All Products
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RF/IF & RFID
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Microsemi Corporation(6096)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Reach Compliance Code | Mounting Type | Voltage - Rated DC | Technology | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Operating Temperature (Max) | Operating Temperature (Min) | Subcategory | Qualification Status | Reference Standard | Diode Element Material | Number of Elements | Configuration | Diode Type | Output Current-Max | Application | Number of Phases | Rep Pk Reverse Voltage-Max | JEDEC-95 Code | Non-rep Pk Forward Current-Max | Output Current | Forward Current | Forward Voltage | Case Connection | Element Configuration | Speed | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction | Max Reverse Voltage (DC) | Average Rectified Current | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Reverse Current-Max | Natural Thermal Resistance | Reverse Recovery Time | Power Dissipation-Max | Forward Voltage-Max | Reverse Recovery Time-Max | Capacitance @ Vr, F |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| JANTX1N5806 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/477 | no | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | Contains Lead | No | 2 | HIGH RELIABILITY | A, Axial | Through Hole | AVALANCHE | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Qualified | MIL-19500 | SILICON | 1 | Standard | 1A | 1 | 2.5A | 975mV | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 1μA @ 150V | 875mV @ 1A | -65°C~175°C | 150V | 1A | 1μA | 150V | 35A | 36 °C/W | 25 ns | 25pF @ 10V 1MHz | |||||||||||||||||||||||||||||
| JAN1N3612 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/228 | no | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | 2 | HIGH RELIABILITY | A, Axial | Through Hole | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | NOT SPECIFIED | NOT SPECIFIED | 2 | Qualified | MIL-19500 | SILICON | 1 | Standard | 1A | 1.1V | ISOLATED | Single | Standard Recovery >500ns, > 200mA (Io) | 100μA @ 300V | 1.1V @ 1A | -65°C~175°C | 400V | 1A | 30A | ||||||||||||||||||||||||||||||||||||
| JANTX1N5620 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/427 | no | Active | 1 (Unlimited) | 2 | EAR99 | 200°C | -65°C | Non-RoHS Compliant | Contains Lead | No | 2 | HIGH RELIABILITY | A, Axial | Through Hole | AVALANCHE | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Qualified | MIL-19500 | SILICON | 1 | Standard | 1A | 1.3V | ISOLATED | Single | Standard Recovery >500ns, > 200mA (Io) | 500nA @ 800V | 1.3V @ 3A | -65°C~200°C | 800V | 1A | 500nA | 800V | 30A | 2 μs | ||||||||||||||||||||||||||||||||
| JANTXV1N4150UR-1 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Surface Mount | Bulk | 1999 | Military, MIL-PRF-19500/231 | no | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | No | 2 | DO-213AA | Surface Mount | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 2 | Qualified | SILICON | 1 | Standard | 200mA | 1V | ISOLATED | Single | Small Signal =< 200mA (Io), Any Speed | 100nA @ 50V | 1V @ 200mA | -65°C~175°C | 100nA | 50V | 4A | 200mA DC | 4 ns | ||||||||||||||||||||||||||||||||||||
| JAN1N5819-1 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/586 | no | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -55°C | Non-RoHS Compliant | Lead, Tin | No | 2 | METALLURGICALLY BONDED | DO-204AL, DO-41, Axial | Through Hole | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Qualified | MIL-19500/586 | SILICON | 1 | Schottky | 1A | 45V | 1A | 850mV | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 50μA @ 45V | 490mV @ 1A | -65°C~150°C | 1nA | 40V | 50A | 45V | ||||||||||||||||||||||||||||||||||
| JAN1N5554 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Through Hole | Bulk | Military, MIL-PRF-19500/420 | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | Contains Lead | No | 2 | HIGH RELIABILITY | B, Axial | Through Hole | AVALANCHE | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Rectifier Diodes | Qualified | MIL-19500 | SILICON | 1 | Standard | 3A | GENERAL PURPOSE | 1 | 5A | 1.3V | ISOLATED | Single | Standard Recovery >500ns, > 200mA (Io) | 1μA @ 1000V | 1.3V @ 9A | -65°C~175°C | 1kV | 3A | 1μA | 1kV | 100A | 1000V | 2 μs | |||||||||||||||||||||||||||||
| JANTX1N5712-1 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/444 | no | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -65°C | Non-RoHS Compliant | Contains Lead | No | 2 | METALLURGICALLY BONDED | DO-204AH, DO-35, Axial | Through Hole | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Qualified | MIL-19500/444 | SILICON | 1 | Schottky | 0.075A | 16V | 75mA | 1V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 150nA @ 16V | 1V @ 35mA | -65°C~150°C | 20V | 750mA | 2pF @ 0V 1MHz | |||||||||||||||||||||||||||||||||||
| JANTX1N5809US | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Surface Mount | Bulk | 1997 | Military, MIL-PRF-19500/477 | no | Active | 1 (Unlimited) | 2 | 175°C | -65°C | Non-RoHS Compliant | Contains Lead | No | 2 | HIGH RELIABILITY, METALLURGICALLY BONDED | SQ-MELF, B | Surface Mount | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 2 | Qualified | MIL-19500 | SILICON | 1 | Standard | 3A | ULTRA FAST RECOVERY | 1 | 875mV | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 100V | 875mV @ 4A | -65°C~175°C | 100V | 3A | 125A | 30 ns | 5W | 60pF @ 10V 1MHz | |||||||||||||||||||||||||||||||
| 1N6623 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 17 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | no | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -65°C | Non-RoHS Compliant | Lead, Tin | 2 | HIGH RELIABILITY | A, Axial | Through Hole | AVALANCHE | 8541.10.00.80 | e0 | TIN LEAD | WIRE | NOT SPECIFIED | NOT SPECIFIED | 2 | Rectifier Diodes | Not Qualified | SILICON | 1 | Standard | 1A | 1A | 1.8V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 880V | 1.55V @ 1A | -65°C~150°C | 880V | 1A | 880V | 20A | 50 ns | 10pF @ 10V 1MHz | ||||||||||||||||||||||||||||||||
| JANTX1N5618US | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Surface Mount | Bulk | 1997 | Military, MIL-PRF-19500/427 | no | Active | 1 (Unlimited) | 2 | EAR99 | 200°C | -65°C | Non-RoHS Compliant | Contains Lead | No | 2 | METALLURGICALLY BONDED | SQ-MELF, A | Surface Mount | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 2 | Qualified | SILICON | 1 | Standard | 1A | 1.3V | ISOLATED | Single | Standard Recovery >500ns, > 200mA (Io) | 500nA @ 600V | 1.3V @ 3A | -65°C~200°C | 600V | 1A | 500nA | 600V | 30A | 2 μs | |||||||||||||||||||||||||||||||||
| 1N6627 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 17 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | Through Hole | Bulk | 1997 | Active | 1 (Unlimited) | 2 | 150°C | -65°C | Non-RoHS Compliant | Yes | 2 | METALLURGICALLY BONDED, HIGH RELIABILITY | A, Axial | Through Hole | AVALANCHE | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | NOT SPECIFIED | NOT SPECIFIED | 2 | Not Qualified | SILICON | 1 | Standard | ULTRA FAST RECOVERY | 1 | 1.75A | 1.5V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 2μA @ 440V | 1.35V @ 2A | -65°C~150°C | 440V | 1.75A | 2μA | 440V | 75A | 30 ns | 40pF @ 10V 1MHz | ||||||||||||||||||||||||||||||||
| JANTX1N5419 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/411 | Active | 1 (Unlimited) | 2 | 175°C | -65°C | Non-RoHS Compliant | Yes | 2 | B, Axial | not_compliant | Through Hole | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | NOT SPECIFIED | NOT SPECIFIED | 2 | Qualified | MIL-19500/411L | SILICON | 1 | Standard | 3A | FAST RECOVERY POWER | 1 | 1.5V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 1μA @ 500V | 1.5V @ 9A | -65°C~175°C | 500V | 3A | 1μA | 500V | 80A | 250 ns | |||||||||||||||||||||||||||||||||
| UES2604R | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Bulk | 1996 | no | Active | Not Applicable | 2 | 150°C | -55°C | Non-RoHS Compliant | Lead Free | No | 3 | 8541.10.00.80 | e0 | TIN LEAD | BOTTOM | PIN/PEG | 2 | O-MBFM-P2 | Rectifier Diodes | SILICON | 2 | RECTIFIER DIODE | ULTRA FAST RECOVERY | 1 | 30A | Common Cathode | 50μA | 200V | 300A | 50 ns | 1.25V | |||||||||||||||||||||||||||||||||||||||||||
| JANTX1N3957 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | Military, MIL-PRF-19500/228 | no | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | No | 2 | HIGH RELIABILITY | A, Axial | Through Hole | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Qualified | MIL-19500 | SILICON | 1 | Standard | 1A | DO-41 | 1.1V | ISOLATED | Single | Standard Recovery >500ns, > 200mA (Io) | 1μA @ 1000V | 1.1V @ 1A | -65°C~175°C | 1kV | 1A | 1μA | 1kV | 30A | 1000V | ||||||||||||||||||||||||||||||||||
| CDLL5712 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Surface Mount | Bulk | 1997 | no | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -65°C | Non-RoHS Compliant | No | 2 | METALLURGICALLY BONDED | DO-213AA | Surface Mount | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 2 | SILICON | 1 | Schottky | 0.075A | 75mA | 1V | ISOLATED | Single | Small Signal =< 200mA (Io), Any Speed | 150nA @ 16V | 1V @ 35mA | -65°C~150°C | 20V | 75mA | 20V | 250 °C/W | 2pF @ 0V 1MHz | ||||||||||||||||||||||||||||||||||||
| 1N6622US | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 17 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Surface Mount | Bulk | 1997 | no | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -65°C | Non-RoHS Compliant | Contains Lead | Lead, Tin | Yes | 2 | HIGH RELIABILITY | SQ-MELF, A | not_compliant | Surface Mount | AVALANCHE | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | NOT SPECIFIED | NOT SPECIFIED | 2 | Not Qualified | SILICON | 1 | Standard | ULTRA FAST RECOVERY | 1 | 1.2A | 1.6V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 660V | 1.4V @ 1.2A | -65°C~150°C | 660V | 1.2A | 500nA | 660V | 20A | 13 °C/W | 30 ns | 10pF @ 10V 1MHz | |||||||||||||||||||||||||
| JANTXV1N5806US | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Surface Mount | Bulk | 1997 | Military, MIL-PRF-19500/477 | Active | 1 (Unlimited) | 2 | 175°C | -65°C | Non-RoHS Compliant | No | 2 | SQ-MELF, A | Surface Mount | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 2 | Qualified | MIL-19500/477F | SILICON | 1 | Standard | ULTRA FAST RECOVERY POWER | 1 | 2.5A | 975mV | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 1μA @ 150V | 875mV @ 1A | -65°C~175°C | 150V | 1A | 1μA | 150V | 35A | 25 ns | 25pF @ 10V 1MHz | |||||||||||||||||||||||||||||||||
| JANTX1N5188 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | IN PRODUCTION (Last Updated: 4 weeks ago) | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/424 | Active | 1 (Unlimited) | 2 | 175°C | -65°C | Non-RoHS Compliant | Contains Lead | No | 2 | B, Axial | Through Hole | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier | WIRE | 2 | Qualified | SILICON | 1 | Standard | 3A | FAST RECOVERY POWER | 1 | 3A | 1.5V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 2μA @ 400V | 1.5V @ 9A | -65°C~175°C | 400V | 3A | 2μA | 400V | 80A | 250 ns | ||||||||||||||||||||||||||||||||||
| 1N6620US | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 17 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Surface Mount | Bulk | 1997 | no | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -65°C | Non-RoHS Compliant | Lead, Tin | 2 | HIGH RELIABILITY | SQ-MELF, A | not_compliant | Surface Mount | AVALANCHE | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | NOT SPECIFIED | NOT SPECIFIED | 2 | Not Qualified | SILICON | 1 | Standard | ULTRA FAST RECOVERY | 1 | 1.2A | 1.6V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 220V | 1.4V @ 1.2A | -65°C~150°C | 220V | 1.2A | 220V | 20A | 0.5μA | 13 °C/W | 30 ns | 10pF @ 10V 1MHz | |||||||||||||||||||||||||||
| JANTXV1N5811US | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Bulk | 1997 | Military, MIL-PRF-19500/477 | no | Active | 1 (Unlimited) | 2 | 175°C | -65°C | Non-RoHS Compliant | Contains Lead | No | 2 | HIGH RELIABILITY, METALLURGICALLY BONDED | SQ-MELF, B | Surface Mount | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 2 | Qualified | MIL-19500 | SILICON | 1 | Standard | 3A | ULTRA FAST RECOVERY | 1 | 6A | 875mV | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 150V | 875mV @ 4A | -65°C~175°C | 150V | 3A | 5μA | 150V | 125A | 30 ns | 5W | 60pF @ 10V 1MHz | |||||||||||||||||||||||||||||
| JANTX1N5802 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/477 | no | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | No | 2 | HIGH RELIABILITY | A, Axial | Through Hole | AVALANCHE | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | Qualified | MIL-19500 | SILICON | 1 | Standard | 1A | 1 | 975mV | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 1μA @ 50V | 875mV @ 1A | -65°C~175°C | 50V | 1A | 1μA | 50V | 35A | 25 ns | 25pF @ 10V 1MHz | |||||||||||||||||||||||||||||||||
| UFR7015 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Stud | Bulk | 1997 | no | Active | 1 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | Lead Free | No | 2 | HIGH RELIABILITY | 8541.10.00.80 | e0 | TIN LEAD | UPPER | SOLDER LUG | 1 | O-MUPM-D1 | Rectifier Diodes | SILICON | 1 | RECTIFIER DIODE | FAST RECOVERY | 1 | 70A | CATHODE | Single | 25μA | 150V | 1kA | 50 ns | 0.975V | |||||||||||||||||||||||||||||||||||||||||
| JANTX1N5552US | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Surface Mount | Bulk | 1997 | Military, MIL-PRF-19500/420 | Active | 1 (Unlimited) | 2 | 175°C | -65°C | Non-RoHS Compliant | No | 2 | SQ-MELF, B | Surface Mount | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 235 | 20 | 2 | Qualified | SILICON | 1 | Standard | 3A | POWER | 1 | 5A | 1.2V | ISOLATED | Single | Standard Recovery >500ns, > 200mA (Io) | 1μA @ 600V | 1.2V @ 9A | -65°C~175°C | 1μA | 600V | 100A | 2 μs | ||||||||||||||||||||||||||||||||||
| UES702 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | IN PRODUCTION (Last Updated: 1 month ago) | Chassis, Stud | Bulk | 1997 | no | Discontinued | Not Applicable | 1 | EAR99 | 150°C | -55°C | RoHS Compliant | Lead Free | 25A | No | 2 | DO-203AA, DO-4, Stud | Chassis, Stud Mount | 100V | 8541.10.00.80 | e0 | TIN LEAD | UPPER | SOLDER LUG | O-MUPM-D1 | Rectifier Diodes | SILICON | 1 | Standard | EFFICIENCY | 1 | 25A | 25A | CATHODE | Single | Fast Recovery =< 500ns, > 200mA (Io) | 20μA @ 100V | 950mV @ 25A | -55°C~175°C | 100V | 25A | 20μA | 100V | 400A | 35 ns | ||||||||||||||||||||||||||||||||
| 1N1124A | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | 1997 | no | Active | 1 | Non-RoHS Compliant | 8541.10.00.80 | e0 | TIN LEAD | UPPER | SOLDER LUG | NOT SPECIFIED | NOT SPECIFIED | 1 | NO | O-MUPM-D1 | 200°C | Rectifier Diodes | Not Qualified | MIL-19500/260G | SILICON | 1 | SINGLE | RECTIFIER DIODE | 3.3A | POWER | 1 | 200V | DO-203AA | 25A | CATHODE | 1.2V | 0.5μs | |||||||||||||||||||||||||||||||||||||||||||
| APT30SCD120S | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | Surface Mount | Tube | 1999 | Obsolete | 1 (Unlimited) | EAR99 | RoHS Compliant | Lead Free | 3 | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Surface Mount | 8541.10.00.80 | 150°C | Rectifier Diodes | 1 | SINGLE | Silicon Carbide Schottky | No Recovery Time > 500mA (Io) | 600μA @ 1200V | 1.8V @ 30A | -55°C~150°C | 1.2kV | 99A | 1200V | 99A DC | 0 s | 2100pF @ 0V 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N4938-1 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 1999 | Military, MIL-PRF-19500/169 | no | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | No | 2 | DO-204AH, DO-35, Axial | Through Hole | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Qualified | SILICON | 1 | Standard | 100mA | 1V | ISOLATED | Single | Small Signal =< 200mA (Io), Any Speed | 100μA @ 200V | 1V @ 100mA | -65°C~175°C | 200V | 2A | 175V | 100mA DC | 50 ns | 0.5W | |||||||||||||||||||||||||||||||||||||
| 1N1614 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Active | 1 | Non-RoHS Compliant | 8541.10.00.80 | e0 | TIN LEAD | UPPER | SOLDER LUG | NOT SPECIFIED | NOT SPECIFIED | 1 | NO | O-MUPM-D1 | 175°C | -65°C | Rectifier Diodes | Not Qualified | SILICON | 1 | SINGLE | RECTIFIER DIODE | 15A | POWER | 1 | 200V | DO-203AA | 100A | ANODE | 1.5V | 5μs | |||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5196 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/118 | no | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | No | 2 | DO-204AH, DO-35, Axial | Through Hole | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Qualified | MIL-19500/118F | SILICON | 1 | Standard | 200mA | 1V | ISOLATED | Single | Small Signal =< 200mA (Io), Any Speed | 1μA @ 250V | 1V @ 100mA | -65°C~175°C | 225V | 2A | |||||||||||||||||||||||||||||||||||||||
| SBR6030L | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Stud | Bulk | no | Active | 1 (Unlimited) | 1 | EAR99 | 150°C | -65°C | Non-RoHS Compliant | No | 2 | REVERSE ENERGY TESTED | DO-203AB, DO-5, Stud | Stud Mount | 8541.10.00.80 | e0 | TIN LEAD | UPPER | SOLDER LUG | 1 | O-MUPM-D1 | Rectifier Diodes | SILICON | 1 | Schottky | GENERAL PURPOSE | 1 | 60A | 480mV | CATHODE | Single | Fast Recovery =< 500ns, > 200mA (Io) | 5mA @ 30V | 480mV @ 60A | -65°C~150°C | 30V | 60A | 5mA | 30V | 1.2kA | 60A DC |