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IXYS(3783)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Length | RoHS Status | Lead Free | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Number of Drivers | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Technology | Operating Mode | Manufacturer Package Identifier | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Output Voltage | Number of Elements | Configuration | JEDEC-95 Code | Number of Outputs | Output Current | Case Connection | Polarity/Channel Type | Power Dissipation-Max (Abs) | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Input | Reverse Recovery Time | Power Dissipation-Max | Reverse Voltage | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Isolation Voltage | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Collector Cutoff (Max) | Collector Emitter Saturation Voltage | Turn On Time | Vce(on) (Max) @ Vge, Ic | Turn Off Time-Nom (toff) | IGBT Type | NTC Thermistor | Gate-Emitter Voltage-Max | Input Capacitance (Cies) @ Vce | VCEsat-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Gate-Emitter Thr Voltage-Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IXGN72N60A3 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Chassis Mount, Screw | 2008 | GenX3™ | yes | Active | 1 (Unlimited) | 4 | ROHS3 Compliant | Lead Free | 4 | UL RECOGNIZED, LOW CONDUCTION LOSS | SOT-227-4, miniBLOC | Chassis Mount | -55°C~150°C TJ | Nickel (Ni) | UPPER | UNSPECIFIED | IXG*72N60 | 4 | 360W | 1 | Single | ISOLATED | N-CHANNEL | 360W | Standard | 160A | 600V | 600V | POWER CONTROL | SILICON | 6.6nF | 75μA | 1.35V | 61 ns | 1.35V @ 15V, 60A | 885 ns | PT | No | 6.6nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MIXA10W1200TML | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | Chassis Mount | Bulk | 2011 | Active | 1 (Unlimited) | 24 | ROHS3 Compliant | UL RECOGNIZED | E1 | Chassis Mount | -40°C~125°C TJ | UPPER | UNSPECIFIED | R-PUFM-X24 | Insulated Gate BIP Transistors | 65W | 65W | 6 | Three Phase Inverter | ISOLATED | N-CHANNEL | Standard | 17A | 1.2kV | 2.1V | POWER CONTROL | SILICON | 150μA | 110 ns | 2.1V @ 15V, 9A | 350 ns | PT | Yes | 20V | 1200V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MWI50-06A7 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | Chassis Mount, Screw | Bulk | 2007 | yes | Active | 1 (Unlimited) | 11 | ROHS3 Compliant | Lead Free | 18 | ULTRA FAST, LOW SWITCHING LOSS, LOW SATURATION VOLTAGE | E2 | Chassis Mount | -40°C~150°C TJ | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | UPPER | PIN/PEG | MWI | 17 | R-XUFM-P11 | Insulated Gate BIP Transistors | 225W | 225W | 6 | Three Phase Inverter | ISOLATED | N-CHANNEL | 50 ns | Standard | 72A | 600V | 600V | POWER CONTROL | 300 ns | SILICON | 2.8nF | 600μA | 110 ns | 2.4V @ 15V, 50A | 330 ns | NPT | No | 20V | 2.8nF @ 25V | 2.4 V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MUBW15-12A6K | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | Chassis Mount, PCB, Screw | Bulk | 2007 | yes | Active | 1 (Unlimited) | 25 | EAR99 | 82mm | ROHS3 Compliant | Lead Free | 25 | UL RECOGNIZED | E1 | 17.1mm | 37.4mm | Chassis Mount | -40°C~125°C TJ | e3 | Matte Tin (Sn) | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | MUBW | 25 | Insulated Gate BIP Transistors | Not Qualified | 90W | 90W | 7 | Three Phase Inverter with Brake | 89A | ISOLATED | N-CHANNEL | Three Phase Bridge Rectifier | 1.6kV | 19A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 600pF | 600μA | 90 ns | 3.4V @ 15V, 15A | 350 ns | NPT | Yes | 20V | 0.6nF @ 25V | 3.4 V | 1200V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MUBW30-12A6K | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | Chassis Mount, Screw | Bulk | 2007 | yes | Active | 1 (Unlimited) | 25 | ROHS3 Compliant | Lead Free | 1 | UL RECOGNIZED | E1 | Chassis Mount | -40°C~125°C TJ | e3 | Matte Tin (Sn) | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | MUBW | 25 | R-XUFM-X25 | Not Qualified | 130W | 130W | 7 | Three Phase Inverter with Brake | ISOLATED | N-CHANNEL | Three Phase Bridge Rectifier | 1.6kV | 30A | 1.2kV | 3.8V | POWER CONTROL | SILICON | 1nF | 1mA | 180 ns | 3.8V @ 15V, 30A | 570 ns | NPT | Yes | 1nF @ 25V | 1200V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXYN120N120C3 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Surface Mount | 2013 | XPT™, GenX3™ | Active | 1 (Unlimited) | ROHS3 Compliant | SOT-227-4, miniBLOC | Surface Mount | -55°C~175°C TJ | 1.2kW | 1200W | Single | Standard | 240A | 1.2kV | 3.2V | 25μA | 3.2V @ 15V, 120A | No | 1200V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXA60IF1200NA | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Chassis, Screw, Stud, Surface Mount | 2010 | yes | Active | 1 (Unlimited) | 4 | EAR99 | 38.23mm | ROHS3 Compliant | Lead Free | 4 | UL RECOGNIZED | SOT-227-4, miniBLOC | No SVHC | 9.6mm | 25.25mm | Chassis, Stud Mount | -40°C~150°C TJ | NICKEL | UPPER | UNSPECIFIED | 4 | Insulated Gate BIP Transistors | 290W | 1 | Single | ISOLATED | N-CHANNEL | 290W | Standard | 350 ns | 88A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 100μA | 2.1V | 110 ns | 2.1V @ 15V, 50A | 350 ns | PT | No | 20V | 1200V | 6.5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXYN80N90C3H1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Chassis Mount, Panel | 2013 | XPT™, GenX3™ | Active | 1 (Unlimited) | 38.23mm | ROHS3 Compliant | 4 | SOT-227-4, miniBLOC | 9.6mm | 25.07mm | Chassis Mount | 30.000004g | -55°C~150°C TJ | 500W | 500W | Single | Standard | 115A | 900V | 900V | 4.55nF | 25μA | 2.7V | 2.7V @ 15V, 80A | No | 4.55nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXA27IF1200HJ | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | 2013 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 16.13mm | ROHS3 Compliant | Lead Free | 3 | ISOPLUS247™ | No SVHC | 21.34mm | 5.21mm | Through Hole | -40°C~150°C TJ | e1 | TIN SILVER COPPER | 3 | Insulated Gate BIP Transistors | 150W | 1 | Single | TO-247AD | ISOLATED | N-CHANNEL | 150W | Standard | 43A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 100μA | 1.8V | 110 ns | 2.1V @ 15V, 25A | 350 ns | PT | No | 20V | 1200V | 6.5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXXN200N60B3 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Chassis Mount | 2013 | XPT™, GenX3™ | Active | 1 (Unlimited) | 4 | ROHS3 Compliant | UL RECOGNIZED | SOT-227-4, miniBLOC | Chassis Mount | -55°C~175°C TJ | UPPER | UNSPECIFIED | R-PUFM-X4 | Insulated Gate BIP Transistors | 940W | 940W | 1 | Single | ISOLATED | N-CHANNEL | Standard | 280A | 600V | 1.7V | POWER CONTROL | SILICON | 9.97nF | 50μA | 140 ns | 1.7V @ 15V, 100A | 395 ns | PT | No | 20V | 9.97nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXXN200N60B3H1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Chassis Mount | 2013 | XPT™, GenX3™ | Active | 1 (Unlimited) | ROHS3 Compliant | SOT-227-4, miniBLOC | Chassis Mount | -55°C~150°C TJ | 780W | 780W | Single | Standard | 200A | 600V | 1.7V | 9.97nF | 50μA | 1.7V @ 15V, 100A | PT | No | 9.97nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MWI15-12A7 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | Chassis Mount, Screw | Bulk | 2008 | yes | Active | 1 (Unlimited) | 11 | ROHS3 Compliant | 2 | UL RECOGNIZED | E2 | Chassis Mount | -40°C~125°C TJ | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | UPPER | UNSPECIFIED | MWI | 20 | R-XUFM-X11 | Insulated Gate BIP Transistors | 140W | 140W | 6 | Three Phase Inverter | ISOLATED | N-CHANNEL | Standard | 1.2kV | 30A | 1.2kV | 2.6V | POWER CONTROL | SILICON | 1nF | 900μA | 175 ns | 2.6V @ 15V, 15A | 570 ns | NPT | No | 1nF @ 25V | 1200V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MIXA40WB1200TED | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | Chassis Mount | Bulk | 2011 | yes | Active | 1 (Unlimited) | 24 | ROHS3 Compliant | UL RECOGNIZED | E2 | Chassis Mount | -40°C~125°C TJ | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 24 | R-XUFM-X24 | Insulated Gate BIP Transistors | Not Qualified | 195W | 7 | Three Phase Inverter with Brake | ISOLATED | N-CHANNEL | 195W | Three Phase Bridge Rectifier | 60A | 1.2kV | 2.1V | POWER CONTROL | SILICON | 2.1mA | 1.2kV | 110 ns | 2.1V @ 15V, 35A | 350 ns | PT | Yes | 20V | 1200V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXXN100N60B3H1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
8 Weeks | Chassis Mount | 2013 | XPT™, GenX3™ | Active | 1 (Unlimited) | 4 | ROHS3 Compliant | Lead Free | AVALANCHE RATED, UL RECOGNIZED | SOT-227-4, miniBLOC | Chassis Mount | -55°C~150°C TJ | UPPER | UNSPECIFIED | IXX*N60 | 4 | R-PUFM-X4 | Insulated Gate BIP Transistors | 500W | 500W | 1 | Single | ISOLATED | N-CHANNEL | Standard | 170A | 600V | 1.8V | POWER CONTROL | SILICON | 4.86nF | 50μA | 92 ns | 1.8V @ 15V, 70A | 350 ns | PT | No | 20V | 4.86nF @ 25V | 5.5 V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MDI145-12A3 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | 2000 | yes | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | UL RECOGNIZED | Y4-M5 | Chassis Mount | -40°C~150°C TJ | UPPER | UNSPECIFIED | MDI | 7 | NO | R-XUFM-X5 | Insulated Gate BIP Transistors | 700W | 1 | Single | ISOLATED | N-CHANNEL | 735W | Standard | POWER CONTROL | SILICON | 6mA | 160 ns | 2.7V @ 15V, 100A | 690 ns | NPT | No | 20V | 6.5nF @ 25V | 3 V | 1200V | 160A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGN200N60B3 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Chassis Mount | 2009 | GenX3™ | yes | Active | 1 (Unlimited) | 4 | EAR99 | ROHS3 Compliant | Lead Free | 4 | UL RECOGNIZED, LOW CONDUCTION LOSS | SOT-227-4, miniBLOC | Chassis Mount | 38.000013g | -55°C~150°C TJ | Nickel (Ni) | UPPER | UNSPECIFIED | IXG*200N60 | 4 | Insulated Gate BIP Transistors | 830W | 1 | Single | ISOLATED | N-CHANNEL | 830W | 44 ns | Standard | 300A | 600V | 600V | POWER CONTROL | 310 ns | SILICON | 26nF | 50μA | 1.35V | 122 ns | 1.5V @ 15V, 100A | 730 ns | PT | No | 20V | 26nF @ 25V | 1.5 V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXDN75N120 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Chassis Mount, Screw | 2000 | yes | Active | 1 (Unlimited) | 4 | ROHS3 Compliant | Lead Free | 4 | UL RECOGNIZED | SOT-227-4, miniBLOC | Chassis Mount | 38.000013g | -40°C~150°C TJ | Nickel (Ni) | UPPER | UNSPECIFIED | 4 | Insulated Gate BIP Transistors | 660W | 660W | 1 | Single | ISOLATED | N-CHANNEL | Standard | 150A | 1.2kV | 1.2kV | MOTOR CONTROL | SILICON | 5.5nF | 4mA | 2.2V | 150 ns | 2.7V @ 15V, 75A | 700 ns | NPT | No | 20V | 5.5nF @ 25V | 2.7 V | 1200V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH80N65X2 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 19 Weeks | Through Hole | Tube | 2015 | HiPerFET™ | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | AVALANCHE RATED | TO-247-3 | not_compliant | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 890W Tc | 80A | SWITCHING | 0.038Ohm | 650V | SILICON | N-Channel | 40m Ω @ 40A, 10V | 5.5V @ 4mA | 8245pF @ 25V | 143nC @ 10V | 80A Tc | 650V | 160A | 3000 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN360N10T | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Chassis Mount, Screw | Tube | 2009 | HiPerFET™ | yes | Active | 1 (Unlimited) | 4 | EAR99 | ROHS3 Compliant | Lead Free | No | 4 | AVALANCHE RATED, UL RECOGNIZED | SOT-227-4, miniBLOC | 2.6MOhm | Chassis Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | NICKEL | UPPER | UNSPECIFIED | 4 | FET General Purpose Power | 1 | ISOLATED | Single | 830W | 830W Tc | 360A | SWITCHING | 80 ns | SILICON | N-Channel | 2.6m Ω @ 180A, 10V | 4.5V @ 250μA | 36000pF @ 25V | 505nC @ 10V | 100ns | 160 ns | 20V | 360A Tc | 100V | 900A | 2000 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK360N15T2 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Through Hole | Tube | 2009 | GigaMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | AVALANCHE RATED | TO-264-3, TO-264AA | 1 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 100A | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | FET General Purpose Power | Not Qualified | 150V | 1 | SINGLE WITH BUILT-IN DIODE | 360A | DRAIN | 50 ns | 1670W Tc | 360A | SWITCHING | 0.004Ohm | 115 ns | SILICON | N-Channel | 4m Ω @ 60A, 10V | 5V @ 8mA | 47500pF @ 25V | 715nC @ 10V | 170ns | 265 ns | 360A Tc | 900A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN360N15T2 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Chassis Mount | Tube | 2009 | GigaMOS™ | yes | Active | 1 (Unlimited) | 4 | EAR99 | ROHS3 Compliant | Lead Free | UL RECOGNIZED, AVALANCHE RATED | SOT-227-4, miniBLOC | unknown | 4mOhm | Chassis Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 100A | NICKEL | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PUFM-X4 | FET General Purpose Power | Not Qualified | 150V | 1 | SINGLE WITH BUILT-IN DIODE | 1 | 310A | ISOLATED | 50 ns | 1070W Tc | 310A | SWITCHING | 115 ns | SILICON | N-Channel | 4m Ω @ 60A, 10V | 5V @ 8mA | 47500pF @ 25V | 715nC @ 10V | 170ns | 265 ns | 310A Tc | 900A | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTK90N25L2 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Through Hole | Tube | 2008 | Linear L2™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | AVALANCHE RATED | TO-264-3, TO-264AA | No SVHC | unknown | 33MOhm | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | TIN SILVER COPPER | NOT SPECIFIED | NOT SPECIFIED | 3 | FET General Purpose Power | Not Qualified | 1 | DRAIN | Single | 960W | 2V | 960W Tc | 90A | SWITCHING | SILICON | N-Channel | 33m Ω @ 45A, 10V | 4.5V @ 3mA | 23000pF @ 25V | 640nC @ 10V | 20V | 250V | 2 V | 90A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH80N65X2 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 15 Weeks | Through Hole | Tube | 2015 | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-247-3 | not_compliant | 25.66mm | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | IXTH80N65X2 | NOT SPECIFIED | NOT SPECIFIED | 1 | 890W | 36 ns | 890W Tc | 80A | 150°C | 72 ns | N-Channel | 40m Ω @ 40A, 10V | 4.5V @ 4mA | 7753pF @ 25V | 144nC @ 10V | 30V | 650V | 80A Tc | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH400N075T2 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | Through Hole | Tube | 2009 | GigaMOS™, HiPerFET™, TrenchT2™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | AVALANCHE RATED | TO-247-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 1000W Tc | 400A | SWITCHING | 0.0023Ohm | 75V | SILICON | N-Channel | 2.3m Ω @ 100A, 10V | 4V @ 250μA | 24000pF @ 25V | 420nC @ 10V | 400A Tc | 75V | 1000A | 1500 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK320N17T2 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Through Hole | Tube | 2009 | GigaMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | No | AVALANCHE RATED | TO-264-3, TO-264AA | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 100A | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | 3 | R-PSFM-T3 | FET General Purpose Power | 170V | 1 | SINGLE WITH BUILT-IN DIODE | 1 | 320A | DRAIN | 46 ns | 1670W Tc | 320A | SWITCHING | 0.0052Ohm | 115 ns | SILICON | N-Channel | 5.2m Ω @ 60A, 10V | 5V @ 8mA | 45000pF @ 25V | 640nC @ 10V | 170ns | 230 ns | 320A Tc | 800A | 5000 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN110N85X | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 19 Weeks | Tube | 2016 | HiPerFET™ | yes | Active | Not Applicable | ROHS3 Compliant | SOT-227-4, miniBLOC | unknown | Chassis Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1170W Tc | N-Channel | 33m Ω @ 55A, 10V | 5.5V @ 8mA | 17000pF @ 25V | 425nC @ 10V | 110A Tc | 850V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY08N100P | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Surface Mount | Tube | 2009 | Polar™ | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | No | AVALANCHE RATED | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | GULL WING | 4 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 42W | 42W Tc | 800mA | SWITCHING | 35 ns | SILICON | N-Channel | 20 Ω @ 500mA, 10V | 4V @ 50μA | 240pF @ 25V | 11.3nC @ 10V | 37ns | 34 ns | 20V | 1kV | 0.8A | 800mA Tc | 1000V | 80 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTT6N120 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Surface Mount | Tube | 2004 | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | AVALANCHE RATED | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | not_compliant | 2.6MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | Not Qualified | 1 | DRAIN | Single | 300W | 300W Tc | 6A | SWITCHING | 42 ns | SILICON | N-Channel | 2.6 Ω @ 3A, 10V | 5V @ 250μA | 1950pF @ 25V | 56nC @ 10V | 33ns | 18 ns | 20V | 1.2kV | 6A | 6A Tc | 1200V | 24A | 500 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFB82N60P | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Through Hole | Tube | 2006 | HiPerFET™, PolarHT™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 3 | AVALANCHE RATED | TO-264-3, TO-264AA | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | DRAIN | Single | 1.25kW | 1250W Tc | 82A | SWITCHING | 0.075Ohm | 79 ns | SILICON | N-Channel | 75m Ω @ 41A, 10V | 5V @ 8mA | 23000pF @ 25V | 240nC @ 10V | 23ns | 24 ns | 30V | 600V | 82A Tc | 200A | 5000 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFL100N50P | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Through Hole | Tube | 2006 | HiPerFET™, PolarHT™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | AVALANCHE RATED, UL RECOGNIZED | ISOPLUS264™ | No SVHC | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | ISOLATED | Single | 625W | 5V | 625W Tc | 70A | SWITCHING | 0.052Ohm | 2.5kV | 110 ns | SILICON | N-Channel | 52m Ω @ 50A, 10V | 5V @ 8mA | 20000pF @ 25V | 240nC @ 10V | 29ns | 26 ns | 30V | 500V | 70A Tc | 250A | 5000 mJ | 10V | ±30V |