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RF/IF & RFID
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Vishay Siliconix(2369)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Manufacturer Package Identifier | Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Voltage | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Drain to Source Resistance | Supplier Device Package | Reverse Recovery Time | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Feedback Cap-Max (Crss) | Input Capacitance | Turn On Time-Max (ton) | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max | Turn Off Time-Max (toff) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SI4778DY-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 15 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | TrenchFET® | Obsolete | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | No | 8 | 8-SOIC (0.154, 3.90mm Width) | 1.5mm | 4mm | Surface Mount | 186.993455mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 30 | 8 | 1 | 1 | Single | 2.4W | 15 ns | 2.4W Ta 5W Tc | 8A | SWITCHING | 0.023Ohm | 20 ns | SILICON | N-Channel | 23m Ω @ 7A, 10V | 2.2V @ 250μA | 680pF @ 13V | 18nC @ 10V | 50ns | 10 ns | 16V | 25V | 8A | 8A Tc | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||
| SQ2362ES-T1_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2017 | Automotive, AEC-Q101, TrenchFET® | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-236-3, SC-59, SOT-23-3 | No SVHC | 1.12mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | 3W | 6 ns | 1.5V | 3W Tc | 4.3A | 175°C | 0.068Ohm | 14 ns | SILICON | N-Channel | 95m Ω @ 4.5A, 10V | 2.5V @ 250μA | 550pF @ 30V | 12nC @ 10V | 20ns | 18 ns | 20V | 60V | 4.3A Tc | 26 pF | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SI2343DS-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 33 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | TrenchFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 3.04mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-236-3, SC-59, SOT-23-3 | Unknown | 1.12mm | 1.4mm | 53mOhm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 30 | 3 | 1 | Other Transistors | 1 | Single | 750mW | 10 ns | -1V | 750mW Ta | -4A | 150°C | SWITCHING | 31 ns | SILICON | P-Channel | 53m Ω @ 4A, 10V | 3V @ 250μA | 540pF @ 15V | 21nC @ 10V | 15ns | 15 ns | 20V | -30V | -1 V | 3.1A Ta | 30V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| SI8461DB-T2-E1 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 15 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | yes | Obsolete | 1 (Unlimited) | 4 | EAR99 | ROHS3 Compliant | Lead Free | No | 4 | 4-XFBGA, CSPBGA | Unknown | 100mOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | BOTTOM | BALL | 260 | 30 | 4 | 1 | Other Transistors | 1 | Single | 780mW | 15 ns | -1V | 780mW Ta 1.8W Tc | -3.7A | SWITCHING | 35 ns | SILICON | P-Channel | 100m Ω @ 1.5A, 4.5V | 1V @ 250μA | 610pF @ 10V | 24nC @ 8V | 25ns | 10 ns | 8V | -20V | 2.5A | 20V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||
| SI7464DP-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 4.9mm | ROHS3 Compliant | No | 8 | PowerPAK® SO-8 | Unknown | 1.04mm | 5.89mm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | FLAT | 8 | R-PDSO-F5 | 1 | 1 | DRAIN | Single | 1.8W | 10 ns | 1.8W Ta | 2.8A | SWITCHING | 0.24Ohm | 15 ns | SILICON | N-Channel | 240m Ω @ 2.8A, 10V | 4V @ 250μA | 18nC @ 10V | 12ns | 12 ns | 20V | 200V | 4 V | 1.8A Ta | 8A | 0.45 mJ | 35ns | 6V 10V | ±20V | 50ns | ||||||||||||||||||||||||||||||||||||
| SIR440DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 4.9mm | ROHS3 Compliant | Lead Free | 8 | PowerPAK® SO-8 | Unknown | 1.04mm | 5.89mm | 1.55mOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | DUAL | C BEND | 260 | 40 | 8 | R-XDSO-C5 | 1 | FET General Purpose Powers | Not Qualified | 1 | DRAIN | Single | 6.25W | 45 ns | 2.5V | 6.25W Ta 104W Tc | 60A | SWITCHING | 81 ns | SILICON | N-Channel | 1.55m Ω @ 20A, 10V | 2.5V @ 250μA | 6000pF @ 10V | 150nC @ 10V | 29ns | 48 ns | 20V | 20V | 2.5 V | 47A | 60A Tc | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| SI7634BDP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 4.9mm | ROHS3 Compliant | Lead Free | No | 8 | PowerPAK® SO-8 | Unknown | 1.04mm | 5.89mm | 5.4mOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | DUAL | C BEND | 260 | 30 | 8 | R-XDSO-C5 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 5W | 30 ns | 1.4V | 5W Ta 48W Tc | 22.5A | 34 ns | SILICON | N-Channel | 5.4m Ω @ 15A, 10V | 2.6V @ 250μA | 3150pF @ 15V | 68nC @ 10V | 12ns | 12 ns | 20V | 30V | 40A | 40A Tc | 70A | 45 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| SI4124DY-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2014 | TrenchFET® | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | No | 8 | 8-SOIC (0.154, 3.90mm Width) | 1.55mm | 4mm | Surface Mount | 186.993455mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 8 | 1 | FET General Purpose Powers | 1 | Single | 2.5W | 30 ns | 2.5W Ta 5.7W Tc | 13.6A | SWITCHING | 0.0075Ohm | 40V | 38 ns | SILICON | N-Channel | 7.5m Ω @ 14A, 10V | 3V @ 250μA | 3540pF @ 20V | 77nC @ 10V | 14ns | 11 ns | 20V | 20.5A | 20.5A Tc | 40V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SI7110DN-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 3.05mm | ROHS3 Compliant | No | 8 | PowerPAK® 1212-8 | Unknown | 1.04mm | 3.05mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 30 | 8 | S-XDSO-C5 | 1 | FET General Purpose Powers | 1 | DRAIN | Single | 12 ns | 2.5V | 1.5W Ta | 21.1A | SWITCHING | 0.0053Ohm | 36 ns | SILICON | N-Channel | 5.3m Ω @ 21.1A, 10V | 2.5V @ 250μA | 21nC @ 4.5V | 10ns | 10 ns | 20V | 20V | 13.5A Ta | 60A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SQJQ100E-T1_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | Automotive, AEC-Q101, TrenchFET® | Active | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 8-PowerTDFN | 2.03mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | C14-0891-SINGLE | 1 | 150W | 22 ns | 900μOhm | PowerPAK® 8 x 8 | 150W Tc | 200A | 175°C | 52 ns | N-Channel | 1.5mOhm @ 20A, 10V | 3.5V @ 250μA | 14780pF @ 25V | 165nC @ 10V | 20V | 40V | 200A Tc | 40V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7434DP-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 4.9mm | ROHS3 Compliant | Lead Free | No | 8 | PowerPAK® SO-8 | 1.04mm | 5.89mm | 155MOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 40 | 8 | R-XDSO-C5 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 1.9W | 16 ns | 1.9W Ta | 3.8A | SWITCHING | 250V | 47 ns | SILICON | N-Channel | 155m Ω @ 3.8A, 10V | 4V @ 250μA | 50nC @ 10V | 23ns | 23 ns | 20V | 2.3A | 2.3A Ta | 250V | 40A | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SIR804DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | TrenchFET® | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Lead Free | No | 8 | PowerPAK® SO-8 | Unknown | 7.2mOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | C BEND | 260 | 40 | 8 | R-XDSO-C5 | 1 | 1 | DRAIN | Single | 6.25W | 11 ns | 1.2V | 6.25W Ta 104W Tc | 60A | SWITCHING | 38 ns | SILICON | N-Channel | 7.2m Ω @ 20A, 10V | 3V @ 250μA | 2450pF @ 50V | 76nC @ 10V | 9ns | 11 ns | 20V | 1.2 V | 60A Tc | 100V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SI7658ADP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 4.9mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | PowerPAK® SO-8 | Unknown | 1.04mm | 5.89mm | 2.2mOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | C BEND | 260 | 30 | 8 | R-XDSO-C5 | 1 | FET General Purpose Powers | 1 | DRAIN | Single | 5.4W | 45 ns | 2.5V | 5.4W Ta 83W Tc | 60A | SWITCHING | 30V | 60 ns | SILICON | N-Channel | 2.2m Ω @ 20A, 10V | 2.5V @ 250μA | 4590pF @ 15V | 110nC @ 10V | 18ns | 30 ns | 20V | 36A | 60A Tc | 30V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| SQ4840EY-T1_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2014 | TrenchFET® | Active | 1 (Unlimited) | 175°C | -55°C | 5mm | ROHS3 Compliant | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Unknown | 1.55mm | 4mm | Surface Mount | 186.993455mg | -55°C~175°C TJ | MOSFET (Metal Oxide) | 1 | 1 | 1.56W | 17.5 ns | 2V | 9mOhm | 8-SO | 7.1W Tc | 20.7A | 38 ns | N-Channel | 9mOhm @ 14A, 10V | 2.5V @ 250μA | 2440pF @ 20V | 62nC @ 10V | 9.5ns | 9.5 ns | 20V | 40V | 2 V | 20.7A Tc | 40V | 2.44nF | 4.5V 10V | ±20V | 9 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||
| SI7192DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | SMD/SMT | EAR99 | 4.9mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | PowerPAK® SO-8 | Unknown | 1.04mm | 5.89mm | 1.9mOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | C BEND | 260 | 30 | 8 | R-XDSO-C5 | 1 | FET General Purpose Powers | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 6.25W | 41 ns | 6.25W Ta 104W Tc | 60A | SWITCHING | 86 ns | SILICON | N-Channel | 1.9m Ω @ 20A, 10V | 2.5V @ 250μA | 5800pF @ 15V | 135nC @ 10V | 26ns | 32 ns | 20V | 30V | 1 V | 42A | 60A Tc | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| SUM65N20-30-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | TrenchFET® | yes | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 10.41mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 5.08mm | 9.65mm | 30mOhm | Surface Mount | 1.437803g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | 4 | R-PSSO-G2 | 1 | FET General Purpose Powers | 1 | Single | 3.75W | 24 ns | 2V | 130 ns | 3.75W Ta 375W Tc | 65A | 175°C | SWITCHING | 45 ns | SILICON | N-Channel | 30m Ω @ 30A, 10V | 4V @ 250μA | 5100pF @ 25V | 130nC @ 10V | 220ns | 200 ns | 20V | 200V | 200V | 4 V | 65A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IRF820PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 1997 | Active | 1 (Unlimited) | 150°C | -55°C | 10.41mm | ROHS3 Compliant | Lead Free | 2.5A | 3 | TO-220-3 | Unknown | 9.01mm | 4.7mm | 3Ohm | Through Hole | 6.000006g | -55°C~150°C TJ | 500V | MOSFET (Metal Oxide) | 1 | 1 | Single | 50W | 8 ns | 4V | 3Ohm | TO-220AB | 50W Tc | 520 ns | 2.5A | 33 ns | N-Channel | 3Ohm @ 1.5A, 10V | 4V @ 250μA | 360pF @ 25V | 24nC @ 10V | 8.6ns | 16 ns | 20V | 500V | 4 V | 2.5A Tc | 500V | 360pF | 10V | ±20V | 3 Ω | ||||||||||||||||||||||||||||||||||||||||||
| SI3460DDV-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | TrenchFET® | yes | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | Lead Free | No | 6 | SOT-23-6 Thin, TSOT-23-6 | Unknown | 28mOhm | Surface Mount | 19.986414mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | DUAL | GULL WING | 260 | 30 | 1 | 1 | Single | 1.7W | 6 ns | 400mV | 1.7W Ta 2.7W Tc | 7.9A | SWITCHING | 20V | 21 ns | SILICON | N-Channel | 28m Ω @ 5.1A, 4.5V | 1V @ 250μA | 666pF @ 10V | 18nC @ 8V | 11ns | 8 ns | 8V | 7.9A Tc | 20V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||
| SISA10DN-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | TrenchFET® | Active | 1 (Unlimited) | 5 | EAR99 | 3.4mm | ROHS3 Compliant | No | 8 | PowerPAK® 1212-8 | Unknown | 1.12mm | 3.4mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FLAT | 240 | 40 | S-PDSO-F5 | 1 | FET General Purpose Powers | 1 | DRAIN | Dual | 3.6W | 20 ns | 1.1V | 3.6W Ta 39W Tc | 30A | SWITCHING | 0.0037Ohm | 27 ns | SILICON | N-Channel | 3.7m Ω @ 10A, 10V | 2.2V @ 250μA | 2425pF @ 15V | 51nC @ 10V | 20 ns | 20V | 30V | 30A Tc | 20 mJ | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||
| SI7613DN-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2007 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 3.05mm | ROHS3 Compliant | No | 8 | PowerPAK® 1212-8 | Unknown | 1.04mm | 3.05mm | Surface Mount | -50°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 40 | 8 | S-XDSO-C5 | 1 | Other Transistors | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.8W | 14 ns | -1V | 3.8W Ta 52.1W Tc | 17A | SWITCHING | 42 ns | SILICON | P-Channel | 8.7m Ω @ 17A, 10V | 2.2V @ 250μA | 2620pF @ 10V | 87nC @ 10V | 7ns | 9 ns | 16V | -20V | 35A | 35A Tc | 20V | 60A | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||
| SI3438DV-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | TrenchFET® | Active | 1 (Unlimited) | 6 | EAR99 | 3.05mm | ROHS3 Compliant | No | 6 | SOT-23-6 Thin, TSOT-23-6 | 1mm | 1.65mm | Surface Mount | 19.986414mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 6 | 1 | FET General Purpose Power | 1 | Single | 2W | 16 ns | 2W Ta 3.5W Tc | 5.5A | SWITCHING | 0.0355Ohm | 16 ns | SILICON | N-Channel | 35.5m Ω @ 5A, 10V | 3V @ 250μA | 640pF @ 20V | 20nC @ 10V | 17ns | 10 ns | 20V | 40V | 7.4A | 7.4A Tc | 20A | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SQJA02EP-T1_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | Automotive, AEC-Q101, TrenchFET® | Active | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | PowerPAK® SO-8 | 1.267mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | 1 | 68W | 19 ns | 4mOhm | PowerPAK® SO-8 | 68W Tc | 75A | 175°C | 30 ns | N-Channel | 4.8mOhm @ 10A, 10V | 3.5V @ 250μA | 4700pF @ 25V | 80nC @ 10V | 20V | 60V | 60A Tc | 60V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR460DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 4.9mm | ROHS3 Compliant | Lead Free | No | 8 | PowerPAK® SO-8 | Unknown | 1.04mm | 5.89mm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 40 | 8 | R-XDSO-C5 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 5W | 25 ns | 1V | 5W Ta 48W Tc | 40A | SWITCHING | 0.0047Ohm | 28 ns | SILICON | N-Channel | 4.7m Ω @ 15A, 10V | 2.4V @ 250μA | 2071pF @ 15V | 54nC @ 10V | 16ns | 12 ns | 20V | 30V | 1 V | 24.3A | 40A Tc | 70A | 45 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| SUD35N10-26P-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | Lead Free | Tin | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | unknown | 26MOhm | Surface Mount | 1.437803g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | R-PSSO-G2 | 1 | 1 | TO-252AA | DRAIN | Single | 10 ns | 8.3W Ta 83W Tc | 35A | SWITCHING | 15 ns | SILICON | N-Channel | 26m Ω @ 12A, 10V | 4.4V @ 250μA | 2000pF @ 12V | 47nC @ 10V | 10ns | 10 ns | 20V | 35A Tc | 100V | 40A | 55 mJ | 7V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SI4842BDY-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | TrenchFET® | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | Lead Free | Tin | 8 | 8-SOIC (0.154, 3.90mm Width) | Unknown | 1.55mm | 4mm | 4.2mOhm | Surface Mount | 186.993455mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 20 | 8 | 1 | FET General Purpose Powers | Not Qualified | 1 | Single | 6.25W | 125 ns | 3W Ta 6.25W Tc | 28A | 38 ns | SILICON | N-Channel | 4.2m Ω @ 20A, 10V | 3V @ 250μA | 3650pF @ 15V | 100nC @ 10V | 190ns | 13 ns | 20V | 30V | 1.4 V | 28A Tc | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRF9Z30PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2007 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.41mm | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 | Unknown | 9.01mm | 4.7mm | 140mOhm | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | 3 | 1 | 1 | TO-220AB | DRAIN | Single | 74W | 12 ns | -4V | 74W Tc | 18A | SWITCHING | 21 ns | SILICON | P-Channel | 140m Ω @ 9.3A, 10V | 4V @ 250μA | 900pF @ 25V | 39nC @ 10V | 110ns | 64 ns | 20V | -50V | 18A Tc | 50V | 60A | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRFP9140PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2011 | Active | 1 (Unlimited) | 175°C | -55°C | 15.87mm | ROHS3 Compliant | Lead Free | -21A | No | 3 | TO-247-3 | Unknown | 20.7mm | 5.31mm | 200mOhm | Through Hole | 38.000013g | -55°C~175°C TJ | -100V | MOSFET (Metal Oxide) | 1 | 1 | Single | 180W | 16 ns | -4V | 200mOhm | TO-247-3 | 180W Tc | 260 ns | -21A | 34 ns | P-Channel | 200mOhm @ 13A, 10V | 4V @ 250μA | 1400pF @ 25V | 61nC @ 10V | 73ns | 57 ns | 20V | -100V | -4 V | 21A Tc | 100V | 1.4nF | 10V | ±20V | 200 mΩ | |||||||||||||||||||||||||||||||||||||||||
| IRFBC40PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 11 Weeks | Through Hole | Tube | 2008 | Active | 1 (Unlimited) | 150°C | -55°C | 10.41mm | ROHS3 Compliant | Lead Free | Tin | 6.2A | 3 | TO-220-3 | Unknown | 9.01mm | 4.7mm | 1.2Ohm | Through Hole | 6.000006g | -55°C~150°C TJ | 600V | MOSFET (Metal Oxide) | 62A | 1 | 600V | 1 | Single | 125W | 13 ns | 4V | 1.2Ohm | TO-220AB | 125W Tc | 940 ns | 6.2A | 55 ns | N-Channel | 1.2Ohm @ 3.7A, 10V | 4V @ 250μA | 1300pF @ 25V | 60nC @ 10V | 18ns | 20 ns | 20V | 600V | 4 V | 6.2A Tc | 600V | 1.3nF | 10V | ±20V | 1.2 Ω | |||||||||||||||||||||||||||||||||||||||
| SUP70060E-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Through Hole | Bulk | 2017 | ThunderFET® | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | 200W Tc | 131A | SWITCHING | 0.0064Ohm | 100V | SILICON | N-Channel | 5.8m Ω @ 30A, 10V | 4V @ 250μA | 3330pF @ 50V | 81nC @ 10V | 131A Tc | 100V | 240A | 125 mJ | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQM200N04-1M7L_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | TrenchFET® | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | Lead Free | No | 7 | TO-263-7, D2Pak (6 Leads + Tab) | Unknown | Surface Mount | 1.59999g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | R-PSSO-G6 | 1 | 1 | Single | 22 ns | 2V | 375W Tc | 200A | 40V | 70 ns | SILICON | N-Channel | 1.7m Ω @ 30A, 10V | 2.5V @ 250μA | 11168pF @ 20V | 291nC @ 10V | 17ns | 16 ns | 20V | 200A Tc | 40V | 600A | 4.5V 10V | ±20V |