Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Current | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Voltage | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Power Dissipation-Max | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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FQB11P06TM | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | ACTIVE (Last Updated: 15 hours ago) | Surface Mount | Tape & Reel (TR) | 2013 | QFET® | yes | Active | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | -11.4A | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.83mm | 9.65mm | Surface Mount | 1.31247g | -55°C~175°C TJ | -60V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | GULL WING | R-PSSO-G2 | Other Transistors | 1 | DRAIN | Single | 3.13W | 6.5 ns | 3.13W Ta 53W Tc | 11.4A | SWITCHING | 15 ns | SILICON | P-Channel | 175m Ω @ 5.7A, 10V | 4V @ 250μA | 550pF @ 25V | 17nC @ 10V | 40ns | 45 ns | 25V | -60V | 11.4A Tc | 60V | 45.6A | 10V | ±25V | |||||||||||||||||||||||||||||
NTD2955-1G | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | ACTIVE (Last Updated: 4 days ago) | Tube | 2005 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | -12A | No | 4 | TO-251-3 Short Leads, IPak, TO-251AA | No SVHC | 6.35mm | 2.38mm | 155MOhm | Through Hole | -55°C~175°C TJ | -60V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | 4 | NO | R-PSIP-T3 | Other Transistors | 1 | DRAIN | Single | 55W | 10 ns | -2.8V | 55W Tj | 12A | SWITCHING | 26 ns | SILICON | P-Channel | 180m Ω @ 6A, 10V | 4V @ 250μA | 750pF @ 25V | 30nC @ 10V | 45ns | 48 ns | 20V | -60V | -2.8 V | 12A Ta | 60V | 36A | 10V | ±20V | |||||||||||||||||||||||||||
FQP7P06 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 5 Weeks | ACTIVE (Last Updated: 2 days ago) | Through Hole | Tube | 2001 | QFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.1mm | ROHS3 Compliant | Lead Free | -7A | 3 | TO-220-3 | No SVHC | 9.4mm | 4.7mm | 410MOhm | Through Hole | 1.8g | -55°C~175°C TJ | -60V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | Other Transistors | Not Qualified | 1 | TO-220AB | Single | 45W | 7 ns | -4V | 45W Tc | 7A | SWITCHING | 7.5 ns | SILICON | P-Channel | 410m Ω @ 3.5A, 10V | 4V @ 250μA | 295pF @ 25V | 8.2nC @ 10V | 50ns | 25 ns | 25V | -60V | -60V | -4 V | 7A | 7A Tc | 60V | 28A | 90 mJ | 10V | ±25V | ||||||||||||||||||||||
FQP4N20L | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | ACTIVE (Last Updated: 3 days ago) | Through Hole | Tube | QFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3.8A | No | TO-220-3 | Through Hole | 1.8g | -55°C~150°C TJ | 200V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | R-PSFM-T3 | FET General Purpose Power | 1 | TO-220AB | Single | 45W | 7 ns | 45W Tc | 3.8A | SWITCHING | 15 ns | SILICON | N-Channel | 1.35 Ω @ 1.9A, 10V | 2V @ 250μA | 310pF @ 25V | 5.2nC @ 5V | 70ns | 40 ns | 20V | 200V | 3.6A | 3.8A Tc | 52 mJ | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
MCH3375-TL-W | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 5 Weeks | ACTIVE (Last Updated: 1 day ago) | Surface Mount | Tape & Reel (TR) | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 3-SMD, Flat Lead | Surface Mount | 150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e6 | Tin/Bismuth (Sn/Bi) | DUAL | R-PDSO-F3 | 1 | SINGLE WITH BUILT-IN DIODE | 800mW Ta | 1.6A | SWITCHING | 0.295Ohm | 30V | SILICON | P-Channel | 295m Ω @ 800mA, 10V | 2.6V @ 1mA | 82pF @ 10V | 2.2nC @ 10V | 1.6A Ta | 30V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
NTMFS4C10NT1G | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | ACTIVE (Last Updated: 20 hours ago) | Tape & Reel (TR) | 2013 | yes | Active | 1 (Unlimited) | 5 | EAR99 | 6.1mm | ROHS3 Compliant | Lead Free | 5 | 8-PowerTDFN | No SVHC | not_compliant | 1.05mm | 5.1mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | 5 | YES | 1 | FET General Purpose Power | 1 | DRAIN | Single | 9 ns | 2.2V | 750mW Ta 23.6W Tc | 46A | SWITCHING | 30V | 14 ns | SILICON | N-Channel | 6.95m Ω @ 30A, 10V | 2.2V @ 250μA | 987pF @ 15V | 9.7nC @ 4.5V | 34ns | 7 ns | 20V | 8.2A | 8.2A Ta | 30V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
FQD7P06TM | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | ACTIVE (Last Updated: 2 days ago) | Surface Mount | Tape & Reel (TR) | 2001 | QFET® | yes | Active | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | -5.4A | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.39mm | 6.22mm | 450mOhm | Surface Mount | 260.37mg | -55°C~150°C TJ | -60V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | GULL WING | R-PSSO-G2 | Other Transistors | 1 | DRAIN | Single | 2.5W | 7 ns | 2.5W Ta 28W Tc | 5.4A | SWITCHING | 7.5 ns | SILICON | P-Channel | 451m Ω @ 2.7A, 10V | 4V @ 250μA | 295pF @ 25V | 8.2nC @ 10V | 50ns | 25 ns | 25V | -60V | 5.4A Tc | 60V | 90 mJ | 10V | ±25V | ||||||||||||||||||||||||||||
FQT3P20TF | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | ACTIVE (Last Updated: 4 days ago) | Surface Mount | Tape & Reel (TR) | 2001 | QFET® | yes | Active | 1 (Unlimited) | 4 | EAR99 | 6.5mm | ROHS3 Compliant | Lead Free | -670mA | No | TO-261-4, TO-261AA | 1.6mm | 3.56mm | 2.7Ohm | Surface Mount | 188mg | -55°C~150°C TJ | -200V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | GULL WING | R-PDSO-G4 | Other Transistors | 1 | DRAIN | Single | 2.5W | 8.5 ns | 2.5W Tc | 670mA | SWITCHING | 12 ns | SILICON | P-Channel | 2.7 Ω @ 335mA, 10V | 5V @ 250μA | 250pF @ 25V | 8nC @ 10V | 35ns | 25 ns | 30V | -200V | 0.67A | 670mA Tc | 200V | 2.7A | 10V | ±30V | |||||||||||||||||||||||||||
FQP12P10 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 5 Weeks | ACTIVE (Last Updated: 2 days ago) | Through Hole | Tube | 2013 | QFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | -11.5A | TO-220-3 | Through Hole | 1.8g | -55°C~175°C TJ | -100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | R-PSFM-T3 | Other Transistors | Not Qualified | 1 | TO-220AB | Single | 75W | 15 ns | 75W Tc | 11.5A | SWITCHING | 0.29Ohm | 35 ns | SILICON | P-Channel | 290m Ω @ 5.75A, 10V | 4V @ 250μA | 800pF @ 25V | 27nC @ 10V | 160ns | 60 ns | 30V | -100V | 11.5A Tc | 100V | 46A | 370 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||
FDP150N10A-F102 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 9 Weeks | ACTIVE (Last Updated: 2 days ago) | Through Hole | Tube | PowerTrench® | yes | Active | 1 (Unlimited) | EAR99 | 10.36mm | ROHS3 Compliant | No | 3 | TO-220-3 | 15.215mm | 4.672mm | Through Hole | 1.8g | -55°C~175°C TJ | MOSFET (Metal Oxide) | FET General Purpose Power | 1 | Single | 91W | 13 ns | 91W Tc | 50A | 21 ns | N-Channel | 15m Ω @ 50A, 10V | 4V @ 250μA | 1440pF @ 50V | 21nC @ 10V | 16ns | 5 ns | 20V | 100V | 50A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
2SJ652-1E | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 9 Weeks | ACTIVE (Last Updated: 2 days ago) | Through Hole | Tube | 2013 | yes | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 Full Pack | not_compliant | Through Hole | 150°C TJ | MOSFET (Metal Oxide) | e3 | Tin (Sn) | Other Transistors | Single | 33 ns | 2W Ta 30W Tc | 28A | 310 ns | P-Channel | 38m Ω @ 14A, 10V | 4360pF @ 20V | 80nC @ 10V | 210ns | 180 ns | 20V | -60V | 28A Ta | 60V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
FDPF33N25T | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 9 Weeks | ACTIVE (Last Updated: 4 days ago) | Through Hole | Tube | 2017 | UniFET™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.36mm | ROHS3 Compliant | Lead Free | 20A | 3 | TO-220-3 Full Pack | No SVHC | not_compliant | 16.07mm | 4.9mm | Through Hole | 2.27g | -55°C~150°C TJ | 250V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Not Qualified | 1 | TO-220AB | ISOLATED | Single | 94W | 35 ns | 5V | 37W Tc | 20A | SWITCHING | 0.094Ohm | 75 ns | SILICON | N-Channel | 94m Ω @ 16.5A, 10V | 5V @ 250μA | 2135pF @ 25V | 48nC @ 10V | 230ns | 120 ns | 30V | 250V | 33A Tc | 10V | ±30V | ||||||||||||||||||||||||||
HUF75645P3 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 6 Weeks | ACTIVE (Last Updated: 3 days ago) | Through Hole | Tube | 2002 | UltraFET™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | 75A | No | 3 | TO-220-3 | No SVHC | 16.3mm | 4.7mm | 14mOhm | Through Hole | 4.535924g | -55°C~175°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 75A | e3 | Tin (Sn) | FET General Purpose Power | 100V | 1 | TO-220AB | DRAIN | Single | 310W | 14 ns | 4V | 310W Tc | 75A | SWITCHING | 41 ns | SILICON | N-Channel | 14m Ω @ 75A, 10V | 4V @ 250μA | 3790pF @ 25V | 238nC @ 20V | 117ns | 97 ns | 20V | 100V | 75A Tc | 10V | ±20V | |||||||||||||||||||||||||||
FQP11P06 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | ACTIVE (Last Updated: 2 days ago) | Through Hole | Tube | 2013 | QFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.1mm | ROHS3 Compliant | Lead Free | -11.4A | No | 3 | TO-220-3 | 15.38mm | 4.7mm | Through Hole | 1.8g | -55°C~175°C TJ | -60V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | Other Transistors | 1 | TO-220AB | Single | 53W | 6.5 ns | 53W Tc | 11.4A | SWITCHING | 15 ns | SILICON | P-Channel | 175m Ω @ 5.7A, 10V | 4V @ 250μA | 550pF @ 25V | 17nC @ 10V | 40ns | 45 ns | 25V | -60V | 11.4A Tc | 60V | 45.6A | 10V | ±25V | |||||||||||||||||||||||||||||||
FQP46N15 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 5 Weeks | ACTIVE (Last Updated: 3 days ago) | Through Hole | Tube | 2000 | QFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.1mm | ROHS3 Compliant | Lead Free | 45.6A | No | 3 | TO-220-3 | No SVHC | 9.4mm | 4.7mm | 42mOhm | Through Hole | 4.535924g | -55°C~175°C TJ | 150V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 45A | e3 | Tin (Sn) | FET General Purpose Power | 150V | 1 | TO-220AB | Single | 210W | 35 ns | 4V | 210W Tc | 45.6A | SWITCHING | 210 ns | SILICON | N-Channel | 42m Ω @ 22.8A, 10V | 4V @ 250μA | 3250pF @ 25V | 110nC @ 10V | 320ns | 200 ns | 25V | 150V | 45.6A Tc | 650 mJ | 10V | ±25V | |||||||||||||||||||||||||||
FQPF8N80C | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | ACTIVE (Last Updated: 3 days ago) | Through Hole | Tube | 2003 | QFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.16mm | ROHS3 Compliant | Lead Free | 8A | No | 3 | TO-220-3 Full Pack | No SVHC | 9.19mm | 4.7mm | 1.55Ohm | Through Hole | 2.27g | -55°C~150°C TJ | 800V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | FET General Purpose Power | 1 | TO-220AB | ISOLATED | Single | 59W | 40 ns | 5V | 59W Tc | 8A | SWITCHING | 65 ns | SILICON | N-Channel | 1.55 Ω @ 4A, 10V | 5V @ 250μA | 2050pF @ 25V | 45nC @ 10V | 110ns | 70 ns | 30V | 800V | 8A | 8A Tc | 850 mJ | 10V | ±30V | |||||||||||||||||||||||||||
FQP11N40C | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 9 Weeks | ACTIVE (Last Updated: 2 days ago) | Through Hole | Tube | 2005 | QFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.1mm | ROHS3 Compliant | Lead Free | 10.5A | 3 | TO-220-3 | No SVHC | 9.4mm | 4.7mm | 530MOhm | Through Hole | -55°C~150°C TJ | 400V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 10A | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Not Qualified | 400V | 1 | TO-220AB | Single | 135W | 14 ns | 4V | 135W Tc | 10.5A | SWITCHING | 81 ns | SILICON | N-Channel | 530m Ω @ 5.25A, 10V | 4V @ 250μA | 1090pF @ 25V | 35nC @ 10V | 89ns | 81 ns | 30V | 400V | 10.5A Tc | 10V | ±30V | |||||||||||||||||||||||||||
HUF75639P3 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 9 Weeks | ACTIVE (Last Updated: 3 days ago) | Through Hole | Tube | 2002 | UltraFET™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | Tin | 56A | No | 3 | TO-220-3 | No SVHC | 9.4mm | 4.83mm | 25mOhm | Through Hole | 1.8g | -55°C~175°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 200W | 15 ns | 4V | 200W Tc | 56A | SWITCHING | 20 ns | SILICON | N-Channel | 25m Ω @ 56A, 10V | 4V @ 250μA | 2000pF @ 25V | 130nC @ 20V | 60ns | 25 ns | 20V | 100V | 56A Tc | 10V | ±20V | |||||||||||||||||||||||||||||
FDP8860 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | ACTIVE (Last Updated: 3 days ago) | Through Hole | Tube | 2006 | PowerTrench® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | Tin | 80A | 3 | TO-220-3 | No SVHC | 9.4mm | 4.83mm | 2.5MOhm | Through Hole | 1.8g | -55°C~175°C TJ | 30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Not Qualified | 1 | TO-220AB | Single | 254W | 35 ns | 1.6V | 254W Tc | 80A | SWITCHING | 64 ns | SILICON | N-Channel | 2.5m Ω @ 80A, 10V | 2.5V @ 250μA | 12240pF @ 15V | 222nC @ 10V | 135ns | 59 ns | 20V | 30V | 80A Tc | 556A | 4.5V 10V | ±20V | |||||||||||||||||||||||||||
FDP7N60NZ | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 5 Weeks | ACTIVE (Last Updated: 3 days ago) | Through Hole | Tube | 2010 | UniFET-II™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 | No SVHC | 20.4mm | 4.83mm | 1.25MOhm | Through Hole | 1.8g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | 1 | FET General Purpose Power | 1 | TO-220AB | Single | 147W | 17.5 ns | 3V | 147W Tc | 6.5A | 150°C | SWITCHING | 40 ns | SILICON | N-Channel | 1.25 Ω @ 3.25A, 10V | 5V @ 250μA | 730pF @ 25V | 17nC @ 10V | 30ns | 25 ns | 30V | 600V | 6.5A Tc | 26A | 275 mJ | 10V | ±30V | ||||||||||||||||||||||||||||
FQP6N60C | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 6 Weeks | ACTIVE, NOT REC (Last Updated: 3 days ago) | Through Hole | Tube | QFET® | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 5.5A | FAST SWITCHING | TO-220-3 | Through Hole | 1.8g | -55°C~150°C TJ | 600V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | R-PSFM-T3 | Not Qualified | 1 | TO-220AB | Single | 125W | 125W Tc | 5.5A | SWITCHING | 2Ohm | 45 ns | SILICON | N-Channel | 2 Ω @ 2.75A, 10V | 4V @ 250μA | 810pF @ 25V | 20nC @ 10V | 45ns | 45 ns | 30V | 600V | 5.5A Tc | 22A | 300 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||
FDPF12N50FT | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | ACTIVE (Last Updated: 3 days ago) | Through Hole | Tube | 2013 | UniFET™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.36mm | ROHS3 Compliant | No | 3 | TO-220-3 Full Pack | 16.07mm | 4.9mm | Through Hole | 2.27g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | FET General Purpose Power | 1 | TO-220AB | ISOLATED | Single | 42W | 21 ns | 42W Tc | 11.5A | SWITCHING | 0.7Ohm | 50 ns | SILICON | N-Channel | 700m Ω @ 6A, 10V | 5V @ 250μA | 1395pF @ 25V | 30nC @ 10V | 45ns | 35 ns | 30V | 500V | 11.5A Tc | 46A | 456 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||
FDP12N60NZ | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | ACTIVE (Last Updated: 2 days ago) | Through Hole | Tube | 2010 | UniFET-II™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.67mm | ROHS3 Compliant | Tin | No | 3 | TO-220-3 | No SVHC | 16.51mm | 4.83mm | Through Hole | 1.8g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | FET General Purpose Power | 1 | TO-220AB | Single | 240W | 25 ns | 3V | 240W Tc | 12A | SWITCHING | 0.65Ohm | 80 ns | SILICON | N-Channel | 650m Ω @ 6A, 10V | 5V @ 250μA | 1676pF @ 25V | 34nC @ 10V | 50ns | 60 ns | 30V | 600V | 12A Tc | 48A | 565 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||
FDP8880 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | ACTIVE (Last Updated: 3 days ago) | Through Hole | Tube | 2005 | PowerTrench® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | 54A | 3 | TO-220-3 | No SVHC | 9.65mm | 4.83mm | 11.6MOhm | Through Hole | 1.8g | -55°C~175°C TJ | 30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Not Qualified | 1 | TO-220AB | DRAIN | Single | 55W | 8 ns | 2.5V | 55W Tc | 54A | SWITCHING | 47 ns | SILICON | N-Channel | 11.6m Ω @ 40A, 10V | 2.5V @ 250μA | 1240pF @ 15V | 29nC @ 10V | 107ns | 51 ns | 20V | 30V | 2.5 V | 11A Ta 54A Tc | 4.5V 10V | ±20V | ||||||||||||||||||||||||||
FQP20N06 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 5 Weeks | ACTIVE (Last Updated: 2 days ago) | Through Hole | Tube | 2013 | QFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.1mm | ROHS3 Compliant | Lead Free | Tin | 20A | No | 3 | TO-220-3 | No SVHC | 9.4mm | 4.7mm | 70mOhm | Through Hole | 1.8g | -55°C~175°C TJ | 60V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | FET General Purpose Power | 1 | TO-220AB | Single | 53W | 5 ns | 4V | 53W Tc | 20A | SWITCHING | 20 ns | SILICON | N-Channel | 60m Ω @ 10A, 10V | 4V @ 250μA | 590pF @ 25V | 15nC @ 10V | 45ns | 20 ns | 25V | 60V | 20A Tc | 80A | 10V | ±25V | |||||||||||||||||||||||||||||
FDP6030BL | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | ACTIVE (Last Updated: 3 days ago) | Through Hole | Tube | 2000 | PowerTrench® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | 40A | No | 3 | TO-220-3 | 9.4mm | 4.83mm | 18MOhm | Through Hole | 1.8g | -65°C~175°C TJ | 30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | FET General Purpose Power | 1 | TO-220AB | Single | 60W | 9 ns | 60W Tc | 40A | SWITCHING | 23 ns | SILICON | N-Channel | 18m Ω @ 20A, 10V | 3V @ 250μA | 1160pF @ 15V | 17nC @ 5V | 11ns | 8 ns | 20V | 30V | 40A Tc | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
FQPF5N50CYDTU | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | ACTIVE (Last Updated: 4 days ago) | Through Hole | Tube | 2003 | QFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.16mm | ROHS3 Compliant | Lead Free | 5A | No | 3 | TO-220-3 Full Pack, Formed Leads | 15.87mm | 4.7mm | Through Hole | 2.565g | -55°C~150°C TJ | 500V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | FET General Purpose Power | 1 | TO-220AB | ISOLATED | Single | 38W | 12 ns | 38W Tc | 5A | SWITCHING | 50 ns | SILICON | N-Channel | 1.4 Ω @ 2.5A, 10V | 4V @ 250μA | 625pF @ 25V | 24nC @ 10V | 46ns | 48 ns | 30V | 500V | 5A | 5A Tc | 20A | 10V | ±30V | ||||||||||||||||||||||||||||||
FQH8N100C | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
4 Weeks | ACTIVE (Last Updated: 2 days ago) | Through Hole | Tube | 2013 | QFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 15.87mm | ROHS3 Compliant | 3 | TO-247-3 | not_compliant | 20.82mm | 4.82mm | Through Hole | 6.39g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Not Qualified | 1 | TO-247AB | Single | 225W | 50 ns | 225W Tc | 8A | SWITCHING | 122 ns | SILICON | N-Channel | 1.45 Ω @ 4A, 10V | 5V @ 250μA | 3220pF @ 25V | 70nC @ 10V | 95ns | 80 ns | 30V | 1kV | 8A | 8A Tc | 1000V | 850 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||
FQPF9P25 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | Tube | 2013 | QFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-220-3 Full Pack | not_compliant | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 8541.29.00.95 | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | Other Transistors | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | ISOLATED | 50W Tc | SWITCHING | 0.62Ohm | 250V | SILICON | P-Channel | 620m Ω @ 3A, 10V | 5V @ 250μA | 1180pF @ 25V | 38nC @ 10V | 6A | 6A Tc | 250V | 24A | 650 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
FQPF8N60CFT | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 9 Weeks | ACTIVE (Last Updated: 2 days ago) | Through Hole | Tube | 2013 | FRFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | No | 3 | TO-220-3 Full Pack | Through Hole | 2.27g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 8541.29.00.95 | e3 | Tin (Sn) | FET General Purpose Power | 1 | TO-220AB | ISOLATED | Single | 48W | 16.5 ns | 48W Tc | 6.26A | SWITCHING | 81 ns | SILICON | N-Channel | 1.5 Ω @ 3.13A, 10V | 4V @ 250μA | 1255pF @ 25V | 36nC @ 10V | 60.5ns | 64.5 ns | 30V | 600V | 6.26A Tc | 25A | 160 mJ | 10V | ±30V |
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