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Infineon Technologies(12661)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Reference Standard | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Polarity/Channel Type | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | FET Technology | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | FET Feature | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRL3705ZLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2010 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | 86A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | TO-262-3 Long Leads, I2Pak, TO-262AA | 9.65mm | 4.826mm | Through Hole | -55°C~175°C TJ | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | 30 | FET General Purpose Power | 1 | DRAIN | Single | 130W | 17 ns | 130W Tc | 75A | SWITCHING | 0.008Ohm | 26 ns | SILICON | N-Channel | 8m Ω @ 52A, 10V | 3V @ 250μA | 2880pF @ 25V | 60nC @ 5V | 240ns | 83 ns | 16V | 55V | 75A Tc | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||
| IPP60R380C6XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 2008 | CoolMOS™ | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | HIGH VOLTAGE | TO-220-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | 83W Tc | SWITCHING | 0.38Ohm | 600V | SILICON | N-Channel | 380m Ω @ 3.8A, 10V | 3.5V @ 320μA | 700pF @ 100V | 32nC @ 10V | 10.6A | 10.6A Tc | 600V | 30A | 210 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPI50N10S3L16AKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Through Hole | Tube | 2008 | OptiMOS™ | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-262-3 Long Leads, I2Pak, TO-262AA | not_compliant | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | AEC-Q101 | 1 | SINGLE WITH BUILT-IN DIODE | Halogen Free | 10 ns | 100V | 100W Tc | 50A | 0.0209Ohm | 28 ns | SILICON | N-Channel | 15.7m Ω @ 50A, 10V | 2.4V @ 60μA | 4180pF @ 25V | 64nC @ 10V | 5ns | 20V | 50A Tc | 200A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRL8114PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Through Hole | Tube | 2015 | HEXFET® | Not For New Designs | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 115W Tc | 90A | N-Channel | 4.5m Ω @ 40A, 10V | 2.25V @ 250μA | 2660pF @ 15V | 29nC @ 4.5V | 90A Tc | 30V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB80P04P405ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | Automotive, AEC-Q101, OptiMOS™ | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | 10mm | ROHS3 Compliant | Contains Lead | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | 4.4mm | 9.25mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | DRAIN | Halogen Free | Single | 125W | 42 ns | -40V | 125W Tc | 80A | 0.0049Ohm | 73 ns | SILICON | P-Channel | 4.9m Ω @ 80A, 10V | 4V @ 250μA | 10300pF @ 25V | 151nC @ 10V | 24ns | 65 ns | 20V | -40V | 80A Tc | 40V | 64 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRF6898MTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | HEXFET® | Last Time Buy | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | No | 7 | DirectFET™ Isometric MX | No SVHC | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | BOTTOM | R-XBCC-N3 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 78W | 18 ns | 1.6V | 2.1W Ta 78W Tc | 35A | SWITCHING | 24 ns | SILICON | N-Channel | 1.1m Ω @ 35A, 10V | 2.1V @ 100μA | 5435pF @ 13V | 62nC @ 4.5V | 46ns | 19 ns | 16V | 25V | Schottky Diode (Body) | 35A Ta 213A Tc | 280A | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRFS7540TRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | HEXFET®, StrongIRFET™ | Active | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 9.65mm | Surface Mount | 3.949996g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | 1 | DRAIN | Single | 160W | 12 ns | 3.7V | 160W Tc | 110A | SWITCHING | 60V | 58 ns | SILICON | N-Channel | 5.1m Ω @ 65A, 10V | 3.7V @ 100μA | 4555pF @ 25V | 130nC @ 10V | 76ns | 56 ns | 20V | 110A Tc | 60V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| AUIRFZ48N | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Through Hole | Tube | 2011 | HEXFET® | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | 1 | 160W | 12 ns | 160W Tc | 69A | 37 ns | N-Channel | 14m Ω @ 40A, 10V | 4V @ 100μA | 1900pF @ 25V | 63nC @ 10V | 62ns | 4.5 ns | 20V | 55V | 69A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB065N10N3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 19 ns | 100V | 150W Tc | 80A | SWITCHING | 0.0065Ohm | 37 ns | SILICON | N-Channel | 6.5m Ω @ 80A, 10V | 3.5V @ 90μA | 4910pF @ 50V | 64nC @ 10V | 9 ns | 20V | 80A Tc | 160 mJ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFN8405TR | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2014 | HEXFET® | Not For New Designs | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 8 | 8-PowerTDFN | No SVHC | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | 3.9V | 1.6mOhm | PQFN (5x6) | 3.3W Ta 136W Tc | 95A | N-Channel | 2mOhm @ 50A, 10V | 3.9V @ 100μA | 5142pF @ 25V | 117nC @ 10V | 95A Tc | 40V | 5.142nF | 10V | ±20V | 2 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF7736M2TR | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | HEXFET® | Active | 1 (Unlimited) | 5 | ROHS3 Compliant | Lead Free | No | 9 | HIGH RELIABILITY | DirectFET™ Isometric M4 | No SVHC | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | R-XBCC-N5 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 63W | 21 ns | 3V | 2.5W Ta 63W Tc | 22A | SWITCHING | 0.003Ohm | 39 ns | SILICON | N-Channel | 3m Ω @ 65A, 10V | 4V @ 150μA | 4267pF @ 25V | 108nC @ 10V | 43ns | 27 ns | 20V | 40V | 22A Ta 108A Tc | 432A | 286 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IPI80N08S207AKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Through Hole | Tube | 2006 | OptiMOS™ | Obsolete | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-262-3 Long Leads, I2Pak, TO-262AA | not_compliant | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | SINGLE WITH BUILT-IN DIODE | TO-262AB | Halogen Free | 75V | 300W Tc | 80A | 0.0074Ohm | SILICON | N-Channel | 7.4m Ω @ 80A, 10V | 4V @ 250μA | 4700pF @ 25V | 180nC @ 10V | 80A Tc | 810 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRL3705Z | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Through Hole | Tube | 2010 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 10.67mm | ROHS3 Compliant | No | 3 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | TO-220-3 | 9.02mm | 4.83mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 130W | 17 ns | 130W Tc | 75A | SWITCHING | 0.008Ohm | 26 ns | SILICON | N-Channel | 8m Ω @ 52A, 10V | 3V @ 250μA | 2880pF @ 25V | 60nC @ 5V | 240ns | 83 ns | 16V | 55V | 75A Tc | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF6215 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Through Hole | Tube | 2006 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 10.66mm | ROHS3 Compliant | No | 3 | AVALANCHE RATED | TO-220-3 | No SVHC | 16.51mm | 4.82mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Other Transistors | 1 | TO-220AB | DRAIN | Single | 110W | 14 ns | -2V | 110W Tc | 13A | SWITCHING | 0.29Ohm | 53 ns | SILICON | P-Channel | 290m Ω @ 6.6A, 10V | 4V @ 250μA | 860pF @ 25V | 66nC @ 10V | 36ns | 37 ns | 20V | -150V | 13A Tc | 150V | 44A | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IPP80N06S2L11AKSA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Through Hole | Tube | 2010 | OptiMOS™ | yes | Obsolete | 1 (Unlimited) | 3 | ROHS3 Compliant | Contains Lead | No | 3 | LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | Halogen Free | 11 ns | 55V | 158W Tc | 80A | 0.0147Ohm | 46 ns | SILICON | N-Channel | 10.7m Ω @ 40A, 10V | 2V @ 93μA | 2075pF @ 25V | 80nC @ 10V | 32ns | 13 ns | 20V | 80A Tc | 280 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPL65R340CFDAUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | CoolMOS™ | Not For New Designs | 2A (4 Weeks) | EAR99 | ROHS3 Compliant | Contains Lead | 4 | 4-PowerTSFN | not_compliant | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 2 | 1 | Halogen Free | 11 ns | 650V | 104.2W Tc | 10.9A | 45 ns | N-Channel | 340m Ω @ 4.4A, 10V | 4.5V @ 400μA | 1100pF @ 100V | 41nC @ 10V | 7.5ns | 7 ns | 20V | 650V | 10.9A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP70N12S3L12AKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 2016 | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | not_compliant | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | THROUGH-HOLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | AEC-Q101 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | N-CHANNEL | 0.0158Ohm | 120V | METAL-OXIDE SEMICONDUCTOR | SILICON | 70A | 280A | 410 mJ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF1405STRRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Tape & Reel (TR) | 2004 | HEXFET® | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 200W Tc | SWITCHING | 0.0053Ohm | 55V | SILICON | N-Channel | 5.3m Ω @ 101A, 10V | 4V @ 250μA | 5480pF @ 25V | 260nC @ 10V | 75A | 131A Tc | 55V | 680A | 590 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRFIB41N15DPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Through Hole | Tube | 2003 | HEXFET® | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | 10.6172mm | ROHS3 Compliant | Lead Free | 41A | No | 3 | AVALANCHE RATED | TO-220-3 Full Pack | No SVHC | 16.12mm | 4.826mm | Through Hole | -55°C~175°C TJ | 150V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | 40 | FET General Purpose Power | 1 | TO-220AB | ISOLATED | Single | 200W | 16 ns | 5.5V | 48W Tc | 41A | SWITCHING | 0.045Ohm | 25 ns | SILICON | N-Channel | 45m Ω @ 25A, 10V | 5.5V @ 250μA | 2520pF @ 25V | 110nC @ 10V | 63ns | 14 ns | 30V | 150V | 150V | 5.5 V | 41A Tc | 470 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| AUIRFR8405TRL | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Tape & Reel (TR) | 2015 | HEXFET® | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | IRFR8405 | YES | FET General Purpose Power | Single | 163W Tc | N-Channel | 1.98m Ω @ 90A, 10V | 3.9V @ 100μA | 5171pF @ 25V | 155nC @ 10V | 100A | 100A Tc | 40V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFSL8405 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Through Hole | Tube | 2013 | HEXFET® | Active | 1 (Unlimited) | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | No | 3 | TO-262-3 Long Leads, I2Pak, TO-262AA | No SVHC | 9.65mm | 4.83mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | 1 | FET General Purpose Power | Single | 163W | 14 ns | 163W Tc | 120A | 55 ns | N-Channel | 2.3m Ω @ 100A, 10V | 3.9V @ 100μA | 5193pF @ 25V | 161nC @ 10V | 128ns | 77 ns | 20V | 3 V | 120A Tc | 40V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI80N06S207AKSA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Through Hole | Tube | 2010 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | No | 3 | TO-262-3 Long Leads, I2Pak, TO-262AA | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | 1 | SINGLE WITH BUILT-IN DIODE | 16 ns | 55V | 250W Tc | 80A | 0.0066Ohm | 61 ns | SILICON | N-Channel | 6.6m Ω @ 68A, 10V | 4V @ 180μA | 3400pF @ 25V | 110nC @ 10V | 37ns | 36 ns | 20V | 80A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6811STRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | HEXFET® | Last Time Buy | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | Copper, Silver, Tin | 6 | DirectFET™ Isometric SQ | 700μm | 3.7MOhm | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | R-XBCC-N2 | 1 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 2.1W | 8.7 ns | 2.1W Ta 32W Tc | 19A | 150°C | SWITCHING | 11 ns | SILICON | N-Channel | 3.7m Ω @ 19A, 10V | 2.1V @ 35μA | 1590pF @ 13V | 17nC @ 4.5V | 19ns | 5.5 ns | 16V | 25V | 74A | 19A Ta 74A Tc | 32 mJ | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||
| IPD90N06S4L06ATMA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | Automotive, AEC-Q101, OptiMOS™ | yes | Active | 1 (Unlimited) | 2 | 6.73mm | ROHS3 Compliant | 3 | ULTRA-LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | 2.41mm | 6.22mm | Surface Mount | 3.949996g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | 1 | DRAIN | Halogen Free | Single | 10 ns | 60V | 79W Tc | 90A | 50 ns | SILICON | N-Channel | 6.3m Ω @ 90A, 10V | 2.2V @ 40μA | 5680pF @ 25V | 75nC @ 10V | 3ns | 8 ns | 16V | 90A Tc | 67 mJ | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||
| IPB80N04S4L04ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | OptiMOS™ | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | Halogen Free | 7 ns | 40V | 71W Tc | 80A | 0.004Ohm | 22 ns | SILICON | N-Channel | 4m Ω @ 80A, 10V | 2.2V @ 35μA | 4690pF @ 25V | 60nC @ 10V | 12ns | 31 ns | 20V | 80A Tc | 100 mJ | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF7647S2TR | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | No | 7 | DirectFET™ Isometric SC | No SVHC | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | BOTTOM | R-XBCC-N3 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | P-CHANNEL | 41W | 5.5 ns | 4V | 2.5W Ta 41W Tc | 5.9A | AMPLIFIER | 0.031Ohm | 7.9 ns | SILICON | N-Channel | 31m Ω @ 14A, 10V | 5V @ 50μA | 910pF @ 25V | 21nC @ 10V | 8.4ns | 4.6 ns | 20V | 100V | 24A | 5.9A Ta 24A Tc | 95A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| AUIRLL024ZTR | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | HEXFET® | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | No | 4 | TO-261-4, TO-261AA | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | FET General Purpose Power | 1 | Single | 1W | 8.6 ns | 1W Ta | 5A | 20 ns | N-Channel | 60m Ω @ 3A, 10V | 3V @ 250μA | 380pF @ 25V | 11nC @ 5V | 33ns | 15 ns | 16V | 5A | 5A Ta | 55V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6722MTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2007 | HEXFET® | Active | 3 (168 Hours) | 3 | EAR99 | 6.35mm | ROHS3 Compliant | No | 5 | DirectFET™ Isometric MP | 506μm | 5.05mm | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | R-XBCC-N3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 42W | 11 ns | 2.3W Ta 42W Tc | 13A | SWITCHING | 0.0077Ohm | 9.5 ns | SILICON | N-Channel | 7.7m Ω @ 13A, 10V | 2.4V @ 50μA | 1300pF @ 15V | 17nC @ 4.5V | 7.8ns | 6.1 ns | 20V | 30V | 13A Ta 56A Tc | 82 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRF6637TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 6.35mm | ROHS3 Compliant | Lead Free | 14A | No | 5 | DirectFET™ Isometric MP | 506μm | 5.05mm | Surface Mount | -40°C~150°C TJ | 30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | R-XBCC-N3 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 89W | 12 ns | 2.3W Ta 42W Tc | 14mA | SWITCHING | 0.0077Ohm | 14 ns | SILICON | N-Channel | 7.7m Ω @ 14A, 10V | 2.35V @ 250μA | 1330pF @ 15V | 17nC @ 4.5V | 15ns | 3.8 ns | 20V | 30V | 14A Ta 59A Tc | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRLR3110ZTRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 6.7056mm | ROHS3 Compliant | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW ON RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.26mm | 6.22mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 140W | 24 ns | 140W Tc | 42A | SWITCHING | 33 ns | SILICON | N-Channel | 14m Ω @ 38A, 10V | 2.5V @ 100μA | 3980pF @ 25V | 48nC @ 4.5V | 110ns | 48 ns | 16V | 100V | 42A Tc | 250A | 4.5V 10V | ±16V |