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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
    IRFR4105TRPBF IRFR4105TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount, Through Hole Tape & Reel (TR) 2005 HEXFET® Active 1 (Unlimited) 2 SMD/SMT EAR99 6.7056mm ROHS3 Compliant Contains Lead, Lead Free 25A No 3 AVALANCHE RATED, ULTRA-LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.3876mm 2.38mm 45mOhm Surface Mount -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 48W 7 ns 4V 68W Tc 86 ns 27A SWITCHING 31 ns SILICON N-Channel 45m Ω @ 16A, 10V 4V @ 250μA 700pF @ 25V 34nC @ 10V 49ns 40 ns 20V 55V 55V 4 V 20A 27A Tc 65 mJ 10V ±20V
    IRFR4105ZTRPBF IRFR4105ZTRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2003 HEXFET® Active 1 (Unlimited) 2 SMD/SMT EAR99 6.7056mm ROHS3 Compliant Contains Lead, Lead Free 30A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 1.778mm 6.22mm 24.5MOhm Surface Mount -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 48W 10 ns 4V 48W Tc 29 ns 30A SWITCHING 26 ns SILICON N-Channel 24.5m Ω @ 18A, 10V 4V @ 250μA 740pF @ 25V 27nC @ 10V 40ns 24 ns 20V 55V 55V 4 V 30A Tc 29 mJ 10V ±20V
    IRF7241TRPBF IRF7241TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2004 HEXFET® Active 1 (Unlimited) 8 EAR99 4.9784mm ROHS3 Compliant Contains Lead, Lead Free -6.2A No 8 HIGH RELIABILITY 8-SOIC (0.154, 3.90mm Width) No SVHC 1.4986mm 3.9878mm 41MOhm Surface Mount -55°C~150°C TJ -40V MOSFET (Metal Oxide) e3 Matte Tin (Sn) DUAL GULL WING 260 30 Other Transistors 1 Single 2.5W 24 ns -3V 2.5W Ta 48 ns -6.2A SWITCHING 210 ns SILICON P-Channel 41m Ω @ 6.2A, 10V 3V @ 250μA 3220pF @ 25V 80nC @ 10V 280ns 100 ns 20V -40V -40V -3 V 6.2A Ta 40V 4.5V 10V ±20V
    IPP320N20N3GXKSA1 IPP320N20N3GXKSA1 Infineon Technologies $0.00
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    		 download 13 Weeks Through Hole Tube 2008 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 136W 11 ns 200V 136W Tc 34A SWITCHING 21 ns SILICON N-Channel 32m Ω @ 34A, 10V 4V @ 90μA 2350pF @ 100V 29nC @ 10V 9ns 4 ns 20V 34A Tc 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2003 HEXFET® Active 1 (Unlimited) 3 EAR99 15.87mm ROHS3 Compliant Lead Free No 3 TO-247-3 No SVHC 20.7mm 5.3086mm 1.7MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-247AC DRAIN Single 380W 59 ns 4V 380W Tc 130 ns 350A SWITCHING 160 ns SILICON N-Channel 1.7m Ω @ 195A, 10V 4V @ 250μA 8920pF @ 25V 330nC @ 10V 370ns 190 ns 20V 40V 195A Tc 290 mJ 10V ±20V
    IRFP4229PBF IRFP4229PBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2006 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 15.87mm ROHS3 Compliant Lead Free No 3 TO-247-3 No SVHC 20.7mm 5.3086mm 46MOhm Through Hole -40°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-247AC DRAIN Single 310mW 25 ns 5V 310W Tc 290 ns 44A SWITCHING 44 ns SILICON N-Channel 46m Ω @ 26A, 10V 5V @ 250μA 4560pF @ 25V 110nC @ 10V 27ns 19 ns 30V 250V 250V 5 V 44A Tc 10V ±30V
    IPP030N10N5AKSA1 IPP030N10N5AKSA1 Infineon Technologies $0.00
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    		 download 13 Weeks Through Hole Tube 2013 OptiMOS™ yes Active 1 (Unlimited) 3 ROHS3 Compliant Contains Lead TO-220-3 Through Hole 6.000006g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED R-PSFM-T3 1 1 TO-220AB DRAIN Halogen Free Single 25 ns 100V 250W Tc 120A SWITCHING 0.003Ohm 52 ns SILICON N-Channel 3m Ω @ 100A, 10V 3.8V @ 184μA 10300pF @ 50V 139nC @ 10V 15ns 17 ns 20V 100V 120A Tc 480A 6V 10V ±20V
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    		 download 13 Weeks Tube 2008 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB 214W Tc SWITCHING 0.0111Ohm 150V SILICON N-Channel 11.1m Ω @ 83A, 10V 4V @ 160μA 3230pF @ 75V 55nC @ 10V 83A 83A Tc 150V 332A 330 mJ 8V 10V ±20V
    IRLP3034PBF IRLP3034PBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2009 HEXFET® Active 1 (Unlimited) 3 EAR99 15.87mm ROHS3 Compliant No 3 TO-247-3 No SVHC 20.7mm 5.3086mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 1 TO-247AC DRAIN Single 341W 65 ns 2.5V 341W Tc 327A SWITCHING 0.0017Ohm 97 ns SILICON N-Channel 1.7m Ω @ 195A, 10V 2.5V @ 250μA 10315pF @ 25V 162nC @ 4.5V 827ns 355 ns 20V 40V 195A 195A Tc 224 mJ 4.5V 10V ±20V
    BUZ31HXKSA1 BUZ31HXKSA1 Infineon Technologies $0.00
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    		 download Through Hole Tube 2005 SIPMOS® yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant No AVALANCHE RATED TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE 3 R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-220AB 95W 12 ns 95W Tc 14.5A 0.2Ohm 200V 150 ns SILICON N-Channel 200m Ω @ 9A, 5V 4V @ 1mA 1120pF @ 25V 50ns 60 ns 20V 14.5A Tc 200V 58A 200 mJ 5V ±20V
    IPI50R299CPXKSA1 IPI50R299CPXKSA1 Infineon Technologies $0.00
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    		 download 8 Weeks Tube 2008 CoolMOS™ yes Obsolete 1 (Unlimited) 3 RoHS Compliant 3 TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED 3 NO Not Qualified 1 Halogen Free Single 104W 104W Tc 12A SWITCHING 0.299Ohm 80 ns SILICON N-Channel 299m Ω @ 6.6A, 10V 3.5V @ 440μA 1190pF @ 100V 31nC @ 10V 14ns 12 ns 20V 550V 12A Tc 500V 26A 289 mJ 10V ±20V
    IPP65R600C6XKSA1 IPP65R600C6XKSA1 Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2008 CoolMOS™ yes Obsolete 1 (Unlimited) 3 RoHS Compliant Lead Free TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 63W 12 ns 650V 63W Tc 7.3A SWITCHING 0.6Ohm 80 ns SILICON N-Channel 600m Ω @ 2.1A, 10V 3.5V @ 210μA 440pF @ 100V 23nC @ 10V 9ns 13 ns 20V 7.3A Tc 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2011 CoolMOS™ yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant Lead Free 3 TO-220-3 Full Pack Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED Halogen Free 34W 13 ns 650V 34W Tc 20.2A SWITCHING 133 ns SILICON N-Channel 190m Ω @ 7.3A, 10V 3.5V @ 730μA 1620pF @ 100V 73nC @ 10V 12ns 10 ns 20V 20.2A Tc 66A 485 mJ 10V ±20V
    IPP120N04S402AKSA1 IPP120N04S402AKSA1 Infineon Technologies $0.00
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    		 download Through Hole Tube 2010 OptiMOS™ Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant Contains Lead 3 TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 27 ns 40V 158W Tc 120A 0.0021Ohm 30 ns SILICON N-Channel 2.1m Ω @ 100A, 10V 4V @ 110μA 10740pF @ 25V 134nC @ 10V 16ns 20V 120A Tc 480A 480 mJ 10V ±20V
    IPP65R280C6XKSA1 IPP65R280C6XKSA1 Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2008 CoolMOS™ yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant Lead Free TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED 3 R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 104W 13 ns 650V 104W Tc 13.8A SWITCHING 0.28Ohm 105 ns SILICON N-Channel 280m Ω @ 4.4A, 10V 3.5V @ 440μA 950pF @ 100V 45nC @ 10V 11ns 12 ns 20V 13.8A Tc 39A 290 mJ 10V ±20V
    IRF9310PBF IRF9310PBF Infineon Technologies $0.00
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    		 download 22 Weeks Surface Mount Tube 2010 HEXFET® Discontinued 1 (Unlimited) 8 EAR99 4.9784mm ROHS3 Compliant Lead Free Tin No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.75mm 3.9878mm 4.6MOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL GULL WING R-PDSO-G3 1 Other Transistors 1 DRAIN Single 2.5W 25 ns -1.8V 2.5W Ta 107 ns -20A 150°C SWITCHING 65 ns SILICON P-Channel 4.6m Ω @ 20A, 10V 2.4V @ 100μA 5250pF @ 15V 165nC @ 10V 47ns 70 ns 20V -30V -1.8 V 20A Tc 30V 630 mJ 4.5V 10V ±20V
    IPD200N15N3GBTMA1 IPD200N15N3GBTMA1 Infineon Technologies $0.00
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    		 download Tape & Reel (TR) 2013 OptiMOS™ no Obsolete 1 (Unlimited) 2 EAR99 RoHS Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 3 YES R-PSSO-G2 FET General Purpose Powers Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 150W Tc SWITCHING 0.02Ohm 150V SILICON N-Channel 20m Ω @ 50A, 10V 4V @ 90μA 1820pF @ 75V 31nC @ 10V 50A 50A Tc 150V 200A 170 mJ 8V 10V ±20V
    BSZ120P03NS3EGATMA1 BSZ120P03NS3EGATMA1 Infineon Technologies $0.00
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    		 download 10 Weeks Surface Mount Tape & Reel (TR) 2009 OptiMOS™ no Obsolete 1 (Unlimited) 5 EAR99 ROHS3 Compliant Contains Lead 8 ESD PROTECTED 8-PowerTDFN not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL NO LEAD NOT SPECIFIED NOT SPECIFIED 8 S-PDSO-N5 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 52W -30V 2.1W Ta 52W Tc 40A SWITCHING 0.02Ohm SILICON P-Channel 12m Ω @ 20A, 10V 3.1V @ 73μA 3360pF @ 15V 45nC @ 10V 11ns 25V 11A Ta 40A Tc 30V 73 mJ 6V 10V ±25V
    IPP80P03P4L07AKSA1 IPP80P03P4L07AKSA1 Infineon Technologies $0.00
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    		 download 14 Weeks Through Hole Tube 2008 OptiMOS™ Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant Contains Lead 3 LOGIC LEVEL COMPATIBLE TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 8 ns -30V 88W Tc 80A SWITCHING 0.0072Ohm 15 ns SILICON P-Channel 7.2m Ω @ 80A, 10V 2V @ 130μA 5700pF @ 25V 80nC @ 10V 4ns 60 ns 5V 80A Tc 30V 4.5V 10V +5V, -16V
    IPP60R520C6XKSA1 IPP60R520C6XKSA1 Infineon Technologies $0.00
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    		 download Through Hole Tube 2011 CoolMOS™ yes Obsolete 1 (Unlimited) 3 RoHS Compliant Lead Free 3 TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 66W 13 ns 600V 66W Tc 8.1A SWITCHING 0.52Ohm 85 ns SILICON N-Channel 520m Ω @ 2.8A, 10V 3.5V @ 230μA 512pF @ 100V 23.4nC @ 10V 10ns 14 ns 20V 8.1A Tc 22A 10V ±20V
    IPP45P03P4L11AKSA1 IPP45P03P4L11AKSA1 Infineon Technologies $0.00
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    		 download 14 Weeks Through Hole Tube 2008 OptiMOS™ Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant Contains Lead 3 LOGIC LEVEL COMPATIBLE TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 7 ns -30V 58W Tc 45A 0.0111Ohm 45 ns SILICON P-Channel 11.1m Ω @ 45A, 10V 2V @ 85μA 3770pF @ 25V 55nC @ 10V 3ns 14 ns 5V 45A Tc 30V 180A 110 mJ 4.5V 10V +5V, -16V
    IRF6201TRPBF IRF6201TRPBF Infineon Technologies $0.00
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    		 download 15 Weeks Surface Mount Tape & Reel (TR) 2009 HEXFET® Obsolete 1 (Unlimited) 8 EAR99 4.9784mm ROHS3 Compliant Lead Free No 8 8-SOIC (0.154, 3.90mm Width) 1.4986mm 3.9878mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING FET General Purpose Power 1 Single 2.5W 29 ns 2.5W Ta 27A SWITCHING 0.00245Ohm 320 ns SILICON N-Channel 2.45m Ω @ 27A, 4.5V 1.1V @ 100μA 8555pF @ 16V 195nC @ 4.5V 100ns 265 ns 12V 20V 27A Ta 2.5V 4.5V ±12V
    IRF7410GTRPBF IRF7410GTRPBF Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2009 HEXFET® Obsolete 1 (Unlimited) 8 EAR99 4.9784mm ROHS3 Compliant No 8 ULTRA LOW RESISTANCE 8-SOIC (0.154, 3.90mm Width) 1.4986mm 3.9878mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 1 Single 2.5W 13 ns 2.5W Ta 16A SWITCHING 0.007Ohm 271 ns SILICON P-Channel 7m Ω @ 16A, 4.5V 900mV @ 250μA 8676pF @ 10V 91nC @ 4.5V 18ns 300 ns 8V -12V 16A Ta 12V 65A 1.8V 4.5V ±8V
    IRFS38N20DPBF IRFS38N20DPBF Infineon Technologies $0.00
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    		 download Tube 2002 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.8W Ta 300W Tc SWITCHING 0.054Ohm 200V SILICON N-Channel 54m Ω @ 26A, 10V 5V @ 250μA 2900pF @ 25V 91nC @ 10V 43A 43A Tc 200V 180A 460 mJ 10V ±20V
    IRFR2607ZPBF IRFR2607ZPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tube 2002 HEXFET® Discontinued 1 (Unlimited) SMD/SMT EAR99 6.7056mm ROHS3 Compliant Contains Lead, Lead Free Tin 42A No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.2606mm 6.22mm 22MOhm Surface Mount -55°C~175°C TJ 75V MOSFET (Metal Oxide) 1 Single 110W 14 ns 4V 110W Tc 42A 39 ns N-Channel 22m Ω @ 30A, 10V 4V @ 50μA 1440pF @ 25V 51nC @ 10V 59ns 28 ns 20V 75V 2 V 42A Tc 10V ±20V
    IPD60R385CPBTMA1 IPD60R385CPBTMA1 Infineon Technologies $0.00
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    		 download Surface Mount Tape & Reel (TR) 2011 OptiMOS™ yes Obsolete 1 (Unlimited) 2 EAR99 RoHS Compliant Lead Free TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) SINGLE GULL WING 260 40 4 R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 83W 10 ns 600V 83W Tc 9A SWITCHING 0.385Ohm 40 ns SILICON N-Channel 385m Ω @ 5.2A, 10V 3.5V @ 340μA 790pF @ 100V 22nC @ 10V 5ns 20V 9A 9A Tc 650V 27A 227 mJ 10V ±20V
    IPW65R310CFDFKSA1 IPW65R310CFDFKSA1 Infineon Technologies $0.00
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    		 download 16 Weeks Through Hole Tube 2008 CoolMOS™ yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant Lead Free 3 TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 1 SINGLE WITH BUILT-IN DIODE 11 ns 650V 104.2W Tc 11.4A SWITCHING 45 ns SILICON N-Channel 310m Ω @ 4.4A, 10V 4.5V @ 440μA 1100pF @ 100V 41nC @ 10V 7.5ns 7 ns 20V 11.4A Tc 290 mJ 10V ±20V
    AUIRFS3004 AUIRFS3004 Infineon Technologies $0.00
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    		 download 16 Weeks Surface Mount Tube 2011 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 10.67mm ROHS3 Compliant Tin No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.83mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 AUIRFS3004 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 380W 23 ns 380W Tc 195A SWITCHING 90 ns SILICON N-Channel 1.75m Ω @ 195A, 10V 4V @ 250μA 9200pF @ 25V 240nC @ 10V 220ns 130 ns 20V 40V 195A Tc 10V ±20V
    AUIRFP1405 AUIRFP1405 Infineon Technologies $0.00
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    		 download 10 Weeks Through Hole Tube 2011 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 15.87mm ROHS3 Compliant No 3 AVALANCHE RATED TO-247-3 No SVHC 20.7mm 5.31mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-247AC DRAIN Single 310W 12 ns 310W Tc 95A SWITCHING 140 ns SILICON N-Channel 5.3m Ω @ 95A, 10V 4V @ 250μA 5600pF @ 25V 180nC @ 10V 160ns 150 ns 20V 55V 95A Tc 640A 10V ±20V
    AUIRLS3036 AUIRLS3036 Infineon Technologies $0.00
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    		 download 39 Weeks Tube 2008 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 380W Tc SWITCHING 0.0024Ohm 60V SILICON N-Channel 2.4m Ω @ 165A, 10V 2.5V @ 250μA 11210pF @ 50V 140nC @ 4.5V 195A 195A Tc 60V 1100A 290 mJ 4.5V 10V ±16V