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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Lead Pitch Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode Manufacturer Package Identifier JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
    T1590N54P179XPSA1 T1590N54P179XPSA1 Infineon Technologies $0.00
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    T560N16T1CMODXPSA1 T560N16T1CMODXPSA1 Infineon Technologies $0.00
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    TDA21471AUMA1 TDA21471AUMA1 Infineon Technologies $0.00
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    		 Active 1 (Unlimited) ROHS3 Compliant
    IRF250P224 IRF250P224 Infineon Technologies $0.00
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    		 download 26 Weeks Tube 2013 StrongIRFET™ Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-247-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-247AC DRAIN 313W Tc SWITCHING 0.012Ohm 250V SILICON N-Channel 12m Ω @ 58A, 10V 4V @ 270μA 9915pF @ 50V 203nC @ 10V 96A 96A Tc 250V 384A 496 mJ 10V ±20V
    IPW60R070C6FKSA1 IPW60R070C6FKSA1 Infineon Technologies $0.00
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    		 download 2 Weeks Tube 2008 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-247AA 391W Tc SWITCHING 0.07Ohm 600V SILICON N-Channel 70m Ω @ 25.8A, 10V 3.5V @ 1.72mA 3800pF @ 100V 170nC @ 10V 53A 53A Tc 600V 159A 1135 mJ 10V ±20V
    IRFP4368PBF IRFP4368PBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2008 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 15.87mm ROHS3 Compliant Lead Free No 3 TO-247-3 No SVHC 20.7mm 5.3086mm 1.85MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-247AC DRAIN Single 520W 43 ns 4V 520W Tc 200 ns 350A SWITCHING 170 ns SILICON N-Channel 1.85m Ω @ 195A, 10V 4V @ 250μA 19230pF @ 50V 570nC @ 10V 220ns 260 ns 20V 75V 75V 4 V 195A Tc 10V ±20V
    IPW60R070P6XKSA1 IPW60R070P6XKSA1 Infineon Technologies $0.00
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    		 download 18 Weeks Through Hole Tube 2008 CoolMOS™ P6 Active 1 (Unlimited) 3 ROHS3 Compliant Lead Free 3 TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE Halogen Free 23 ns 600V 391W Tc 53.5A SWITCHING 0.07Ohm 64 ns SILICON N-Channel 70m Ω @ 20.6A, 10V 4.5V @ 1.72mA 4750pF @ 100V 100nC @ 10V 15ns 4 ns 30V 53.5A Tc 156A 10V ±20V
    IPW65R037C6FKSA1 IPW65R037C6FKSA1 Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2008 CoolMOS™ C6 yes Not For New Designs 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 1 SINGLE WITH BUILT-IN DIODE 500W 22 ns 650V 500W Tc 83.2A SWITCHING 140 ns SILICON N-Channel 37m Ω @ 33.1A, 10V 3.5V @ 3.3mA 7240pF @ 100V 330nC @ 10V 32ns 7 ns 20V 83.2A Tc 297A 10V ±20V
    IPP041N12N3GXKSA1 IPP041N12N3GXKSA1 Infineon Technologies $0.00
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    		 download 13 Weeks Through Hole Tube 2007 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 35 ns 120V 300W Tc 120A SWITCHING 0.0041Ohm 70 ns SILICON N-Channel 4.1m Ω @ 100A, 10V 4V @ 270μA 13800pF @ 60V 211nC @ 10V 52ns 21 ns 20V 120A Tc 480A 900 mJ 10V ±20V
    IPP075N15N3GXKSA1 IPP075N15N3GXKSA1 Infineon Technologies $0.00
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    		 download 13 Weeks Through Hole Tube 2008 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free No 3 TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE 3 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 300W 25 ns 150V 300W Tc 100A SWITCHING 0.0075Ohm 46 ns SILICON N-Channel 7.5m Ω @ 100A, 10V 4V @ 270μA 5470pF @ 75V 93nC @ 10V 35ns 14 ns 20V 100A Tc 400A 780 mJ 8V 10V ±20V
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    		 download 13 Weeks Through Hole Tube 2013 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead 3 TO-220-3 No SVHC not_compliant Through Hole 6.000006g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED 1 1 TO-220AB DRAIN Halogen Free Single 33 ns 3V 100V 375W Tc 120A SWITCHING 77 ns SILICON N-Channel 2.3m Ω @ 100A, 10V 3.8V @ 270μA 15600pF @ 50V 210nC @ 10V 26ns 29 ns 20V 100V 120A Tc 480A 979 mJ 6V 10V ±20V
    IRFSL3006PBF IRFSL3006PBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2008 HEXFET® Active 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant Lead Free No 3 TO-262-3 Long Leads, I2Pak, TO-262AA 9.65mm 4.826mm 2.5MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE 260 30 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 375W 16 ns 375W Tc 270A SWITCHING 118 ns SILICON N-Channel 2.5m Ω @ 170A, 10V 4V @ 250μA 8970pF @ 50V 300nC @ 10V 182ns 189 ns 20V 60V 195A Tc 10V ±20V
    IRFB3207PBF IRFB3207PBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2004 HEXFET® Active 1 (Unlimited) 3 EAR99 10.6426mm ROHS3 Compliant Lead Free 180A No 3 TO-220-3 No SVHC 2.54mm 4.82mm 4.826mm Through Hole -55°C~175°C TJ 75V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 300W 29 ns 4V 330W Tc 180A SWITCHING 0.0045Ohm 68 ns SILICON N-Channel 4.5m Ω @ 75A, 10V 4V @ 250μA 7600pF @ 50V 260nC @ 10V 120ns 74 ns 20V 75V 75V 4 V 75A 170A Tc 720A 10V ±20V
    SPP11N80C3XKSA1 SPP11N80C3XKSA1 Infineon Technologies $0.00
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    		 download 18 Weeks Tube 2005 CoolMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant AVALANCHE RATED TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB 156W Tc 0.45Ohm 800V SILICON N-Channel 450m Ω @ 7.1A, 10V 3.9V @ 680μA 1600pF @ 100V 85nC @ 10V 11A 11A Tc 800V 33A 470 mJ 10V ±20V
    IRL1004PBF IRL1004PBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2004 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.6426mm ROHS3 Compliant Lead Free Tin 130A No 3 AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE TO-220-3 No SVHC 8.77mm 4.82mm 6.5mOhm Through Hole -55°C~175°C TJ 40V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 200W 16 ns 1V 200W Tc 130A SWITCHING 25 ns SILICON N-Channel 6.5m Ω @ 78A, 10V 1V @ 250μA 5330pF @ 25V 100nC @ 4.5V 210ns 14 ns 16V 40V 40V 1 V 130A Tc 520A 700 mJ 4.5V 10V ±16V
    IPP60R170CFD7XKSA1 IPP60R170CFD7XKSA1 Infineon Technologies $0.00
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    		 download 18 Weeks Tube 2014 CoolMOS™ CFD7 Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 75W Tc SWITCHING 0.17Ohm 600V SILICON N-Channel 170m Ω @ 6A, 10V 4.5V @ 300μA 1199pF @ 400V 28nC @ 10V 14A 14A Tc 650V 51A 60 mJ 10V ±20V
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    		 download 13 Weeks Through Hole Tube 2008 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free No 3 TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE 3 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 94W 16 ns 40V 94W Tc 80A SWITCHING 23 ns SILICON N-Channel 4.1m Ω @ 80A, 10V 4V @ 45μA 4500pF @ 20V 56nC @ 10V 3.8ns 4.8 ns 20V 80A Tc 400A 60 mJ 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2003 HEXFET® Active 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant Lead Free 75A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-220-3 No SVHC 9.017mm 4.826mm 5.5MOhm Through Hole -55°C~175°C TJ 40V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 140W 16 ns 4V 140W Tc 35 ns 75A SWITCHING 38 ns SILICON N-Channel 5.5m Ω @ 75A, 10V 4V @ 250μA 3000pF @ 25V 100nC @ 10V 130ns 77 ns 20V 40V 75A Tc 470A 220 mJ 10V ±20V
    IPA90R1K2C3XKSA1 IPA90R1K2C3XKSA1 Infineon Technologies $0.00
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    		 download 29 Weeks Tube 2008 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-220-3 Full Pack Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB 31W Tc SWITCHING 900V SILICON N-Channel 1.2 Ω @ 2.8A, 10V 3.5V @ 310μA 710pF @ 100V 28nC @ 10V 3.1A 5.1A Tc 900V 10A 68 mJ 10V ±20V
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    		 download 18 Weeks Tube 2013 CoolMOS™ P7 Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-220-3 Full Pack Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED 29W Tc SWITCHING 0.45Ohm 800V SILICON N-Channel 450m Ω @ 4.5A, 10V 3.5V @ 220μA 770pF @ 500V 24nC @ 10V 11A Tc 800V 29A 29 mJ 10V ±20V
    IRFH7440TRPBF IRFH7440TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2012 HEXFET®, StrongIRFET™ Active 1 (Unlimited) EAR99 5.85mm ROHS3 Compliant Lead Free No 8 8-PowerTDFN No SVHC 1.05mm 5mm 2.4MOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 1 FET General Purpose Power Single 104W 12 ns 2.2V 104W Tc 85A 150°C 53 ns N-Channel 2.4m Ω @ 50A, 10V 3.9V @ 100μA 4574pF @ 25V 138nC @ 10V 45ns 42 ns 20V 40V 85A Tc 6V 10V ±20V
    SPD04N50C3ATMA1 SPD04N50C3ATMA1 Infineon Technologies $0.00
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    		 download 8 Weeks Surface Mount Tape & Reel (TR) 2005 CoolMOS™ Not For New Designs 1 (Unlimited) 150°C -55°C ROHS3 Compliant 4.5A 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~150°C TJ 560V MOSFET (Metal Oxide) 1 50W 10 ns 500V 850mOhm PG-TO252-3-1 50W Tc 4.5A 70 ns N-Channel 950mOhm @ 2.8A, 10V 3.9V @ 200μA 470pF @ 25V 22nC @ 10V 5ns 20V 4.5A Tc 500V 470pF 10V ±20V 950 mΩ
    IPT020N10N3ATMA1 IPT020N10N3ATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2012 OptiMOS™ Active 1 (Unlimited) 8 EAR99 ROHS3 Compliant Contains Lead 8 ULTRA LOW RESISTANCE 8-PowerSFN not_compliant 2.4mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE PG-HSOF-8 e3 Tin (Sn) SINGLE FLAT 260 40 1 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 375W 34 ns 2V 100V 375W Tc 300A 175°C 0.02Ohm 84 ns SILICON N-Channel 2m Ω @ 150A, 10V 3.5V @ 272μA 11200pF @ 50V 156nC @ 10V 20V 100V 300A Tc 6V 10V ±20V
    IPW65R019C7FKSA1 IPW65R019C7FKSA1 Infineon Technologies $0.00
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    		 download 18 Weeks Through Hole Tube 2008 CoolMOS™ C7 Active 1 (Unlimited) 3 ROHS3 Compliant Lead Free 3 TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE DRAIN 446W 30 ns 650V 446W Tc 75A SWITCHING 106 ns SILICON N-Channel 19m Ω @ 58.3A, 10V 4V @ 2.92mA 9900pF @ 400V 215nC @ 10V 27ns 5 ns 20V 75A Tc 496A 10V ±20V
    IPN50R2K0CEATMA1 IPN50R2K0CEATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Tape & Reel (TR) 2013 CoolMOS™ CE yes Active 3 (168 Hours) EAR99 ROHS3 Compliant 3 SOT-223-3 No SVHC not_compliant Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) e3 Tin (Sn) 3V 5W Tc 3.6A N-Channel 2 Ω @ 600mA, 13V 3.5V @ 50μA 124pF @ 100V 6nC @ 10V 3.6A Tc 500V 13V ±20V
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    		 download 18 Weeks Tape & Reel (TR) 2013 CoolMOS™ CE yes Active 3 (168 Hours) 3 EAR99 ROHS3 Compliant 3 SOT-223-3 No SVHC not_compliant Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL GULL WING NOT SPECIFIED NOT SPECIFIED YES 1 SINGLE WITH BUILT-IN DIODE DRAIN 3V 5W Tc 2.6A SWITCHING 3Ohm 500V SILICON N-Channel 3 Ω @ 400mA, 13V 3.5V @ 30μA 84pF @ 100V 4.3nC @ 10V 2.6A Tc 500V 13V ±20V
    IRFP250NPBF IRFP250NPBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2004 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 15.875mm ROHS3 Compliant Contains Lead, Lead Free 30A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-247-3 No SVHC 20.2946mm 5.3mm 75mOhm Through Hole -55°C~175°C TJ 200V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 250 30 FET General Purpose Power 1 TO-247AC DRAIN Single 214W 14 ns 214W Tc 279 ns 30A SWITCHING 41 ns SILICON N-Channel 75m Ω @ 18A, 10V 4V @ 250μA 2159pF @ 25V 123nC @ 10V 43ns 33 ns 20V 200V 200V 4 V 30A Tc 10V ±20V
    IRLR3105TRPBF IRLR3105TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2008 HEXFET® Active 1 (Unlimited) 2 EAR99 6.7056mm ROHS3 Compliant Lead Free No 3 AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 2.3876mm 6.22mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 57W 8 ns 57W Tc 25A SWITCHING 25 ns SILICON N-Channel 37m Ω @ 15A, 10V 3V @ 250μA 710pF @ 25V 20nC @ 5V 57ns 37 ns 16V 55V 25A Tc 100A 61 mJ 5V 10V ±16V
    BSC0906NSATMA1 BSC0906NSATMA1 Infineon Technologies $0.00
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    		 download 26 Weeks Surface Mount Tape & Reel (TR) 2013 OptiMOS™ no Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant Contains Lead 8 8-PowerTDFN not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL FLAT NOT SPECIFIED NOT SPECIFIED 8 R-PDSO-F5 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 30V 2.5W Ta 30W Tc 63A SWITCHING 0.0064Ohm SILICON N-Channel 4.5m Ω @ 30A, 10V 2V @ 250μA 870pF @ 15V 13nC @ 10V 3.8ns 20V 18A Ta 63A Tc 252A 14 mJ 4.5V 10V ±20V
    IPD50R280CEAUMA1 IPD50R280CEAUMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2008 CoolMOS™ yes Active 3 (168 Hours) 2 ROHS3 Compliant Contains Lead 3 TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE Halogen Free 500V 119W Tc SWITCHING 0.28Ohm SILICON N-Channel 280m Ω @ 4.2A, 13V 3.5V @ 350μA 773pF @ 100V 32.6nC @ 10V 13A Ta 550V 42.9A 13V ±20V