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Infineon Technologies(12661)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Operating Temperature (Min) | Number of Channels | Subcategory | Qualification Status | Reference Standard | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Polarity/Channel Type | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Continuous Drain Current (ID) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | FET Technology | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IPB60R160P6ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | CoolMOS™ P6 | yes | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 600V | 176W Tc | 23.8A | SWITCHING | 0.16Ohm | SILICON | N-Channel | 160m Ω @ 9A, 10V | 4.5V @ 750μA | 2080pF @ 100V | 44nC @ 10V | 23.8A Tc | 68A | 497 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IPA60R299CPXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tube | 2008 | CoolMOS™ | yes | Not For New Designs | 1 (Unlimited) | 3 | ROHS3 Compliant | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | 33W Tc | SWITCHING | 0.299Ohm | 600V | SILICON | N-Channel | 299m Ω @ 6.6A, 10V | 3.5V @ 440μA | 1100pF @ 100V | 29nC @ 10V | 11A | 11A Tc | 600V | 34A | 290 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IPB100N04S2L03ATMA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 31 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | OptiMOS™ | yes | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | AVALANCHE RATED | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | DRAIN | Halogen Free | Single | 300W | 19 ns | 40V | 300W Tc | 100A | 77 ns | SILICON | N-Channel | 3m Ω @ 80A, 10V | 2V @ 250μA | 6000pF @ 25V | 230nC @ 10V | 51ns | 27 ns | 20V | 40V | 100A Tc | 400A | 810 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPB80N04S204ATMA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | OptiMOS™ | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | No | 3 | AVALANCHE RATED | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 26 ns | 40V | 300W Tc | 80A | 56 ns | SILICON | N-Channel | 3.4m Ω @ 80A, 10V | 4V @ 250μA | 5300pF @ 25V | 170nC @ 10V | 45ns | 32 ns | 20V | 80A Tc | 810 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IPB120N06S4H1ATMA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | Automotive, AEC-Q101, OptiMOS™ | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | 3 | GREEN | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | 260 | NOT SPECIFIED | R-PSSO-G2 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 30 ns | 60V | 250W Tc | 120A | 60 ns | SILICON | N-Channel | 2.4m Ω @ 100A, 10V | 4V @ 200μA | 21900pF @ 25V | 270nC @ 10V | 5ns | 15 ns | 20V | 60V | 120A Tc | 480A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IPB80N08S207ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | OptiMOS™ | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 26 ns | 75V | 300W Tc | 80A | 0.0071Ohm | 61 ns | SILICON | N-Channel | 7.1m Ω @ 80A, 10V | 4V @ 250μA | 4700pF @ 25V | 180nC @ 10V | 50ns | 30 ns | 20V | 80A Tc | 810 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| AUIRF3710ZSTRL | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.826mm | 9.65mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-XSSO-G2 | FET General Purpose Power | 1 | Single | 160W | 17 ns | 160W Tc | 59A | SWITCHING | 0.018Ohm | 41 ns | SILICON | N-Channel | 18m Ω @ 35A, 10V | 4V @ 250μA | 2900pF @ 25V | 120nC @ 10V | 77ns | 56 ns | 20V | 100V | 59A Tc | 240A | 200 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| AUIRL1404ZL | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Through Hole | Tube | 2005 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | No | 3 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | TO-262-3 Long Leads, I2Pak, TO-262AA | No SVHC | 9.65mm | 4.83mm | 5.9MOhm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | FET General Purpose Power | 1 | DRAIN | Single | 200W | 19 ns | 1.4V | 200W Tc | 160A | SWITCHING | 30 ns | SILICON | N-Channel | 3.1m Ω @ 75A, 10V | 2.7V @ 250μA | 5080pF @ 25V | 110nC @ 5V | 180ns | 49 ns | 16V | 40V | 160A Tc | 790A | 490 mJ | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||
| IRF7748L1TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | No | 13 | DirectFET™ Isometric L6 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | FET General Purpose Power | 1 | Single | 3.3W | 19 ns | 3.3W Ta 94W Tc | 148A | 54 ns | N-Channel | 2.2m Ω @ 89A, 10V | 4V @ 250μA | 8075pF @ 50V | 220nC @ 10V | 104ns | 77 ns | 20V | 28A Ta 148A Tc | 60V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFU540Z | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2013 | HEXFET® | Not For New Designs | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | Lead Free | No | 3 | TO-251-3 Short Leads, IPak, TO-251AA | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | 1 | 91W | 14 ns | 22.5mOhm | I-PAK | 91W Tc | 35A | 43 ns | N-Channel | 28.5mOhm @ 21A, 10V | 4V @ 50μA | 1690pF @ 25V | 59nC @ 10V | 42ns | 34 ns | 20V | 100V | 35A Tc | 100V | 1.69nF | 10V | ±20V | 28.5 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD65R420CFDATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | CoolMOS™ | Active | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | Lead Free | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 83.3W | 10 ns | 650V | PG-TO252-3 | 83.3W Tc | 8.7A | 38 ns | N-Channel | 420mOhm @ 3.4A, 10V | 4.5V @ 300μA | 870pF @ 100V | 31.5nC @ 10V | 7ns | 8 ns | 20V | 8.7A Tc | 650V | 870pF | 10V | ±20V | 420 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD65R420CFDBTMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2012 | CoolMOS™ | no | Last Time Buy | 1 (Unlimited) | 2 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | YES | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | 83.3W Tc | SWITCHING | 0.42Ohm | 650V | SILICON | N-Channel | 420m Ω @ 3.4A, 10V | 4.5V @ 340μA | 870pF @ 100V | 32nC @ 10V | 8.7A | 8.7A Tc | 650V | 27A | 227 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFR2905ZTRL | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | ULTRA LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | AEC-Q101 | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 110W | 110W Tc | 42A | SWITCHING | 0.0145Ohm | SILICON | N-Channel | 14.5m Ω @ 36A, 10V | 4V @ 250μA | 1380pF @ 25V | 44nC @ 10V | 66ns | 35 ns | 55V | 42A Tc | 240A | 55 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRF6711STRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | HEXFET® | Active | 1 (Unlimited) | 4 | EAR99 | 4.826mm | ROHS3 Compliant | No | 5 | DirectFET™ Isometric SQ | 506μm | 3.95mm | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | BOTTOM | R-XBCC-N4 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 42W | 7.7 ns | 2.2W Ta 42W Tc | 19A | SWITCHING | 0.0038Ohm | 7.1 ns | SILICON | N-Channel | 3.8m Ω @ 19A, 10V | 2.35V @ 25μA | 1810pF @ 13V | 20nC @ 4.5V | 13ns | 5.4 ns | 20V | 25V | 84A | 19A Ta 84A Tc | 62 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SPD06N60C3ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | CoolMOS™ | Not For New Designs | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | Lead Free | 6.2A | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~150°C TJ | 650V | MOSFET (Metal Oxide) | 74W | 7 ns | 600V | 680mOhm | PG-TO252-3-1 | 74W Tc | 6.2A | 52 ns | N-Channel | 750mOhm @ 3.9A, 10V | 3.9V @ 260μA | 620pF @ 25V | 31nC @ 10V | 12ns | 10 ns | 20V | 6.2A Tc | 600V | 620pF | 10V | ±20V | 750 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP80N06S407AKSA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Through Hole | Tube | 2006 | Automotive, AEC-Q101, OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | 3 | TO-220-3 | not_compliant | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | DRAIN | 15 ns | 60V | 79W Tc | 80A | 0.0071Ohm | 23 ns | SILICON | N-Channel | 7.4m Ω @ 80A, 10V | 4V @ 40μA | 4500pF @ 25V | 56nC @ 10V | 3ns | 5 ns | 20V | 80A Tc | 71 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IPA180N10N3GXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2008 | OptiMOS™ | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 Full Pack | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | Halogen Free | 30W | 11 ns | 100V | 30W Tc | 28A | SWITCHING | 18 ns | SILICON | N-Channel | 18m Ω @ 28A, 10V | 3.5V @ 35μA | 1800pF @ 50V | 25nC @ 10V | 5ns | 3 ns | 20V | 28A Tc | 59 mJ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IPA60R600C6XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tube | 2008 | CoolMOS™ | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | 28W Tc | SWITCHING | 0.6Ohm | 600V | SILICON | N-Channel | 600m Ω @ 2.4A, 10V | 3.5V @ 200μA | 440pF @ 100V | 20.5nC @ 10V | 7.3A | 7.3A Tc | 600V | 19A | 133 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IPB70N10S3L12ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | 2012 | OptiMOS™ | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | LOGIC LEVEL COMPATIBLE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G2 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 125W Tc | 0.012Ohm | 100V | SILICON | N-Channel | 11.8m Ω @ 70A, 10V | 2.4V @ 83μA | 5550pF @ 25V | 80nC @ 10V | 70A | 70A Tc | 100V | 280A | 154 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPI530N15N3GXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 52 Weeks | Through Hole | Tube | 2008 | OptiMOS™ | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | 10.36mm | ROHS3 Compliant | Lead Free | 3 | TO-262-3 Long Leads, I2Pak, TO-262AA | 9.45mm | 4.52mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | Halogen Free | Single | 9 ns | 150V | 68W Tc | 21A | SWITCHING | 133 ns | SILICON | N-Channel | 53m Ω @ 18A, 10V | 4V @ 35μA | 887pF @ 75V | 12nC @ 10V | 20V | 150V | 21A Tc | 84A | 60 mJ | 8V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRF6797MTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 6.35mm | ROHS3 Compliant | No | 7 | LOW CONDUCTION LOSS | DirectFET™ Isometric MX | 506μm | 5.05mm | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | R-XBCC-N3 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 89W | 22 ns | 2.8W Ta 89W Tc | 36A | SWITCHING | 20 ns | SILICON | N-Channel | 1.4m Ω @ 38A, 10V | 2.35V @ 150μA | 5790pF @ 13V | 68nC @ 4.5V | 32ns | 15 ns | 20V | 25V | 36A Ta 210A Tc | 300A | 260 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IPB50N12S3L15ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | 2016 | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | not_compliant | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G2 | -55°C | AEC-Q101 | 1 | SINGLE WITH BUILT-IN DIODE | TO-263AB | DRAIN | N-CHANNEL | 0.0206Ohm | 120V | METAL-OXIDE SEMICONDUCTOR | SILICON | 50A | 200A | 330 mJ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFR8403TRL | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Tape & Reel (TR) | 2010 | HEXFET® | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | IRFR8403 | YES | FET General Purpose Power | Single | 99W Tc | N-Channel | 3.1m Ω @ 76A, 10V | 3.9V @ 100μA | 3171pF @ 25V | 99nC @ 10V | 100A | 100A Tc | 40V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB80N06S2L11ATMA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | OptiMOS™ | yes | Active | 1 (Unlimited) | 2 | EAR99 | 10mm | ROHS3 Compliant | Contains Lead | 3 | LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | 4.4mm | 9.25mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | DRAIN | Halogen Free | Single | 158W | 11 ns | 55V | 158W Tc | 80A | 0.0147Ohm | 46 ns | SILICON | N-Channel | 10.7m Ω @ 40A, 10V | 2V @ 93μA | 2075pF @ 25V | 80nC @ 10V | 32ns | 13 ns | 20V | 55V | 80A Tc | 280 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IPP50R520CPXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2008 | CoolMOS™ | yes | Last Time Buy | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | TO-220AB | ISOLATED | Halogen Free | Single | 66W | 35 ns | 500V | 66W Tc | 7.1A | SWITCHING | 0.52Ohm | 80 ns | SILICON | N-Channel | 520m Ω @ 3.8A, 10V | 3.5V @ 250μA | 680pF @ 100V | 17nC @ 10V | 14ns | 17 ns | 20V | 550V | 7.1A Tc | 15A | 166 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRL2203NSPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 2004 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.8W Ta 180W Tc | SWITCHING | 0.007Ohm | 30V | SILICON | N-Channel | 7m Ω @ 60A, 10V | 3V @ 250μA | 3290pF @ 25V | 60nC @ 4.5V | 75A | 116A Tc | 30V | 400A | 290 mJ | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRF2807SPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 2002 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 230W Tc | SWITCHING | 0.013Ohm | 75V | SILICON | N-Channel | 13m Ω @ 43A, 10V | 4V @ 250μA | 3820pF @ 25V | 160nC @ 10V | 75A | 82A Tc | 75V | 280A | 340 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRF3710SPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 52 Weeks | Tube | 2005 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 200W Tc | SWITCHING | 0.023Ohm | 100V | SILICON | N-Channel | 23m Ω @ 28A, 10V | 4V @ 250μA | 3130pF @ 25V | 130nC @ 10V | 57A | 57A Tc | 100V | 180A | 280 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRFS41N15DPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 2003 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | AVALANCHE RATED | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.1W Ta | SWITCHING | 0.045Ohm | 150V | SILICON | N-Channel | 45m Ω @ 25A, 10V | 5.5V @ 250μA | 2520pF @ 25V | 110nC @ 10V | 41A | 41A Tc | 150V | 164A | 470 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRF1607PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2001 | HEXFET® | Obsolete | 1 (Unlimited) | 3 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | 142A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-220-3 | No SVHC | 16.51mm | 4.826mm | 7.5Ohm | Through Hole | -55°C~175°C TJ | 75V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 380W | 22 ns | 380W Tc | 142A | SWITCHING | 84 ns | SILICON | N-Channel | 7.5m Ω @ 85A, 10V | 4V @ 250μA | 7750pF @ 25V | 320nC @ 10V | 130ns | 86 ns | 20V | 75V | 75V | 4 V | 75A | 142A Tc | 570A | 10V | ±20V |