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Infineon Technologies(12661)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Reference Standard | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Polarity/Channel Type | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Drain to Source Resistance | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | FET Technology | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRF540ZLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2010 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | 36A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-262-3 Long Leads, I2Pak, TO-262AA | No SVHC | 9.65mm | 4.826mm | 26.5MOhm | Through Hole | -55°C~175°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | 30 | FET General Purpose Power | 1 | DRAIN | Single | 92W | 15 ns | 92W Tc | 36A | SWITCHING | 43 ns | SILICON | N-Channel | 26.5m Ω @ 22A, 10V | 4V @ 250μA | 1770pF @ 25V | 63nC @ 10V | 51ns | 39 ns | 20V | 100V | 4 V | 36A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IPB180N04S401ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | OptiMOS™ | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | Contains Lead | 7 | ULTRA-LOW RESISTANCE | TO-263-7, D2Pak (6 Leads + Tab) | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G6 | AEC-Q101 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 35 ns | 40V | 188W Tc | 180A | 0.0013Ohm | 38 ns | SILICON | N-Channel | 1.3m Ω @ 100A, 10V | 4V @ 140μA | 14000pF @ 25V | 176nC @ 10V | 24ns | 41 ns | 20V | 180A Tc | 550 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IPB035N08N3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | no | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | No | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 4 | R-PSSO-G2 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 214W | 23 ns | 80V | 214W Tc | 100A | SWITCHING | 0.0035Ohm | 45 ns | SILICON | N-Channel | 3.5m Ω @ 100A, 10V | 3.5V @ 155μA | 8110pF @ 40V | 117nC @ 10V | 79ns | 14 ns | 20V | 100A Tc | 400A | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRF1104PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 1998 | HEXFET® | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 10.5156mm | ROHS3 Compliant | Lead Free | 100A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | TO-220-3 | No SVHC | 8.77mm | 4.69mm | 9mOhm | Through Hole | -55°C~175°C TJ | 40V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 170W | 15 ns | 4V | 170W Tc | 110 ns | 100A | SWITCHING | 28 ns | SILICON | N-Channel | 9m Ω @ 60A, 10V | 4V @ 250μA | 2900pF @ 25V | 93nC @ 10V | 114ns | 19 ns | 20V | 40V | 40V | 4 V | 100A Tc | 400A | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IRF100B202 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2013 | HEXFET®, StrongIRFET™ | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 221W Tc | 97A | N-Channel | 8.6m Ω @ 58A, 10V | 4V @ 150μA | 4476pF @ 50V | 116nC @ 10V | 97A Tc | 100V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP072N10N3GXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Tube | 2008 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | 150W Tc | SWITCHING | 0.0072Ohm | 100V | SILICON | N-Channel | 7.2m Ω @ 80A, 10V | 3.5V @ 90μA | 4910pF @ 50V | 68nC @ 10V | 80A | 80A Tc | 100V | 320A | 160 mJ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IPA50R190CEXKSA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2008 | CoolMOS™ CE | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 Full Pack | Through Hole | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | Halogen Free | 500V | 32W Tc | 18.5A | SWITCHING | 0.19Ohm | SILICON | N-Channel | 190m Ω @ 6.2A, 13V | 3.5V @ 510μA | 1137pF @ 100V | 47.2nC @ 10V | 18.5A Tc | 13V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF4104SPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 15 Weeks | Surface Mount | Tube | 2004 | HEXFET® | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | 75A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 9.65mm | 5.5MOhm | Surface Mount | -55°C~175°C TJ | 75V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 140W | 16 ns | 4V | 140W Tc | 35 ns | 75A | SWITCHING | 38 ns | SILICON | N-Channel | 5.5m Ω @ 75A, 10V | 4V @ 250μA | 3000pF @ 25V | 100nC @ 10V | 130ns | 77 ns | 20V | 40V | 75A Tc | 470A | 220 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||
| AUIRFR540Z | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tube | 2013 | HEXFET® | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | FET General Purpose Power | 1 | Single | 91W | 14 ns | 4V | 91W Tc | 35A | 43 ns | N-Channel | 28.5m Ω @ 21A, 10V | 4V @ 50μA | 1690pF @ 25V | 59nC @ 10V | 42ns | 34 ns | 20V | 100V | 35A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI086N10N3GXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2008 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | No | TO-262-3 Long Leads, I2Pak, TO-262AA | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | 3 | R-PSIP-T3 | 1 | SINGLE WITH BUILT-IN DIODE | Halogen Free | 125W | 18 ns | 100V | 125W Tc | 80A | SWITCHING | 0.0086Ohm | 31 ns | SILICON | N-Channel | 8.6m Ω @ 73A, 10V | 3.5V @ 75μA | 3980pF @ 50V | 55nC @ 10V | 42ns | 8 ns | 20V | 80A Tc | 320A | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRL2910STRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | 55A | No | 3 | LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY, AVALANCHE RATED | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.826mm | 9.65mm | 26mOhm | Surface Mount | -55°C~175°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | DRAIN | Single | 200W | 11 ns | 2V | 3.8W Ta 200W Tc | 350 ns | 55A | SWITCHING | 49 ns | SILICON | N-Channel | 26m Ω @ 29A, 10V | 2V @ 250μA | 3700pF @ 25V | 140nC @ 5V | 100ns | 55 ns | 16V | 100V | 100V | 2 V | 55A Tc | 520 mJ | 4V 10V | ±16V | ||||||||||||||||||||||||||||||
| IPB020N08N5ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | 3.949996g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | 1 | DRAIN | Halogen Free | Single | 28 ns | 80V | 300W Tc | 120A | SWITCHING | 0.002Ohm | 62 ns | SILICON | N-Channel | 2m Ω @ 100A, 10V | 3.8V @ 208μA | 12100pF @ 40V | 166nC @ 10V | 16ns | 20 ns | 20V | 120A Tc | 480A | 674 mJ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRF135B203 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tube | 2013 | StrongIRFET™ | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 441W Tc | 129A | N-Channel | 8.4m Ω @ 77A, 10V | 4V @ 250μA | 9700pF @ 50V | 270nC @ 10V | 129A Tc | 135V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF300P227 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Tube | 2017 | StrongIRFET™ | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-247-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 313W Tc | N-Channel | 40m Ω @ 30A, 10V | 4V @ 270μA | 4893pF @ 50V | 107nC @ 10V | 50A Tc | 300V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF250P225 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Tube | 1999 | StrongIRFET™ | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-247-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 313W Tc | N-Channel | 22m Ω @ 41A, 10V | 4V @ 270μA | 4897pF @ 50V | 96nC @ 10V | 69A Tc | 250V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP50R190CEXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2008 | CoolMOS™ CE | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 3 | FET General Purpose Power | 1 | TO-220AB | Halogen Free | Single | 127W | 9.5 ns | 500V | 127W Tc | 18.5A | SWITCHING | 0.19Ohm | 54 ns | SILICON | N-Channel | 190m Ω @ 6.2A, 13V | 3.5V @ 510μA | 1137pF @ 100V | 47.2nC @ 10V | 8.5ns | 7.5 ns | 20V | 550V | 18.5A Tc | 13V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRFR4104TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2003 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 6.7056mm | ROHS3 Compliant | Lead Free | 42A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 1.778mm | 6.22mm | 5.5MOhm | Surface Mount | -55°C~175°C TJ | 40V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 140W | 17 ns | 4V | 140W Tc | 42 ns | 42A | SWITCHING | 37 ns | SILICON | N-Channel | 5.5m Ω @ 42A, 10V | 4V @ 250μA | 2950pF @ 25V | 89nC @ 10V | 69ns | 36 ns | 20V | 40V | 42A Tc | 480A | 10V | ±20V | |||||||||||||||||||||||||||||||
| IRFH8201TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | HEXFET®, StrongIRFET™ | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | 8 | 8-PowerTDFN | No SVHC | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Single | 3.6W | 27 ns | 1.8V | 3.6W Ta 156W Tc | 100A | 31 ns | N-Channel | 0.95m Ω @ 50A, 10V | 2.35V @ 150μA | 7330pF @ 13V | 111nC @ 10V | 54ns | 22 ns | 20V | 49A Ta 100A Tc | 25V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB144N12N3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | no | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 107W | 16 ns | 107W Tc | 56A | SWITCHING | 24 ns | SILICON | N-Channel | 14.4m Ω @ 56A, 10V | 4V @ 61μA | 3220pF @ 60V | 49nC @ 10V | 9ns | 4 ns | 20V | 56A Ta | 120V | 224A | 90 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| BSB014N04LX3GXUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | yes | Active | 3 (168 Hours) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 2 | 3-WDSON | No SVHC | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e4 | Silver/Nickel (Ag/Ni) | BOTTOM | NO LEAD | 3 | R-MBCC-N3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 89W | 12 ns | 2V | 40V | 2.8W Ta 89W Tc | 36A | SWITCHING | 60 ns | SILICON | N-Channel | 1.4m Ω @ 30A, 10V | 2V @ 250μA | 16900pF @ 20V | 196nC @ 10V | 8.4ns | 10 ns | 20V | 36A Ta 180A Tc | 400A | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRLB4132PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2009 | HEXFET® | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | TO-220-3 | 3.5mOhm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 140W Tc | 78A | N-Channel | 3.5m Ω @ 40A, 10V | 2.35V @ 100μA | 5110pF @ 15V | 54nC @ 4.5V | 78A Tc | 30V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP076N15N5AKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Tube | 2013 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 175°C | -55°C | ROHS3 Compliant | not_compliant | 20.7mm | Through Hole | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | DRAIN | N-CHANNEL | 214W | 14 ns | 5.9mOhm | 112A | 175°C | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 20 ns | 20V | 150V | 150V | 448A | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPSA70R1K4CEAKMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tube | 2013 | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-251-3 Short Leads, IPak, TO-251AA | not_compliant | Through Hole | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSIP-T3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 53W Tc | SWITCHING | 700V | SILICON | N-Channel | 1.4 Ω @ 1A, 10V | 3.5V @ 100μA | 225pF @ 100V | 10.5nC @ 10V | 5.4A Tc | 700V | 8.3A | 26 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF135SA204 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | HEXFET®, StrongIRFET™ | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | TO-263-7, D2Pak (6 Leads + Tab) Variant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G6 | 1 | SINGLE WITH BUILT-IN DIODE | TO-263CB | DRAIN | 500W Tc | 160A | SWITCHING | 0.0059Ohm | 135V | SILICON | N-Channel | 5.9m Ω @ 96A, 10V | 4V @ 250μA | 11690pF @ 50V | 315nC @ 10V | 160A Tc | 135V | 608A | 1280 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3703PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2004 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 10.5156mm | ROHS3 Compliant | Lead Free | Tin | 210A | No | 3 | AVALANCHE RATED, ULTRA LOW RESISTANCE | TO-220-3 | No SVHC | 15.24mm | 4.69mm | 2.8Ohm | Through Hole | -55°C~175°C TJ | 30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | 250 | 30 | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 230W | 18 ns | 4V | 3.8W Ta 230W Tc | 210A | SWITCHING | 53 ns | SILICON | N-Channel | 2.8m Ω @ 76A, 10V | 4V @ 250μA | 8250pF @ 25V | 209nC @ 10V | 123ns | 24 ns | 20V | 30V | 30V | 4 V | 75A | 210A Tc | 7V 10V | ±20V | ||||||||||||||||||||||||||||||||
| IPA60R160C6XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2008 | CoolMOS™ | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | 3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | Halogen Free | 34W | 13 ns | 600V | 34W Tc | 23.8A | SWITCHING | 96 ns | SILICON | N-Channel | 160m Ω @ 11.3A, 10V | 3.5V @ 750μA | 1660pF @ 100V | 75nC @ 10V | 13ns | 8 ns | 20V | 23.8A Tc | 70A | 497 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPW80R360P7XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tube | 2018 | CoolMOS™ P7 | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-247-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 84W Tc | SWITCHING | 0.36Ohm | 800V | SILICON | N-Channel | 360m Ω @ 5.6A, 10V | 3.5V @ 280μA | 930pF @ 500V | 30nC @ 10V | 13A Tc | 800V | 34A | 34 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP60R165CPXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2008 | CoolMOS™ | yes | Not For New Designs | 1 (Unlimited) | 2 | ROHS3 Compliant | Lead Free | 21A | 3 | TO-220-3 | Through Hole | -55°C~150°C TJ | 600V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 192W | 12 ns | 600V | 192W Tc | 21A | SWITCHING | 50 ns | SILICON | N-Channel | 165m Ω @ 12A, 10V | 3.5V @ 790μA | 2000pF @ 100V | 52nC @ 10V | 5ns | 20V | 21A Tc | 522 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IPA105N15N3GXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2008 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 Full Pack | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | Halogen Free | 40.5W | 17 ns | 150V | 40.5W Tc | 37A | 35 ns | SILICON | N-Channel | 10.5m Ω @ 37A, 10V | 4V @ 160μA | 4300pF @ 75V | 55nC @ 10V | 20ns | 9 ns | 20V | 37A Tc | 740 mJ | 8V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IPA50R140CPXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 2008 | CoolMOS™ | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | 34W Tc | SWITCHING | 0.14Ohm | 500V | SILICON | N-Channel | 140m Ω @ 14A, 10V | 3.5V @ 930μA | 2540pF @ 100V | 64nC @ 10V | 23A | 23A Tc | 500V | 56A | 616 mJ | 10V | ±20V |