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Infineon Technologies(12661)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Lead Pitch | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Manufacturer Package Identifier | Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Reference Standard | Voltage | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Row Spacing | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | FET Feature | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IPB60R160C6ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2008 | CoolMOS™ | no | Not For New Designs | 1 (Unlimited) | 2 | ROHS3 Compliant | Contains Lead | 2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 176W | 13 ns | 600V | 176W Tc | 23.8A | SWITCHING | 96 ns | SILICON | N-Channel | 160m Ω @ 11.3A, 10V | 3.5V @ 750μA | 1660pF @ 100V | 75nC @ 10V | 8 ns | 20V | 23.8A Tc | 70A | 497 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPB100N06S205ATMA4 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | OptiMOS™ | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 55V | 300W Tc | 100A | 0.0047Ohm | SILICON | N-Channel | 4.7m Ω @ 80A, 10V | 4V @ 250μA | 5110pF @ 25V | 170nC @ 10V | 100A Tc | 400A | 810 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS4010TRL7PP | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | HEXFET® | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | No | 7 | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | No SVHC | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | FET General Purpose Power | 1 | Single | 380W | 19 ns | 380W Tc | 190A | 100 ns | N-Channel | 4m Ω @ 110A, 10V | 4V @ 250μA | 9830pF @ 50V | 230nC @ 10V | 56ns | 48 ns | 20V | 100V | 4 V | 190A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB015N04LGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | no | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 250W | 25 ns | 40V | 250W Tc | 120A | SWITCHING | 108 ns | SILICON | N-Channel | 1.5m Ω @ 100A, 10V | 2V @ 200μA | 28000pF @ 25V | 346nC @ 10V | 13ns | 21 ns | 20V | 120A Tc | 400A | 865 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRF7739L1TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | No | 15 | DirectFET™ Isometric L8 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | FET General Purpose Power | 1 | Single | 3.8W | 21 ns | 3.8W Ta 125W Tc | 270A | 56 ns | N-Channel | 1m Ω @ 160A, 10V | 4V @ 250μA | 11880pF @ 25V | 330nC @ 10V | 71ns | 42 ns | 20V | 375A | 46A Ta 270A Tc | 40V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS7734TRL7PP | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | HEXFET®, StrongIRFET™ | Active | 1 (Unlimited) | 6 | EAR99 | 10.54mm | ROHS3 Compliant | Lead Free | 6 | TO-263-7, D2Pak (6 Leads + Tab) | No SVHC | 4.83mm | 9.65mm | Surface Mount | 1.59999g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | 1 | DRAIN | Single | 17 ns | 294W Tc | 197A | SWITCHING | 0.00305Ohm | 75V | 123 ns | SILICON | N-Channel | 3.05m Ω @ 100A, 10V | 3.7V @ 150μA | 10130pF @ 25V | 270nC @ 10V | 85ns | 75 ns | 20V | 197A Tc | 75V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7749L2TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | HEXFET® | Not For New Designs | 1 (Unlimited) | 9 | EAR99 | 9.144mm | ROHS3 Compliant | No | 8 | DirectFET™ Isometric L8 | No SVHC | 740μm | 7.112mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | IRF7749L2TRPBF | e1 | TIN SILVER COPPER | BOTTOM | 260 | 30 | R-XBCC-N9 | 1 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.8W | 29 ns | 4V | 3.3W Ta 125W Tc | 33A | 175°C | SWITCHING | 72 ns | SILICON | N-Channel | 1.5m Ω @ 120A, 10V | 4V @ 250μA | 12320pF @ 25V | 300nC @ 10V | 43ns | 39 ns | 60V | 60V | 2.9 V | 375A | 33A Ta 375A Tc | 260 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| AUIRF7749L2TR | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | Automotive, AEC-Q101, OptiMOS™ | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | DirectFET™ Isometric L8 | 740μm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | AUIRF7749L2TR | NOT SPECIFIED | NOT SPECIFIED | 1 | 3.8W | 29 ns | 2V | 3.8W Ta 341W Tc | 36A | 175°C | 72 ns | N-Channel | 1.5m Ω @ 120A, 10V | 4V @ 250μA | 10655pF @ 25V | 275nC @ 10V | 60V | 60V | 36A Ta 345A Tc | 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPT059N15N3ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | 2012 | OptiMOS™ | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | 8-PowerSFN | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | FLAT | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-F2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 375W Tc | SWITCHING | 0.0059Ohm | 150V | SILICON | N-Channel | 5.9m Ω @ 150A, 10V | 4V @ 270μA | 7200pF @ 75V | 92nC @ 10V | 155A | 155A Tc | 150V | 620A | 520 mJ | 8V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPL60R065P7AUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | 2014 | CoolMOS™ P7 | Active | 2A (4 Weeks) | 4 | EAR99 | ROHS3 Compliant | 4-PowerTSFN | not_compliant | 1.1mm | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | YES | S-PSSO-N4 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 201W | 16 ns | 201W Tc | 41A | 150°C | SWITCHING | 0.065Ohm | 73 ns | SILICON | N-Channel | 65m Ω @ 15.9A, 10V | 4V @ 800μA | 2895pF @ 400V | 67nC @ 10V | 20V | 600V | 41A Tc | 650V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFS4310Z | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 11 Weeks | Tube | 2010 | HEXFET® | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 250W Tc | SWITCHING | 0.006Ohm | 100V | SILICON | N-Channel | 6m Ω @ 75A, 10V | 4V @ 150μA | 6860pF @ 50V | 170nC @ 10V | 120A | 120A Tc | 100V | 560A | 130 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP100N10S305AKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 2006 | OptiMOS™ | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | 10mm | ROHS3 Compliant | 3 | TO-220-3 | not_compliant | 9.25mm | 4.4mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | NO | 1 | TO-220AB | Halogen Free | Single | 300W | 34 ns | 100V | 300W Tc | 100A | 0.0051Ohm | 60 ns | SILICON | N-Channel | 5.1m Ω @ 100A, 10V | 4V @ 240μA | 11570pF @ 25V | 176nC @ 10V | 17ns | 20 ns | 20V | 100V | 100A Tc | 400A | 1445 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR220NTRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 43W Tc | SWITCHING | 0.6Ohm | 200V | SILICON | N-Channel | 600m Ω @ 2.9A, 10V | 4V @ 250μA | 300pF @ 25V | 23nC @ 10V | 5A | 5A Tc | 200V | 20A | 46 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7410TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | HEXFET® | Active | 1 (Unlimited) | 8 | SMD/SMT | 4.9784mm | ROHS3 Compliant | Lead Free | Tin | -16A | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.75mm | 3.9878mm | 7MOhm | Surface Mount | -55°C~150°C TJ | -12V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 30 | 1 | 1 | 6.3 mm | Single | 2.5W | 13 ns | -400mV | 2.5W Ta | 145 ns | -16A | 150°C | SWITCHING | 271 ns | SILICON | P-Channel | 7m Ω @ 16A, 4.5V | 900mV @ 250μA | 8676pF @ 10V | 91nC @ 4.5V | 12ns | 200 ns | 8V | -12V | -12V | -900 mV | 16A Ta | 12V | 65A | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||
| IRF7807VTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2003 | HEXFET® | Not For New Designs | 1 (Unlimited) | EAR99 | 4.9784mm | ROHS3 Compliant | Lead Free | 8.3A | No | 8 | 8-SOIC (0.154, 3.90mm Width) | 1.4986mm | 3.9878mm | 25MOhm | Surface Mount | -55°C~150°C TJ | 30V | MOSFET (Metal Oxide) | FET General Purpose Power | 1 | Single | 2.5W | 6.3 ns | 2.5W Ta | 8.3A | 11 ns | N-Channel | 25m Ω @ 7A, 4.5V | 3V @ 250μA | 14nC @ 5V | 1.2ns | 2.2 ns | 20V | 30V | 8.3A Ta | 4.5V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB60R040C7ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | 2014 | CoolMOS™ C7 | Active | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | TO-263-4, D2Pak (3 Leads + Tab), TO-263AA | 4.5mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 227W | 18.5 ns | 34mOhm | PG-TO263-3 | 227W Tc | 50A | 150°C | 81 ns | N-Channel | 40mOhm @ 24.9A, 10V | 4V @ 1.24mA | 4340pF @ 400V | 107nC @ 10V | 20V | 600V | 50A Tc | 650V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPT60R028G7XTMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | 2014 | CoolMOS™ G7 | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 8-PowerSFN | 2.4mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | PG-HSOF-8 | e3 | Tin (Sn) | SINGLE | FLAT | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-F3 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 391W | 28 ns | 391W Tc | 75A | 150°C | SWITCHING | 0.028Ohm | 100 ns | SILICON | N-Channel | 28m Ω @ 28.8A, 10V | 4V @ 1.44mA | 4820pF @ 400V | 123nC @ 10V | 20V | 600V | 75A Tc | 245A | 288 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IGT60R070D1ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | CoolGaN™ | Active | 1 (Unlimited) | ROHS3 Compliant | 8-PowerSFN | Surface Mount | -55°C~150°C TJ | GaNFET (Gallium Nitride) | 125W Tc | N-Channel | 1.6V @ 2.6mA | 380pF @ 400V | 31A Tc | 600V | -10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IGO60R070D1AUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | CoolGaN™ | Active | 1 (Unlimited) | ROHS3 Compliant | 20-PowerSOIC (0.433, 11.00mm Width) | Surface Mount | -55°C~150°C TJ | GaNFET (Gallium Nitride) | 125W Tc | N-Channel | 1.6V @ 2.6mA | 380pF @ 400V | 31A Tc | 600V | -10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB033N10N5LFATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Tape & Reel (TR) | 2013 | OptiMOS™-5 | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.5mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G2 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 179W | 8 ns | 3.3V | 179W Tc | 120A | 0.0033Ohm | 64 ns | SILICON | N-Channel | 3.3m Ω @ 100A, 10V | 4.1V @ 150μA | 460pF @ 50V | 102nC @ 10V | 20V | 100V | 23A | 120A Tc | 480A | 273 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IGOT60R070D1AUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | CoolGaN™ | Active | 3 (168 Hours) | ROHS3 Compliant | 20-PowerSOIC (0.433, 11.00mm Width) | Surface Mount | -55°C~150°C TJ | GaNFET (Gallium Nitride) | 125W Tc | N-Channel | 1.6V @ 2.6mA | 380pF @ 400V | 31A Tc | 600V | -10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ44ESTRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2001 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | Contains Lead, Lead Free | Tin | 48A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.826mm | 9.65mm | 23mOhm | Surface Mount | -55°C~175°C TJ | 60V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | DRAIN | Single | 110W | 12 ns | 4V | 110W Tc | 48A | SWITCHING | 70 ns | SILICON | N-Channel | 23m Ω @ 29A, 10V | 4V @ 250μA | 1360pF @ 25V | 60nC @ 10V | 60ns | 70 ns | 20V | 60V | 48A Tc | 220 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRFB3806PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2008 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 10.6426mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-220-3 | No SVHC | 9.017mm | 4.82mm | 15.8MOhm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 71W | 6.3 ns | 4V | 71W Tc | 33 ns | 43A | SWITCHING | 49 ns | SILICON | N-Channel | 15.8m Ω @ 25A, 10V | 4V @ 50μA | 1150pF @ 50V | 30nC @ 10V | 40ns | 47 ns | 20V | 60V | 43A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ46NPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2002 | HEXFET® | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 10.54mm | ROHS3 Compliant | Contains Lead, Lead Free | Tin | 53A | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-220-3 | No SVHC | 2.54mm | 8.77mm | 4.69mm | Through Hole | -55°C~175°C TJ | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 40A | e3 | 250 | 30 | FET General Purpose Power | Not Qualified | 55V | 1 | TO-220AB | DRAIN | Single | 88W | 14 ns | 4V | 107W Tc | 101 ns | 53A | SWITCHING | 52 ns | SILICON | N-Channel | 16.5m Ω @ 28A, 10V | 4V @ 250μA | 1696pF @ 25V | 72nC @ 10V | 76ns | 57 ns | 20V | 55V | 55V | 4 V | 53A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRFU13N20DPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Through Hole | Tube | 2000 | HEXFET® | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | 6.7056mm | ROHS3 Compliant | Lead Free | 13A | 3 | TO-251-3 Short Leads, IPak, TO-251AA | No SVHC | 2.39mm | 2.3876mm | 235MOhm | Through Hole | -55°C~175°C TJ | 200V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | 30 | FET General Purpose Power | Not Qualified | 1 | DRAIN | Single | 110W | 11 ns | 110W Tc | 13A | SWITCHING | 17 ns | SILICON | N-Channel | 235m Ω @ 8A, 10V | 5.5V @ 250μA | 830pF @ 25V | 38nC @ 10V | 27ns | 10 ns | 30V | 200V | 200V | 5.5 V | 13A Tc | 52A | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| BSS123NH6433XTMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Cut Tape (CT) | 2012 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | 2.9mm | ROHS3 Compliant | 3 | LOGIC LEVEL COMPATIBLE | TO-236-3, SC-59, SOT-23-3 | 1mm | 1.3mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | AEC-Q101 | 1 | Single | 2.3 ns | 500mW Ta | 190mA | 6Ohm | 100V | 7.4 ns | SILICON | N-Channel | 6 Ω @ 190mA, 10V | 1.8V @ 13μA | 20.9pF @ 25V | 0.9nC @ 10V | 3.2ns | 22 ns | 20V | 0.19A | 190mA Ta | 100V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS126H6327XTSA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2003 | SIPMOS® | Active | 1 (Unlimited) | 150°C | -55°C | 2.9mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-236-3, SC-59, SOT-23-3 | 1mm | 1.3mm | 700Ohm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | Halogen Free | Single | 500mW | 6.1 ns | 600V | 700Ohm | SOT-23-3 | 500mW Ta | 17mA | 14 ns | N-Channel | 500Ohm @ 16mA, 10V | 1.6V @ 8μA | 28pF @ 25V | 2.1nC @ 5V | 9.7ns | 20V | Depletion Mode | 21mA Ta | 600V | 21pF | 0V 10V | ±20V | 700 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLML2030TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2003 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 3.0226mm | ROHS3 Compliant | Lead Free | No | 3 | TO-236-3, SC-59, SOT-23-3 | No SVHC | 1.016mm | 1.397mm | 100MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | FET General Purpose Power | 1 | Single | 1.3W | 4.1 ns | 1.7V | 1.3W Ta | 14 ns | 2.7A | SWITCHING | 4.5 ns | SILICON | N-Channel | 100m Ω @ 2.7A, 10V | 2.3V @ 25μA | 110pF @ 15V | 1nC @ 4.5V | 3.3ns | 2.9 ns | 20V | 30V | 1.7 V | 2.2A | 2.7A Ta | 11A | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IPN60R3K4CEATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | CoolMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 3 | SOT-223-3 | No SVHC | not_compliant | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3V | 5W Tc | 2.6A | SWITCHING | 600V | SILICON | N-Channel | 3.4 Ω @ 500mA, 10V | 3.5V @ 40μA | 93pF @ 100V | 4.6nC @ 10V | Super Junction | 2.6A Tc | 600V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFH3707TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 3mm | ROHS3 Compliant | Lead Free | No | 8 | 8-PowerVDFN | No SVHC | 950μm | 3mm | 12.4MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | S-PDSO-N3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 2.8W | 7.8 ns | 1.8V | 2.8W Ta | 12mA | SWITCHING | 8.7 ns | SILICON | N-Channel | 12.4m Ω @ 12A, 10V | 2.35V @ 25μA | 755pF @ 15V | 8.1nC @ 4.5V | 10.2ns | 9.7 ns | 20V | 30V | 1.8 V | 12A | 12A Ta 29A Tc | 96A | 13 mJ | 4.5V 10V | ±20V |