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Infineon Technologies(12661)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Max Power Dissipation | Reference Standard | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Polarity/Channel Type | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Drain to Source Resistance | Supplier Device Package | Reverse Recovery Time | Power Dissipation-Max | Continuous Drain Current (ID) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | FET Technology | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| AUIRFR9024NTRL | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Tape & Reel (TR) | 2014 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | AVALANCHE RATED, HIGH RELIABILITY | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | Other Transistors | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 38W Tc | SWITCHING | 0.175Ohm | 55V | SILICON | P-Channel | 175m Ω @ 6.6A, 10V | 4V @ 250μA | 350pF @ 25V | 19nC @ 10V | 11A | 11A Tc | 55V | 44A | 62 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ44ESTRRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | 2004 | HEXFET® | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | AVALANCHE RATED, HIGH RELIABILITY | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 110W Tc | SWITCHING | 0.023Ohm | 60V | SILICON | N-Channel | 23m Ω @ 29A, 10V | 4V @ 250μA | 1360pF @ 25V | 60nC @ 10V | 48A | 48A Tc | 60V | 192A | 220 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRLU2905PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2004 | HEXFET® | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | 175°C | -55°C | 6.7056mm | ROHS3 Compliant | Lead Free | 42A | No | 3 | AVALANCHE RATED | TO-251-3 Short Leads, IPak, TO-251AA | No SVHC | 6.22mm | 2.3876mm | 27mOhm | Through Hole | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | 260 | 30 | FET General Purpose Power | 110W | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 110W | 11 ns | 2V | 42A | SWITCHING | 26 ns | N-Channel | 27m Ω @ 25A, 10V | 2V @ 250μA | 1700pF @ 25V | 48nC @ 5V | 84ns | 15 ns | 16V | 55V | 55V | 2 V | 20A | 42A Tc | |||||||||||||||||||||||||||||||||||||
| AUIRFU8401 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Through Hole | Tube | 2013 | HEXFET® | Active | 1 (Unlimited) | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | No | 3 | TO-251-3 Short Leads, IPak, TO-251AA | No SVHC | 6.22mm | 2.39mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | 1 | FET General Purpose Power | Single | 79W | 7.9 ns | 79W Tc | 100A | 25 ns | N-Channel | 4.25m Ω @ 60A, 10V | 3.9V @ 500μA | 2200pF @ 25V | 63nC @ 10V | 34ns | 24 ns | 20V | 100A Tc | 40V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPU04N60C3BKMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Tube | 2005 | CoolMOS™ | no | Last Time Buy | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 4.5A | 3 | AVALANCHE RATED | TO-251-3 Short Leads, IPak, TO-251AA | No SVHC | Through Hole | -55°C~150°C TJ | 650V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | Not Qualified | 1 | Single | 50W | 6 ns | 3V | 50W Tc | 4.5A | SWITCHING | 0.95Ohm | 58.5 ns | SILICON | N-Channel | 950m Ω @ 2.8A, 10V | 3.9V @ 200μA | 490pF @ 25V | 25nC @ 10V | 2.5ns | 9.5 ns | 20V | 600V | 4.5A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IPB80P04P4L08ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | Automotive, AEC-Q101, OptiMOS™ | Not For New Designs | 1 (Unlimited) | EAR99 | 10mm | ROHS3 Compliant | Contains Lead | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | 4.4mm | 9.25mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | Halogen Free | Single | 75W | 12 ns | -40V | 75W Tc | -80A | 42 ns | P-Channel | 7.9m Ω @ 80A, 10V | 2.2V @ 120μA | 5430pF @ 25V | 92nC @ 10V | 11ns | 35 ns | 16V | -40V | 80A Tc | 40V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPB120N04S404ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | Automotive, AEC-Q101, OptiMOS™ | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 40V | 79W Tc | 120A | 0.0036Ohm | SILICON | N-Channel | 3.6m Ω @ 100A, 10V | 4V @ 40μA | 4100pF @ 25V | 55nC @ 10V | 120A Tc | 480A | 75 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF540NSTRRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 1997 | HEXFET® | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 130W Tc | SWITCHING | 0.044Ohm | 100V | SILICON | N-Channel | 44m Ω @ 16A, 10V | 4V @ 250μA | 1960pF @ 25V | 71nC @ 10V | 33A | 33A Tc | 100V | 110A | 185 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRL7732S2TR | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | No | 7 | HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE | DirectFET™ Isometric SC | No SVHC | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | BOTTOM | R-XBCC-N3 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 2.2W | 21 ns | 1.8V | 2.2W Ta 41W Tc | 14A | SWITCHING | 0.0066Ohm | 22 ns | SILICON | N-Channel | 6.6m Ω @ 35A, 10V | 2.5V @ 50μA | 2020pF @ 25V | 33nC @ 4.5V | 123ns | 37 ns | 16V | 40V | 58A | 14A Ta | 230A | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||
| BSF134N10NJ3GXUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | yes | Active | 3 (168 Hours) | 2 | EAR99 | ROHS3 Compliant | Lead Free | Silver | 7 | 3-WDSON | No SVHC | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e4 | BOTTOM | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 2 | R-MBCC-N2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.2W | 2.7V | 100V | 2.2W Ta 43W Tc | 9A | SWITCHING | SILICON | N-Channel | 13.4m Ω @ 30A, 10V | 3.5V @ 40μA | 2300pF @ 50V | 30nC @ 10V | 6ns | 20V | 9A | 9A Ta 40A Tc | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| AUIRFSL6535 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tube | 2015 | Automotive, AEC-Q101, HEXFET® | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-262-3 Long Leads, I2Pak, TO-262AA | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Single | 210W Tc | 19A | N-Channel | 185m Ω @ 11A, 10V | 5V @ 150μA | 2340pF @ 25V | 57nC @ 10V | 19A Tc | 300V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP60R074C6XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2008 | CoolMOS™ | yes | Last Time Buy | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | TO-220-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | Halogen Free | 11 ns | 600V | 480.8W Tc | 57.7A | SWITCHING | 0.074Ohm | 56 ns | SILICON | N-Channel | 74m Ω @ 21A, 10V | 3.5V @ 1.4mA | 3020pF @ 100V | 138nC @ 10V | 7ns | 4 ns | 20V | 57.7A Tc | 923 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRFS3107PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2008 | HEXFET® | Discontinued | 1 (Unlimited) | SMD/SMT | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.826mm | 9.65mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | 1 | Single | 370W | 19 ns | 2.35V | 54 ns | 370W Tc | 230A | 99 ns | N-Channel | 3m Ω @ 140A, 10V | 4V @ 250μA | 9370pF @ 50V | 240nC @ 10V | 110ns | 100 ns | 20V | 75V | 75V | 2.35 V | 195A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SPW35N60CFDFKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 2005 | CoolMOS™ | yes | Not For New Designs | 1 (Unlimited) | 3 | ROHS3 Compliant | AVALANCHE RATED, HIGH VOLTAGE | TO-247-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AA | 313W Tc | 0.118Ohm | 600V | SILICON | N-Channel | 118m Ω @ 21.6A, 10V | 5V @ 1.9mA | 5060pF @ 25V | 212nC @ 10V | 34.1A | 34.1A Tc | 600V | 85A | 1300 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA65R045C7XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2008 | CoolMOS™ C7 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | Halogen Free | 20 ns | 650V | 35W Tc | 18A | SWITCHING | 0.045Ohm | 82 ns | SILICON | N-Channel | 45m Ω @ 24.9A, 10V | 4V @ 1.25mA | 4340pF @ 400V | 93nC @ 10V | 14ns | 7 ns | 20V | 18A Tc | 212A | 249 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IPW60R075CPFKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 52 Weeks | Through Hole | Tube | 2008 | CoolMOS™ | yes | Not For New Designs | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | No | 3 | TO-247-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | 3 | 1 | SINGLE WITH BUILT-IN DIODE | 313W | 40 ns | 600V | 313W Tc | 39A | SWITCHING | 0.075Ohm | 110 ns | SILICON | N-Channel | 75m Ω @ 26A, 10V | 3.5V @ 1.7mA | 4000pF @ 100V | 116nC @ 10V | 17ns | 7 ns | 20V | 39A Tc | 650V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR8726TRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | HEXFET® | Not For New Designs | 1 (Unlimited) | 175°C | -55°C | 6.7056mm | ROHS3 Compliant | Tin | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.26mm | 6.22mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | 1 | Single | 75W | 12 ns | 5.8mOhm | D-Pak | 75W Tc | 86A | 15 ns | N-Channel | 5.8mOhm @ 25A, 10V | 2.35V @ 50μA | 2150pF @ 15V | 23nC @ 4.5V | 49ns | 16 ns | 12V | 30V | 86A Tc | 30V | 2.15nF | 4.5V 10V | ±20V | 5.8 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD50R1K4CEAUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | CoolMOS™ CE | yes | Active | 3 (168 Hours) | EAR99 | 6.73mm | ROHS3 Compliant | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | 2.41mm | 6.22mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | e3 | Tin (Sn) | 1 | Single | 25W | 6.5 ns | 42W Tc | 3.1A | 23 ns | N-Channel | 1.4 Ω @ 900mA, 13V | 3.5V @ 70μA | 178pF @ 100V | 8.2nC @ 10V | 6ns | 30 ns | 30V | 550V | 3.1A Tc | 500V | 13V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD50R950CEAUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | yes | Active | 3 (168 Hours) | 2 | EAR99 | 150°C | -55°C | 6.73mm | ROHS3 Compliant | Contains Lead, Lead Free | 3 | TO-252-3 | not_compliant | 2.41mm | 6.22mm | ENHANCEMENT MODE | e3 | Tin (Sn) | GULL WING | R-PSSO-G2 | 34W | 1 | Halogen Free | N-CHANNEL | Single | 34W | 7 ns | 500V | 950mOhm | 4.3A | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 25 ns | 4.9ns | 19.5 ns | 20V | 500V | 500V | 12.8A | 68 mJ | 231pF | 950 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||
| IPP80N06S4L07AKSA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 2006 | Automotive, AEC-Q101, OptiMOS™ | yes | Obsolete | 1 (Unlimited) | 3 | 10mm | ROHS3 Compliant | 3 | TO-220-3 | not_compliant | 15.65mm | 4.4mm | Through Hole | 6.000006g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | NO | 1 | 1 | TO-220AB | DRAIN | Halogen Free | Single | 10 ns | 60V | 79W Tc | 80A | 0.0064Ohm | 50 ns | SILICON | N-Channel | 6.7m Ω @ 80A, 10V | 2.2V @ 40μA | 5680pF @ 25V | 75nC @ 10V | 16V | 80A Tc | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||
| IPA65R420CFDXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tube | 2008 | CoolMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | 31.2W Tc | SWITCHING | 0.42Ohm | 650V | SILICON | N-Channel | 420m Ω @ 3.4A, 10V | 4.5V @ 340μA | 870pF @ 100V | 32nC @ 10V | 8.7A | 8.7A Tc | 650V | 27A | 227 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPB180N03S4L01ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | OptiMOS™ | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | Contains Lead | 7 | ULTRA-LOW RESISTANCE | TO-263-7, D2Pak (6 Leads + Tab) | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G6 | AEC-Q101 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 8 ns | 30V | 188W Tc | 180A | 0.00105Ohm | 57 ns | SILICON | N-Channel | 1.05m Ω @ 100A, 10V | 2.2V @ 140μA | 17600pF @ 25V | 239nC @ 10V | 5ns | 23 ns | 16V | 180A Tc | 530 mJ | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||
| IPP80N06S2L07AKSA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Through Hole | Tube | 2006 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | 3 | LOGIC LEVEL COMPATIBLE | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | 55V | 210W Tc | 80A | 0.01Ohm | SILICON | N-Channel | 7m Ω @ 60A, 10V | 2V @ 150μA | 3160pF @ 25V | 130nC @ 10V | 80A Tc | 450 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD65R250E6XTMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | CoolMOS™ E6 | yes | Last Time Buy | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | Halogen Free | 208W | 11 ns | 650V | 208W Tc | 16.1A | SWITCHING | 0.25Ohm | 76 ns | SILICON | N-Channel | 250m Ω @ 4.4A, 10V | 3.5V @ 400μA | 950pF @ 1000V | 45nC @ 10V | 9ns | 20V | 700V | 16.1A Tc | 46A | 290 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| AUIRF1010Z | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Through Hole | Tube | 2010 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | Tin | No | 3 | TO-220-3 | No SVHC | 16.51mm | 4.826mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 140W | 18 ns | 2V | 140W Tc | 94A | SWITCHING | 0.0075Ohm | 36 ns | SILICON | N-Channel | 7.5m Ω @ 75A, 10V | 4V @ 250μA | 2840pF @ 25V | 95nC @ 10V | 150ns | 92 ns | 20V | 55V | 75A | 75A Tc | ||||||||||||||||||||||||||||||||||||||||||
| IRFSL7537PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2013 | HEXFET®, StrongIRFET™ | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 3 | TO-262-3 Long Leads, I2Pak, TO-262AA | No SVHC | Through Hole | 2.084002g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | 1 | DRAIN | Single | 230W | 15 ns | 3.7V | 230W Tc | 173A | SWITCHING | 82 ns | SILICON | N-Channel | 3.3m Ω @ 100A, 10V | 3.7V @ 150μA | 7020pF @ 25V | 210nC @ 10V | 105ns | 84 ns | 20V | 60V | 173A Tc | 700A | 554 mJ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IPI80N06S208AKSA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Through Hole | Tube | 2006 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | No | 3 | TO-262-3 Long Leads, I2Pak, TO-262AA | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | 1 | SINGLE WITH BUILT-IN DIODE | 14 ns | 55V | 215W Tc | 80A | 0.008Ohm | 32 ns | SILICON | N-Channel | 8m Ω @ 58A, 10V | 4V @ 150μA | 2860pF @ 25V | 96nC @ 10V | 15ns | 14 ns | 20V | 80A Tc | 450 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFS3806TRL | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Tape & Reel (TR) | 2015 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 71W Tc | SWITCHING | 0.0158Ohm | 60V | SILICON | N-Channel | 15.8m Ω @ 25A, 10V | 4V @ 50μA | 1150pF @ 50V | 30nC @ 10V | 43A | 43A Tc | 60V | 170A | 73 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPB120N08S404ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | Automotive, AEC-Q101, OptiMOS™ | yes | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | Contains Lead | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 80V | 179W Tc | 120A | 0.0041Ohm | SILICON | N-Channel | 4.1m Ω @ 100A, 10V | 4V @ 120μA | 6450pF @ 25V | 95nC @ 10V | 120A Tc | 480A | 310 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFZ44ZSTRL | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | No | 3 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 80W | 14 ns | 80W Tc | 51A | SWITCHING | 33 ns | SILICON | N-Channel | 13.9m Ω @ 31A, 10V | 4V @ 250μA | 1420pF @ 25V | 43nC @ 10V | 68ns | 41 ns | 20V | 55V | 51A Tc | 200A | 10V | ±20V |