | 200V | 2500 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXFN230N20T | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Chassis Mount | Tube | 2007 | GigaMOS™ | yes | Active | 1 (Unlimited) | 4 | EAR99 | ROHS3 Compliant | Lead Free | UL RECOGNIZED, AVALANCHE RATED | SOT-227-4, miniBLOC | Chassis Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PUFM-X4 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | ISOLATED | 1090W Tc | 220A | SWITCHING | 0.0075Ohm | 200V | SILICON | N-Channel | 7.5m Ω @ 60A, 10V | 5V @ 8mA | 28000pF @ 25V | 378nC @ 10V | 220A Tc | 200V | 630A | 3000 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXFN56N90P | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 35 Weeks | Chassis Mount | Tube | 2011 | Polar™ | yes | Active | 1 (Unlimited) | 4 | ROHS3 Compliant | Lead Free | 4 | AVALANCHE RATED, UL RECOGNIZED | SOT-227-4, miniBLOC | 135MOhm | Chassis Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 4 | FET General Purpose Power | Not Qualified | 1 | ISOLATED | Single | 1kW | 1000W Tc | 56A | SWITCHING | 93 ns | SILICON | N-Channel | 135m Ω @ 28A, 10V | 6.5V @ 3mA | 23000pF @ 25V | 375nC @ 10V | 80ns | 38 ns | 900V | 56A Tc | 168A | 2000 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IXTH12N150 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Through Hole | Tube | 2012 | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | AVALANCHE RATED | TO-247-3 | not_compliant | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | R-PSFM-T3 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AD | DRAIN | 890W | 890W Tc | 12A | SWITCHING | 2Ohm | SILICON | N-Channel | 2 Ω @ 6A, 10V | 4.5V @ 250μA | 3720pF @ 25V | 106nC @ 10V | 30V | 12A Tc | 1500V | 40A | 750 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| IXFH170N10P | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Through Hole | Tube | 2006 | HiPerFET™, PolarP2™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 16.26mm | ROHS3 Compliant | Lead Free | No | 3 | AVALANCHE RATED | TO-247-3 | No SVHC | 21.46mm | 5.3mm | 9MOhm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | FET General Purpose Power | 1 | TO-247AD | DRAIN | Single | 714W | 35 ns | 5V | 715W Tc | 170A | SWITCHING | 90 ns | SILICON | N-Channel | 9m Ω @ 500mA, 10V | 5V @ 4mA | 6000pF @ 25V | 198nC @ 10V | 50ns | 33 ns | 20V | 100V | 170A Tc | 2000 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||
| IXTX200N10L2 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Through Hole | Tube | 2010 | Linear L2™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | No | 247 | AVALANCHE RATED | TO-247-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | TIN SILVER COPPER | SINGLE | 3 | R-PSIP-T3 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 1.04kW | 1040W Tc | 200A | SWITCHING | SILICON | N-Channel | 11m Ω @ 100A, 10V | 4.5V @ 3mA | 23000pF @ 25V | 540nC @ 10V | 200A Tc | 100V | 500A | 5000 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IXFB30N120P | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Through Hole | Tube | 2010 | HiPerFET™, PolarP2™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 3 | AVALANCHE RATED | TO-264-3, TO-264AA | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | 3 | FET General Purpose Power | Not Qualified | 1 | DRAIN | Single | 1.25kW | 1250W Tc | 30A | SWITCHING | 95 ns | SILICON | N-Channel | 350m Ω @ 500mA, 10V | 6.5V @ 1mA | 22500pF @ 25V | 310nC @ 10V | 60ns | 56 ns | 30V | 1.2kV | 30A Tc | 1200V | 75A | 2000 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXTP86N20T | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Through Hole | Tube | 2006 | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 3 | AVALANCHE RATED | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | DRAIN | 480W Tc | 86A | SWITCHING | 0.029Ohm | 200V | SILICON | N-Channel | 29m Ω @ 500mA, 10V | 5V @ 1mA | 4500pF @ 25V | 90nC @ 10V | 86A Tc | 200V | 260A | 1000 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IXFP110N15T2 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Through Hole | Tube | 2008 | GigaMOS™, HiPerFET™, TrenchT2™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | AVALANCHE RATED | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | 3 | FET General Purpose Power | Not Qualified | 1 | TO-220AB | DRAIN | Single | 480W | 480W Tc | 110A | SWITCHING | 33 ns | SILICON | N-Channel | 13m Ω @ 55A, 10V | 4.5V @ 250μA | 8600pF @ 25V | 150nC @ 10V | 16ns | 18 ns | 4.5V | 150V | 110A Tc | 800 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXFP102N15T | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Through Hole | Tube | 2009 | HiPerFET™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | AVALANCHE RATED | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | DRAIN | 455W Tc | 102A | SWITCHING | 0.018Ohm | 150V | SILICON | N-Channel | 18m Ω @ 500mA, 10V | 5V @ 1mA | 5220pF @ 25V | 87nC @ 10V | 102A Tc | 150V | 300A | 750 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXFA230N075T2 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Surface Mount | Tube | 2010 | HiPerFET™, TrenchT2™ | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | AVALANCHE RATED | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | unknown | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | PURE TIN | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 480W | 480W Tc | 230A | SWITCHING | 0.0042Ohm | 75V | SILICON | N-Channel | 4.2m Ω @ 50A, 10V | 4V @ 1mA | 10500pF @ 25V | 178nC @ 10V | 20V | 230A Tc | 75V | 700A | 850 mJ | 10V | |||||||||||||||||||||||||||||||||||
| IXFA26N50P3 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Surface Mount | Tube | 2013 | HiPerFET™, Polar3™ | Active | 1 (Unlimited) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | e3 | Matte Tin (Sn) | 1 | 500W | 500W Tc | 26A | N-Channel | 230m Ω @ 13A, 10V | 5V @ 4mA | 2220pF @ 25V | 42nC @ 10V | 30V | 26A Tc | 500V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTQ74N20P | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Through Hole | Tube | 2006 | PolarHT™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | AVALANCHE RATED | TO-3P-3, SC-65-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 3 | FET General Purpose Powers | Not Qualified | 1 | DRAIN | Single | 400W | 480W Tc | 74A | SWITCHING | 60 ns | SILICON | N-Channel | 34m Ω @ 37A, 10V | 5V @ 250μA | 3300pF @ 25V | 107nC @ 10V | 21ns | 21 ns | 20V | 200V | 74A Tc | 200A | 1000 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXFP180N10T2 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Through Hole | Tube | 2010 | GigaMOS™, HiPerFET™, TrenchT2™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | AVALANCHE RATED | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | DRAIN | 480W Tc | 180A | SWITCHING | 0.006Ohm | 100V | SILICON | N-Channel | 6m Ω @ 50A, 10V | 4V @ 250μA | 10500pF @ 25V | 185nC @ 10V | 180A Tc | 100V | 450A | 750 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IXFK420N10T | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | Through Hole | Tube | 2009 | GigaMOS™ HiPerFET™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | AVALANCHE RATED | TO-264-3, TO-264AA | unknown | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 1670W Tc | 420A | SWITCHING | 0.0026Ohm | 100V | SILICON | N-Channel | 2.6m Ω @ 60A, 10V | 5V @ 8mA | 47000pF @ 25V | 670nC @ 10V | 420A Tc | 100V | 1000A | 5000 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXFR44N50Q | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Through Hole | Tube | 2003 | HiPerFET™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | 3 | AVALANCHE RATED | ISOPLUS247™ | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | 3 | FET General Purpose Power | Not Qualified | 1 | ISOLATED | Single | 310W | 310W Tc | 34A | SWITCHING | 0.12Ohm | 75 ns | SILICON | N-Channel | 120m Ω @ 22A, 10V | 4V @ 4mA | 7000pF @ 25V | 190nC @ 10V | 22ns | 10 ns | 20V | 500V | 34A Tc | 176A | 2500 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXFX40N90P | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Through Hole | Tube | 2011 | HiPerFET™, PolarP2™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | 247 | AVALANCHE RATED | TO-247-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSIP-T3 | FET General Purpose Power | Not Qualified | 1 | DRAIN | Single | 960W | 960W Tc | 40A | SWITCHING | 0.21Ohm | 77 ns | SILICON | N-Channel | 230m Ω @ 20A, 10V | 6.5V @ 1mA | 14000pF @ 25V | 230nC @ 10V | 50ns | 46 ns | 900V | 40A Tc | 80A | 1500 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| IXFR20N120P | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Through Hole | Tube | 2008 | HiPerFET™, PolarP2™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | 3 | UL RECOGNIZED, AVALANCHE RATED | ISOPLUS247™ | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | 3 | FET General Purpose Power | Not Qualified | 1 | ISOLATED | Single | 290W | 290W Tc | 13A | SWITCHING | 72 ns | SILICON | N-Channel | 630m Ω @ 10A, 10V | 6.5V @ 1mA | 11100pF @ 25V | 193nC @ 10V | 45ns | 70 ns | 30V | 1.2kV | 13A Tc | 1200V | 50A | 1000 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| IXFN240N15T2 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Chassis Mount | Tube | 2009 | GigaMOS™ | yes | Active | 1 (Unlimited) | 4 | EAR99 | ROHS3 Compliant | Lead Free | AVALANCHE RATED, UL RECOGNIZED | SOT-227-4, miniBLOC | unknown | Chassis Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 120A | NICKEL | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PUFM-X4 | FET General Purpose Power | Not Qualified | 150V | 1 | SINGLE WITH BUILT-IN DIODE | 1 | 240A | ISOLATED | 830W | 48 ns | 830W Tc | 240A | SWITCHING | 0.0052Ohm | 77 ns | SILICON | N-Channel | 5.2m Ω @ 60A, 10V | 5V @ 8mA | 32000pF @ 25V | 460nC @ 10V | 125ns | 145 ns | 20V | 150V | 240A Tc | 600A | 2000 mJ | 10V | ±20V | |||||||||||||||||||||||||||
| IXFN20N120P | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Chassis Mount | Tube | 2008 | Polar™ | yes | Active | 1 (Unlimited) | 4 | ROHS3 Compliant | 4 | UL RECOGNIZED, AVALANCHE RATED | SOT-227-4, miniBLOC | Chassis Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 4 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | ISOLATED | 595W | 595W Tc | 20A | SWITCHING | 0.57Ohm | 72 ns | SILICON | N-Channel | 570m Ω @ 10A, 10V | 6.5V @ 1mA | 11100pF @ 25V | 193nC @ 10V | 45ns | 70 ns | 30V | 1.2kV | 20A Tc | 1200V | 50A | 1000 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IXFH26N50Q | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2003 | HiPerFET™ | yes | Obsolete | Not Applicable | 3 | Through Hole | EAR99 | RoHS Compliant | Lead Free | 26A | No | 3 | AVALANCHE RATED | TO-247-3 | Unknown | 200mOhm | Through Hole | 6g | -55°C~150°C TJ | 500V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 3 | FET General Purpose Power | 1 | TO-247AD | DRAIN | Single | 300W | 4V | 250 ns | 300W Tc | 26A | SWITCHING | 55 ns | SILICON | N-Channel | 200m Ω @ 13A, 10V | 4.5V @ 4mA | 3900pF @ 25V | 95nC @ 10V | 30ns | 16 ns | 20V | 500V | 500V | 4.5 V | 26A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||
| IXFN180N20 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Tube | 2000 | HiPerFET™ | yes | Obsolete | Not Applicable | 4 | Screw | EAR99 | ROHS3 Compliant | 180A | 3 | AVALANCHE RATED | SOT-227-4, miniBLOC | No SVHC | 10MOhm | Chassis Mount | 46g | -55°C~150°C TJ | 200V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PUFM-X4 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | ISOLATED | 700W | 4V | 700W Tc | 180A | SWITCHING | 2.5kV | 180 ns | SILICON | N-Channel | 10m Ω @ 500mA, 10V | 4V @ 8mA | 22000pF @ 25V | 660nC @ 10V | 85ns | 56 ns | 20V | 200V | 200V | 4 V | 180A Tc | 720A | 4000 mJ | 10V | ±20V | |||||||||||||||||||||||||
| IXFX120N20 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2003 | HiPerFET™ | yes | Obsolete | Not Applicable | 3 | EAR99 | RoHS Compliant | Lead Free | 120A | No | 3 | AVALANCHE RATED | TO-247-3 | 17MOhm | Through Hole | -55°C~150°C TJ | 200V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | FET General Purpose Power | 1 | DRAIN | Single | 560W | 560W Tc | 120A | SWITCHING | 110 ns | SILICON | N-Channel | 17m Ω @ 60A, 10V | 4V @ 8mA | 9100pF @ 25V | 300nC @ 10V | 65ns | 35 ns | 20V | 200V | 120A Tc | 480A | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXFP16N50P3 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Through Hole | Tube | 2011 | HiPerFET™, Polar3™ | Active | 1 (Unlimited) | 3 | EAR99 | 10.66mm | ROHS3 Compliant | 3 | AVALANCHE RATED | TO-220-3 | 16mm | 4.83mm | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 19 ns | 330W Tc | 16A | SWITCHING | 500V | 44 ns | SILICON | N-Channel | 360m Ω @ 8A, 10V | 5V @ 2.5mA | 1515pF @ 25V | 29nC @ 10V | 30V | 16A Tc | 500V | 40A | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| IXTT30N50L2 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Surface Mount | Tube | 2006 | Linear L2™ | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | 3 | AVALANCHE RATED | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | No SVHC | unknown | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | PURE TIN | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE AND RESISTOR | DRAIN | 400W | 2.5V | 400W Tc | 30A | SWITCHING | 0.2Ohm | 500V | SILICON | N-Channel | 200m Ω @ 15A, 10V | 4.5V @ 250μA | 8100pF @ 25V | 240nC @ 10V | 2.5 V | 30A Tc | 500V | 60A | 1500 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||
| IXTQ82N25P | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Through Hole | Tube | 2006 | PolarHT™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | AVALANCHE RATED | TO-3P-3, SC-65-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | DRAIN | Single | 500W | 500W Tc | 82A | SWITCHING | 78 ns | SILICON | N-Channel | 35m Ω @ 41A, 10V | 5V @ 250μA | 4800pF @ 25V | 142nC @ 10V | 20ns | 22 ns | 20V | 250V | 82A Tc | 200A | 1000 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXFT86N30T | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tube | 2009 | HiPerFET™, TrenchT2™ | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | 3 | AVALANCHE RATED | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 860W Tc | 86A | SWITCHING | SILICON | N-Channel | 43m Ω @ 500mA, 10V | 5V @ 4mA | 11300pF @ 25V | 180nC @ 10V | 86A Tc | 300V | 190A | 2000 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXFT20N80P | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Surface Mount | Tube | 2006 | HiPerFET™, PolarHT™ | yes | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | Lead Free | No | AVALANCHE RATED | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | GULL WING | 4 | R-PSSO-G2 | 1 | DRAIN | Single | 500W | 500W Tc | 20A | SWITCHING | 0.52Ohm | 85 ns | SILICON | N-Channel | 520m Ω @ 10A, 10V | 5V @ 4mA | 4685pF @ 25V | 86nC @ 10V | 24ns | 24 ns | 30V | 800V | 20A Tc | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IXFT150N17T2 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Tube | HiPerFET™, TrenchT2™ | yes | Active | 1 | 2 | EAR99 | Non-RoHS Compliant | AVALANCHE RATED | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | YES | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 880W Tc | SWITCHING | 0.012Ohm | 175V | SILICON | N-Channel | 12m Ω @ 75A, 10V | 4.5V @ 1mA | 14600pF @ 25V | 233nC @ 10V | 150A | 150A Tc | 175V | 400A | 1000 mJ | 10V | ±20V |