Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Lead Pitch | Frequency | Height | Width | Resistance | Mounting Type | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Manufacturer Package Identifier | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Reference Standard | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Polarity/Channel Type | Power Dissipation-Max (Abs) | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Power Dissipation-Max | Recovery Time | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | FET Technology | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | FET Feature | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Feedback Cap-Max (Crss) | Transistor Type | Transition Frequency | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Collector Cutoff (Max) | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Collector Base Voltage (VCBO) | Emitter Base Voltage (VEBO) | hFE Min | DC Current Gain (hFE) (Min) @ Ic, Vce | Vce Saturation (Max) @ Ib, Ic | Frequency - Transition |
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BC860CWE6327HTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2011 | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | LOW NOISE | SC-70, SOT-323 | unknown | Surface Mount | 150°C TJ | e3 | MATTE TIN | DUAL | GULL WING | 260 | 40 | BC860 | R-PDSO-G3 | Not Qualified | 250mW | 250mW | 1 | SINGLE | PNP | 100mA | 45V | 650mV | SWITCHING | SILICON | PNP | 250MHz | 15nA ICBO | 420 @ 2mA 5V | 650mV @ 5mA, 100mA | 250MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BCP55E6327HTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2011 | no | Obsolete | 1 (Unlimited) | 4 | EAR99 | RoHS Compliant | TO-261-4, TO-261AA | compliant | Surface Mount | 150°C TJ | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | BCP55 | YES | R-PDSO-G4 | Not Qualified | 2W | 1 | SINGLE | COLLECTOR | SWITCHING | SILICON | NPN | 100nA ICBO | 60V | 1A | 40 @ 150mA 2V | 500mV @ 50mA, 500mA | 100MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BCX6810E6327HTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2011 | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | TO-243AA | compliant | Surface Mount | 150°C TJ | SINGLE | FLAT | NOT SPECIFIED | NOT SPECIFIED | BCX68 | YES | R-PSSO-F3 | Other Transistors | 3W | 1 | SINGLE | COLLECTOR | NPN | 3W | AMPLIFIER | SILICON | NPN | 100MHz | 100nA ICBO | 20V | 1A | 85 @ 500mA 1V | 500mV @ 100mA, 1A | 100MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC 807-16 E6327 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2007 | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | TO-236-3, SC-59, SOT-23-3 | compliant | Surface Mount | 150°C TJ | e3 | MATTE TIN | DUAL | GULL WING | 260 | 40 | BC807 | YES | R-PDSO-G3 | Other Transistors | Not Qualified | 330mW | 1 | SINGLE | PNP | 0.33W | SILICON | PNP | 200MHz | 100nA ICBO | 45V | 500mA | 100 @ 100mA 1V | 700mV @ 50mA, 500mA | 200MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFN26E6433HTMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2007 | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | No | 3 | TO-236-3, SC-59, SOT-23-3 | 70MHz | Surface Mount | 150°C TJ | DUAL | GULL WING | BFN26 | 360mW | 1 | SINGLE | NPN | 360mW | 200mA | 300V | 300V | SWITCHING | SILICON | NPN | 70MHz | 100nA ICBO | 200mA | 300V | 6V | 30 @ 30mA 10V | 500mV @ 2mA, 20mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BCX5316E6433HTMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2008 | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | No | 4 | TO-243AA | 125MHz | Surface Mount | 150°C TJ | SINGLE | FLAT | BCX53 | R-PSSO-F3 | 2W | 1 | SINGLE | COLLECTOR | PNP | 2W | 1A | 80V | 80V | SWITCHING | SILICON | PNP | 125MHz | 100nA ICBO | 1A | 100V | 5V | 100 @ 150mA 2V | 500mV @ 50mA, 500mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFN39E6327HTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2011 | Obsolete | 1 (Unlimited) | 4 | EAR99 | RoHS Compliant | No | 4 | TO-261-4, TO-261AA | 100MHz | Surface Mount | 150°C TJ | DUAL | GULL WING | 1.5W | 1 | SINGLE | COLLECTOR | PNP | 1.5W | 200mA | 300V | 10V | SWITCHING | SILICON | PNP | 100MHz | 100nA ICBO | 200mA | 300V | 5V | 40 | 30 @ 30mA 10V | 500mV @ 2mA, 20mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PZTA42E6327HTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2011 | yes | Obsolete | 1 (Unlimited) | 4 | EAR99 | RoHS Compliant | No | 4 | TO-261-4, TO-261AA | Surface Mount | 150°C TJ | DUAL | GULL WING | PZTA42 | 1.5W | 1.5W | 1 | SINGLE | COLLECTOR | NPN | 500mA | 300V | 300V | SILICON | NPN | 70MHz | 100nA ICBO | 300V | 40 | 40 @ 30mA 10V | 500mV @ 2mA, 20mA | 70MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BCX5516E6433HTMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2008 | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | No | 4 | TO-243AA | 100MHz | Surface Mount | 150°C TJ | SINGLE | FLAT | BCX55 | R-PSSO-F3 | 2W | 1 | SINGLE | COLLECTOR | NPN | 2W | 1A | 60V | 60V | AMPLIFIER | SILICON | NPN | 100MHz | 100nA ICBO | 1A | 60V | 5V | 100 @ 150mA 2V | 500mV @ 50mA, 500mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BCP5610E6327HTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2011 | Obsolete | 1 (Unlimited) | EAR99 | RoHS Compliant | No | 4 | TO-261-4, TO-261AA | 100MHz | Surface Mount | 150°C TJ | BCP56 | 2W | 1 | 2W | 1A | 80V | 500mV | NPN | 100nA ICBO | 1A | 100V | 5V | 63 @ 150mA 2V | 500mV @ 50mA, 500mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFN39H6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 6 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | Discontinued | 1 (Unlimited) | 4 | EAR99 | ROHS3 Compliant | Tin | 4 | TO-261-4, TO-261AA | Surface Mount | 150°C TJ | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1.5W | 1.5W | 1 | SINGLE | COLLECTOR | PNP | 200mA | 300V | 10V | SWITCHING | SILICON | PNP | 100MHz | 100nA ICBO | 300V | 30 | 30 @ 30mA 10V | 500mV @ 2mA, 20mA | 100MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BCX 54-16 E6327 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2001 | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | TO-243AA | compliant | Surface Mount | 150°C TJ | SINGLE | FLAT | NOT SPECIFIED | NOT SPECIFIED | BCX54 | YES | R-PSSO-F3 | Other Transistors | 2W | AEC-Q101 | 1 | SINGLE | COLLECTOR | NPN | 2W | AMPLIFIER | SILICON | NPN | 100MHz | 100nA ICBO | 45V | 1A | 100 @ 150mA 2V | 500mV @ 50mA, 500mA | 100MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC 856B E6327 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2011 | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | TO-236-3, SC-59, SOT-23-3 | compliant | Surface Mount | 150°C TJ | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 40 | BC856 | YES | R-PDSO-G3 | Other Transistors | Not Qualified | 330mW | 1 | SINGLE | PNP | 0.33W | SWITCHING | SILICON | PNP | 250MHz | 15nA ICBO | 65V | 100mA | 220 @ 2mA 5V | 650mV @ 5mA, 100mA | 250MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC 817-40 E6327 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2011 | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | TO-236-3, SC-59, SOT-23-3 | compliant | Surface Mount | 150°C TJ | DUAL | GULL WING | 260 | 40 | BC817 | YES | R-PDSO-G3 | Other Transistors | Not Qualified | 330mW | 1 | SINGLE | NPN | 0.33W | SILICON | NPN | 170MHz | 100nA ICBO | 45V | 500mA | 250 @ 100mA 1V | 700mV @ 50mA, 500mA | 170MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPG16N10S461ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | Automotive, AEC-Q101, OptiMOS™ | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerVDFN | not_compliant | Surface Mount | -55°C~175°C TJ | ENHANCEMENT MODE | e3 | Tin (Sn) | FLAT | 8 | R-PDSO-F6 | 29W | 29W | 2 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | Halogen Free | 3 ns | 100V | 16A | 0.061Ohm | METAL-OXIDE SEMICONDUCTOR | 5 ns | SILICON | 2 N-Channel (Dual) | 61m Ω @ 16A, 10V | 3.5V @ 9μA | 490pF @ 25V | 7nC @ 10V | 1ns | 20V | Standard | 64A | 33 mJ | 20 pF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FF23MR12W1M1B11BOMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Tray | 2008 | CoolSiC™+ | Active | Not Applicable | EAR99 | ROHS3 Compliant | Module | 12.35mm | Chassis Mount | -40°C~150°C TJ | AG-EASY1BM-2 | 2 | 20mW | 12 ns | 50A | 150°C | 43.5 ns | 2 N-Channel (Dual) | 23m Ω @ 50A, 15V | 5.55V @ 20mA | 3950pF @ 800V | 125nC @ 15V | Silicon Carbide (SiC) | 1200V 1.2kV | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFI4019H-117P | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2006 | Active | 1 (Unlimited) | 5 | EAR99 | 10.6172mm | ROHS3 Compliant | Lead Free | No | 5 | TO-220-5 Full Pack | No SVHC | 9.02mm | 4.826mm | 95MOhm | Through Hole | -55°C~150°C TJ | ENHANCEMENT MODE | SINGLE | FET General Purpose Power | 18W | 2 | Dual | 18W | 7 ns | 4.9V | 86 ns | 8.7A | AMPLIFIER | METAL-OXIDE SEMICONDUCTOR | 13 ns | SILICON | 2 N-Channel (Dual) | 95m Ω @ 5.2A, 10V | 4.9V @ 50μA | 810pF @ 25V | 20nC @ 10V | 6.6ns | 3.1 ns | 20V | 150V | Standard | 4.9 V | 150V | 34A | 77 mJ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSL308PEH6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | Automotive, AEC-Q101, OptiMOS™ | yes | Active | 1 (Unlimited) | 6 | 2.9mm | ROHS3 Compliant | Lead Free | 6 | SOT-23-6 Thin, TSOT-23-6 | 1mm | 1.6mm | Surface Mount | -55°C~150°C TJ | ENHANCEMENT MODE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 500mW | 2 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | Halogen Free | 5.6 ns | -30V | 2A | 0.08Ohm | METAL-OXIDE SEMICONDUCTOR | 15.3 ns | SILICON | 2 P-Channel (Dual) | 80m Ω @ 2A, 10V | 1V @ 11μA | 500pF @ 15V | 5nC @ 10V | 7.7ns | 2.8 ns | 20V | Logic Level Gate, 4.5V Drive | 2A | 30V | 18 pF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF7507TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 1998 | HEXFET® | Active | 1 (Unlimited) | 8 | EAR99 | 3mm | ROHS3 Compliant | Lead Free | No | 8 | ULTRA LOW RESISTANCE | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | No SVHC | 860μm | 3mm | 270mOhm | Surface Mount | -55°C~150°C TJ | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 40 | IRF7507PBF | 1.25W | 2 | N-CHANNEL AND P-CHANNEL | 1.25W | 700mV | 2.4A | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 38 ns | SILICON | N and P-Channel | 140m Ω @ 1.7A, 4.5V | 700mV @ 250μA | 260pF @ 15V | 8nC @ 4.5V | 12V | 20V | Logic Level Gate | 700 mV | 2.4A 1.7A | 19A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF7307TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 1997 | HEXFET® | Active | 1 (Unlimited) | 8 | EAR99 | 4.9784mm | ROHS3 Compliant | Lead Free | 5.2A | No | 8 | ULTRA LOW RESISTANCE | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.4986mm | 3.9878mm | 50mOhm | Surface Mount | -55°C~150°C TJ | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | IRF7307PBF | 2W | 2 | N-CHANNEL AND P-CHANNEL | 2W | 700mV | 5.2A | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 51 ns | SILICON | N and P-Channel | 50m Ω @ 2.6A, 4.5V | 700mV @ 250μA | 660pF @ 15V | 20nC @ 4.5V | 26ns | 33 ns | 12V | 20V | Logic Level Gate | 700 mV | 5.2A 4.3A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFI4020H-117P | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2006 | Active | 1 (Unlimited) | 5 | EAR99 | 10.6172mm | ROHS3 Compliant | Lead Free | No | 5 | TO-220-5 Full Pack | No SVHC | 9.02mm | 4.826mm | 100MOhm | Through Hole | -55°C~150°C TJ | ENHANCEMENT MODE | SINGLE | FET General Purpose Power | 21W | 2 | DRAIN | Dual | 21W | 8.4 ns | 4.9V | 110 ns | 9.1A | AMPLIFIER | METAL-OXIDE SEMICONDUCTOR | 18 ns | SILICON | 2 N-Channel (Dual) | 100m Ω @ 5.5A, 10V | 4.9V @ 100μA | 1240pF @ 25V | 29nC @ 10V | 8ns | 4 ns | 20V | 200V | Standard | 4.9 V | 200V | 36A | 130 mJ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFH4253DTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | HEXFET® | Not For New Designs | 1 (Unlimited) | EAR99 | 6mm | ROHS3 Compliant | Lead Free | No | 8 | 8-PowerVDFN | No SVHC | 900μm | 5mm | Surface Mount | -55°C~150°C TJ | FET General Purpose Power | 50W | 31W 50W | 2 | Dual | 1.6V | 145A | METAL-OXIDE SEMICONDUCTOR | 2 N-Channel (Dual) | 3.2m Ω @ 30A, 10V | 2.1V @ 35μA | 1314pF @ 13V | 15nC @ 4.5V | 20V | Logic Level Gate | 35A | 64A 145A | 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSD235NH6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | yes | Active | 1 (Unlimited) | 6 | EAR99 | 2mm | ROHS3 Compliant | Lead Free | No | 6 | AVALANCHE RATED | 6-VSSOP, SC-88, SOT-363 | 1mm | 1.25mm | Surface Mount | -55°C~150°C TJ | ENHANCEMENT MODE | e3 | Tin (Sn) | GULL WING | BSD235 | 500mW | AEC-Q101 | 2 | Halogen Free | 500mW | 3.8 ns | 700mV | 20V | 950mA | 150°C | 0.35Ohm | METAL-OXIDE SEMICONDUCTOR | 4.5 ns | SILICON | 2 N-Channel (Dual) | 350m Ω @ 950mA, 4.5V | 1.2V @ 1.6μA | 63pF @ 10V | 0.32nC @ 4.5V | 3.6ns | 12V | 20V | Logic Level Gate | 0.95A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB015N04NGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | no | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 250W | 40 ns | 40V | 250W Tc | 120A | SWITCHING | 64 ns | SILICON | N-Channel | 1.5m Ω @ 100A, 10V | 4V @ 200μA | 20000pF @ 20V | 250nC @ 10V | 10ns | 13 ns | 20V | 120A Tc | 400A | 865 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRL7472L1TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | StrongIRFET™ | Active | 1 (Unlimited) | 9 | EAR99 | 9.15mm | ROHS3 Compliant | Lead Free | 2 | DirectFET™ Isometric L8 | No SVHC | 740μm | 7.1mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | BOTTOM | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | R-XBCC-N9 | 1 | 1 | DRAIN | Single | 3.8W | 68 ns | 1V | 3.8W Ta 341W Tc | 68A | 175°C | SWITCHING | 0.00045Ohm | 174 ns | SILICON | N-Channel | 0.59m Ω @ 195A, 10V | 2.5V @ 250μA | 20082pF @ 25V | 330nC @ 4.5V | 20V | 40V | 375A Tc | 765 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF4905PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 1997 | HEXFET® | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 10.5156mm | ROHS3 Compliant | Contains Lead, Lead Free | -74A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-220-3 | No SVHC | 2.54mm | 19.8mm | 4.69mm | Through Hole | -55°C~175°C TJ | -55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 250 | 30 | 1 | Other Transistors | 1 | TO-220AB | DRAIN | Single | 200W | 18 ns | -4V | 200W Tc | 130 ns | -74A | 175°C | SWITCHING | 0.02Ohm | 61 ns | SILICON | P-Channel | 20m Ω @ 38A, 10V | 4V @ 250μA | 3400pF @ 25V | 180nC @ 10V | 99ns | 96 ns | 20V | -55V | -55V | -4 V | 64A | 74A Tc | 55V | 260A | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
IRL2910PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 1998 | HEXFET® | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 10.5156mm | ROHS3 Compliant | Contains Lead, Lead Free | Tin | 55A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-220-3 | No SVHC | 2.54mm | 8.77mm | 4.69mm | Through Hole | -55°C~175°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 200W | 11 ns | 2V | 200W Tc | 350 ns | 55A | SWITCHING | 49 ns | SILICON | N-Channel | 26m Ω @ 29A, 10V | 2V @ 250μA | 3700pF @ 25V | 140nC @ 5V | 100ns | 55 ns | 16V | 100V | 100V | 2 V | 48A | 55A Tc | 520 mJ | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||
IRF5210PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 1998 | HEXFET® | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 10.5156mm | ROHS3 Compliant | Lead Free | Tin | -40A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | TO-220-3 | No SVHC | 2.54mm | 19.8mm | 4.69mm | 60mOhm | Through Hole | -55°C~175°C TJ | -100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | 250 | 30 | 1 | Other Transistors | 1 | TO-220AB | DRAIN | Single | 200W | 17 ns | -4V | 200W Tc | 260 ns | -40A | 175°C | SWITCHING | 79 ns | SILICON | P-Channel | 60m Ω @ 24A, 10V | 4V @ 250μA | 2700pF @ 25V | 180nC @ 10V | 86ns | 81 ns | 20V | -100V | -100V | -4 V | 40A Tc | 100V | 780 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
IRLS3036TRL7PP | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | HEXFET® | yes | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | Lead Free | 7 | LOGIC LEVEL COMPATIBLE | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 1.9MOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G6 | 1 | DRAIN | Single | 380W | 380W Tc | 240A | SWITCHING | SILICON | N-Channel | 1.9m Ω @ 180A, 10V | 2.5V @ 250μA | 11270pF @ 50V | 160nC @ 4.5V | 540ns | 170 ns | 60V | 240A Tc | 1000A | 300 mJ | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF2907ZPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2010 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | 75A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-220-3 | No SVHC | 9.017mm | 4.826mm | 4.5MOhm | Through Hole | -55°C~175°C TJ | 75V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 330W | 19 ns | 4V | 300W Tc | 75A | SWITCHING | 97 ns | SILICON | N-Channel | 4.5m Ω @ 75A, 10V | 4V @ 250μA | 7500pF @ 25V | 270nC @ 10V | 140ns | 100 ns | 20V | 75V | 75V | 4 V | 160A Tc | 680A | 690 mJ | 10V | ±20V |
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