Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Isolation Voltage | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | FET Feature | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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IRF4104SPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 15 Weeks | Surface Mount | Tube | 2004 | HEXFET® | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | 75A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 9.65mm | 5.5MOhm | Surface Mount | -55°C~175°C TJ | 75V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 140W | 16 ns | 4V | 140W Tc | 35 ns | 75A | SWITCHING | 38 ns | SILICON | N-Channel | 5.5m Ω @ 75A, 10V | 4V @ 250μA | 3000pF @ 25V | 100nC @ 10V | 130ns | 77 ns | 20V | 40V | 75A Tc | 470A | 220 mJ | 10V | ±20V | ||||||||||||||||||||||||||||
AUIRFR540Z | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tube | 2013 | HEXFET® | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | FET General Purpose Power | 1 | Single | 91W | 14 ns | 4V | 91W Tc | 35A | 43 ns | N-Channel | 28.5m Ω @ 21A, 10V | 4V @ 50μA | 1690pF @ 25V | 59nC @ 10V | 42ns | 34 ns | 20V | 100V | 35A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
IPI086N10N3GXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2008 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | No | TO-262-3 Long Leads, I2Pak, TO-262AA | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | 3 | R-PSIP-T3 | 1 | SINGLE WITH BUILT-IN DIODE | Halogen Free | 125W | 18 ns | 100V | 125W Tc | 80A | SWITCHING | 0.0086Ohm | 31 ns | SILICON | N-Channel | 8.6m Ω @ 73A, 10V | 3.5V @ 75μA | 3980pF @ 50V | 55nC @ 10V | 42ns | 8 ns | 20V | 80A Tc | 320A | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
IRL2910STRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | 55A | No | 3 | LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY, AVALANCHE RATED | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.826mm | 9.65mm | 26mOhm | Surface Mount | -55°C~175°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | DRAIN | Single | 200W | 11 ns | 2V | 3.8W Ta 200W Tc | 350 ns | 55A | SWITCHING | 49 ns | SILICON | N-Channel | 26m Ω @ 29A, 10V | 2V @ 250μA | 3700pF @ 25V | 140nC @ 5V | 100ns | 55 ns | 16V | 100V | 100V | 2 V | 55A Tc | 520 mJ | 4V 10V | ±16V | |||||||||||||||||||||||||||
IPB020N08N5ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | 3.949996g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | 1 | DRAIN | Halogen Free | Single | 28 ns | 80V | 300W Tc | 120A | SWITCHING | 0.002Ohm | 62 ns | SILICON | N-Channel | 2m Ω @ 100A, 10V | 3.8V @ 208μA | 12100pF @ 40V | 166nC @ 10V | 16ns | 20 ns | 20V | 120A Tc | 480A | 674 mJ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
IRF135B203 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tube | 2013 | StrongIRFET™ | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 441W Tc | 129A | N-Channel | 8.4m Ω @ 77A, 10V | 4V @ 250μA | 9700pF @ 50V | 270nC @ 10V | 129A Tc | 135V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF300P227 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Tube | 2017 | StrongIRFET™ | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-247-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 313W Tc | N-Channel | 40m Ω @ 30A, 10V | 4V @ 270μA | 4893pF @ 50V | 107nC @ 10V | 50A Tc | 300V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPSA70R1K4CEAKMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tube | 2013 | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-251-3 Short Leads, IPak, TO-251AA | not_compliant | Through Hole | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSIP-T3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 53W Tc | SWITCHING | 700V | SILICON | N-Channel | 1.4 Ω @ 1A, 10V | 3.5V @ 100μA | 225pF @ 100V | 10.5nC @ 10V | 5.4A Tc | 700V | 8.3A | 26 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
IPDD60R102G7XTMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | CoolMOS™ G7 | Active | 1 (Unlimited) | ROHS3 Compliant | 10-PowerSOP Module | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 139W Tc | N-Channel | 102m Ω @ 7.8A, 10V | 4V @ 390μA | 1320pF @ 400V | 34nC @ 10V | 23A Tc | 600V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB034N03LGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | no | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 94W | 9.2 ns | 30V | 94W Tc | 80A | SWITCHING | 0.0047Ohm | 35 ns | SILICON | N-Channel | 3.4m Ω @ 30A, 10V | 2.2V @ 250μA | 5300pF @ 15V | 51nC @ 10V | 6.4ns | 5.4 ns | 20V | 80A Tc | 400A | 70 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
IPA60R400CEXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2008 | CoolMOS™ CE | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 Full Pack | Through Hole | 6.000006g | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | Halogen Free | 11 ns | 600V | 31W Tc | 10.3A | SWITCHING | 0.4Ohm | 56 ns | SILICON | N-Channel | 400m Ω @ 3.8A, 10V | 3.5V @ 300μA | 700pF @ 100V | 32nC @ 10V | 9ns | 8 ns | 20V | 600V | 10.3A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
IPI045N10N3GXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2008 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | TO-262-3 Long Leads, I2Pak, TO-262AA | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSIP-T3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | Halogen Free | 214W | 27 ns | 100V | 214W Tc | 100A | SWITCHING | 0.0045Ohm | 48 ns | SILICON | N-Channel | 4.5m Ω @ 100A, 10V | 3.5V @ 150μA | 8410pF @ 50V | 117nC @ 10V | 59ns | 14 ns | 20V | 100A Tc | 400A | 340 mJ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
BSD314SPEH6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | no | Active | 1 (Unlimited) | EAR99 | 2mm | ROHS3 Compliant | Lead Free | Tin | 6 | 6-VSSOP, SC-88, SOT-363 | 800μm | 1.25mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | e3 | NOT SPECIFIED | NOT SPECIFIED | Halogen Free | Single | 5.1 ns | -30V | 500mW Ta | 1.5A | 12.4 ns | P-Channel | 140m Ω @ 1.5A, 10V | 2V @ 6.3μA | 294pF @ 15V | 2.9nC @ 10V | 3.9ns | 20V | 1.5A Ta | 30V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
SPD04P10PGBTMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2007 | SIPMOS® | no | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | AVALANCHE RATED | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | Not Halogen Free | 38W | 5.7 ns | -100V | 38W Tc | 4A | 14 ns | SILICON | P-Channel | 1 Ω @ 2.8A, 10V | 4V @ 380μA | 319pF @ 25V | 12nC @ 10V | 8.6ns | 4.5 ns | 20V | 4A | 4A Tc | 100V | 57 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||
IPD14N06S280ATMA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | OptiMOS™ | yes | Active | 1 (Unlimited) | 2 | EAR99 | 6.5mm | ROHS3 Compliant | Contains Lead | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | not_compliant | 2.5mm | 6.22mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | 1 | DRAIN | Halogen Free | Single | 47W | 6 ns | 2.1V | 55V | 47W Tc | 17A | 175°C | 0.08Ohm | 15 ns | SILICON | N-Channel | 80m Ω @ 7A, 10V | 4V @ 14μA | 293pF @ 25V | 10nC @ 10V | 17ns | 20 ns | 20V | 55V | 17A Tc | 68A | 10V | ±20V | ||||||||||||||||||||||||||||||||
AUIRLR120NTRL | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Tape & Reel (TR) | 2015 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 48W Tc | SWITCHING | 0.225Ohm | 100V | SILICON | N-Channel | 185m Ω @ 6A, 10V | 2V @ 250μA | 440pF @ 25V | 20nC @ 5V | 10A | 10A Tc | 100V | 35A | 85 mJ | 4V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||
IRFR2407TRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | 2000 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | AVALANCHE RATED, HIGH RELIABILITY | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 110W Tc | SWITCHING | 0.026Ohm | 75V | SILICON | N-Channel | 26m Ω @ 25A, 10V | 4V @ 250μA | 2400pF @ 25V | 110nC @ 10V | 30A | 42A Tc | 75V | 170A | 130 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
BSC016N03LSGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2009 | OptiMOS™ | no | Not For New Designs | 1 (Unlimited) | 8 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | 8-PowerTDFN | No SVHC | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 125W | 30V | 2.5W Ta 125W Tc | 100A | SWITCHING | 0.0023Ohm | SILICON | N-Channel | 1.6m Ω @ 30A, 10V | 2.2V @ 250μA | 10000pF @ 15V | 131nC @ 10V | 8.6ns | 20V | 32A | 32A Ta 100A Tc | 400A | 290 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
IRLI3705NPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 1997 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 52A | 3 | AVALANCHE RATED | TO-220-3 Full Pack | No SVHC | 9.8mm | 12mOhm | Through Hole | -55°C~175°C TJ | 57V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | NOT SPECIFIED | NOT SPECIFIED | Not Qualified | 1 | TO-220AB | ISOLATED | Single | 47W | 12 ns | 2V | 58W Tc | 140 ns | 52A | SWITCHING | 2kV | 37 ns | SILICON | N-Channel | 10m Ω @ 28A, 10V | 2V @ 250μA | 3600pF @ 25V | 98nC @ 5V | 140ns | 78 ns | 16V | 55V | 55V | 2 V | 52A Tc | 4V 10V | ±16V | |||||||||||||||||||||||||||||||
IPA80R360P7XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tube | 2014 | CoolMOS™ P7 | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | 30W Tc | SWITCHING | 0.36Ohm | 800V | SILICON | N-Channel | 360m Ω @ 5.6A, 10V | 3.5V @ 280μA | 930pF @ 500V | 30nC @ 10V | 13A Tc | 800V | 34A | 34 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
IPW60R180P7XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tube | 2017 | CoolMOS™ P7 | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-247-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | 72W Tc | SWITCHING | 0.18Ohm | 600V | SILICON | N-Channel | 180m Ω @ 5.6A, 10V | 4V @ 280μA | 1081pF @ 400V | 25nC @ 10V | 18A Tc | 650V | 53A | 56 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
IPP040N06NAKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Tube | 2008 | OptiMOS™ | no | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Contains Lead | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 8541.29.00.95 | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | 1 | TO-220AB | Halogen Free | Single | 107W | 60V | 3W Ta 107W Tc | 80A | SWITCHING | 0.004Ohm | 30 ns | SILICON | N-Channel | 4m Ω @ 80A, 10V | 2.8V @ 50μA | 2700pF @ 30V | 38nC @ 10V | 16ns | 9 ns | 20V | 60V | 20A | 20A Ta 80A Tc | 320A | 70 mJ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
SPW24N60C3FKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 2005 | CoolMOS™ | yes | Not For New Designs | 1 (Unlimited) | 3 | 16.03mm | ROHS3 Compliant | Lead Free | 24.3A | 3 | AVALANCHE RATED | TO-247-3 | No SVHC | 21.1mm | 5.16mm | Through Hole | -55°C~150°C TJ | 650V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | Not Qualified | 1 | Single | 240W | 13 ns | 3V | 240W Tc | 24.3A | SWITCHING | 0.16Ohm | 140 ns | SILICON | N-Channel | 160m Ω @ 15.4A, 10V | 3.9V @ 1.2mA | 3000pF @ 25V | 135nC @ 10V | 21ns | 14 ns | 20V | 650V | 24.3A Tc | 72.9A | 780 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||
BSC084P03NS3EGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | No | 8 | 8-PowerTDFN | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | 8 | R-PDSO-F5 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.5W | 16.4 ns | -30V | 2.5W Ta 69W Tc | 14.9A | SWITCHING | 33.3 ns | SILICON | P-Channel | 8.4m Ω @ 50A, 10V | 3V @ 110μA | 4240pF @ 15V | 57.7nC @ 10V | 133.5ns | 8.1 ns | 25V | 14.9A Ta 78.6A Tc | 30V | 200A | 6V 10V | ±25V | |||||||||||||||||||||||||||||||||||||
IRFR540ZTRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 6.7056mm | ROHS3 Compliant | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.26mm | 6.22mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 91W | 14 ns | 91W Tc | 35A | SWITCHING | 0.0285Ohm | 43 ns | SILICON | N-Channel | 28.5m Ω @ 21A, 10V | 4V @ 50μA | 1690pF @ 25V | 59nC @ 10V | 42ns | 34 ns | 20V | 100V | 35A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||
IPA60R1K0CEXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2013 | CoolMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | TO-220-3 Full Pack | Through Hole | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | Halogen Free | 600V | 26W Tc | 6.8A | SWITCHING | 1Ohm | SILICON | N-Channel | 1 Ω @ 1.5A, 10V | 3.5V @ 130μA | 280pF @ 100V | 13nC @ 10V | Super Junction | 6.8A Tc | 12A | 46 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
IRFR3711TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | HEXFET® | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | 6.7056mm | ROHS3 Compliant | Lead Free | 100A | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.3876mm | 6.22mm | 6.5MOhm | Surface Mount | -55°C~150°C TJ | 20V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 120W | 12 ns | 2.5W Ta 120W Tc | 110A | SWITCHING | 17 ns | SILICON | N-Channel | 6.5m Ω @ 15A, 10V | 3V @ 250μA | 2980pF @ 10V | 44nC @ 4.5V | 220ns | 12 ns | 20V | 20V | 100A Tc | 440A | 460 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
IRFR9N20DTRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | 2000 | HEXFET® | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 86W Tc | SWITCHING | 0.38Ohm | 200V | SILICON | N-Channel | 380m Ω @ 5.6A, 10V | 5.5V @ 250μA | 560pF @ 25V | 27nC @ 10V | 9.4A | 9.4A Tc | 200V | 38A | 100 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
IPD60N10S412ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | Automotive, AEC-Q101, OptiMOS™ | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 6 ns | 100V | 94W Tc | 60A | 0.0122Ohm | 9 ns | SILICON | N-Channel | 12.2m Ω @ 60A, 10V | 3.5V @ 46μA | 2470pF @ 25V | 34nC @ 10V | 3ns | 13 ns | 20V | 60A Tc | 240A | 120 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
BSV236SPH6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2000 | OptiMOS™ | yes | Active | 1 (Unlimited) | 6 | EAR99 | 2mm | ROHS3 Compliant | Contains Lead | Tin | -1.5A | 6 | AVALANCHE RATED | 6-VSSOP, SC-88, SOT-363 | 1.25mm | Surface Mount | -55°C~150°C TJ | -20V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | SINGLE WITH BUILT-IN DIODE | Halogen Free | 560mW | -20V | 560mW Ta | 1.5A | SILICON | P-Channel | 175m Ω @ 1.5A, 4.5V | 1.2V @ 8μA | 228pF @ 15V | 5.7nC @ 4.5V | 8.5ns | 12V | 1.5A Ta | 20V | 2.5V 4.5V | ±12V |
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