Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Lead Pitch | Height | Width | Resistance | Mounting Type | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Manufacturer Package Identifier | Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Reference Standard | Voltage | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Isolation Voltage | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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IRLL024NTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 1999 | HEXFET® | Active | 1 (Unlimited) | 4 | EAR99 | 6.6802mm | ROHS3 Compliant | Contains Lead, Lead Free | Tin | 3.1A | No | 3 | AVALANCHE RATED, ULTRA LOW RESISTANCE | TO-261-4, TO-261AA | No SVHC | 1.8mm | 3.7mm | 65mOhm | Surface Mount | -55°C~150°C TJ | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | IRLL024NTRPBF | DUAL | GULL WING | R-PDSO-G4 | 1 | 1 | DRAIN | Single | 2.1W | 7.4 ns | 2V | 1W Ta | 58 ns | 3.1A | 150°C | SWITCHING | 18 ns | SILICON | N-Channel | 65m Ω @ 3.1A, 10V | 2V @ 250μA | 510pF @ 25V | 15.6nC @ 5V | 21ns | 25 ns | 16V | 55V | 55V | 2 V | 3.1A Ta | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||
IRLR024NTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 6.7056mm | ROHS3 Compliant | Contains Lead, Lead Free | Tin | 17A | No | 3 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.52mm | 6.22mm | 80mOhm | Surface Mount | -55°C~175°C TJ | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 45W | 7.1 ns | 2V | 45W Tc | 90 ns | 17A | 175°C | SWITCHING | 20 ns | SILICON | N-Channel | 65m Ω @ 10A, 10V | 2V @ 250μA | 480pF @ 25V | 15nC @ 5V | 74ns | 29 ns | 16V | 55V | 55V | 2 V | 17A Tc | 72A | 68 mJ | 4V 10V | ±16V | ||||||||||||||||||||||||||
IRF6644TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 6.35mm | ROHS3 Compliant | Lead Free | 10.3A | No | 5 | LOW CONDUCTION LOSS | DirectFET™ Isometric MN | No SVHC | 508μm | 5.0546mm | Surface Mount | -40°C~150°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | R-XBCC-N3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 89W | 17 ns | 4.8V | 2.8W Ta 89W Tc | 8.3A | 34 ns | SILICON | N-Channel | 13m Ω @ 10.3A, 10V | 4.8V @ 150μA | 2210pF @ 25V | 47nC @ 10V | 26ns | 16 ns | 20V | 100V | 4.8 V | 10.3A Ta 60A Tc | 228A | 86 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
IPD068N10N3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | yes | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | Contains Lead | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 100V | 150W Tc | 90A | SWITCHING | 0.0068Ohm | SILICON | N-Channel | 6.8m Ω @ 90A, 10V | 3.5V @ 90μA | 4910pF @ 50V | 68nC @ 10V | 90A Tc | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
IRL540NPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 1998 | HEXFET® | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 10.5156mm | ROHS3 Compliant | Lead Free | 36A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE | TO-220-3 | No SVHC | 2.54mm | 15.24mm | 4.69mm | 53mOhm | Through Hole | -55°C~175°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN OVER NICKEL | 250 | 30 | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 140W | 11 ns | 2V | 140W Tc | 290 ns | 36A | SWITCHING | 39 ns | SILICON | N-Channel | 44m Ω @ 18A, 10V | 2V @ 250μA | 1800pF @ 25V | 74nC @ 5V | 81ns | 62 ns | 16V | 100V | 100V | 2 V | 36A Tc | 4V 10V | ±16V | |||||||||||||||||||||||||||||||
IPB180P04P4L02ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | Not For New Designs | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | Contains Lead | 7 | TO-263-7, D2Pak (6 Leads + Tab) | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G6 | AEC-Q101 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 32 ns | -40V | 150W Tc | 180A | SWITCHING | 0.0039Ohm | 146 ns | SILICON | P-Channel | 2.4m Ω @ 100A, 10V | 2.2V @ 410μA | 18700pF @ 25V | 286nC @ 10V | 28ns | 119 ns | 16V | 180A Tc | 40V | 84 mJ | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||
IPB019N06L3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | no | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | LOGIC LEVEL COMPATIBLE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | not_compliant | 4.57mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | PG-TO-263-3 | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | 1 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 250W | 35 ns | 1.7V | 60V | 250W Tc | 120A | 175°C | SWITCHING | 131 ns | SILICON | N-Channel | 1.9m Ω @ 100A, 10V | 2.2V @ 196μA | 28000pF @ 30V | 166nC @ 4.5V | 79ns | 38 ns | 20V | 60V | 120A Tc | 480A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
IRFS3206TRRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.826mm | 9.65mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 300W | 19 ns | 300W Tc | 120A | SWITCHING | 55 ns | SILICON | N-Channel | 3m Ω @ 75A, 10V | 4V @ 150μA | 6540pF @ 50V | 170nC @ 10V | 82ns | 83 ns | 20V | 60V | 120A Tc | 840A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
IRFP250MPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2009 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 16.129mm | ROHS3 Compliant | Lead Free | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-247-3 | No SVHC | 21.1mm | 5.2mm | 75MOhm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN OVER NICKEL | 250 | 30 | FET General Purpose Power | 1 | TO-247AC | Single | 214W | 14 ns | 4V | 214W Tc | 30A | SWITCHING | 41 ns | SILICON | N-Channel | 75m Ω @ 18A, 10V | 4V @ 250μA | 2159pF @ 25V | 123nC @ 10V | 43ns | 33 ns | 20V | 200V | 30A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
IRFS3207ZTRRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | Not Qualified | 1 | DRAIN | Single | 300W | 300W Tc | 120A | SWITCHING | 0.0041Ohm | SILICON | N-Channel | 4.1m Ω @ 75A, 10V | 4V @ 150μA | 6920pF @ 50V | 170nC @ 10V | 68ns | 68 ns | 75V | 120A Tc | 670A | 170 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
IRFS4310ZTRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.826mm | 9.65mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 250W | 20 ns | 250W Tc | 120A | SWITCHING | 0.006Ohm | 55 ns | SILICON | N-Channel | 6m Ω @ 75A, 10V | 4V @ 150μA | 6860pF @ 50V | 170nC @ 10V | 60ns | 57 ns | 20V | 100V | 4 V | 120A Tc | 560A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
IRF7470TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | 2003 | HEXFET® | Active | 1 (Unlimited) | 8 | EAR99 | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | YES | R-PDSO-G8 | 1 | SINGLE WITH BUILT-IN DIODE | MS-012AA | 2.5W Ta | SWITCHING | 0.013Ohm | 40V | SILICON | N-Channel | 13m Ω @ 10A, 10V | 2V @ 250μA | 3430pF @ 20V | 44nC @ 4.5V | 10A | 10A Ta | 40V | 85A | 300 mJ | 2.8V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||
BSC027N04LSGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | LOGIC LEVEL COMPATIBLE | 8-PowerTDFN | No SVHC | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 83W | 2V | 40V | 2.5W Ta 83W Tc | 100A | SWITCHING | SILICON | N-Channel | 2.7m Ω @ 50A, 10V | 2V @ 49μA | 6800pF @ 20V | 85nC @ 10V | 5.6ns | 20V | 24A | 24A Ta 100A Tc | 400A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
IPD122N10N3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | Halogen Free | 100V | 94W Tc | 59A | SWITCHING | 0.0122Ohm | SILICON | N-Channel | 12.2m Ω @ 46A, 10V | 3.5V @ 46μA | 2500pF @ 50V | 35nC @ 10V | 59A Tc | 70 mJ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
BSC109N10NS3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | No SVHC | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 78W | 12 ns | 2.7V | 100V | 78W Tc | 63A | SWITCHING | 19 ns | SILICON | N-Channel | 10.9m Ω @ 46A, 10V | 3.5V @ 45μA | 2500pF @ 50V | 35nC @ 10V | 7ns | 5 ns | 20V | 63A Tc | 252A | 70 mJ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
IRFR13N20DTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2000 | HEXFET® | Not For New Designs | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 6.7056mm | ROHS3 Compliant | Contains Lead, Lead Free | Tin | 13A | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.3876mm | 6.22mm | 235mOhm | Surface Mount | -55°C~175°C TJ | 200V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 110W | 11 ns | 5.5V | 110W Tc | 210 ns | 13A | SWITCHING | 17 ns | SILICON | N-Channel | 235m Ω @ 8A, 10V | 5.5V @ 250μA | 830pF @ 25V | 38nC @ 10V | 27ns | 10 ns | 30V | 200V | 200V | 5.5 V | 13A Tc | 52A | 10V | ±30V | ||||||||||||||||||||||||||||||
IRF9Z34NSTRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 1997 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | Contains Lead, Lead Free | -19A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 9.65mm | 100mOhm | Surface Mount | -55°C~175°C TJ | -55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | 1 | DRAIN | Single | 68W | 13 ns | -2V | 3.8W Ta 68W Tc | 82 ns | -19A | 175°C | SWITCHING | 30 ns | SILICON | P-Channel | 100m Ω @ 10A, 10V | 4V @ 250μA | 620pF @ 25V | 35nC @ 10V | 55ns | 41 ns | 20V | -55V | 55V | -4 V | 19A Tc | 68A | 10V | ±20V | ||||||||||||||||||||||||||||||
SPD30P06PGBTMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 1999 | SIPMOS® | no | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | AVALANCHE RATED | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Not Halogen Free | 125W | 13 ns | -60V | 125W Tc | 30A | 0.075Ohm | 30 ns | SILICON | P-Channel | 75m Ω @ 21.5A, 10V | 4V @ 1.7mA | 1535pF @ 25V | 48nC @ 10V | 11ns | 20 ns | 20V | 30A Tc | 60V | 250 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
IRFR1018ETRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 6.7056mm | ROHS3 Compliant | Lead Free | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.3876mm | 6.22mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 110W | 13 ns | 110W Tc | 79mA | SWITCHING | 0.0084Ohm | 55 ns | SILICON | N-Channel | 8.4m Ω @ 47A, 10V | 4V @ 100μA | 2290pF @ 50V | 69nC @ 10V | 35ns | 46 ns | 20V | 60V | 56A | 56A Tc | 88 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
BSC900N20NS3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 62.5W | 200V | 62.5W Tc | 15.2A | SWITCHING | 0.09Ohm | SILICON | N-Channel | 90m Ω @ 7.6A, 10V | 4V @ 30μA | 920pF @ 100V | 11.6nC @ 10V | 4ns | 20V | 15.2A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
BSZ035N03MSGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2003 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | 8 | AVALANCHE RATED | 8-PowerTDFN | No SVHC | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | C BEND | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-C5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 2.1W | 10 ns | 2V | 2.1W Ta 69W Tc | 18A | SWITCHING | 0.0043Ohm | 30V | 38 ns | SILICON | N-Channel | 3.5m Ω @ 20A, 10V | 2V @ 250μA | 5700pF @ 15V | 74nC @ 10V | 5.8ns | 4.8 ns | 20V | 18A Ta 40A Tc | 30V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
BSC014NE2LSIATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.5W | 5 ns | 25V | 2.5W Ta 74W Tc | 33A | SWITCHING | 0.002Ohm | 25 ns | SILICON | N-Channel | 1.4m Ω @ 30A, 10V | 2V @ 250μA | 2700pF @ 12V | 39nC @ 10V | 3.6 ns | 20V | 33A Ta 100A Tc | 400A | 50 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
IRF6645TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 3.95mm | ROHS3 Compliant | Lead Free | Tin | 5.7A | No | 7 | DirectFET™ Isometric SJ | 410μm | 3.95mm | Surface Mount | -40°C~150°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | BOTTOM | R-XBCC-N3 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 42W | 9.2 ns | 2.2W Ta 42W Tc | 5.7mA | SWITCHING | 0.035Ohm | 18 ns | SILICON | N-Channel | 35m Ω @ 5.7A, 10V | 4.9V @ 50μA | 890pF @ 25V | 20nC @ 10V | 5ns | 5.1 ns | 20V | 100V | 5.7A Ta 25A Tc | 45A | 29 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
BSC010NE2LSIATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | 150°C | -55°C | ROHS3 Compliant | Contains Lead | Tin | 8 | 8-PowerTDFN | not_compliant | Surface Mount | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.5W | 25V | 2.5W Ta 96W Tc | 38A | SWITCHING | N-Channel | 1.05m Ω @ 30A, 10V | 2V @ 250μA | 4200pF @ 12V | 59nC @ 10V | 6.2ns | 20V | 38A Ta 100A Tc | 400A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
IRLI2910PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Through Hole | Tube | 2004 | HEXFET® | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | 10.6172mm | ROHS3 Compliant | Lead Free | 27A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE | TO-220-3 Full Pack | No SVHC | 9.8044mm | 4.826mm | 30mOhm | Through Hole | -55°C~175°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-220AB | ISOLATED | Single | 63W | 11 ns | 2V | 63W Tc | 31A | SWITCHING | 2.5kV | 11 ns | SILICON | N-Channel | 26m Ω @ 16A, 10V | 2V @ 250μA | 3700pF @ 25V | 140nC @ 5V | 100ns | 55 ns | 16V | 100V | 100V | 2 V | 31A Tc | 520 mJ | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||
IPT015N10N5ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | yes | Active | 1 (Unlimited) | 8 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerSFN | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | 1 | DRAIN | Halogen Free | Single | 36 ns | 100V | 375W Tc | 300A | SWITCHING | 85 ns | SILICON | N-Channel | 1.5m Ω @ 150A, 10V | 3.8V @ 250μA | 16000pF @ 50V | 211nC @ 10V | 30ns | 30 ns | 20V | 32A | 300A Tc | 652 mJ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
IRFPS3810PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 25 Weeks | Through Hole | Bulk | 2002 | HEXFET® | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | 16.0782mm | ROHS3 Compliant | Contains Lead, Lead Free | 170A | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-274AA | No SVHC | 20.8mm | 5.3mm | 9Ohm | Through Hole | -55°C~175°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Not Qualified | 1 | DRAIN | Single | 441W | 24 ns | 580W Tc | 330 ns | 170A | SWITCHING | 45 ns | SILICON | N-Channel | 9m Ω @ 100A, 10V | 5V @ 250μA | 6790pF @ 25V | 390nC @ 10V | 270ns | 140 ns | 30V | 100V | 100V | 5 V | 170A Tc | 670A | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
BSS84PH6327XTSA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2002 | SIPMOS® | Active | 1 (Unlimited) | 3 | EAR99 | 2.9mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | TO-236-3, SC-59, SOT-23-3 | No SVHC | 900μm | 1.3mm | 12Ohm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 17A | e3 | DUAL | GULL WING | 1 | Other Transistors | 60V | 1 | Halogen Free | Single | 360mW | 6.7 ns | -1.5V | -60V | 360mW Ta | 170mA | SWITCHING | 8.6 ns | SILICON | P-Channel | 8 Ω @ 170mA, 10V | 2V @ 20μA | 19pF @ 25V | 1.5nC @ 10V | 16.2ns | 20V | -1.5 V | 170mA Ta | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
IRLR8743TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 6.7056mm | ROHS3 Compliant | Lead Free | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.3876mm | 6.22mm | 3.1MOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 135W | 19 ns | 1.9V | 135W Tc | 160A | SWITCHING | 21 ns | SILICON | N-Channel | 3.1m Ω @ 25A, 10V | 2.35V @ 100μA | 4880pF @ 15V | 59nC @ 4.5V | 35ns | 17 ns | 20V | 30V | 1.9 V | 160A Tc | 640A | 250 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
BSC520N15NS3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Tape & Reel (TR) | 2003 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | 5.35mm | ROHS3 Compliant | Lead Free | 8 | 8-PowerTDFN | No SVHC | not_compliant | 1.1mm | 6.1mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | 8 | YES | R-PDSO-F5 | Not Qualified | 1 | DRAIN | Halogen Free | Single | 57W | 7 ns | 3V | 57W Tc | 21A | SWITCHING | 0.052Ohm | 10 ns | SILICON | N-Channel | 52m Ω @ 18A, 10V | 4V @ 35μA | 890pF @ 75V | 12nC @ 10V | 4ns | 3 ns | 20V | 150V | 3 V | 21A Tc | 60 mJ | 8V 10V | ±20V |
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