Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Manufacturer Package Identifier | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Number of Elements | Configuration | Case Connection | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | FET Feature | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Input Capacitance | Turn On Time-Max (ton) | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max | Turn Off Time-Max (toff) |
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SQJ411EP-T1_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | Automotive, AEC-Q101, TrenchFET® | Active | 1 (Unlimited) | 4 | ROHS3 Compliant | PowerPAK® SO-8 | unknown | 1.267mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | YES | R-PSSO-G4 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 68W | 32 ns | 68W Tc | -60A | 175°C | 0.0058Ohm | 198 ns | SILICON | P-Channel | 5.8m Ω @ 15A, 4.5V | 1.5V @ 250μA | 9100pF @ 6V | 150nC @ 4.5V | 8V | -12V | 52A | 60A Tc | 12V | 45 mJ | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||
SI7172DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2017 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 4.9mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | PowerPAK® SO-8 | Unknown | 1.04mm | 5.89mm | 70mOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | C BEND | 260 | 30 | 8 | R-XDSO-C5 | 1 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 5.4W | 15 ns | 4V | 5.4W Ta 96W Tc | 25A | SWITCHING | 26 ns | SILICON | N-Channel | 70m Ω @ 5.9A, 10V | 4V @ 250μA | 2250pF @ 100V | 77nC @ 10V | 11ns | 9 ns | 20V | 200V | 5.9A | 25A Tc | 30A | 6V 10V | ±20V | ||||||||||||||||||||||||||||||
SI4838DY-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | TrenchFET® | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | Lead Free | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Unknown | 1.55mm | 4mm | 3mOhm | Surface Mount | 186.993455mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 8 | 1 | FET General Purpose Powers | 1 | Single | 1.6W | 40 ns | 1.6W Ta | 25A | 140 ns | SILICON | N-Channel | 3m Ω @ 25A, 4.5V | 600mV @ 250μA (Min) | 60nC @ 4.5V | 40ns | 70 ns | 8V | 12V | 600 mV | 17A Ta | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||
SI7148DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Lead Free | No | 8 | AVALANCHE RATED | PowerPAK® SO-8 | Unknown | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Pure Matte Tin (Sn) | DUAL | FLAT | R-PDSO-F5 | 1 | 1 | DRAIN | Single | 2V | 5.4W Ta 96W Tc | 28A | SWITCHING | SILICON | N-Channel | 11m Ω @ 15A, 10V | 2.5V @ 250μA | 2900pF @ 35V | 100nC @ 10V | 20V | 75V | 2 V | 28A Tc | 60A | 96ns | 10V | ±20V | 90ns | |||||||||||||||||||||||||||||||||||||||||
SQM35N30-97_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | Automotive, AEC-Q101, TrenchFET® | Active | 1 (Unlimited) | 2 | EAR99 | Non-RoHS Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | 375W Tc | 0.097Ohm | 300V | SILICON | N-Channel | 97m Ω @ 10A, 10V | 3.5V @ 250μA | 5650pF @ 25V | 130nC @ 10V | 35A | 35A Tc | 300V | 75A | 54 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
SI7738DP-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 4.9mm | ROHS3 Compliant | No | 8 | PowerPAK® SO-8 | 1.04mm | 5.89mm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 40 | 8 | R-XDSO-C5 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 5.4W | 15 ns | 5.4W Ta 96W Tc | 7.7A | SWITCHING | 25 ns | SILICON | N-Channel | 38m Ω @ 7.7A, 10V | 4V @ 250μA | 2100pF @ 75V | 53nC @ 10V | 10ns | 10 ns | 20V | 150V | 30A | 30A Tc | 30A | 45 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||
SI7174DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | SMD/SMT | EAR99 | 4.9mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | PowerPAK® SO-8 | Unknown | 1.04mm | 5.89mm | 7mOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | C BEND | 260 | 30 | 8 | R-XDSO-C5 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 6.25W | 21 ns | 4.5V | 6.25W Ta 104W Tc | 60A | SWITCHING | 38 ns | SILICON | N-Channel | 7m Ω @ 10A, 10V | 4.5V @ 250μA | 2770pF @ 40V | 72nC @ 10V | 11ns | 12 ns | 20V | 75V | 4.5 V | 60A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||
SIHP22N60AE-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tube | E | Active | 1 (Unlimited) | ROHS3 Compliant | TO-220-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | 179W Tc | N-Channel | 180m Ω @ 11A, 10V | 4V @ 250μA | 1451pF @ 100V | 96nC @ 10V | 20A Tc | 600V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI4866DY-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | TrenchFET® | Active | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | Lead Free | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Unknown | 1.55mm | 4mm | 5.5mOhm | Surface Mount | 186.993455mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | DUAL | GULL WING | 8 | 1 | 1 | Single | 1.6W | 28 ns | 1.6W Ta | 17A | SWITCHING | 82 ns | SILICON | N-Channel | 5.5m Ω @ 17A, 4.5V | 600mV @ 250μA (Min) | 30nC @ 4.5V | 32ns | 35 ns | 8V | 12V | 600 mV | 11A Ta | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||
SQM70060EL_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | Automotive, AEC-Q101, TrenchFET® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | unknown | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | 166W Tc | 0.0059Ohm | 100V | SILICON | N-Channel | 5.9m Ω @ 30A, 10V | 2.5V @ 250μA | 5500pF @ 25V | 100nC @ 10V | 67A | 75A Tc | 100V | 180A | 180 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
SIR826ADP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Digi-Reel® | 2013 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Lead Free | Tin | No | 8 | PowerPAK® SO-8 | Unknown | 1.12mm | 5.5mOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | S17-0173-Single | DUAL | C BEND | 8 | R-PDSO-C5 | 1 | 1 | DRAIN | Single | 6.25W | 9 ns | 1.2V | 6.25W Ta 104W Tc | 23.8A | 150°C | SWITCHING | 34 ns | SILICON | N-Channel | 5.5m Ω @ 20A, 10V | 2.8V @ 250μA | 2800pF @ 40V | 86nC @ 10V | 15ns | 8 ns | 20V | 80V | 60A | 60A Tc | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
SIA811ADJ-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | LITTLE FOOT® | yes | Active | 1 (Unlimited) | 6 | EAR99 | 2.05mm | ROHS3 Compliant | No | 6 | PowerPAK® SC-70-6 Dual | 750μm | 2.05mm | Surface Mount | 28.009329mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | 260 | 40 | 6 | 1 | Other Transistors | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 1.8W | 15 ns | 1.8W Ta 6.5W Tc | 3.2A | SWITCHING | 20 ns | SILICON | P-Channel | 116m Ω @ 2.8A, 4.5V | 1V @ 250μA | 345pF @ 10V | 13nC @ 8V | 45ns | 10 ns | 8V | -20V | Schottky Diode (Isolated) | 4.5A | 4.5A Tc | 20V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||
SI2307BDS-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | TrenchFET® | yes | Active | 1 (Unlimited) | 3 | SMD/SMT | EAR99 | 3.04mm | ROHS3 Compliant | No | 3 | TO-236-3, SC-59, SOT-23-3 | No SVHC | 1.02mm | 1.4mm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 3 | 1 | Other Transistors | 1 | Single | 750mW | 9 ns | 750mW Ta | 2.5A | 0.078Ohm | 25 ns | SILICON | P-Channel | 78m Ω @ 3.2A, 10V | 3V @ 250μA | 380pF @ 15V | 15nC @ 10V | 12ns | 12 ns | 20V | -30V | 30V | 2.5A Ta | 10V | ±20V | |||||||||||||||||||||||||||||||||||
SI2329DS-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2014 | TrenchFET® | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | No | 3 | TO-236-3, SC-59, SOT-23-3 | No SVHC | 1.12mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 3 | 1 | Other Transistors | 1 | SINGLE WITH BUILT-IN DIODE | 1.25W | 20 ns | -350mV | 2.5W Tc | -5.3A | 150°C | SWITCHING | 46 ns | SILICON | P-Channel | 30m Ω @ 5.3A, 4.5V | 800mV @ 250μA | 1485pF @ 4V | 29nC @ 4.5V | 22ns | 20 ns | 5V | -8V | 6A | 6A Tc | 8V | 1.2V 4.5V | ±5V | ||||||||||||||||||||||||||||||||||||
SI9407BDY-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2011 | TrenchFET® | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | Lead Free | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.75mm | 4mm | 120mOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 8 | 1 | Other Transistors | 1 | Single | 2.4W | 10 ns | -3V | 2.4W Ta 5W Tc | -4.7A | 150°C | SWITCHING | 35 ns | SILICON | P-Channel | 120m Ω @ 3.2A, 10V | 3V @ 250μA | 600pF @ 30V | 22nC @ 10V | 70ns | 30 ns | 20V | -60V | 4.7A Tc | 60V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
IRF9640PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2014 | Active | 1 (Unlimited) | 150°C | -55°C | 10.41mm | ROHS3 Compliant | Lead Free | Tin | -11A | No | 3 | TO-220-3 | Unknown | 19.89mm | 4.7mm | 500mOhm | Through Hole | 6.000006g | -55°C~150°C TJ | -200V | MOSFET (Metal Oxide) | 1 | 1 | Single | 125W | 14 ns | -4V | 500mOhm | TO-220AB | 125W Tc | 300 ns | -11A | 150°C | 39 ns | P-Channel | 500mOhm @ 6.6A, 10V | 4V @ 250μA | 1200pF @ 25V | 44nC @ 10V | 43ns | 38 ns | 20V | -200V | -4 V | 11A Tc | 200V | 1.2nF | 10V | ±20V | 500 mΩ | ||||||||||||||||||||||||||||||||||||
SUM55P06-19L-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2007 | TrenchFET® | yes | Active | 1 (Unlimited) | 2 | EAR99 | 10.41mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Unknown | 4.83mm | 9.65mm | 19mOhm | Surface Mount | 1.437803g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 4 | R-PSSO-G2 | 1 | Other Transistors | 1 | Single | 125W | 12 ns | -1V | 3.75W Ta 125W Tc | -5.5A | SWITCHING | 80 ns | SILICON | P-Channel | 19m Ω @ 30A, 10V | 3V @ 250μA | 3500pF @ 25V | 115nC @ 10V | 15ns | 230 ns | 20V | -60V | 55A | 55A Tc | 60V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
IRFBG30PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 1997 | Active | 1 (Unlimited) | 150°C | -55°C | 10.41mm | ROHS3 Compliant | Lead Free | Tin | 3.1A | 3 | TO-220-3 | Unknown | 19.89mm | 4.7mm | 5Ohm | Through Hole | 6.000006g | -55°C~150°C TJ | 1kV | MOSFET (Metal Oxide) | 1 | 1 | Single | 125W | 12 ns | 2V | 5Ohm | TO-220AB | 125W Tc | 620 ns | 3.1A | 150°C | 89 ns | N-Channel | 5Ohm @ 1.9A, 10V | 4V @ 250μA | 980pF @ 25V | 80nC @ 10V | 25ns | 20 ns | 20V | 1kV | 4 V | 3.1A Tc | 1000V | 980pF | 10V | ±20V | 5 Ω | |||||||||||||||||||||||||||||||||||||
IRL520PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2014 | Active | 1 (Unlimited) | 175°C | -55°C | 10.54mm | ROHS3 Compliant | Lead Free | 9.2A | 3 | TO-220-3 | Unknown | 8.76mm | 4.7mm | 270mOhm | Through Hole | 6.000006g | -55°C~175°C TJ | 100V | MOSFET (Metal Oxide) | 1 | 1 | Single | 60W | 9.8 ns | 2V | 270mOhm | TO-220AB | 60W Tc | 9.2A | 21 ns | N-Channel | 270mOhm @ 5.5A, 5V | 2V @ 250μA | 490pF @ 25V | 12nC @ 5V | 64ns | 27 ns | 10V | 100V | 9.2A Tc | 100V | 490pF | 4V 5V | ±10V | 270 mΩ | |||||||||||||||||||||||||||||||||||||||||
IRFR9210TRPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tape & Reel (TR) | 2014 | Active | 1 (Unlimited) | 150°C | -55°C | 6.73mm | ROHS3 Compliant | Lead Free | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Unknown | 2.39mm | 6.22mm | 3Ohm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 1 | Single | 2.5W | 8 ns | -2V | 3Ohm | D-Pak | 2.5W Ta 25W Tc | 1.9A | 11 ns | P-Channel | 3Ohm @ 1.1A, 10V | 4V @ 250μA | 170pF @ 25V | 8.9nC @ 10V | 12ns | 13 ns | 20V | -200V | -2 V | 1.9A Tc | 200V | 170pF | 10V | ±20V | 3 Ω | |||||||||||||||||||||||||||||||||||||||||
SIRA32DP-T1-RE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | TrenchFET® Gen IV | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | PowerPAK® SO-8 | unknown | 1.17mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | S17-0173-Single | NOT SPECIFIED | NOT SPECIFIED | 1 | 5W | 14 ns | 65.7W Tc | 51A | 150°C | 24 ns | N-Channel | 1.2m Ω @ 15A, 10V | 2.2V @ 250μA | 4450pF @ 10V | 83nC @ 10V | 25V | 60A Tc | 4.5V 10V | +16V, -12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIA432DJ-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | TrenchFET® | Active | 1 (Unlimited) | 3 | EAR99 | 2.05mm | ROHS3 Compliant | No | 6 | PowerPAK® SC-70-6 | Unknown | 750μm | 2.05mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | DUAL | C BEND | 260 | 40 | 6 | S-PDSO-C3 | 1 | FET General Purpose Powers | Single | 15 ns | 3V | 3.5W Ta 19.2W Tc | 10.1A | 15 ns | N-Channel | 20m Ω @ 6A, 10V | 3V @ 250μA | 800pF @ 15V | 20nC @ 10V | 11ns | 10 ns | 20V | 12A Tc | 30V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
SQJA92EP-T1_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | Automotive, AEC-Q101, TrenchFET® | Active | 1 (Unlimited) | 4 | ROHS3 Compliant | PowerPAK® SO-8 | unknown | 1.267mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | YES | R-PSSO-G4 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 68W | 15 ns | 68W Tc | 57A | 175°C | 0.0095Ohm | 24 ns | SILICON | N-Channel | 9.5m Ω @ 10A, 10V | 3.5V @ 250μA | 2650pF @ 25V | 45nC @ 10V | 20V | 80V | 57A Tc | 54 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
SI7464DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | No | 8 | PowerPAK® SO-8 | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Pure Matte Tin (Sn) | DUAL | FLAT | 8 | R-PDSO-F5 | 1 | 1 | DRAIN | Single | 1.8W | 10 ns | 1.8W Ta | 1.8A | SWITCHING | 0.24Ohm | 15 ns | SILICON | N-Channel | 240m Ω @ 2.8A, 10V | 4V @ 250μA | 18nC @ 10V | 12ns | 15 ns | 20V | 200V | 1.8A Ta | 8A | 0.45 mJ | 35ns | 6V 10V | ±20V | 50ns | |||||||||||||||||||||||||||||||||||||||
SIR158DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 4.9mm | ROHS3 Compliant | Lead Free | No | 8 | PowerPAK® SO-8 | 1.04mm | 5.89mm | 1.8MOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 40 | 8 | R-PDSO-C5 | 1 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 5.4W | 28 ns | 5.4W Ta 83W Tc | 40A | SWITCHING | 47 ns | SILICON | N-Channel | 1.8m Ω @ 20A, 10V | 2.5V @ 250μA | 4980pF @ 15V | 130nC @ 10V | 36ns | 16 ns | 20V | 30V | 60A | 60A Tc | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
SI4842BDY-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | TrenchFET® | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Unknown | 1.55mm | 4mm | Surface Mount | 186.993455mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 30 | 8 | 1 | FET General Purpose Powers | 1 | Single | 125 ns | 3W Ta 6.25W Tc | 28A | 0.0042Ohm | 30V | 38 ns | SILICON | N-Channel | 4.2m Ω @ 20A, 10V | 3V @ 250μA | 3650pF @ 15V | 100nC @ 10V | 190ns | 13 ns | 20V | 20A | 28A Tc | 30V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
SI7370DP-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 4.9mm | ROHS3 Compliant | No | 8 | FAST SWITCHING | PowerPAK® SO-8 | No SVHC | 1.04mm | 5.89mm | 11MOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 40 | 8 | R-XDSO-C5 | 1 | FET General Purpose Powers | 1 | DRAIN | Single | 1.9W | 16 ns | 4V | 1.9W Ta | 15.8A | SWITCHING | 50 ns | SILICON | N-Channel | 11m Ω @ 12A, 10V | 4V @ 250μA | 57nC @ 10V | 12ns | 12 ns | 20V | 60V | 4 V | 9.6A | 9.6A Ta | 50A | 6V 10V | ±20V | ||||||||||||||||||||||||||||||
SIR688DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | TrenchFET® | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | No | 8 | PowerPAK® SO-8 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | C BEND | R-PDSO-C5 | 1 | DRAIN | Single | 5.4W | 5.4W Ta 83W Tc | 60A | SWITCHING | 0.0035Ohm | 60V | 31 ns | SILICON | N-Channel | 3.5m Ω @ 20A, 10V | 2.7V @ 250μA | 3105pF @ 30V | 66nC @ 10V | 8ns | 8 ns | 20V | 60A Tc | 60V | 45 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
SUD19N20-90-T4-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | TrenchFET® | yes | Active | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.39mm | 6.22mm | Surface Mount | 1.437803g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 4 | R-PSSO-G2 | 1 | 1 | DRAIN | Single | 15 ns | 3W Ta 136W Tc | 19A | SWITCHING | 30 ns | SILICON | N-Channel | 90m Ω @ 5A, 10V | 4V @ 250μA | 1800pF @ 25V | 51nC @ 10V | 50ns | 60 ns | 20V | 200V | 19A Tc | 40A | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
SIR802DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | TrenchFET® | Obsolete | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Lead Free | No | 8 | PowerPAK® SO-8 | Unknown | 5mOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | DUAL | C BEND | 260 | 40 | 8 | R-PDSO-C5 | 1 | FET General Purpose Powers | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 4.6W | 19 ns | 600mV | 4.6W Ta 27.7W Tc | 30A | SWITCHING | 36 ns | SILICON | N-Channel | 5m Ω @ 10A, 10V | 1.5V @ 250μA | 1785pF @ 10V | 32nC @ 10V | 14ns | 13 ns | 12V | 20V | 30A Tc | 70A | 20 mJ | 2.5V 10V | ±12V |
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