All Products
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Integrated Circuits (ICs)
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RF/IF & RFID
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Microsemi Corporation(6096)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Reach Compliance Code | Height | Width | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Operating Temperature (Max) | Operating Temperature (Min) | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Reference Standard | Diode Element Material | Number of Elements | Configuration | Diode Type | Output Current-Max | Application | Number of Phases | Rep Pk Reverse Voltage-Max | JEDEC-95 Code | Non-rep Pk Forward Current-Max | Forward Current | Forward Voltage | Case Connection | Polarity/Channel Type | Element Configuration | Turn On Delay Time | Input | Speed | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction | Max Reverse Voltage (DC) | Average Rectified Current | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Reverse Current-Max | Reverse Recovery Time | Power Dissipation-Max | Forward Voltage-Max | Max Collector Current | Reverse Recovery Time-Max | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Capacitance @ Vr, F | Transistor Application | Turn-Off Delay Time | Transistor Element Material | Input Capacitance | Current - Collector Cutoff (Max) | Collector Emitter Saturation Voltage | Turn On Time | Vce(on) (Max) @ Vge, Ic | Turn Off Time-Nom (toff) | IGBT Type | NTC Thermistor | Gate-Emitter Voltage-Max | Input Capacitance (Cies) @ Vce | VCEsat-Max | Voltage - Collector Emitter Breakdown (Max) | Continuous Collector Current | Gate-Emitter Thr Voltage-Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| JANTX1N5619US | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Surface Mount | Bulk | 1997 | Military, MIL-PRF-19500/429 | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | Contains Lead | No | 2 | SQ-MELF, A | Surface Mount | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 2 | Qualified | SILICON | 1 | Standard | 1A | 1.6V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 600V | 1.6V @ 3A | -65°C~175°C | 500nA | 600V | 30A | 1A | 250 ns | 25pF @ 12V 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N5188 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | Military, MIL-PRF-19500/424 | Active | 1 (Unlimited) | 2 | 175°C | -65°C | Non-RoHS Compliant | No | 2 | B, Axial | Through Hole | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier | WIRE | 2 | Qualified | SILICON | 1 | Standard | 3A | FAST RECOVERY POWER | 1 | 3A | 1.5V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 2μA @ 400V | 1.5V @ 9A | -65°C~175°C | 2μA | 400V | 80A | 250 ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N1614 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Stud | Bulk | 1997 | no | Active | 1 | 175°C | -55°C | Non-RoHS Compliant | No | 2 | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | UPPER | SOLDER LUG | 1 | O-MUPM-D1 | Qualified | SILICON | 1 | RECTIFIER DIODE | POWER | 1 | 15A | 1.5V | Single | 50μA | 200V | 100A | 5μs | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N3613 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/228 | no | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -55°C | Non-RoHS Compliant | No | 2 | HIGH RELIABILITY | A, Axial | Through Hole | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Qualified | MIL-19500 | SILICON | 1 | Standard | 1A | DO-41 | 1.1V | ISOLATED | Single | Standard Recovery >500ns, > 200mA (Io) | 100μA @ 300V | 1.1V @ 1A | -65°C~175°C | 600V | 1A | 1μA | 600V | 30A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N457 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Bulk | Military, MIL-PRF-19500/193 | no | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -65°C | Non-RoHS Compliant | No | 2 | DO-204AH, DO-35, Axial | Through Hole | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Qualified | MIL-19500/193D | SILICON | 1 | Standard | 0.075A | 225mA | 1V | ISOLATED | Single | Small Signal =< 200mA (Io), Any Speed | 25nA @ 70V | 1V @ 100mA | -65°C~150°C | 1μA | 70V | 1A | 150mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N645-1 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/240 | no | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | No | 2 | METALLURGICALLY BONDED | DO-204AH, DO-35, Axial | Through Hole | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | WIRE | Qualified | MIL-19500 | SILICON | 1 | Standard | 0.4A | 400mA | 1V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 50nA @ 225V | 1V @ 400mA | -65°C~175°C | 225V | 5A | 400mA DC | 0.5W | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5552US | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 7 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Surface Mount | Bulk | 1997 | Active | 1 (Unlimited) | 2 | 175°C | -65°C | Non-RoHS Compliant | Lead, Tin | Yes | 2 | SQ-MELF, B | Surface Mount | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 235 | 20 | 2 | Qualified | SILICON | 1 | Standard | 3A | POWER | 1 | 5A | 1.2V | ISOLATED | Single | Standard Recovery >500ns, > 200mA (Io) | 1μA @ 600V | 1.2V @ 9A | -65°C~175°C | 600V | 3A | 1μA | 600V | 100A | 2 μs | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5551US | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Bulk | 1997 | Military, MIL-PRF-19500/420 | Active | 1 (Unlimited) | 2 | 175°C | -65°C | Non-RoHS Compliant | No | 2 | SQ-MELF, B | Surface Mount | AVALANCHE | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 235 | 20 | Qualified | SILICON | 1 | Standard | 3A | POWER | 1 | 5A | 1.2V | ISOLATED | Single | Standard Recovery >500ns, > 200mA (Io) | 1μA @ 400V | 1.2V @ 9A | -65°C~175°C | 1μA | 400V | 100A | 2 μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N5819-1 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/586 | no | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -55°C | Non-RoHS Compliant | Contains Lead | No | 2 | METALLURGICALLY BONDED | DO-204AL, DO-41, Axial | Through Hole | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Qualified | MIL-19500/586 | SILICON | 1 | Schottky | 1A | 45V | 1A | 850mV | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 50μA @ 45V | 490mV @ 1A | -65°C~125°C | 1nA | 40V | 50A | 45V | 70pF @ 5V 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N6621US | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Surface Mount | Bulk | Military, MIL-PRF-19500/585 | no | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -65°C | Non-RoHS Compliant | Contains Lead | Lead, Tin | 2 | HIGH RELIABILITY | SQ-MELF, A | Surface Mount | AVALANCHE | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | NOT SPECIFIED | NOT SPECIFIED | 2 | Qualified | MIL-19500 | SILICON | 1 | Standard | ULTRA FAST RECOVERY | 1 | 1.2A | 1.6V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 440V | 1.4V @ 1.2A | -65°C~150°C | 440V | 2A | 440V | 20A | 0.5μA | 30 ns | 10pF @ 10V 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N6074 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/503 | no | Active | 1 (Unlimited) | 2 | 155°C | -65°C | Non-RoHS Compliant | Lead, Tin | Yes | 2 | A, Axial | not_compliant | Through Hole | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | NOT SPECIFIED | NOT SPECIFIED | 2 | Qualified | MIL-19500/503B | SILICON | 1 | Standard | 3A | ULTRA FAST RECOVERY POWER | 1 | 3A | 2.04V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 1μA @ 100V | 2.04V @ 9.4A | -65°C~155°C | 100V | 850mA | 100V | 35A | 30 ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N6640 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Bulk | 1999 | Military, MIL-PRF-19500/609 | no | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | Lead, Tin | 2 | METALLURGICALLY BONDED | D, Axial | Through Hole | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | WIRE | NOT SPECIFIED | NOT SPECIFIED | 1N6640 | 2 | Qualified | MIL-19500/609D | SILICON | 1 | Standard | 0.3A | DO-35 | 300mA | 1V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 100nA @ 50V | 1V @ 200mA | -65°C~175°C | 50V | 300mA | 50V | 2.5A | 0.1μA | 4 ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5802US | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | IN PRODUCTION (Last Updated: 4 weeks ago) | Surface Mount | Bulk | 1997 | Military, MIL-PRF-19500/477 | Active | 1 (Unlimited) | 2 | 175°C | -65°C | Non-RoHS Compliant | No | 2 | SQ-MELF, A | Surface Mount | AVALANCHE | 8541.10.00.80 | END | WRAP AROUND | Qualified | MIL-19500/477F | SILICON | 1 | Standard | ULTRA FAST RECOVERY POWER | 1 | 975mV | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 1μA @ 50V | 875mV @ 1A | -65°C~175°C | 50V | 1A | 1μA | 50V | 35A | 25 ns | 25pF @ 10V 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N3293R | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Bulk | 1997 | no | Active | 1 | Non-RoHS Compliant | 8541.10.00.80 | e0 | TIN LEAD | UPPER | HIGH CURRENT CABLE | NOT SPECIFIED | NOT SPECIFIED | 1 | NO | O-MUPM-H1 | 200°C | -65°C | Rectifier Diodes | Not Qualified | SILICON | 1 | SINGLE | RECTIFIER DIODE | 100A | POWER | 1 | 600V | DO-205AA | 1600A | ANODE | 1.2V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UES806 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Stud | 1997 | no | Active | Not Applicable | 1 | 150°C | -55°C | Non-RoHS Compliant | No | 2 | 8541.10.00.80 | e0 | TIN LEAD | UPPER | SOLDER LUG | 2 | O-MUPM-D1 | Rectifier Diodes | SILICON | 1 | RECTIFIER DIODE | EFFICIENCY | 1 | 50A | 1.25V | CATHODE | Single | 70μA | 400V | 600A | 50 ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N5809US | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Surface Mount | Bulk | 1997 | Military, MIL-PRF-19500/477 | no | Active | 1 (Unlimited) | 2 | 175°C | -65°C | Non-RoHS Compliant | Contains Lead | 2 | HIGH RELIABILITY, METALLURGICALLY BONDED | SQ-MELF, B | Surface Mount | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | NOT SPECIFIED | NOT SPECIFIED | 2 | Qualified | MIL-19500 | SILICON | 1 | Standard | 3A | ULTRA FAST RECOVERY | 1 | 875mV | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 100V | 875mV @ 4A | -65°C~175°C | 100V | 3A | 125A | 30 ns | 5W | 60pF @ 10V 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UES803 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Stud | Bulk | 1996 | no | Active | Not Applicable | 1 | 175°C | -55°C | Non-RoHS Compliant | No | 2 | 8541.10.00.80 | e0 | TIN LEAD | UPPER | SOLDER LUG | O-MUPM-D1 | Rectifier Diodes | SILICON | 1 | RECTIFIER DIODE | EFFICIENCY | 1 | DO-5 | 70A | 975mV | CATHODE | Single | 25μA | 150V | 800A | 50 ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UFT3150C | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | no | Active | 2 | EAR99 | Non-RoHS Compliant | HIGH RELIABILITY | 8541.10.00.80 | e0 | TIN LEAD | BOTTOM | PIN/PEG | NOT SPECIFIED | NOT SPECIFIED | 2 | NO | O-MBFM-P2 | 175°C | -65°C | Not Qualified | SILICON | 2 | COMMON CATHODE, 2 ELEMENTS | RECTIFIER DIODE | 30A | ULTRA FAST SOFT RECOVERY | 1 | 400V | TO-204AA | 350A | CATHODE | 50μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N3903 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 17 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Stud | Bulk | 1997 | no | Active | 1 (Unlimited) | 1 | 150°C | -65°C | Non-RoHS Compliant | No | 2 | DO-203AB, DO-5, Stud | Stud Mount | 8541.10.00.80 | e0 | TIN LEAD | UPPER | SOLDER LUG | 1 | O-MUPM-D1 | Rectifier Diodes | SILICON | 1 | Standard | 1 | 20A | 1.4V | CATHODE | Single | Fast Recovery =< 500ns, > 200mA (Io) | 50μA @ 400V | 1.4V @ 63A | -65°C~150°C | 50μA | 400V | 225A | 200 ns | 150pF @ 10V 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5195 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/118 | no | Active | 1 (Unlimited) | EAR99 | 175°C | -65°C | Non-RoHS Compliant | No | 2 | DO-204AH, DO-35, Axial | Through Hole | e0 | Tin/Lead (Sn/Pb) | Qualified | Standard | 200mA | 1V | Single | Small Signal =< 200mA (Io), Any Speed | 1μA @ 200V | 1V @ 100mA | -65°C~175°C | 180V | 2A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N6627US | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | IN PRODUCTION (Last Updated: 1 month ago) | Surface Mount | Bulk | 1997 | Military, MIL-PRF-19500/590 | no | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -65°C | Non-RoHS Compliant | Lead, Tin | 2 | METALLURGICALLY BONDED | SQ-MELF, E | Surface Mount | AVALANCHE | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | NOT SPECIFIED | NOT SPECIFIED | 2 | Qualified | MIL-19500/590F | SILICON | 1 | Standard | 4A | ULTRA FAST RECOVERY POWER | 1 | 1.75A | 1.5V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 2μA @ 440V | 1.35V @ 2A | -65°C~150°C | 440V | 1.75A | 440V | 75A | 30 ns | 40pF @ 10V 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N6536 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 7 Weeks | Through Hole | Bulk | 1997 | no | Active | 1 (Unlimited) | 2 | EAR99 | Non-RoHS Compliant | Lead, Tin | A, Axial | Through Hole | 8541.10.00.80 | e0 | TIN LEAD | WIRE | NOT SPECIFIED | NOT SPECIFIED | O-LALF-W2 | Not Qualified | SILICON | Standard | 1A | 1A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | 10μA @ 400V | 1.5V @ 1A | 400V | 1A | 400V | 1A DC | 30 ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT100GT120JU2 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | Chassis Mount, Screw | 2006 | yes | Active | 1 (Unlimited) | 4 | EAR99 | 38.2mm | RoHS Compliant | Lead Free | 4 | AVALANCHE RATED, LOW CONDUCTION LOSS | ISOTOP | 9.6mm | 25.4mm | Chassis Mount | 30.000004g | -55°C~150°C TJ | UPPER | UNSPECIFIED | 4 | Insulated Gate BIP Transistors | 480W | 480W | 1 | Single | ISOLATED | N-CHANNEL | Standard | 140A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 7.2nF | 5mA | 1.7V | 335 ns | 2.1V @ 15V, 100A | 610 ns | Trench Field Stop | No | 20V | 7.2nF @ 25V | 2.1 V | 1200V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT75GP120J | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 23 Weeks | Chassis Mount, Screw | 1999 | POWER MOS 7® | yes | Active | 1 (Unlimited) | 4 | EAR99 | 38.2mm | RoHS Compliant | Lead Free | 128A | 4 | ULTRA FAST, LOW CONDUCTION LOSS | ISOTOP | 9.6mm | 25.4mm | Chassis Mount | 30.000004g | -55°C~150°C TJ | 1.2kV | UPPER | UNSPECIFIED | 4 | 543W | 1 | Single | ISOLATED | N-CHANNEL | 20 ns | Standard | 128A | 1.2kV | 1.2kV | POWER CONTROL | 163 ns | SILICON | 7.04nF | 1mA | 3.3V | 60 ns | 3.9V @ 15V, 75A | 359 ns | PT | No | 7.04nF @ 25V | 1200V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGL475U120D4G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | Chassis Mount, Screw | 2011 | Active | 1 (Unlimited) | 4 | EAR99 | RoHS Compliant | Lead Free | 4 | D4 | Chassis Mount | -40°C~175°C TJ | UPPER | UNSPECIFIED | 5 | Insulated Gate BIP Transistors | 2.082kW | 2082W | 1 | Single | ISOLATED | N-CHANNEL | 160 ns | Standard | 610A | 1.2kV | 1.2kV | POWER CONTROL | 340 ns | SILICON | 24.6nF | 4mA | 210 ns | 2.2V @ 15V, 400A | 620 ns | Trench Field Stop | No | 20V | 24.6nF @ 25V | 2.2 V | 1200V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT300DU60G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | Chassis Mount, Screw | 2006 | yes | Active | 1 (Unlimited) | 7 | EAR99 | RoHS Compliant | 7 | AVALANCHE RATED | SP6 | Chassis Mount | -40°C~175°C TJ | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 7 | 1.15kW | 1150W | 2 | Dual, Common Source | ISOLATED | N-CHANNEL | Dual | Standard | 430A | 600V | 600V | POWER CONTROL | SILICON | 24nF | 350μA | 170 ns | 1.8V @ 15V, 300A | 320 ns | Trench Field Stop | No | 24nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT75GN120JDQ3 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 29 Weeks | Chassis Mount, Screw | 1999 | yes | Active | 1 (Unlimited) | 4 | EAR99 | 38.2mm | RoHS Compliant | 4 | HIGH RELIABILITY | ISOTOP | 9.6mm | 25.4mm | Chassis Mount | 30.000004g | -55°C~150°C TJ | UPPER | UNSPECIFIED | 4 | Insulated Gate BIP Transistors | 379W | 1 | Single | ISOLATED | N-CHANNEL | Standard | 124A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 4.8nF | 200μA | 1.7V | 101 ns | 2.1V @ 15V, 75A | 925 ns | Trench Field Stop | No | 30V | 4.8nF @ 25V | 1200V | 124A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT150GN60JDQ4 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 25 Weeks | Chassis Mount, Screw | 1999 | yes | Active | 1 (Unlimited) | 4 | EAR99 | 38.2mm | RoHS Compliant | Lead Free | 220A | 4 | HIGH RELIABILITY, UL RECOGNIZED | ISOTOP | 9.6mm | 25.4mm | Chassis Mount | 30.000004g | -55°C~175°C TJ | 600V | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | UPPER | UNSPECIFIED | 4 | Insulated Gate BIP Transistors | 536W | 1 | Single | ISOLATED | N-CHANNEL | 44 ns | Standard | 220A | 600V | 600V | POWER CONTROL | 430 ns | SILICON | 9.2nF | 50μA | 1.5V | 154 ns | 1.85V @ 15V, 150A | 575 ns | Trench Field Stop | No | 30V | 9.2nF @ 25V | 6.5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT85GR120JD60 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Chassis Mount, Screw | 2001 | Active | 1 (Unlimited) | EAR99 | RoHS Compliant | Lead Free | 4 | SOT-227-4, miniBLOC | Chassis Mount | -55°C~150°C TJ | 543W | 543W | Single | Standard | 116A | 1.2kV | 1.2kV | 8.4nF | 1.1mA | 3.2V @ 15V, 85A | NPT | No | 8.4nF @ 25V | 1200V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT100GF60JU3 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | 2006 | yes | Obsolete | 1 (Unlimited) | 4 | EAR99 | 150°C | -55°C | 38.2mm | RoHS Compliant | 4 | AVALANCHE RATED | ISOTOP | 9.6mm | 25.4mm | Chassis Mount | 30.000004g | UPPER | UNSPECIFIED | 4 | Insulated Gate BIP Transistors | 416W | 1 | Single | ISOLATED | N-CHANNEL | Standard | 120A | 600V | 600V | POWER CONTROL | 4.3nF | 100μA | 2.1V | 51 ns | 2.5V @ 15V, 100A | 210 ns | NPT | No | 20V | 4.3nF @ 25V | 5V |