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Infineon Technologies(12661)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Lead Pitch | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Reference Standard | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | FET Feature | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRFS59N10DPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 52 Weeks | Tube | 2000 | HEXFET® | Discontinued | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | 3.8W Ta 200W Tc | N-Channel | 25m Ω @ 35.4A, 10V | 5.5V @ 250μA | 2450pF @ 25V | 114nC @ 10V | 59A Tc | 100V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFS8408-7TRL | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Tape & Reel (TR) | 2013 | HEXFET® | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | IRFS8408 | YES | FET General Purpose Power | Single | 294W Tc | N-Channel | 1m Ω @ 100A, 10V | 3.9V @ 250μA | 10250pF @ 25V | 315nC @ 10V | 240A | 240A Tc | 40V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP023N08N5AKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2013 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Contains Lead | TO-220-3 | Through Hole | 6.000006g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | NOT SPECIFIED | NOT SPECIFIED | R-PSFM-T3 | 1 | 1 | TO-220AB | DRAIN | Halogen Free | Single | 28 ns | 80V | 300W Tc | 120A | SWITCHING | 0.0023Ohm | 62 ns | SILICON | N-Channel | 2.3m Ω @ 100A, 10V | 3.8V @ 208μA | 12100pF @ 40V | 166nC @ 10V | 16ns | 20 ns | 20V | 120A Tc | 480A | 674 mJ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IPP024N06N3GXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2008 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10mm | ROHS3 Compliant | Lead Free | 3 | TO-220-3 | 15.65mm | 4.4mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | TO-220AB | Halogen Free | Single | 41 ns | 60V | 250W Tc | 120A | SWITCHING | 0.0024Ohm | 79 ns | SILICON | N-Channel | 2.4m Ω @ 100A, 10V | 4V @ 196μA | 23000pF @ 30V | 275nC @ 10V | 20V | 60V | 120A Tc | 480A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| AUIRF1324STRL | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | No | 3 | ULTRA-LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.572mm | 9.65mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | Single | 300W | 17 ns | 300W Tc | 195A | SWITCHING | 0.00165Ohm | 83 ns | SILICON | N-Channel | 1.65m Ω @ 195A, 10V | 4V @ 250μA | 7590pF @ 24V | 240nC @ 10V | 190ns | 120 ns | 20V | 24V | 195A Tc | 1420A | 270 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRFSL4127PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2008 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | No | 3 | TO-262-3 Long Leads, I2Pak, TO-262AA | 9.652mm | 4.826mm | 22MOhm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | 30 | 1 | DRAIN | Single | 375W | 17 ns | 375W Tc | 72A | SWITCHING | 56 ns | SILICON | N-Channel | 22m Ω @ 44A, 10V | 5V @ 250μA | 5380pF @ 50V | 150nC @ 10V | 18ns | 22 ns | 20V | 200V | 72A Tc | 250 mJ | |||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF2804STRL7P | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Tape & Reel (TR) | 2010 | HEXFET® | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW-ON RESISTANCE | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G6 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 330W Tc | SWITCHING | 0.0016Ohm | 40V | SILICON | N-Channel | 1.6m Ω @ 160A, 10V | 4V @ 250μA | 6930pF @ 25V | 260nC @ 10V | 240A | 240A Tc | 40V | 1360A | 1050 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF2804STRL | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.826mm | 9.65mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 300W | 13 ns | 2V | 300W Tc | 195A | SWITCHING | 130 ns | SILICON | N-Channel | 2m Ω @ 75A, 10V | 4V @ 250μA | 6450pF @ 25V | 240nC @ 10V | 120ns | 130 ns | 20V | 40V | 270A | 195A Tc | 540 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRFSL7434PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2004 | HEXFET®, StrongIRFET™ | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 3 | TO-262-3 Long Leads, I2Pak, TO-262AA | No SVHC | Through Hole | 2.084002g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | 1 | DRAIN | Single | 24 ns | 3V | 294W Tc | 195A | SWITCHING | 115 ns | SILICON | N-Channel | 1.6m Ω @ 100A, 10V | 3.9V @ 250μA | 10820pF @ 25V | 324nC @ 10V | 68ns | 68 ns | 20V | 40V | 195A Tc | 780A | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPA126N10N3GXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 2008 | OptiMOS™ | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-220-3 Full Pack | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | 33W Tc | SWITCHING | 0.0126Ohm | 100V | SILICON | N-Channel | 12.6m Ω @ 35A, 10V | 3.5V @ 45μA | 2500pF @ 50V | 35nC @ 10V | 35A | 35A Tc | 100V | 140A | 90 mJ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL3803VSPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
12 Weeks | Surface Mount | Tube | 2005 | HEXFET® | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.699mm | 9.65mm | 5.5MOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 200W | 16 ns | 3.8W Ta 200W Tc | 140A | SWITCHING | 29 ns | SILICON | N-Channel | 5.5m Ω @ 71A, 10V | 1V @ 250μA | 3720pF @ 25V | 76nC @ 4.5V | 16V | 30V | 75A | 140A Tc | 470A | 400 mJ | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||
| IPD90N06S4L03ATMA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | Automotive, AEC-Q101, OptiMOS™ | yes | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | 3.949996g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | R-PSSO-G2 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 21 ns | 60V | 150W Tc | 90A | 140 ns | SILICON | N-Channel | 3.5m Ω @ 90A, 10V | 2.2V @ 90μA | 13000pF @ 25V | 170nC @ 10V | 6ns | 20 ns | 16V | 90A Tc | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPP80N04S4L04AKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Through Hole | Tube | 2010 | OptiMOS™ | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | Halogen Free | 7 ns | 40V | 71W Tc | 80A | 22 ns | SILICON | N-Channel | 4.3m Ω @ 80A, 10V | 2.2V @ 35μA | 4690pF @ 25V | 60nC @ 10V | 12ns | 31 ns | 20V | 80A Tc | 100 mJ | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFR2407TRL | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 110W | 16 ns | 110W Tc | 42A | SWITCHING | 0.026Ohm | 65 ns | SILICON | N-Channel | 26m Ω @ 25A, 10V | 4V @ 250μA | 2400pF @ 25V | 110nC @ 10V | 90ns | 66 ns | 20V | 75V | 42A Tc | 170A | |||||||||||||||||||||||||||||||||||||||||||||
| IRFSL7540PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2013 | HEXFET®, StrongIRFET™ | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 3 | TO-262-3 Long Leads, I2Pak, TO-262AA | No SVHC | Through Hole | 2.084002g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | NOT SPECIFIED | NOT SPECIFIED | 1 | 1 | DRAIN | Single | 12 ns | 3.7V | 160W Tc | 110A | SWITCHING | 58 ns | SILICON | N-Channel | 5.1m Ω @ 65A, 10V | 3.7V @ 100μA | 4555pF @ 25V | 130nC @ 10V | 76ns | 56 ns | 20V | 60V | 110A Tc | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD100N06S403ATMA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | Automotive, AEC-Q101, OptiMOS™ | yes | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | 2.5mm | Surface Mount | 3.949996g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 150W | 30 ns | 60V | 150W Tc | 100A | 175°C | 40 ns | SILICON | N-Channel | 3.5m Ω @ 100A, 10V | 4V @ 90μA | 10400pF @ 25V | 128nC @ 10V | 20V | 60V | 100A Tc | 400A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| BSC159N10LSFGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Not For New Designs | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | LOGIC LEVEL COMPATIBLE | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | YES | R-PDSO-F5 | FET General Purpose Powers | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 114W Tc | SWITCHING | 0.0159Ohm | 100V | SILICON | N-Channel | 15.9m Ω @ 50A, 10V | 2.4V @ 72μA | 2500pF @ 50V | 35nC @ 10V | 9.4A | 9.4A Ta 63A Tc | 100V | 252A | 155 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IPA060N06NXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2012 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 Full Pack | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | Halogen Free | 12 ns | 60V | 33W Tc | 45A | SWITCHING | 0.006Ohm | 20 ns | SILICON | N-Channel | 6m Ω @ 45A, 10V | 3.3V @ 36μA | 2500pF @ 30V | 32nC @ 10V | 7 ns | 20V | 45A Tc | 180A | 60 mJ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| BSB280N15NZ3GXUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | OptiMOS™ | yes | Active | 3 (168 Hours) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | 3-WDSON | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e4 | Silver/Nickel (Ag/Ni) | BOTTOM | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 3 | FET General Purpose Powers | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 9 ns | 150V | 2.8W Ta 57W Tc | 30A | SWITCHING | 0.028Ohm | 16 ns | SILICON | N-Channel | 28m Ω @ 30A, 10V | 4V @ 60μA | 1600pF @ 75V | 21nC @ 10V | 6ns | 3 ns | 20V | 9A | 9A Ta 30A Tc | 120A | 120 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRFL4310PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Tape & Reel (TR) | 1999 | Obsolete | 1 (Unlimited) | 4 | EAR99 | RoHS Compliant | HIGH RELIABILITY | TO-261-4, TO-261AA | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | YES | R-PDSO-G4 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 1W Ta | SWITCHING | 0.2Ohm | 100V | SILICON | N-Channel | 330pF @ 100kHz | 25nC @ 100kHz | 1.6A | 100V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6611TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2006 | HEXFET® | Obsolete | 1 (Unlimited) | 3 | EAR99 | 6.35mm | RoHS Compliant | Lead Free | 32A | No | 5 | DirectFET™ Isometric MX | 506μm | 5.05mm | Surface Mount | -40°C~150°C TJ | 30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | BOTTOM | 260 | 40 | R-XBCC-N3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 89W | 18 ns | 3.9W Ta 89W Tc | 22A | SWITCHING | 0.0026Ohm | 24 ns | SILICON | N-Channel | 2.6m Ω @ 27A, 10V | 2.25V @ 250μA | 4860pF @ 15V | 56nC @ 4.5V | 57ns | 6.5 ns | 20V | 30V | 32A Ta 150A Tc | 220A | 310 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRF6613TR1PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2006 | HEXFET® | Obsolete | 1 (Unlimited) | SMD/SMT | 150°C | -40°C | 6.35mm | RoHS Compliant | Lead Free | 23A | No | 5 | DirectFET™ Isometric MT | No SVHC | 506μm | 5.05mm | 3.4MOhm | Surface Mount | -40°C~150°C TJ | 40V | MOSFET (Metal Oxide) | 1 | 89W | 18 ns | 1.35V | 4.1mOhm | DIRECTFET™ MT | 2.8W Ta 89W Tc | 57 ns | 18A | 27 ns | N-Channel | 3.4mOhm @ 23A, 10V | 2.25V @ 250μA | 5950pF @ 15V | 63nC @ 4.5V | 47ns | 4.9 ns | 20V | 40V | 40V | 1.35 V | 23A Ta 150A Tc | 40V | 5.95nF | 4.5V 10V | ±20V | 3.4 mΩ | |||||||||||||||||||||||||||||||||||||||||||
| IRF6631TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2006 | HEXFET® | Obsolete | 1 (Unlimited) | 3 | EAR99 | 4.826mm | RoHS Compliant | Lead Free | 13A | No | 5 | LOW CONDUCTION LOSS | DirectFET™ Isometric SQ | No SVHC | 506μm | 3.95mm | Surface Mount | -40°C~150°C TJ | 30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | BOTTOM | R-XBCC-N3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 42W | 15 ns | 1.8V | 2.2W Ta 42W Tc | 10A | SWITCHING | 0.0078Ohm | 18 ns | SILICON | N-Channel | 7.8m Ω @ 13A, 10V | 2.35V @ 25μA | 1450pF @ 15V | 18nC @ 4.5V | 18ns | 4.9 ns | 20V | 30V | 1.8 V | 13A Ta 57A Tc | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRF6629TR1PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2006 | HEXFET® | Obsolete | 1 (Unlimited) | SMD/SMT | 150°C | -40°C | RoHS Compliant | Lead Free | 29A | No | 5 | DirectFET™ Isometric MX | No SVHC | 506μm | 5.05mm | 2.1MOhm | Surface Mount | -40°C~150°C TJ | 25V | MOSFET (Metal Oxide) | 100W | 20 ns | 1.8V | 2.7mOhm | DIRECTFET™ MX | 2.8W Ta 100W Tc | 23A | 20 ns | N-Channel | 2.1mOhm @ 29A, 10V | 2.35V @ 100μA | 4260pF @ 13V | 51nC @ 4.5V | 67ns | 7.4 ns | 20V | 25V | 25V | 1.8 V | 29A Ta 180A Tc | 25V | 4.26nF | 4.5V 10V | ±20V | 2.1 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||
| IRF6655TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | HEXFET® | Obsolete | 1 (Unlimited) | 2 | EAR99 | 4.826mm | ROHS3 Compliant | Lead Free | 4.2A | No | 5 | DirectFET™ Isometric SH | 508μm | 3.9624mm | Surface Mount | -40°C~150°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | R-XBCC-N2 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 42W | 7.4 ns | 2.2W Ta 42W Tc | 4.2mA | SWITCHING | 0.062Ohm | 14 ns | SILICON | N-Channel | 62m Ω @ 5A, 10V | 4.8V @ 25μA | 530pF @ 25V | 11.7nC @ 10V | 2.8ns | 4.3 ns | 20V | 100V | 4.2A Ta 19A Tc | 34A | 11 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRF6645TR1PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2005 | HEXFET® | Obsolete | 1 (Unlimited) | SMD/SMT | 150°C | -40°C | 4.826mm | RoHS Compliant | Lead Free | Copper, Silver, Tin | 5.7A | No | 5 | DirectFET™ Isometric SJ | No SVHC | 530μm | 3.95mm | 35MOhm | Surface Mount | -40°C~150°C TJ | 100V | MOSFET (Metal Oxide) | 1 | Single | 42W | 9.2 ns | 3V | 28mOhm | DIRECTFET™ SJ | 2.2W Ta 42W Tc | 47 ns | 4.5A | 18 ns | N-Channel | 35mOhm @ 5.7A, 10V | 4.9V @ 50μA | 890pF @ 25V | 20nC @ 10V | 5ns | 5.1 ns | 20V | 100V | 100V | 3 V | 5.7A Ta 25A Tc | 100V | 890pF | 10V | ±20V | 35 mΩ | |||||||||||||||||||||||||||||||||||||||||
| IRF6646TR1PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2005 | HEXFET® | Obsolete | 1 (Unlimited) | SMD/SMT | 150°C | -40°C | 6.35mm | RoHS Compliant | Lead Free | 12A | No | 5 | DirectFET™ Isometric MN | No SVHC | 506μm | 5.05mm | 9.5MOhm | Surface Mount | -40°C~150°C TJ | 80V | MOSFET (Metal Oxide) | 1 | Single | 89W | 17 ns | 3V | 7.6mOhm | DIRECTFET™ MN | 2.8W Ta 89W Tc | 54 ns | 9.6A | 31 ns | N-Channel | 9.5mOhm @ 12A, 10V | 4.9V @ 150μA | 2060pF @ 25V | 50nC @ 10V | 20ns | 12 ns | 20V | 80V | 80V | 3 V | 12A Ta 68A Tc | 80V | 2.06nF | 10V | ±20V | 9.5 mΩ | ||||||||||||||||||||||||||||||||||||||||||
| BTS244Z E3062A | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 1999 | TEMPFET® | Obsolete | 1 (Unlimited) | 4 | RoHS Compliant | AVALANCHE RATED | TO-263-5, D2Pak (4 Leads + Tab), TO-263BB | compliant | Surface Mount | -40°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G4 | AEC-Q101 | 1 | SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR | DRAIN | 170W Tc | SWITCHING | 0.018Ohm | 55V | SILICON | N-Channel | 13m Ω @ 19A, 10V | 2V @ 130μA | 2660pF @ 25V | 130nC @ 10V | Temperature Sensing Diode | 35A | 35A Tc | 55V | 188A | 1650 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUZ73A | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2000 | SIPMOS® | Obsolete | 1 (Unlimited) | 3 | Through Hole | EAR99 | RoHS Compliant | Lead Free | 5.5A | 3 | TO-220-3 | No SVHC | 2.54mm | Through Hole | -55°C~150°C TJ | 200V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Not Qualified | 1 | TO-220AB | Single | 40W | 40W Tc | 5.5A | SWITCHING | 0.6Ohm | 55 ns | SILICON | N-Channel | 600m Ω @ 4.5A, 10V | 4V @ 1mA | 530pF @ 25V | 40ns | 30 ns | 20V | 200V | 200V | 3 V | 5.8A | 5.5A Tc | 22A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRFP4232PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Bulk | 2007 | HEXFET® | Obsolete | 1 (Unlimited) | Through Hole | 175°C | -40°C | 15.87mm | RoHS Compliant | Lead Free | 60A | No | 3 | TO-247-3 | No SVHC | 20.7mm | 5.3086mm | 35.7MOhm | Through Hole | -40°C~175°C TJ | 250V | MOSFET (Metal Oxide) | 1 | Single | 430W | 37 ns | 5V | 35.7mOhm | TO-247AC | 430W Tc | 60A | 64 ns | N-Channel | 35.7mOhm @ 42A, 10V | 5V @ 250μA | 7290pF @ 25V | 240nC @ 10V | 30V | 250V | 250V | 5 V | 60A Tc | 250V | 7.29nF | 10V | ±20V | 35.7 mΩ |