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Vishay Semiconductor Diodes Division(13890)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Diameter | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Reach Compliance Code | Mounting Type | Capacitance | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Operating Temperature (Max) | Subcategory | Qualification Status | Reference Standard | Diode Element Material | Number of Elements | Configuration | Diode Type | Output Current-Max | Application | Number of Phases | Rep Pk Reverse Voltage-Max | JEDEC-95 Code | Non-rep Pk Forward Current-Max | Forward Current | Forward Voltage | Case Connection | Max Surge Current | Element Configuration | Max Reverse Leakage Current | Supplier Device Package | Speed | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction | Max Reverse Voltage (DC) | Average Rectified Current | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Max Forward Surge Current (Ifsm) | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Reverse Current-Max | Reverse Recovery Time | Reverse Voltage | Reverse Voltage (DC) | Recovery Time | Capacitance @ Vr, F |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SSA33LHE3_A/H | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 11 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | Automotive, AEC-Q101 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -65°C | ROHS3 Compliant | FREE WHEELING DIODE, LOW POWER LOSS | DO-214AC, SMA | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | SSA33L | R-PDSO-C2 | SILICON | 1 | Schottky | 3A | EFFICIENCY | 1 | 3A | 380mV | Single | Fast Recovery =< 500ns, > 200mA (Io) | 500μA @ 30V | 450mV @ 3A | -65°C~150°C | 30V | 3A | 20mA | 30V | 75A | 30V | |||||||||||||||||||||||||||||||||||||
| V8PA6HM3/I | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | Active | 1 | 2 | EAR99 | Non-RoHS Compliant | FREE WHEELING DIODE, LOW POWER LOSS | DO-221BC, SMA Flat Leads Exposed Pad | unknown | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | NOT SPECIFIED | NOT SPECIFIED | YES | R-PDSO-F2 | 150°C | SILICON | 1 | SINGLE | Schottky | 3.2A | EFFICIENCY | 1 | 60V | 100A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | 600μA @ 60V | 630mV @ 8A | -40°C~150°C | 60V | 8A | 600μA | 1030pF @ 4V 1MHz | ||||||||||||||||||||||||||||||||||||||||
| BYG22A-M3/TR | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2017 | Automotive, AEC-Q101 | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | FREE WHEELING DIODE | DO-214AC, SMA | unknown | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 30 | R-PDSO-C2 | 150°C | SILICON | 1 | SINGLE | Avalanche | 2A | ULTRA FAST SOFT RECOVERY | 1 | 35A | Fast Recovery =< 500ns, > 200mA (Io) | 1μA @ 50V | 1.1V @ 2A | -55°C~150°C | 50V | 2A | 50V | 25 ns | ||||||||||||||||||||||||||||||||||||||||
| SB560A-E3/54 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount, Through Hole | Tape & Reel (TR) | 2012 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -65°C | ROHS3 Compliant | No | 2 | FREE WHEELING DIODE | DO-201AD, Axial | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | SB560 | 2 | Rectifier Diodes | SILICON | 1 | Schottky | 5A | GENERAL PURPOSE | 1 | 5A | 700mV | ISOLATED | 150A | Single | 500μA | Fast Recovery =< 500ns, > 200mA (Io) | 500μA @ 60V | 700mV @ 5A | -65°C~150°C | 60V | 5A | 500μA | 60V | 150A | 100A | 2.5 μs | ||||||||||||||||||||||||||||||||
| V8PA10HM3/I | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Tape & Reel (TR) | 2018 | Automotive, AEC-Q101, eSMP®, TMBS® | Active | 1 | 2 | EAR99 | Non-RoHS Compliant | FREE WHEELING DIODE, LOW POWER LOSS | DO-221BC, SMA Flat Leads Exposed Pad | unknown | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | NOT SPECIFIED | NOT SPECIFIED | YES | R-PDSO-F2 | 150°C | SILICON | 1 | SINGLE | Schottky | 2.7A | EFFICIENCY | 1 | 100V | 100A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | 800μA @ 100V | 760mV @ 8A | -40°C~150°C | 100V | 8A | 800μA | 850pF @ 4V 1MHz | |||||||||||||||||||||||||||||||||||||||
| SS2H9HE3_A/I | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 11 Weeks | Tape & Reel (TR) | 2014 | Automotive, AEC-Q100 | Active | 1 | 2 | EAR99 | Non-RoHS Compliant | FREE WHEELING DIODE, LOW POWER LOSS, LOW LEAKAGE CURRENT | DO-214AA, SMB | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | NOT SPECIFIED | NOT SPECIFIED | YES | R-PDSO-C2 | 175°C | AEC-Q101 | SILICON | 1 | SINGLE | Schottky | 2A | EFFICIENCY | 1 | 90V | 75A | Fast Recovery =< 500ns, > 200mA (Io) | 10μA @ 90V | 790mV @ 2A | -65°C~175°C | 90V | 2A | 10μA | ||||||||||||||||||||||||||||||||||||||||
| BYW53-TAP | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tape & Box (TB) | 2012 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -55°C | ROHS3 Compliant | Silver, Tin | No | 2 | SOD-57, Axial | Through Hole | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | 260 | 30 | 2 | Rectifier Diodes | SILICON | 1 | Avalanche | 2A | GENERAL PURPOSE | 1 | 2A | 1V | ISOLATED | 50A | Single | Standard Recovery >500ns, > 200mA (Io) | 1μA @ 400V | 1V @ 1A | -55°C~175°C | 400V | 2A | 1μA | 400V | 50A | 4 μs | 400V | 4 μs | |||||||||||||||||||||||||||||||
| S4PB-M3/86A | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | eSMP® | Active | 1 (Unlimited) | 3 | EAR99 | 150°C | -55°C | ROHS3 Compliant | Lead Free | No | 3 | FREE WHEELING DIODE | TO-277, 3-PowerDFN | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | 260 | 30 | S4PB | 3 | Rectifier Diodes | SILICON | 1 | Standard | 4A | GENERAL PURPOSE | 1 | TO-277A | 4A | 1.1V | CATHODE | 100A | Common Anode | Standard Recovery >500ns, > 200mA (Io) | 10μA @ 100V | 1.1V @ 4A | -55°C~150°C | 100V | 4A | 10μA | 100V | 100A | 100A | 2.5 μs | 100V | 2.5 μs | 30pF @ 4V 1MHz | |||||||||||||||||||||||||
| BY527TR | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tape & Reel (TR) | 2017 | Active | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | Silver, Tin | 2A | No | 2 | SOD-57, Axial | Through Hole | Avalanche | 2A | 1.65V | 50A | Single | SOD-57 | Standard Recovery >500ns, > 200mA (Io) | 1μA @ 800V | 1.65V @ 10A | -55°C~175°C | 800V | 2A | 1μA | 800V | 50A | 800V | 2A | 4 μs | 800V | 4 μs | 16pF @ 4V 1MHz | |||||||||||||||||||||||||||||||||||||||||||
| BYT52A-TAP | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tape & Box (TB) | 2011 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -55°C | ROHS3 Compliant | Silver, Tin | SOD-57, Axial | unknown | Through Hole | 8541.10.00.80 | e2 | Tin/Silver (Sn/Ag) | WIRE | NOT SPECIFIED | NOT SPECIFIED | 2 | E-LALF-W2 | Rectifier Diodes | Not Qualified | SILICON | 1 | Avalanche | 0.85A | 1.4A | ISOLATED | 50A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 50V | 1.3V @ 1A | -55°C~175°C | 50V | 1.4A | 5μA | 50V | 50A | 200 ns | 50V | 200 ns | |||||||||||||||||||||||||||||||||
| BYT54A-TR | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tape & Reel (TR) | 2011 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -55°C | ROHS3 Compliant | Silver, Tin | 1.25A | SOD-57, Axial | Through Hole | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | 260 | 30 | E-LALF-W2 | Rectifier Diodes | SILICON | 1 | Avalanche | 0.75A | 1.25A | 1.5V | ISOLATED | 30A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 50V | 1.5V @ 1A | -55°C~175°C | 50V | 1.25A | 5μA | 50V | 30A | 100 ns | 50V | 100 ns | ||||||||||||||||||||||||||||||||||
| BYT51D-TAP | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tape & Box (TB) | 2012 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -55°C | ROHS3 Compliant | Silver, Tin | 1.5A | SOD-57, Axial | Through Hole | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | 260 | 30 | E-LALF-W2 | Rectifier Diodes | SILICON | 1 | Avalanche | 1A | 1.5A | 1.1V | ISOLATED | 50A | Single | Standard Recovery >500ns, > 200mA (Io) | 1μA @ 200V | 1.1V @ 1A | -55°C~175°C | 200V | 1.5A | 1μA | 200V | 50A | 4 μs | 200V | 4 μs | |||||||||||||||||||||||||||||||||||
| EGF1T-E3/5CA | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | SUPERECTIFIER® | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -55°C | ROHS3 Compliant | No | 2 | FREE WHEELING DIODE, HIGH RELIABILITY | DO-214BA | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 40 | EGF1T | 2 | Rectifier Diodes | SILICON | 1 | Standard | 1A | 1A | 3V | 20A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 1300V | 3V @ 1A | -55°C~150°C | 1.3kV | 1A | 5μA | 1.3kV | 20A | 1300V | 75 ns | 1.3kV | 75 ns | ||||||||||||||||||||||||||||||
| U3D-M3/9AT | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | Surface Mount | Tape & Reel (TR) | 2017 | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | FREE WHEELING DIODE, LOW POWER LOSS | DO-214AB, SMC | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 30 | R-PDSO-C2 | 150°C | SILICON | 1 | SINGLE | Standard | 2A | ULTRA FAST RECOVERY | 1 | 100A | Fast Recovery =< 500ns, > 200mA (Io) | 10μA @ 200V | 900mV @ 3A | -55°C~150°C | 200V | 2A | 200V | 10μA | 30 ns | 25pF @ 4V 1MHz | |||||||||||||||||||||||||||||||||||||||
| VS-6ESH06-M3/87A | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2017 | FRED Pt® | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE | TO-277, 3-PowerDFN | unknown | Surface Mount | 8541.10.00.80 | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-F3 | 175°C | SILICON | 1 | SINGLE | Standard | 6A | HYPERFAST SOFT RECOVERY | 1 | TO-277A | 90A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 600V | 1.8V @ 6A | -65°C~175°C | 600V | 6A | 600V | 5μA | 40 ns | |||||||||||||||||||||||||||||||||||||
| BYX83TAP | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tape & Box (TB) | 2012 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -55°C | ROHS3 Compliant | Silver, Tin | 2A | No | 2 | SOD-57, Axial | Through Hole | 20pF | 8541.10.00.80 | e2 | Tin/Silver (Sn/Ag) | WIRE | 260 | 30 | Rectifier Diodes | SILICON | 1 | Avalanche | 2A | GENERAL PURPOSE | 1 | 1V | ISOLATED | 50A | Single | Standard Recovery >500ns, > 200mA (Io) | 1μA @ 400V | 1V @ 1A | -55°C~175°C | 400V | 2A | 1μA | 400V | 50A | 4 μs | 400V | 4 μs | 20pF @ 4V 1MHz | ||||||||||||||||||||||||||||||
| MURS320-M3/9AT | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 21 Weeks | Surface Mount | Tape & Reel (TR) | 2017 | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | FREE WHEELING DIODE | DO-214AB, SMC | unknown | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-C2 | 175°C | SILICON | 1 | SINGLE | Standard | 4A | EFFICIENCY | 1 | 125A | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 200V | 875mV @ 3A | -65°C~175°C | 200V | 3A | 200V | 5μA | 35 ns | ||||||||||||||||||||||||||||||||||||||||
| V10PM10-M3/H | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Tape & Reel (TR) | eSMP®, TMBS® | Active | 3 | EAR99 | Non-RoHS Compliant | FREE WHEELING DIODE, LOW POWER LOSS | TO-277, 3-PowerDFN | unknown | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | YES | R-PDSO-F3 | 150°C | SILICON | 1 | SINGLE | Schottky | 3.5A | EFFICIENCY | 1 | 100V | TO-277A | 180A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | 120μA @ 100V | 750mV @ 10A | -40°C~150°C | 100V | 10A | 120μA | ||||||||||||||||||||||||||||||||||||||||
| BYT53G-TAP | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tape & Box (TB) | 2013 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -55°C | ROHS3 Compliant | Silver, Tin | 1.9A | No | 2 | SOD-57, Axial | Through Hole | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | 260 | 30 | 2 | Rectifier Diodes | SILICON | 1 | Avalanche | ULTRA FAST SOFT RECOVERY | 1 | 1.9A | 1.1V | ISOLATED | 50A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 400V | 1.1V @ 1A | -55°C~175°C | 400V | 1.9A | 5μA | 400V | 50A | 50 ns | 400V | 50 ns | |||||||||||||||||||||||||||||||
| S5K-E3/9AT | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 11 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -55°C | ROHS3 Compliant | No | 2 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | DO-214AB, SMC | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 30 | S5K | 2 | Rectifier Diodes | SILICON | 1 | Standard | 5A | GENERAL PURPOSE | 1 | 5A | 1.15V | 100A | Single | Standard Recovery >500ns, > 200mA (Io) | 10μA @ 800V | 1.15V @ 5A | -55°C~150°C | 800V | 5A | 10μA | 800V | 100A | 2.5 μs | 800V | 2.5 μs | 40pF @ 4V 1MHz | |||||||||||||||||||||||||||||
| SF4006-TR | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tape & Reel (TR) | 2006 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -55°C | ROHS3 Compliant | 1A | No | SOD-57, Axial | Through Hole | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | 260 | 30 | E-LALF-W2 | Rectifier Diodes | SILICON | 1 | Avalanche | 1A | 1A | 1.7V | ISOLATED | 30A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 800V | 1.7V @ 1A | -55°C~175°C | 800V | 1A | 5μA | 800V | 30A | 75 ns | 800V | 75 ns | ||||||||||||||||||||||||||||||||||
| SF4007-TAP | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tape & Box (TB) | 2015 | Active | 1 (Unlimited) | 175°C | -55°C | 4mm | 3.6mm | ROHS3 Compliant | No | 2 | SOD-57, Axial | Through Hole | Avalanche | 1A | 1.7V | 30A | Single | SOD-57 | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 1000V | 1.7V @ 1A | -55°C~175°C | 1kV | 1A | 5μA | 1kV | 30A | 1000V | 1A | 75 ns | 1kV | 75 ns | ||||||||||||||||||||||||||||||||||||||||||||
| SE40PDHM3_A/H | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Surface Mount | Tape & Reel (TR) | 2017 | Automotive, AEC-Q101, eSMP® | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-277, 3-PowerDFN | unknown | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-F3 | 175°C | SILICON | 1 | SINGLE | Standard | GENERAL PURPOSE | 1 | TO-277A | 60A | CATHODE | Standard Recovery >500ns, > 200mA (Io) | 10μA @ 200V | 1.05V @ 4A | -55°C~175°C | 200V | 2.4A | 200V | 10μA | 2.2 μs | 28pF @ 4V 1MHz | ||||||||||||||||||||||||||||||||||||||
| SS8P2L-M3/87A | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2017 | eSMP® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 150°C | -55°C | ROHS3 Compliant | No | 3 | FREEWHEELING DIODE, HIGH RELIABILITY | TO-277, 3-PowerDFN | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | SS8P2L | 3 | Rectifier Diodes | SILICON | 1 | Schottky | 8A | EFFICIENCY | 1 | TO-277A | 8A | CATHODE | 150A | Common Anode | 200μA | Fast Recovery =< 500ns, > 200mA (Io) | 200μA @ 30V | 570mV @ 8A | -55°C~150°C | 20V | 8A | 200μA | 20V | 150A | 330pF @ 4V 1MHz | |||||||||||||||||||||||||||||||
| SE40PGHM3_A/H | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | Automotive, AEC-Q101, eSMP® | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-277, 3-PowerDFN | unknown | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-F3 | 175°C | SILICON | 1 | SINGLE | Standard | GENERAL PURPOSE | 1 | TO-277A | 60A | CATHODE | Standard Recovery >500ns, > 200mA (Io) | 10μA @ 200V | 1.05V @ 4A | -55°C~175°C | 200V | 2.4A | 200V | 10μA | 2.2 μs | 28pF @ 4V 1MHz | ||||||||||||||||||||||||||||||||||||||
| SS8PH9HM3_A/I | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Tape & Reel (TR) | 2017 | Automotive, AEC-Q101 | Active | 1 | 3 | EAR99 | ROHS3 Compliant | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | TO-277, 3-PowerDFN | unknown | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | YES | R-PDSO-F3 | 175°C | SILICON | 1 | SINGLE | Schottky | 8A | HIGH VOLTAGE | 1 | 90V | TO-277A | 150A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | 2μA @ 90V | 900mV @ 8A | -55°C~175°C | 90V | 8A | 2μA | 140pF @ 4V 1MHz | |||||||||||||||||||||||||||||||||||||
| VSSB3L6S-M3/5BT | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 11 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | TMBS® | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -55°C | ROHS3 Compliant | FREE WHEELING DIODE, LOW POWER LOSS | DO-214AA, SMB | unknown | Surface Mount | 8541.10.00.80 | DUAL | C BEND | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-C2 | Rectifier Diodes | Not Qualified | SILICON | 1 | Schottky | EFFICIENCY | 1 | 3A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 1.2mA @ 60V | 590mV @ 3A | -55°C~150°C | 60V | 2.6A | 1.2mA | 60V | 80A | 358pF @ 4V 1MHz | |||||||||||||||||||||||||||||||||||||
| GF1DHE3/67A | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | SUPERECTIFIER® | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | ROHS3 Compliant | No | 2 | FREE WHEELING DIODE, HIGH RELIABILITY | DO-214BA | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 40 | GF1D | 2 | Rectifier Diodes | SILICON | 1 | Standard | 1A | 1A | 30A | Single | Standard Recovery >500ns, > 200mA (Io) | 5μA @ 200V | 1.1V @ 1A | -65°C~175°C | 200V | 1A | 5μA | 200V | 30A | 2 μs | 200V | 3 μs | ||||||||||||||||||||||||||||||||
| SS3P4L-M3/87A | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | eSMP® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 150°C | -55°C | ROHS3 Compliant | No | 3 | FREE WHEELING DIODE, LOW POWER LOSS | TO-277, 3-PowerDFN | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | SS3P4 | 3 | Rectifier Diodes | SILICON | 1 | Schottky | 3A | EFFICIENCY | 1 | TO-277A | 3A | 470mV | CATHODE | 150A | Common Anode | 250μA | Fast Recovery =< 500ns, > 200mA (Io) | 250μA @ 40V | 470mV @ 3A | -55°C~150°C | 40V | 3A | 250μA | 40V | 150A | 280pF @ 4V 1MHz | ||||||||||||||||||||||||||||||
| BYW52-TAP | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tape & Box (TB) | 2012 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -55°C | ROHS3 Compliant | Silver, Tin | No | 2 | SOD-57, Axial | Through Hole | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | 260 | 30 | 2 | Rectifier Diodes | SILICON | 1 | Avalanche | 2A | GENERAL PURPOSE | 1 | 2A | 1V | ISOLATED | 50A | Single | Standard Recovery >500ns, > 200mA (Io) | 1μA @ 200V | 1V @ 1A | -55°C~175°C | 200V | 2A | 1μA | 200V | 50A | 4 μs | 200V | 4 μs |