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Vishay Semiconductor Diodes Division(13890)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Mounting Type | Technology | Capacitance | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | JESD-30 Code | Operating Temperature (Max) | Subcategory | Qualification Status | Diode Element Material | Number of Elements | Configuration | Diode Type | Output Current-Max | Application | Number of Phases | JEDEC-95 Code | Non-rep Pk Forward Current-Max | Forward Current | Forward Voltage | Case Connection | Max Surge Current | Element Configuration | Max Reverse Leakage Current | Speed | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction | Max Reverse Voltage (DC) | Average Rectified Current | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Max Forward Surge Current (Ifsm) | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Reverse Current-Max | Natural Thermal Resistance | Reverse Recovery Time | Reverse Voltage | Reverse Voltage (DC) | Recovery Time | Capacitance @ Vr, F |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| V15P45-M3/86A | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | Active | 1 (Unlimited) | 3 | EAR99 | 150°C | -40°C | 4.35mm | ROHS3 Compliant | No | 3 | FREE WHEELING DIODE, LOW POWER LOSS | TO-277, 3-PowerDFN | Unknown | 800μm | 6.15mm | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | 260 | 30 | 3 | Rectifier Diodes | SILICON | 1 | Schottky | EFFICIENCY | 1 | TO-277A | 15A | 580mV | CATHODE | 210A | Common Anode | 1.5mA | Fast Recovery =< 500ns, > 200mA (Io) | 1.5mA @ 45V | 580mV @ 15A | -40°C~150°C | 45V | 4.8A | 1.5mA | 45V | 210A | 210A | 4.8A DC | |||||||||||||||||||||||||||
| VS-8ETH03PBF | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 11 Weeks | Through Hole | Tube | 2004 | FRED Pt® | Discontinued | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | 10.4902mm | ROHS3 Compliant | No | 2 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | TO-220-2 | Unknown | 15.24mm | 4.6482mm | Through Hole | 8541.10.00.80 | e3 | MATTE TIN OVER NICKEL | 8ETH03 | 3 | Rectifier Diodes | SILICON | 1 | Standard | 8A | HYPER FAST RECOVERY | 1 | 8A | 1.25V | CATHODE | 100A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 20μA @ 300V | 1.25V @ 8A | -65°C~175°C | 300V | 8A | 20μA | 300V | 100A | 100A | 0.2 °C/W | 35 ns | 300V | 35 ns | |||||||||||||||||||||||||||
| UGB8DT-E3/81 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -55°C | ROHS3 Compliant | Lead Free | No | FREE WHEELING DIODE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 245 | 30 | UGB8D | 3 | R-PSSO-G2 | Rectifier Diodes | SILICON | 1 | Standard | 8A | EFFICIENCY | 1 | 8A | 1.2V | 150A | Common Cathode | Fast Recovery =< 500ns, > 200mA (Io) | 10μA @ 200V | 1V @ 8A | -55°C~150°C | 200V | 8A | 10μA | 200V | 150A | 30 ns | 200V | 30 ns | |||||||||||||||||||||||||||||
| MBRB760-E3/81 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | Surface Mount | Tape & Reel (TR) | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -65°C | ROHS3 Compliant | No | 3 | FREE WHEELING DIODE, LOW POWER LOSS | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | MBRB760 | 3 | R-PSSO-G2 | Rectifier Diodes | SILICON | 1 | Schottky | EFFICIENCY | 1 | 7.5A | 750mV | 150A | Common Cathode | 100μA | Fast Recovery =< 500ns, > 200mA (Io) | 500μA @ 60V | 750mV @ 7.5A | -65°C~150°C | 60V | 7.5A | 500μA | 60V | 150A | |||||||||||||||||||||||||||||||||||
| MBRB1090-E3/8W | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount, Through Hole | Tape & Reel (TR) | 2007 | TMBS® | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -65°C | 10.4394mm | ROHS3 Compliant | No | 2 | FREE WHEELING DIODE, LOW POWER LOSS | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 9.144mm | 4.826mm | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 245 | 40 | 3 | Rectifier Diodes | SILICON | 1 | Schottky | EFFICIENCY | 1 | 10A | 800mV | 150A | Common Cathode | 100μA | Fast Recovery =< 500ns, > 200mA (Io) | 100μA @ 90V | 800mV @ 10A | -65°C~150°C | 90V | 10A | 100μA | 90V | 150A | ||||||||||||||||||||||||||||||
| BYT77-TAP | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 17 Weeks | Through Hole | Tape & Box (TB) | 2011 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -55°C | ROHS3 Compliant | Silver, Tin | No | 2 | SOD-64, Axial | Through Hole | 8541.10.00.80 | e2 | Tin/Silver (Sn/Ag) | WIRE | 260 | 30 | Rectifier Diodes | SILICON | 1 | Avalanche | 3A | FAST SOFT RECOVERY | 1 | 1.2V | ISOLATED | 100A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 800V | 1.2V @ 3A | -55°C~175°C | 800V | 3A | 1μA | 800V | 100A | 250 ns | 800V | 250 ns | |||||||||||||||||||||||||||||||||
| VS-12FL60S02 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Chassis, Stud | Bulk | 2011 | Active | 1 (Unlimited) | 1 | EAR99 | 150°C | -65°C | ROHS3 Compliant | No | 2 | FREE WHEELING DIODE | DO-203AA, DO-4, Stud | Unknown | Chassis, Stud Mount | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | 1 | O-MUPM-D1 | SILICON | 1 | Standard | 1 | 12A | 1.4V | CATHODE | 180A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 50μA @ 600V | 1.4V @ 12A | -65°C~150°C | 600V | 12A | 50μA | 600V | 180A | 150A | 0.5 °C/W | 200 ns | 600V | 200 ns | ||||||||||||||||||||||||||||||||
| P600K-E3/73 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tape & Box (TB) | 2014 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -50°C | ROHS3 Compliant | No | 600 | FREE WHEELING DIODE | P600, Axial | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | P600K | 2 | O-PALF-W2 | Rectifier Diodes | SILICON | 1 | Standard | 6A | GENERAL PURPOSE | 1 | 22A | 1.3V | ISOLATED | 400A | Single | Standard Recovery >500ns, > 200mA (Io) | 5μA @ 800V | 900mV @ 6A | -50°C~150°C | 800V | 6A | 5μA | 800V | 400A | 2.5 μs | 800V | 2.5 μs | 150pF @ 4V 1MHz | ||||||||||||||||||||||||||||||
| VIT760-E3/4W | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Through Hole | Tube | 2017 | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | FREE WHEELING DIODE, LOW POWER LOSS | TO-262-3 Long Leads, I2Pak, TO-262AA | unknown | Through Hole | 8541.10.00.80 | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSIP-T3 | 150°C | Rectifier Diodes | Not Qualified | SILICON | 1 | SINGLE | Schottky | EFFICIENCY | 1 | 100A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | 700μA @ 60V | 800mV @ 7.5A | -55°C~150°C | 60V | 7.5A | 60V | ||||||||||||||||||||||||||||||||||||||||||
| BYW84-TAP | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 17 Weeks | Through Hole | Tape & Box (TB) | 2016 | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -55°C | ROHS3 Compliant | Silver, Tin | 3A | No | 2 | SOD-64, Axial | Through Hole | 40pF | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | Rectifier Diodes | SILICON | 1 | Avalanche | 3A | GENERAL PURPOSE | 1 | 3A | 1V | ISOLATED | 100A | Single | Standard Recovery >500ns, > 200mA (Io) | 1μA @ 600V | 1V @ 3A | -55°C~175°C | 600V | 3A | 1μA | 600V | 100A | 7.5 μs | 600V | 6 ns | 60pF @ 4V 1MHz | ||||||||||||||||||||||||||||||||
| SF5401-TAP | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 17 Weeks | Through Hole | Tape & Box (TB) | 2017 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -55°C | ROHS3 Compliant | No | SOD-64, Axial | Through Hole | AVALANCHE | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | 260 | 30 | 2 | E-LALF-W2 | Rectifier Diodes | SILICON | 1 | Standard | 3A | ULTRA FAST RECOVERY | 1 | 3A | ISOLATED | 150A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 100V | 1.1V @ 1A | -55°C~175°C | 100V | 3A | 5μA | 100V | 150A | 50 ns | 100V | 50 ns | ||||||||||||||||||||||||||||||||
| BYW85-TAP | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 17 Weeks | Through Hole | Tape & Box (TB) | 2012 | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -55°C | ROHS3 Compliant | Silver, Tin | No | 2 | SOD-64, Axial | Through Hole | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | Rectifier Diodes | SILICON | 1 | Avalanche | 3A | GENERAL PURPOSE | 1 | 3A | 1V | ISOLATED | 100A | Single | Standard Recovery >500ns, > 200mA (Io) | 1μA @ 800V | 1V @ 3A | -55°C~175°C | 800V | 3A | 1μA | 800V | 100A | 7.5 μs | 800V | 6 ns | 60pF @ 4V 1MHz | ||||||||||||||||||||||||||||||||||
| BYT56K-TAP | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 17 Weeks | Through Hole | Tape & Box (TB) | 2012 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -55°C | ROHS3 Compliant | Silver, Tin | 3A | No | SOD-64, Axial | Through Hole | 8541.10.00.80 | e2 | Tin/Silver (Sn/Ag) | WIRE | 2 | E-LALF-W2 | Rectifier Diodes | SILICON | 1 | Avalanche | 1.5A | FAST SOFT RECOVERY | 1 | 3A | ISOLATED | 80A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 800V | 1.4V @ 3A | -55°C~175°C | 800V | 3A | 5μA | 800V | 80A | 100 ns | 800V | 100 ns | |||||||||||||||||||||||||||||||||
| BYW74TAP | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 17 Weeks | Through Hole | Tape & Box (TB) | 2007 | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -55°C | ROHS3 Compliant | Silver, Tin | No | 2 | SOD-64, Axial | Through Hole | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | SILICON | 1 | Avalanche | 3A | FAST SOFT RECOVERY | 1 | 3A | 1.1V | ISOLATED | 100A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 400V | 1.1V @ 3A | -55°C~175°C | 400V | 3A | 5μA | 400V | 100A | 200 ns | 400V | 200 ns | ||||||||||||||||||||||||||||||||||||
| VT5200-E3/4W | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Through Hole | Tube | 2017 | TMBS® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | 3 | FREE WHEELING DIODE, LOW POWER LOSS | TO-220-2 | unknown | Through Hole | 8541.10.00.80 | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T2 | 150°C | Rectifier Diodes | Not Qualified | SILICON | 1 | SINGLE | Schottky | 5A | EFFICIENCY | 1 | TO-220AC | 80A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | 150μA @ 200V | 1.6V @ 5A | -40°C~150°C | 200V | 5A | 200V | ||||||||||||||||||||||||||||||||||||||
| VS-80PFR160 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Chassis, Stud | Bulk | 2013 | Active | 1 (Unlimited) | 1 | EAR99 | 150°C | -55°C | ROHS3 Compliant | No | DO-203AB, DO-5, Stud | Chassis, Stud Mount | 8541.10.00.80 | UPPER | SOLDER LUG | O-MUPM-D1 | SILICON | 1 | Standard, Reverse Polarity | GENERAL PURPOSE | 1 | 80A | 1.25kA | Single | Standard Recovery >500ns, > 200mA (Io) | 1.46V @ 220A | -55°C~150°C | 1.6kV | 80A | 4.5mA | 1.6kV | 1.25kA | 1600V | 1.6kV | |||||||||||||||||||||||||||||||||||||||||||
| VS-6EWX06FN-M3 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Bulk | 2012 | FRED Pt® | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | ROHS3 Compliant | Lead Free | 3 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | TO-252-3, DPak (2 Leads + Tab), SC-63 | Unknown | Surface Mount | 8541.10.00.80 | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 6EWX06 | 3 | R-PSSO-G2 | Rectifier Diodes | Not Qualified | SILICON | 1 | Standard | 6A | HYPERFAST SOFT RECOVERY HIGH POWER | 1 | TO-252AA | 6A | 3.1V | CATHODE | Single | Fast Recovery =< 500ns, > 200mA (Io) | 20μA @ 600V | 3.1V @ 6A | -65°C~175°C | 600V | 6A | 20μA | 600V | 50A | 50A | 21 ns | ||||||||||||||||||||||||||||||
| SE10DG-M3/I | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2017 | Automotive, AEC-Q101, eSMP® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab) Variant | unknown | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 175°C | SILICON | 1 | SINGLE | Standard | 3A | GENERAL PURPOSE | 1 | TO-263AC | 110A | CATHODE | Standard Recovery >500ns, > 200mA (Io) | 15μA @ 400V | 1.15V @ 10A | -55°C~175°C | 400V | 3A | 400V | 15μA | 3 μs | 67pF @ 4V 1MHz | |||||||||||||||||||||||||||||||||||||
| VS-6EWL06FNTRL-M3 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2014 | FRED Pt® | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | ROHS3 Compliant | 3 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | TO-252-3, DPak (2 Leads + Tab), SC-63 | unknown | Surface Mount | 8541.10.00.80 | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSSO-G2 | Rectifier Diodes | Not Qualified | SILICON | 1 | Standard | 6A | HYPER ULTRA FAST RECOVERY | 1 | TO-252AA | 6A | CATHODE | Single | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 600V | 1.25V @ 6A | -65°C~175°C | 600V | 6A | 5μA | 600V | 80A | 70 ns | ||||||||||||||||||||||||||||||||||
| BYW172D-TAP | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 17 Weeks | Through Hole | Tape & Box (TB) | 2012 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -55°C | ROHS3 Compliant | Silver, Tin | SOD-64, Axial | unknown | Through Hole | 8541.10.00.80 | e2 | Tin/Silver (Sn/Ag) | WIRE | NOT SPECIFIED | NOT SPECIFIED | 2 | E-LALF-W2 | Rectifier Diodes | Not Qualified | SILICON | 1 | Avalanche | 3A | FAST SOFT RECOVERY | 1 | 3A | ISOLATED | 100A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 1μA @ 200V | 1.5V @ 9A | -55°C~175°C | 200V | 3A | 1μA | 200V | 100A | 100 ns | 200V | 100 ns | |||||||||||||||||||||||||||||||
| SS10P3-M3/86A | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2014 | eSMP® | Active | 1 (Unlimited) | 3 | EAR99 | 150°C | -55°C | ROHS3 Compliant | No | 3 | FREEWHEELING DIODE, LOW POWER LOSS | TO-277, 3-PowerDFN | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | SS10P3 | 3 | SILICON | 1 | Schottky | EFFICIENCY | 1 | TO-277A | 10A | 560mV | CATHODE | 280A | Common Anode | 800μA | Fast Recovery =< 500ns, > 200mA (Io) | 800μA @ 30V | 560mV @ 10A | -55°C~150°C | 30V | 10A | 800μA | 30V | 280A | ||||||||||||||||||||||||||||||||||
| SF5403-TAP | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 17 Weeks | Through Hole | Tape & Box (TB) | 2006 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -55°C | ROHS3 Compliant | 3A | No | SOD-64, Axial | Through Hole | AVALANCHE | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | 260 | 30 | 2 | E-LALF-W2 | Rectifier Diodes | SILICON | 1 | Standard | 3A | ULTRA FAST RECOVERY | 1 | 3A | ISOLATED | 150A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 300V | 1.1V @ 3A | -55°C~175°C | 300V | 3A | 5μA | 300V | 150A | 50 ns | 300V | 50 ns | |||||||||||||||||||||||||||||||
| BYW172F-TAP | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 17 Weeks | Through Hole | Tape & Box (TB) | 2012 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -55°C | ROHS3 Compliant | Silver, Tin | SOD-64, Axial | unknown | Through Hole | 8541.10.00.80 | e2 | Tin/Silver (Sn/Ag) | WIRE | NOT SPECIFIED | NOT SPECIFIED | 2 | E-LALF-W2 | Rectifier Diodes | Not Qualified | SILICON | 1 | Avalanche | 3A | FAST SOFT RECOVERY | 1 | 3A | ISOLATED | 100A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 1μA @ 300V | 1.5V @ 9A | -55°C~175°C | 300V | 3A | 1μA | 300V | 100A | 100 ns | 300V | 100 ns | |||||||||||||||||||||||||||||||
| VS-5EWL06FN-M3 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tube | 2012 | FRED Pt® | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | 6.73mm | ROHS3 Compliant | No | 3 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | TO-252-3, DPak (2 Leads + Tab), SC-63 | Unknown | 2.39mm | 6.22mm | Surface Mount | 8541.10.00.80 | GULL WING | 5EWL06 | 3 | R-PSSO-G2 | Rectifier Diodes | SILICON | 1 | Standard | 5A | HYPER ULTRA FAST RECOVERY | 1 | TO-252AA | 5A | 850mV | CATHODE | 80A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 600V | 1.2V @ 5A | -65°C~175°C | 600V | 5A | 5μA | 600V | 80A | 80A | 70 ns | 600V | 145 ns | |||||||||||||||||||||||||||
| BYW172G-TAP | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 17 Weeks | Through Hole | Tape & Box (TB) | 2012 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -55°C | ROHS3 Compliant | Silver, Tin | SOD-64, Axial | unknown | Through Hole | 8541.10.00.80 | e2 | Tin/Silver (Sn/Ag) | WIRE | NOT SPECIFIED | NOT SPECIFIED | 2 | E-LALF-W2 | Rectifier Diodes | Not Qualified | SILICON | 1 | Avalanche | 3A | FAST SOFT RECOVERY | 1 | 3A | ISOLATED | 100A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 1μA @ 400V | 1.5V @ 9A | -55°C~175°C | 400V | 3A | 1μA | 400V | 100A | 100 ns | 400V | 100 ns | |||||||||||||||||||||||||||||||
| BYW76TR | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 17 Weeks | Through Hole | Tape & Reel (TR) | 2006 | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -55°C | ROHS3 Compliant | Silver, Tin | 3A | No | 2 | SOD-64, Axial | Through Hole | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | 260 | 30 | 2 | Rectifier Diodes | SILICON | 1 | Avalanche | 3A | FAST SOFT RECOVERY | 1 | 3A | 1.1V | ISOLATED | 100A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 600V | 1.1V @ 3A | -55°C~175°C | 600V | 3A | 5μA | 600V | 100A | 200 ns | 600V | 200 ns | |||||||||||||||||||||||||||||||
| UH4PBCHM3_A/H | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | Automotive, AEC-Q101, eSMP® | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | FREE WHEELING DIODE, LOW POWER LOSS | TO-277, 3-PowerDFN | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | 260 | 30 | R-PDSO-F3 | 175°C | SILICON | 2 | COMMON CATHODE, 2 ELEMENTS | Standard | 2A | ULTRA FAST RECOVERY | 1 | TO-277A | 40A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 100V | 1.05V @ 2A | -55°C~175°C | 100V | 2A | 100V | 5μA | 25 ns | 21pF @ 4V 1MHz | |||||||||||||||||||||||||||||||||||||
| SS10P3HM3_A/H | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2017 | Automotive, AEC-Q101 | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | FREE WHEELING DIODE, LOW POWER LOSS | TO-277, 3-PowerDFN | unknown | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | R-PDSO-F3 | 150°C | SILICON | 1 | SINGLE | Schottky | EFFICIENCY | 1 | TO-277A | 280A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | 800μA @ 30V | 560mV @ 10A | -55°C~150°C | 30V | 10A | 30V | 800μA | 750pF @ 4V 1MHz | ||||||||||||||||||||||||||||||||||||||||
| AR4PJ-M3/86A | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | eSMP® | Active | 1 (Unlimited) | 3 | EAR99 | 175°C | -55°C | ROHS3 Compliant | Tin | No | 3 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | TO-277, 3-PowerDFN | Surface Mount | 8541.10.00.80 | DUAL | FLAT | AR4PJ | 3 | Rectifier Diodes | SILICON | 1 | Avalanche | 2A | 1 | TO-277A | 4A | CATHODE | 65A | Common Anode | Fast Recovery =< 500ns, > 200mA (Io) | 10μA @ 600V | 1.6V @ 4A | -55°C~175°C | 600V | 2A | 600nA | 600V | 65A | 2A DC | 140 ns | 600V | 110 ns | 77pF @ 4V 1MHz | |||||||||||||||||||||||||||||||
| AR4PG-M3/86A | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | eSMP® | Active | 1 (Unlimited) | 3 | EAR99 | 175°C | -55°C | ROHS3 Compliant | Tin | No | 3 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | TO-277, 3-PowerDFN | Surface Mount | 8541.10.00.80 | DUAL | FLAT | AR4PG | 3 | Rectifier Diodes | SILICON | 1 | Avalanche | 2A | 1 | TO-277A | 4A | CATHODE | 65A | Common Anode | Fast Recovery =< 500ns, > 200mA (Io) | 10μA @ 400V | 1.6V @ 4A | -55°C~175°C | 400V | 2A | 600nA | 400V | 65A | 2A DC | 140 ns | 400V | 110 ns | 77pF @ 4V 1MHz |