Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Height | Width | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Input Type | JESD-609 Code | Terminal Finish | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Number of Elements | JEDEC-95 Code | Case Connection | Polarity/Channel Type | Element Configuration | Turn On Delay Time | Supplier Device Package | Reverse Recovery Time | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Transistor Application | Turn-Off Delay Time | Transistor Element Material | Collector Emitter Saturation Voltage | Turn On Time | Vce(on) (Max) @ Vge, Ic | Turn Off Time-Nom (toff) | IGBT Type | Gate-Emitter Voltage-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Continuous Collector Current | Gate-Emitter Thr Voltage-Max | Test Condition | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy |
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APT40GP60BG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 5 Weeks | Through Hole | Tube | 1999 | POWER MOS 7® | yes | Active | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | 100A | No | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | -55°C~150°C TJ | 600V | Standard | e1 | TIN SILVER COPPER | 3 | R-PSFM-T3 | 543W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 100A | 600V | 600V | POWER CONTROL | SILICON | 49 ns | 2.7V @ 15V, 40A | 158 ns | PT | 400V, 40A, 5 Ω, 15V | 135nC | 160A | 20ns/64ns | 385μJ (on), 352μJ (off) | |||||||||||||||||||||||||||
APT15GT60KRG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2008 | Thunderbolt IGBT® | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | 42A | No | 3 | TO-220-3 | Through Hole | -55°C~150°C TJ | 600V | Standard | e3 | PURE MATTE TIN | 3 | Insulated Gate BIP Transistors | 184W | 1 | TO-220AB | COLLECTOR | N-CHANNEL | Single | 42A | 600V | 2.5V | POWER CONTROL | SILICON | 14 ns | 2.5V @ 15V, 15A | 225 ns | NPT | 5V | 400V, 15A, 10 Ω, 15V | 75nC | 45A | 6ns/105ns | 150μJ (on), 215μJ (off) | ||||||||||||||||||||||||||||
APT33GF120LRDQ2G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 38 Weeks | Through Hole | Tube | 1999 | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | 64A | No | TO-264-3, TO-264AA | Through Hole | -55°C~150°C TJ | 1.2kV | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 357W | 1 | COLLECTOR | N-CHANNEL | Single | 64A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 31 ns | 3V @ 15V, 25A | 355 ns | NPT | 30V | 1200V | 6.5V | 800V, 25A, 4.3 Ω, 15V | 170nC | 75A | 14ns/185ns | 1.315mJ (on), 1.515mJ (off) | ||||||||||||||||||||||||||
APT20GF120BRG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2000 | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | 32A | No | AVALANCHE RATED | TO-247-3 | Through Hole | -55°C~150°C TJ | 1.2kV | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | R-PSFM-T3 | 200W | 1 | COLLECTOR | N-CHANNEL | Single | 32A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 20 ns | 3.2V @ 15V, 15A | 175 ns | NPT | 1200V | 95nC | 64A | 17ns/105ns | 2.7mJ | |||||||||||||||||||||||||||||||
APT20GT60BRG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | Through Hole | Tube | 1999 | Thunderbolt IGBT® | yes | Active | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | 43A | No | TO-247-3 | Through Hole | -55°C~150°C TJ | 600V | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 174W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 43A | 600V | 600V | POWER CONTROL | SILICON | 17 ns | 2.5V @ 15V, 20A | 160 ns | NPT | 30V | 5V | 400V, 20A, 5 Ω, 15V | 100nC | 80A | 8ns/80ns | 215μJ (on), 245μJ (off) | |||||||||||||||||||||||||
APT25GP90BG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Through Hole | Tube | 1999 | POWER MOS 7® | yes | Active | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | 72A | No | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | -55°C~150°C TJ | 900V | Standard | e1 | TIN SILVER COPPER | 3 | R-PSFM-T3 | 417W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 72A | 900V | 900V | POWER CONTROL | SILICON | 29 ns | 3.9V @ 15V, 25A | 190 ns | PT | 600V, 25A, 5 Ω, 15V | 110nC | 110A | 13ns/55ns | 370μJ (off) | ||||||||||||||||||||||||||||
APT102GA60B2 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 1999 | POWER MOS 8™ | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | No | LOW CONDUCTION LOSS | TO-247-3 Variant | Through Hole | -55°C~150°C TJ | Standard | e1 | TIN SILVER COPPER | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 780W | 780W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 183A | 600V | 600V | POWER CONTROL | SILICON | 64 ns | 2.5V @ 15V, 62A | 389 ns | PT | 30V | 6V | 400V, 62A, 4.7 Ω, 15V | 294nC | 307A | 28ns/212ns | 1.354mJ (on), 1.614mJ (off) | ||||||||||||||||||||||||||||
APT50GS60BRDLG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | Through Hole | Tube | 1999 | Active | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | No | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | 415W | 415W | Single | TO-247 | 93A | 600V | 600V | 3.15V @ 15V, 50A | NPT | 600V | 93A | 400V, 50A, 4.7Ohm, 15V | 235nC | 195A | 16ns/225ns | 755μJ (off) | |||||||||||||||||||||||||||||||||||||||||
APT30GS60BRDLG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | OBSOLETE (Last Updated: 3 weeks ago) | Through Hole | Tube | 1999 | yes | Active | 1 (Unlimited) | 3 | RoHS Compliant | No | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | R-PSFM-T3 | 250W | 250W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 54A | 600V | 600V | POWER CONTROL | SILICON | 45 ns | 3.15V @ 15V, 30A | 412 ns | NPT | 400V, 30A, 9.1 Ω, 15V | 145nC | 113A | 16ns/360ns | 570μJ (off) | ||||||||||||||||||||||||||||||||
APT30GP60B2DLG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | OBSOLETE (Last Updated: 3 weeks ago) | Through Hole | Tube | 2001 | yes | Active | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | No | 3 | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Insulated Gate BIP Transistors | 463W | 463W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 100A | 600V | 600V | MOTOR CONTROL | SILICON | 31 ns | 2.7V @ 15V, 30A | 164 ns | PT | 20V | 6V | 400V, 30A, 5 Ω, 15V | 90nC | 120A | 13ns/55ns | 260μJ (on), 250μJ (off) | ||||||||||||||||||||||||||
APT25GR120BD15 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 29 Weeks | IN PRODUCTION (Last Updated: 2 days ago) | Through Hole | Tube | 2001 | Active | 1 (Unlimited) | EAR99 | 21.46mm | RoHS Compliant | Lead Free | TO-247-3 | 5.31mm | 16.26mm | Through Hole | 38.000013g | -55°C~150°C TJ | Standard | Insulated Gate BIP Transistors | 521W | N-CHANNEL | Single | 75A | 1.2kV | 1.2kV | 2.5V | 3.2V @ 15V, 25A | NPT | 30V | 1200V | 75A | 6.5V | 600V, 25A, 4.3 Ω, 15V | 203nC | 100A | 16ns/122ns | 742μJ (on), 427μJ (off) | ||||||||||||||||||||||||||||||||||
APT75GP120B2G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 23 Weeks | Through Hole | Tube | 1999 | POWER MOS 7® | yes | Active | 1 (Unlimited) | 3 | 21.46mm | RoHS Compliant | Lead Free | 100A | No | 3 | ULTRA FAST, LOW CONDUCTION LOSS | TO-247-3 Variant | 5.31mm | 16.26mm | Through Hole | -55°C~150°C TJ | 1.2kV | Standard | e1 | TIN SILVER COPPER | 3 | 1.042kW | 1042W | 1 | COLLECTOR | N-CHANNEL | Single | 100A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 3.3V | 60 ns | 3.9V @ 15V, 75A | 359 ns | PT | 1200V | 100A | 600V, 75A, 5 Ω, 15V | 320nC | 300A | 20ns/163ns | 1620μJ (on), 2500μJ (off) | ||||||||||||||||||||||
APT25GR120B | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Bulk | 2001 | Active | 1 (Unlimited) | RoHS Compliant | Lead Free | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | Insulated Gate BIP Transistors | 521W | 521W | N-CHANNEL | Single | 16 ns | 75A | 1.2kV | 3.2V | 122 ns | 3.2V @ 15V, 25A | NPT | 30V | 1200V | 6.5V | 600V, 25A, 4.3 Ω, 15V | 203nC | 100A | 16ns/122ns | 742μJ (on), 427μJ (off) | |||||||||||||||||||||||||||||||||||||||
APT25GT120BRG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Through Hole | Tube | 1999 | Thunderbolt IGBT® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 21.46mm | RoHS Compliant | Lead Free | 54A | No | TO-247-3 | 5.31mm | 16.26mm | Through Hole | 38.000013g | -55°C~150°C TJ | 1.2kV | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | R-PSFM-T3 | 347W | 1 | TO-247AA | COLLECTOR | N-CHANNEL | Single | 54A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 3.2V | 41 ns | 3.7V @ 15V, 25A | 220 ns | NPT | 1200V | 54A | 800V, 25A, 5 Ω, 15V | 170nC | 75A | 14ns/150ns | 930μJ (on), 720μJ (off) | |||||||||||||||||||||
APT75GN120LG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Through Hole | Tube | 1999 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 26.49mm | RoHS Compliant | Lead Free | 200A | No | HIGH RELIABILITY | TO-264-3, TO-264AA | 5.21mm | 20.5mm | Through Hole | 10.6g | -55°C~150°C TJ | 1.2kV | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 833W | 1 | COLLECTOR | N-CHANNEL | Single | 60 ns | 200A | 1.2kV | 1.2kV | POWER CONTROL | 620 ns | SILICON | 1.7V | 101 ns | 2.1V @ 15V, 75A | 925 ns | Trench Field Stop | 30V | 1200V | 200A | 6.5V | 800V, 75A, 1 Ω, 15V | 425nC | 225A | 60ns/620ns | 8620μJ (on), 11400μJ (off) | |||||||||||||||||
APT50GT60BRDQ2G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 25 Weeks | Through Hole | Tube | 1999 | Thunderbolt IGBT® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 21.46mm | RoHS Compliant | Lead Free | 110A | No | TO-247-3 | 5.31mm | 16.26mm | Through Hole | 38.000013g | -55°C~150°C TJ | 600V | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 446W | 1 | COLLECTOR | N-CHANNEL | Single | 22 ns | 110A | 600V | 600V | POWER CONTROL | SILICON | 2V | 46 ns | 2.5V @ 15V, 50A | 365 ns | NPT | 30V | 110A | 5V | 400V, 50A, 5 Ω, 15V | 240nC | 150A | 14ns/240ns | 995μJ (on), 1070μJ (off) | |||||||||||||||||||
APT70GR65B | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | Through Hole | Tube | 2001 | Active | 1 (Unlimited) | EAR99 | RoHS Compliant | Lead Free | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | 595W | 595W | 134A | 650V | 2.4V | 2.4V @ 15V, 70A | NPT | 433V, 70A, 4.3 Ω, 15V | 305nC | 260A | 19ns/170ns | 1.51mJ (on), 1.46mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||
APT54GA60BD30 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 33 Weeks | Through Hole | Tube | 1999 | yes | Active | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | No | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | Pure Matte Tin (Sn) | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 416W | 416W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 96A | 600V | 600V | POWER CONTROL | SILICON | 37 ns | 2.5V @ 15V, 32A | 291 ns | PT | 30V | 6V | 400V, 32A, 4.7 Ω, 15V | 28nC | 161A | 17ns/112ns | 534μJ (on), 466μJ (off) | ||||||||||||||||||||||||||||
APT40GR120S | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 19 Weeks | Surface Mount | Tube | 2001 | Active | 1 (Unlimited) | EAR99 | RoHS Compliant | Lead Free | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~150°C TJ | Standard | Insulated Gate BIP Transistors | 500W | 500W | N-CHANNEL | 88A | 1.2kV | 3.2V | 3.2V @ 15V, 40A | NPT | 30V | 1200V | 6V | 600V, 40A, 4.3 Ω, 15V | 210nC | 160A | 22ns/163ns | 1.38mJ (on), 906μJ (off) | |||||||||||||||||||||||||||||||||||||||||
APT100GN60B2G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Through Hole | Tube | 1999 | yes | Active | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | 229A | No | 3 | HIGH RELIABILITY | TO-247-3 Variant | Through Hole | -55°C~175°C TJ | 600V | Standard | e1 | TIN SILVER COPPER | 3 | Insulated Gate BIP Transistors | 625W | 1 | COLLECTOR | N-CHANNEL | Single | 229A | 600V | 600V | POWER CONTROL | SILICON | 96 ns | 1.85V @ 15V, 100A | 435 ns | Trench Field Stop | 6.5V | 400V, 100A, 1 Ω, 15V | 600nC | 300A | 31ns/310ns | 4.7mJ (on), 2.675mJ (off) | ||||||||||||||||||||||||||||
APT50GR120L | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 21 Weeks | IN PRODUCTION (Last Updated: 2 days ago) | Through Hole | Tube | 2001 | Active | 1 (Unlimited) | RoHS Compliant | Lead Free | TO-264-3, TO-264AA | Through Hole | -55°C~150°C TJ | Standard | Insulated Gate BIP Transistors | 694W | 694W | N-CHANNEL | 117A | 1.2kV | 3.2V | 3.2V @ 15V, 50A | NPT | 30V | 1200V | 6.5V | 600V, 50A, 4.3 Ω, 15V | 445nC | 200A | 28ns/237ns | 2.14mJ (on), 1.48mJ (off) | |||||||||||||||||||||||||||||||||||||||||
APT15GT120BRDQ1G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 29 Weeks | Through Hole | Tube | 1999 | Thunderbolt IGBT® | yes | Active | 1 (Unlimited) | 3 | 21.46mm | RoHS Compliant | Contains Lead | 36A | No | HIGH SPEED | TO-247-3 | 5.31mm | 16.26mm | Through Hole | 38.000013g | -55°C~150°C TJ | 1.2kV | Standard | e1 | TIN SILVER COPPER | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 250W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 36A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 3.2V | 21 ns | 3.6V @ 15V, 15A | 137 ns | NPT | 30V | 1200V | 36A | 6.5V | 800V, 15A, 5 Ω, 15V | 105nC | 45A | 10ns/85ns | 585μJ (on), 260μJ (off) | ||||||||||||||||||
APT35GA90B | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 32 Weeks | Through Hole | Tube | POWER MOS 8™ | yes | Active | 1 (Unlimited) | 3 | RoHS Compliant | No | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | e1 | TIN SILVER COPPER | 3 | R-PSFM-T3 | 290W | 290W | 1 | COLLECTOR | N-CHANNEL | Single | 63A | 900V | 900V | POWER CONTROL | SILICON | 25 ns | 3.1V @ 15V, 18A | 298 ns | PT | 600V, 18A, 10 Ω, 15V | 84nC | 105A | 12ns/104ns | 642μJ (on), 382μJ (off) | ||||||||||||||||||||||||||||||||
APT15GP60BG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Through Hole | Tube | 1999 | POWER MOS 7® | yes | Not For New Designs | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | 56A | No | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | -55°C~150°C TJ | 600V | Standard | e1 | TIN SILVER COPPER | 3 | R-PSFM-T3 | 250W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 56A | 600V | 600V | POWER CONTROL | SILICON | 20 ns | 2.7V @ 15V, 15A | 157 ns | PT | 400V, 15A, 5 Ω, 15V | 55nC | 65A | 8ns/29ns | 130μJ (on), 121μJ (off) | ||||||||||||||||||||||||||||
APT30GT60BRG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Through Hole | Tube | 1999 | Thunderbolt IGBT® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 21.46mm | RoHS Compliant | Lead Free | 64A | No | TO-247-3 | 5.31mm | 16.26mm | Through Hole | 38.000013g | -55°C~150°C TJ | 600V | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 250W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 64A | 600V | 600V | POWER CONTROL | SILICON | 2V | 32 ns | 2.5V @ 15V, 30A | 345 ns | NPT | 30V | 64A | 5V | 400V, 30A, 10 Ω, 15V | 145nC | 110A | 12ns/225ns | 525μJ (on), 600μJ (off) | |||||||||||||||||||
APT45GR65BSCD10 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
22 Weeks | Through Hole | Bulk | 2001 | Obsolete | 1 (Unlimited) | RoHS Compliant | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | Insulated Gate BIP Transistors | 543W | 543W | N-CHANNEL | 80 ns | 118A | 650V | 2.4V | 2.4V @ 15V, 45A | NPT | 30V | 6.5V | 433V, 45A, 4.3 Ω, 15V | 203nC | 224A | 15ns/100ns | |||||||||||||||||||||||||||||||||||||||||||||
APT50GT60BRG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Through Hole | Tube | 1999 | Thunderbolt IGBT® | yes | Active | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | 110A | No | TO-247-3 | Through Hole | -55°C~150°C TJ | 600V | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | R-PSFM-T3 | 446W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 110A | 600V | 600V | POWER CONTROL | SILICON | 46 ns | 2.5V @ 15V, 50A | 365 ns | NPT | 400V, 50A, 4.3 Ω, 15V | 240nC | 150A | 14ns/240ns | 995μJ (on), 1070μJ (off) | ||||||||||||||||||||||||||||
APT50GN120L2DQ2G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 29 Weeks | Through Hole | Tube | 1999 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 26.49mm | RoHS Compliant | Lead Free | 134A | No | 3 | HIGH RELIABILITY | TO-264-3, TO-264AA | 5.21mm | 20.5mm | Through Hole | 10.6g | -55°C~150°C TJ | 1.2kV | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Insulated Gate BIP Transistors | 543W | 1 | COLLECTOR | N-CHANNEL | Single | 28 ns | 134A | 1.2kV | 1.2kV | POWER CONTROL | 320 ns | SILICON | 1.7V | 55 ns | 2.1V @ 15V, 50A | 600 ns | NPT, Trench Field Stop | 1200V | 134A | 6.5V | 800V, 50A, 2.2 Ω, 15V | 315nC | 150A | 28ns/320ns | 4495μJ (off) | ||||||||||||||||||
APT35GN120BG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Through Hole | Tube | 1999 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 21.46mm | RoHS Compliant | Lead Free | 94A | HIGH RELIABILITY | TO-247-3 | 5.31mm | 16.26mm | Through Hole | 38.000013g | -55°C~150°C TJ | 1.2kV | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 379W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 94A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 1.7V | 46 ns | 2.1V @ 15V, 35A | 465 ns | NPT, Trench Field Stop | 30V | 1200V | 94A | 6.5V | 800V, 35A, 2.2 Ω, 15V | 220nC | 105A | 24ns/300ns | 2.315mJ (off) | ||||||||||||||||
APT95GR65B2 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 35 Weeks | Through Hole | Tube | 2001 | Active | 1 (Unlimited) | RoHS Compliant | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | 892W | 892W | T-MAX™ [B2] | 208A | 650V | 2.4V | 2.4V @ 15V, 95A | NPT | 650V | 208A | 433V, 95A, 4.3Ohm, 15V | 420nC | 400A | 29ns/226ns | 3.12mJ (on), 2.55mJ (off) |
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