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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Lead Pitch Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode Manufacturer Package Identifier Current JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Voltage Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Reverse Recovery Time Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Feedback Cap-Max (Crss) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
    IRFP044NPBF IRFP044NPBF Infineon Technologies $0.00
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    		 download 10 Weeks Through Hole Bulk 1997 HEXFET® Not For New Designs 1 (Unlimited) 3 EAR99 15.87mm ROHS3 Compliant Lead Free 53A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-247-3 No SVHC 5.45mm 20.7mm 5.3086mm Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 250 30 1 FET General Purpose Power 1 TO-247AC DRAIN Single 100W 12 ns 4V 120W Tc 110 ns 53A SWITCHING 0.02Ohm 43 ns SILICON N-Channel 20m Ω @ 29A, 10V 4V @ 250μA 1500pF @ 25V 61nC @ 10V 80ns 52 ns 20V 55V 55V 4 V 49A 53A Tc 10V ±20V
    IPB80N08S2L07ATMA1 IPB80N08S2L07ATMA1 Infineon Technologies $0.00
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    		 download 10 Weeks Tape & Reel (TR) 2013 OptiMOS™ Active 1 (Unlimited) EAR99 ROHS3 Compliant Contains Lead 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED Halogen Free 75V 300W Tc N-Channel 6.8m Ω @ 80A, 10V 2V @ 250μA 5400pF @ 25V 233nC @ 10V 80A Tc 4.5V 10V ±20V
    IRF1404ZPBF IRF1404ZPBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2003 HEXFET® Active 1 (Unlimited) 3 EAR99 10.54mm ROHS3 Compliant Lead Free 75A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-220-3 No SVHC 8.77mm 4.69mm 3.7Ohm Through Hole -55°C~175°C TJ 40V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier FET General Purpose Power 1 TO-220AB DRAIN Single 220W 18 ns 4V 200W Tc 42 ns 190A SWITCHING 36 ns SILICON N-Channel 3.7m Ω @ 75A, 10V 4V @ 250μA 4340pF @ 25V 150nC @ 10V 110ns 58 ns 20V 40V 40V 4 V 180A Tc 750A 480 mJ 10V ±20V
    IRF3710ZPBF IRF3710ZPBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2003 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.54mm ROHS3 Compliant Lead Free 59A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-220-3 No SVHC 2.54mm 19.8mm 4.69mm 18MOhm Through Hole -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN OVER NICKEL 250 30 1 FET General Purpose Power 1 TO-220AB DRAIN Single 160W 17 ns 4V 50 ns 160W Tc 75 ns 59A 175°C SWITCHING 41 ns SILICON N-Channel 18m Ω @ 35A, 10V 4V @ 250μA 2900pF @ 25V 120nC @ 10V 77ns 56 ns 20V 100V 100V 4 V 59A Tc 240A 200 mJ 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2007 HEXFET®, StrongIRFET™ Active 1 (Unlimited) EAR99 10.67mm ROHS3 Compliant Lead Free 7 TO-263-7, D2Pak (6 Leads + Tab) No SVHC 5.084mm 9.65mm Surface Mount 1.59999g -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 1 FET General Purpose Power Single 375W 28 ns 2.2V 375W Tc 240A 175°C 161 ns N-Channel 0.75m Ω @ 100A, 10V 3.9V @ 250μA 13975pF @ 25V 460nC @ 10V 79ns 93 ns 20V 40V 522A 240A Tc 6V 10V ±20V
    IPA60R180P7SXKSA1 IPA60R180P7SXKSA1 Infineon Technologies $0.00
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    		 download 18 Weeks Tube 2014 CoolMOS™ P7 Active Not Applicable 3 EAR99 ROHS3 Compliant TO-220-3 Full Pack Through Hole -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED 26W Tc SWITCHING 0.18Ohm 600V SILICON N-Channel 180m Ω @ 5.6A, 10V 4V @ 280μA 1081pF @ 400V 25nC @ 10V 18A Tc 600V 53A 56 mJ 10V ±20V
    IRLS3034TRL7PP IRLS3034TRL7PP Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 HEXFET® yes Active 1 (Unlimited) 6 EAR99 175°C -55°C ROHS3 Compliant No 7 TO-263-7, D2Pak (6 Leads + Tab), TO-263CB Surface Mount MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING R-PSSO-G6 1 SINGLE WITH BUILT-IN DIODE DRAIN 380W 71 ns 380W Tc 240A SWITCHING 0.0014Ohm 94 ns N-Channel 1.4m Ω @ 200A, 10V 2.5V @ 250μA 10990pF @ 40V 180nC @ 4.5V 590ns 200 ns 20V 40V 240A Tc 1540A 250 mJ 4.5V 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2003 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.668mm ROHS3 Compliant Lead Free Tin 162A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-220-3 No SVHC 2.54mm 19.8mm 4.826mm 4mOhm Through Hole -55°C~175°C TJ 40V MOSFET (Metal Oxide) ENHANCEMENT MODE 1 FET General Purpose Power 1 TO-220AB DRAIN Single 333W 17 ns 4V 333W Tc 117 ns 202A 175°C SWITCHING 46 ns SILICON N-Channel 4m Ω @ 121A, 10V 4V @ 250μA 5669pF @ 25V 196nC @ 10V 190ns 33 ns 20V 40V 40V 4 V 75A 202A Tc 808A 620 mJ 10V ±20V
    IPD80R900P7ATMA1 IPD80R900P7ATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Tape & Reel (TR) 2014 CoolMOS™ P7 Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 45W Tc SWITCHING 0.9Ohm 800V SILICON N-Channel 900m Ω @ 2.2A, 10V 3.5V @ 110μA 350pF @ 500V 15nC @ 10V 6A Tc 800V 14A 13 mJ 10V ±20V
    IRFR15N20DTRPBF IRFR15N20DTRPBF Infineon Technologies $0.00
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    		 12 Weeks Surface Mount Tape & Reel (TR) 2005 HEXFET® Active 1 (Unlimited) 2 EAR99 6.7056mm ROHS3 Compliant Lead Free 17A No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.52mm 6.22mm 165Ohm Surface Mount -55°C~175°C TJ 200V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 1 FET General Purpose Power 1 TO-252AA DRAIN Single 3W 9.7 ns 5.5V 3W Ta 140W Tc 17A 175°C SWITCHING 17 ns SILICON N-Channel 165m Ω @ 10A, 10V 5.5V @ 250μA 910pF @ 25V 41nC @ 10V 32ns 8.9 ns 30V 200V 200V 5.5 V 17A Tc 68A 260 mJ 10V ±30V
    IPD036N04LGBTMA1 IPD036N04LGBTMA1 Infineon Technologies $0.00
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    		 download Tape & Reel (TR) 2004 OptiMOS™ no Not For New Designs 1 (Unlimited) 2 EAR99 ROHS3 Compliant LOGIC LEVEL COMPATIBLE TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 YES R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 94W Tc SWITCHING 0.0049Ohm 40V SILICON N-Channel 3.6m Ω @ 90A, 10V 2V @ 45μA 6300pF @ 20V 78nC @ 10V 90A 90A Tc 40V 400A 55 mJ 4.5V 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2012 HEXFET® Active 1 (Unlimited) 8 EAR99 ROHS3 Compliant Lead Free No 8 8-SOIC (0.154, 3.90mm Width) No SVHC Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE 2.5W 7.1 ns 4V 2.5W Ta 3.7A SWITCHING 200V 14 ns SILICON N-Channel 78m Ω @ 2.2A, 10V 5V @ 100μA 1750pF @ 100V 44nC @ 10V 3.2ns 12 ns 20V 4 V 3.7A Ta 200V 10V ±20V
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    		 download 12 Weeks Through Hole Tube 1999 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.5156mm ROHS3 Compliant Lead Free Tin 17A No 3 AVALANCHE RATED TO-220-3 No SVHC 2.54mm 19.8mm 4.69mm 70mOhm Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE 1 FET General Purpose Power 1 TO-220AB DRAIN Single 45W 4.9 ns 2V 45W Tc 17A 175°C SWITCHING 19 ns SILICON N-Channel 70m Ω @ 10A, 10V 4V @ 250μA 370pF @ 25V 20nC @ 10V 34ns 27 ns 20V 55V 55V 4 V 17A Tc 68A 10V ±20V
    BSZ019N03LSATMA1 BSZ019N03LSATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2011 OptiMOS™ no Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Tin 8 8-PowerTDFN No SVHC not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL NO LEAD NOT SPECIFIED NOT SPECIFIED 8 S-PDSO-N3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 69W 2V 2.1W Ta 69W Tc 22A SWITCHING 0.0025Ohm 30V SILICON N-Channel 1.9m Ω @ 20A, 10V 2V @ 250μA 2800pF @ 15V 44nC @ 10V 6.8ns 20V 22A Ta . 40A Tc 30V 4.5V 10V ±20V
    IRF7452TRPBF IRF7452TRPBF Infineon Technologies $0.00
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    		 download 14 Weeks Surface Mount Tape & Reel (TR) 2001 HEXFET® Not For New Designs 1 (Unlimited) 8 EAR99 4.9784mm ROHS3 Compliant Lead Free 4.5A No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.4986mm 3.9878mm Surface Mount -55°C~150°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 1 SINGLE WITH BUILT-IN DIODE 2.5W 9.5 ns 5.5V 2.5W Ta 4.5A SWITCHING 0.06Ohm 16 ns SILICON N-Channel 60m Ω @ 2.7A, 10V 5.5V @ 250μA 930pF @ 25V 50nC @ 10V 11ns 13 ns 30V 100V 5.5 V 4.5A Ta 36A 200 mJ 10V ±30V
    IRFR3411TRPBF IRFR3411TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2004 HEXFET® Active 1 (Unlimited) 2 EAR99 6.7056mm ROHS3 Compliant Lead Free 32A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.26mm 6.22mm 44MOhm Surface Mount -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 130W 11 ns 4V 130W Tc 170 ns 32A SWITCHING 39 ns SILICON N-Channel 44m Ω @ 16A, 10V 4V @ 250μA 1960pF @ 25V 71nC @ 10V 35ns 35 ns 20V 100V 4 V 32A Tc 10V ±20V
    BSC360N15NS3GATMA1 BSC360N15NS3GATMA1 Infineon Technologies $0.00
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    		 download 26 Weeks Surface Mount Tape & Reel (TR) 2011 OptiMOS™ no Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant Contains Lead Tin 8 8-PowerTDFN No SVHC not_compliant 1.1mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL FLAT NOT SPECIFIED NOT SPECIFIED 8 R-PDSO-F5 1 FET General Purpose Powers Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 74W 9 ns 3V 150V 74W Tc 33A 150°C SWITCHING 0.036Ohm 12 ns SILICON N-Channel 36m Ω @ 25A, 10V 4V @ 45μA 1190pF @ 75V 15nC @ 10V 6ns 20V 150V 33A Tc 8V 10V ±20V
    IPD90R1K2C3ATMA1 IPD90R1K2C3ATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2008 CoolMOS™ Active 1 (Unlimited) 150°C -55°C ROHS3 Compliant Lead Free 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 3.949996g -55°C~150°C TJ MOSFET (Metal Oxide) 1 Single 83W 70 ns 900V 1.2Ohm PG-TO252-3 83W Tc 5.1A 400 ns N-Channel 1.2Ohm @ 2.8A, 10V 3.5V @ 310μA 710pF @ 100V 28nC @ 10V 20ns 40 ns 30V 5.1A Tc 900V 710pF 10V ±20V 1.2 Ω
    IRF7807ZTRPBF IRF7807ZTRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2005 HEXFET® Active 1 (Unlimited) 8 EAR99 4.9784mm ROHS3 Compliant Contains Lead, Lead Free 11A No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.4986mm 3.9878mm 8.2MOhm Surface Mount -55°C~150°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 30 1 SINGLE WITH BUILT-IN DIODE 2.5W 6.9 ns 1.8V 2.5W Ta 11A SWITCHING 10 ns SILICON N-Channel 13.8m Ω @ 11A, 10V 2.25V @ 250μA 770pF @ 15V 11nC @ 4.5V 6.2ns 3.1 ns 20V 30V 1.8 V 11A Ta 4.5V 10V ±20V
    BSZ100N06NSATMA1 BSZ100N06NSATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2012 OptiMOS™ Active 1 (Unlimited) 150°C -55°C ROHS3 Compliant Contains Lead Tin 8 8-PowerTDFN Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) Halogen Free 60V 8.5mOhm PG-TSDSON-8-FL 2.1W Ta 36W Tc 40A N-Channel 10mOhm @ 20A, 10V 3.3V @ 14μA 1075pF @ 30V 15nC @ 10V 2ns 20V 40A Tc 60V 1.075nF 6V 10V ±20V 10 mΩ
    IRF9328TRPBF IRF9328TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2008 HEXFET® Active 1 (Unlimited) 8 EAR99 4.9784mm ROHS3 Compliant Lead Free No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.75mm 3.9878mm 11.9MOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 1 Other Transistors 1 Single 2.5W 19 ns -1.8V 2.5W Ta -12A 150°C SWITCHING 80 ns SILICON P-Channel 11.9m Ω @ 12A, 10V 2.4V @ 25μA 1680pF @ 25V 52nC @ 10V 57ns 66 ns 20V -30V -1.8 V 12A Tc 30V 96A 4.5V 10V ±20V
    BSP297H6327XTSA1 BSP297H6327XTSA1 Infineon Technologies $0.00
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    		 download 10 Weeks Surface Mount Cut Tape (CT) 2008 SIPMOS® yes Active 1 (Unlimited) 4 SMD/SMT EAR99 6.5mm ROHS3 Compliant Lead Free No 4 LOGIC LEVEL COMPATIBLE TO-261-4, TO-261AA No SVHC 1.6mm 6.7mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 66A e3 Tin (Sn) DUAL GULL WING 4 200V 1 DRAIN Halogen Free Single 1.8W 5.2 ns 1.4V 200V 1.8W Ta 600mA 49 ns SILICON N-Channel 1.8 Ω @ 660mA, 10V 1.8V @ 400μA 357pF @ 25V 16.1nC @ 10V 3.8ns 19 ns 20V 200V 200V 1.4 V 660mA Ta 4.5V 10V ±20V
    BSP129H6327XTSA1 BSP129H6327XTSA1 Infineon Technologies $0.00
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    		 download 10 Weeks Surface Mount Cut Tape (CT) 2012 SIPMOS® yes Active 1 (Unlimited) 4 SMD/SMT EAR99 6.5mm ROHS3 Compliant Lead Free Tin No 4 TO-261-4, TO-261AA No SVHC 1.8mm 3.5mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) PG-SOT223-4 35A e3 DUAL GULL WING 4 1 240V 1 DRAIN Halogen Free Single 1.7W 4.4 ns -2.1V 240V 1.8W Ta 120mA 150°C 20Ohm 22 ns SILICON N-Channel 6 Ω @ 350mA, 10V 1V @ 108μA 108pF @ 25V 5.7nC @ 5V 4.1ns 35 ns 20V 240V 240V Depletion Mode -1.4 V 350mA Ta 0V 10V ±20V
    IRFL4105TRPBF IRFL4105TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 1999 HEXFET® Active 1 (Unlimited) 4 SMD/SMT EAR99 6.6802mm ROHS3 Compliant Contains Lead, Lead Free 3.7A No 3 AVALANCHE RATED, ULTRA LOW RESISTANCE TO-261-4, TO-261AA No SVHC 1.8mm 3.7mm 45mOhm Surface Mount -55°C~150°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING R-PDSO-G4 1 1 DRAIN Single 2.1W 7.1 ns 4V 1W Ta 82 ns 3.7A 150°C SWITCHING 19 ns SILICON N-Channel 45m Ω @ 3.7A, 10V 4V @ 250μA 660pF @ 25V 35nC @ 10V 12ns 12 ns 20V 55V 55V 4 V 3.7A Ta 10V ±20V
    IPN70R1K2P7SATMA1 IPN70R1K2P7SATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Tape & Reel (TR) 2014 CoolMOS™ P7 Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-261-3 1.8mm Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PDSO-G3 1 1 SINGLE WITH BUILT-IN DIODE DRAIN 6.3W 12 ns 6.3W Tc 4.5A 150°C SWITCHING 60 ns SILICON N-Channel 1.2 Ω @ 900mA, 10V 3.5V @ 40μA 174pF @ 400V 4.8nC @ 10V 16V 700V 4.5A Tc 10V ±16V
    BSS169H6906XTSA1 BSS169H6906XTSA1 Infineon Technologies $0.00
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    		 download 10 Weeks Surface Mount Tape & Reel (TR) 2012 SIPMOS™ yes Not For New Designs 1 (Unlimited) 3 EAR99 ROHS3 Compliant Tin 3 TO-236-3, SC-59, SOT-23-3 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) DUAL GULL WING 1 SINGLE WITH BUILT-IN DIODE 360mW Ta 170mA 6Ohm 100V SILICON N-Channel 6 Ω @ 170mA, 10V 1.8V @ 50μA 68pF @ 10V 2.8nC @ 7V 2.7ns 20V Depletion Mode 0.17A 170mA Ta 100V 7 pF 0V 10V ±20V
    IPN80R1K4P7ATMA1 IPN80R1K4P7ATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Tape & Reel (TR) 2014 CoolMOS™ P7 Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-261-3 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PDSO-G3 1 SINGLE WITH BUILT-IN DIODE DRAIN 7W Tc SWITCHING 800V SILICON N-Channel 1.4 Ω @ 1.4A, 10V 3.5V @ 70μA 250pF @ 500V 10nC @ 10V 4A Tc 800V 10V ±20V
    BSZ110N06NS3GATMA1 BSZ110N06NS3GATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2011 OptiMOS™ no Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant Contains Lead 8 8-PowerVDFN not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL NO LEAD NOT SPECIFIED NOT SPECIFIED 8 S-PDSO-N5 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 2.1W 10 ns 60V 2.1W Ta 50W Tc 20A SWITCHING 14 ns SILICON N-Channel 11m Ω @ 20A, 10V 4V @ 23μA 2700pF @ 30V 33nC @ 10V 77ns 6 ns 20V 20A Tc 55 mJ 10V ±20V
    SPD08P06PGBTMA1 SPD08P06PGBTMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 1999 SIPMOS® no Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead -8.8A 3 AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant 2.5mm Surface Mount -55°C~175°C TJ -60V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 1 Not Qualified 1 SINGLE WITH BUILT-IN DIODE Not Halogen Free 42W 16 ns -3V -60V 42W Tc -8.83A 175°C 48 ns SILICON P-Channel 300m Ω @ 10A, 6.2V 4V @ 250μA 420pF @ 25V 13nC @ 10V 46ns 14 ns 20V -60V 8.83A Ta 60V 70 mJ 6.2V ±20V
    IRFR3910TRLPBF IRFR3910TRLPBF Infineon Technologies $0.00
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    		 download 12 Weeks Tape & Reel (TR) 1998 HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 79W Tc SWITCHING 0.115Ohm 100V SILICON N-Channel 115m Ω @ 10A, 10V 4V @ 250μA 640pF @ 25V 44nC @ 10V 16A 16A Tc 100V 60A 150 mJ 10V ±20V