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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Max Power Dissipation Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Polarity/Channel Type Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
    SPP100N03S2-03 SPP100N03S2-03 Infineon Technologies $0.00
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    		 download Through Hole Tube 2003 OptiMOS™ Obsolete 1 (Unlimited) 3 EAR99 Non-RoHS Compliant Contains Lead 100A AVALANCHE RATED TO-220-3 Through Hole -55°C~175°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE e0 Tin/Lead (Sn/Pb) SINGLE NOT SPECIFIED NOT SPECIFIED 3 R-PSFM-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB 300W Tc 100A 0.0033Ohm SILICON N-Channel 3.3m Ω @ 80A, 10V 4V @ 250μA 7020pF @ 25V 150nC @ 10V 40ns 100A Tc 400A 810 mJ 10V ±20V
    IPI120N04S402AKSA1 IPI120N04S402AKSA1 Infineon Technologies $0.00
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    		 download 16 Weeks Through Hole Tube 2010 OptiMOS™ Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead 3 TO-262-3 Long Leads, I2Pak, TO-262AA not_compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE Halogen Free 27 ns 40V 158W Tc 120A 0.0021Ohm 30 ns SILICON N-Channel 2.1m Ω @ 100A, 10V 4V @ 110μA 10740pF @ 25V 134nC @ 10V 16ns 20V 120A Tc 480A 480 mJ 10V ±20V
    IPP50R250CPXKSA1 IPP50R250CPXKSA1 Infineon Technologies $0.00
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    		 download 40 Weeks Through Hole 2008 yes Not For New Designs 1 (Unlimited) 3 EAR99 150°C -55°C 10.36mm ROHS3 Compliant Lead Free 3 TO-220 15.95mm 4.57mm ENHANCEMENT MODE e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 114W 1 ISOLATED Halogen Free N-CHANNEL Single 114W 35 ns 500V 250mOhm 13A SWITCHING METAL-OXIDE SEMICONDUCTOR 80 ns 14ns 11 ns 20V 500V 500V 1.42nF 250 mΩ
    IRFSL7530PBF IRFSL7530PBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount, Through Hole Tube 2004 HEXFET®, StrongIRFET™ Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant 3 TO-262-3 Long Leads, I2Pak, TO-262AA No SVHC Surface Mount 2.084002g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED 1 FET General Purpose Power 1 DRAIN Single 375W 52 ns 3.7V 375W Tc 195A SWITCHING 0.002Ohm 172 ns SILICON N-Channel 2m Ω @ 100A, 10V 3.7V @ 250μA 13703pF @ 25V 411nC @ 10V 141ns 104 ns 20V 60V 195A Tc 760A 6V 10V ±20V
    AUIRFS3607TRL AUIRFS3607TRL Infineon Technologies $0.00
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    		 download 16 Weeks Tape & Reel (TR) 2010 HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 140W Tc SWITCHING 0.009Ohm 75V SILICON N-Channel 9m Ω @ 46A, 10V 4V @ 100μA 3070pF @ 50V 84nC @ 10V 80A 80A Tc 75V 310A 120 mJ 10V ±20V
    IPB50R199CPATMA1 IPB50R199CPATMA1 Infineon Technologies $0.00
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    		 download 8 Weeks Surface Mount Tape & Reel (TR) 2008 CoolMOS™ no Not For New Designs 1 (Unlimited) 2 ROHS3 Compliant Contains Lead No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING 4 R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 139W 35 ns 500V 139W Tc 17A SWITCHING 80 ns SILICON N-Channel 199m Ω @ 9.9A, 10V 3.5V @ 660μA 1800pF @ 100V 45nC @ 10V 14ns 10 ns 20V 17A Tc 550V 40A 10V ±20V
    IPL65R210CFDAUMA1 IPL65R210CFDAUMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2013 CoolMOS™ Active 2A (4 Weeks) 4 ROHS3 Compliant Contains Lead 4 4-PowerTSFN not_compliant Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NO LEAD NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 650V 151W Tc 16.6A SWITCHING 0.21Ohm SILICON N-Channel 210m Ω @ 7.3A, 10V 4.5V @ 700μA 1850pF @ 100V 68nC @ 10V 16.6A Tc 53A 10V ±20V
    IRL40S212 IRL40S212 Infineon Technologies $0.00
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    		 download 17 Weeks Surface Mount Tube 2013 StrongIRFET™ Not For New Designs 1 (Unlimited) EAR99 10.67mm ROHS3 Compliant Lead Free 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Unknown 4.83mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED Single 39 ns 2.4V 231W Tc 195A 88 ns N-Channel 1.9m Ω @ 100A, 10V 2.4V @ 150μA 8320pF @ 25V 137nC @ 4.5V 20V 195A Tc 40V 4.5V 10V ±20V
    IPA029N06NXKSA1 IPA029N06NXKSA1 Infineon Technologies $0.00
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    		 download 13 Weeks Through Hole Tube 2012 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 TO-220-3 Full Pack Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED Halogen Free 16 ns 60V 38W Tc 84A SWITCHING 0.0029Ohm 30 ns SILICON N-Channel 2.9m Ω @ 84A, 10V 3.3V @ 75μA 5125pF @ 30V 66nC @ 10V 15ns 11 ns 20V 84A Tc 140 mJ 6V 10V ±20V
    IRFSL7430PBF IRFSL7430PBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tube 2008 HEXFET®, StrongIRFET™ Active 1 (Unlimited) EAR99 ROHS3 Compliant 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC Surface Mount 2.084002g -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 1 FET General Purpose Power Single 3.9V 375W Tc 195A N-Channel 1.2m Ω @ 100A, 10V 3.9V @ 250μA 14240pF @ 25V 460nC @ 10V 195A Tc 40V 6V 10V ±20V
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    		 download 16 Weeks Through Hole Tube 2009 HEXFET® Not For New Designs 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant Lead Free 3 TO-220-3 16.51mm 4.826mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED FET General Purpose Power Not Qualified 1 TO-220AB DRAIN Single 375W 16 ns 375W Tc 270mA SWITCHING 0.0025Ohm 118 ns SILICON N-Channel 2.5m Ω @ 170A, 10V 4V @ 250μA 8970pF @ 50V 300nC @ 10V 182ns 189 ns 20V 60V 195A 195A Tc 1080A 10V ±20V
    IPB120N06S402ATMA2 IPB120N06S402ATMA2 Infineon Technologies $0.00
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    		 download 16 Weeks Surface Mount Tape & Reel (TR) 2009 Automotive, AEC-Q101, OptiMOS™ yes Active 1 (Unlimited) 2 10mm ROHS3 Compliant 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant 4.4mm 9.25mm Surface Mount 1.946308g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 1 DRAIN Halogen Free Single 188W 25 ns 60V 188W Tc 120A 0.0024Ohm 50 ns SILICON N-Channel 2.8m Ω @ 100A, 10V 4V @ 140μA 15750pF @ 25V 195nC @ 10V 5ns 10 ns 20V 60V 120A Tc 480A 560 mJ 10V ±20V
    IPB180P04P403ATMA1 IPB180P04P403ATMA1 Infineon Technologies $0.00
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    		 download 14 Weeks Surface Mount Tape & Reel (TR) 2002 Automotive, AEC-Q101, OptiMOS™ Not For New Designs 1 (Unlimited) 6 EAR99 10mm ROHS3 Compliant Contains Lead 7 TO-263-7, D2Pak (6 Leads + Tab) not_compliant 4.4mm 9.25mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G6 1 DRAIN Halogen Free Single 150W 48 ns -40V 150W Tc 180A 0.0028Ohm 72 ns SILICON P-Channel 2.8m Ω @ 100A, 10V 4V @ 410μA 17640pF @ 25V 250nC @ 10V 31ns 81 ns 20V -40V 180A Tc 40V 90 mJ 10V ±20V
    AUIRFB8407 AUIRFB8407 Infineon Technologies $0.00
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    		 download 16 Weeks Through Hole Tube 2001 HEXFET® Active 1 (Unlimited) EAR99 10.67mm ROHS3 Compliant Lead Free No 3 TO-220-3 No SVHC 9.02mm 3.43mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) 1 FET General Purpose Power Single 230W 19 ns 3V 230W Tc 195A 78 ns N-Channel 2m Ω @ 100A, 10V 4V @ 150μA 7330pF @ 25V 225nC @ 10V 70ns 53 ns 20V 3 V 195A Tc 40V 10V ±20V
    IPI120N04S401AKSA1 IPI120N04S401AKSA1 Infineon Technologies $0.00
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    		 download 16 Weeks Through Hole Tube 2010 OptiMOS™ Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead 3 TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE Halogen Free 34 ns 40V 188W Tc 120A 0.0019Ohm 41 ns SILICON N-Channel 1.9m Ω @ 100A, 10V 4V @ 140μA 14000pF @ 25V 176nC @ 10V 16ns 36 ns 20V 120A Tc 480A 750 mJ 10V ±20V
    AUIRFS8405TRL AUIRFS8405TRL Infineon Technologies $0.00
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    		 download 16 Weeks Tape & Reel (TR) 2010 HEXFET® Active 1 (Unlimited) EAR99 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED YES FET General Purpose Power Single 163W Tc N-Channel 2.3m Ω @ 100A, 10V 3.9V @ 100μA 5193pF @ 25V 161nC @ 10V 120A 120A Tc 40V 10V ±20V
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    		 Surface Mount Tube 2004 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 175°C -55°C 10.668mm ROHS3 Compliant Lead Free Tin 9.7A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 10.16mm 200mOhm Surface Mount 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 48W 4.5 ns 4V 3.8W Ta 48W Tc 150 ns 9.7A SWITCHING 32 ns N-Channel 200m Ω @ 5.7A, 10V 4V @ 250μA 330pF @ 25V 25nC @ 10V 23ns 23 ns 20V 100V 4 V 9.7A Tc 10V ±20V
    IRLZ44ZSPBF IRLZ44ZSPBF Infineon Technologies $0.00
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    		 download 10 Weeks Tube 2004 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 80W Tc SWITCHING 0.0135Ohm 55V SILICON N-Channel 13.5m Ω @ 31A, 10V 3V @ 250μA 1620pF @ 25V 36nC @ 5V 51A 51A Tc 55V 204A 78 mJ 4.5V 10V ±16V
    IRF3709SPBF IRF3709SPBF Infineon Technologies $0.00
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    		 download Surface Mount Tube 2001 HEXFET® Discontinued 1 (Unlimited) 150°C -55°C 10.668mm ROHS3 Compliant Lead Free 90A No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm 9MOhm Surface Mount -55°C~150°C TJ 30V MOSFET (Metal Oxide) 1 Single 120W 11 ns 3V 10.5mOhm D2PAK 3.1W Ta 120W Tc 90A 21 ns N-Channel 9mOhm @ 15A, 10V 3V @ 250μA 2672pF @ 16V 41nC @ 5V 171ns 9.2 ns 20V 30V 30V 3 V 90A Tc 30V 2.672nF 4.5V 10V ±20V 9 mΩ
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    		 download Through Hole Tube 2003 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 10.6426mm RoHS Compliant Lead Free 51A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-220-3 No SVHC 9.017mm 4.82mm 13.6MOhm Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 82W 13 ns 82W Tc 51A SWITCHING 37 ns SILICON N-Channel 13.6m Ω @ 31A, 10V 4V @ 250μA 1460pF @ 25V 46nC @ 10V 63ns 39 ns 20V 55V 55V 4 V 51A Tc 200A 97 mJ 10V ±20V
    IRF3707ZSPBF IRF3707ZSPBF Infineon Technologies $0.00
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    		 download Surface Mount Tube 2003 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 10.67mm ROHS3 Compliant Lead Free 59A No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.83mm 9.652mm 12.5MOhm Surface Mount -55°C~175°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 57W 9.8 ns 1.8V 57W Tc 59 ns 59A SWITCHING 12 ns SILICON N-Channel 9.5m Ω @ 21A, 10V 2.25V @ 25μA 1210pF @ 15V 15nC @ 4.5V 41ns 3.6 ns 20V 30V 30V 1.8 V 42A 59A Tc 40 mJ 4.5V 10V ±20V
    IRLZ24NSPBF IRLZ24NSPBF Infineon Technologies $0.00
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    		 Tube 1998 HEXFET® Discontinued 1 (Unlimited) EAR99 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 3.8W Ta 45W Tc N-Channel 60m Ω @ 11A, 10V 2V @ 250μA 480pF @ 25V 15nC @ 5V 18A Tc 55V 4V 10V ±16V
    IRFZ48ZSPBF IRFZ48ZSPBF Infineon Technologies $0.00
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    		 download Surface Mount Tube 2003 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 10.67mm RoHS Compliant Lead Free 61A 3 AVALANCHE RATED, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.576mm 9.652mm 11MOhm Surface Mount -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power Not Qualified 1 DRAIN Single 91W 15 ns 4V 91W Tc 100 ns 61A SWITCHING 35 ns SILICON N-Channel 11m Ω @ 37A, 10V 4V @ 250μA 1720pF @ 25V 64nC @ 10V 69ns 39 ns 20V 55V 61A Tc 240A 120 mJ 10V ±20V
    IRFZ48NSPBF IRFZ48NSPBF Infineon Technologies $0.00
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    		 download 22 Weeks Tube 2001 HEXFET® Discontinued 1 (Unlimited) EAR99 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 3.8W Ta 130W Tc N-Channel 14m Ω @ 32A, 10V 4V @ 250μA 1970pF @ 25V 81nC @ 10V 64A Tc 55V 10V ±20V
    IRF530NSPBF IRF530NSPBF Infineon Technologies $0.00
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    		 download Tube 1997 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.8W Ta 70W Tc SWITCHING 0.09Ohm 100V SILICON N-Channel 90m Ω @ 9A, 10V 4V @ 250μA 920pF @ 25V 37nC @ 10V 17A 17A Tc 100V 60A 93 mJ 10V ±20V
    IRF5305SPBF IRF5305SPBF Infineon Technologies $0.00
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    		 download Tube 2000 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252 DRAIN 3.8W Ta 110W Tc SWITCHING 0.06Ohm 55V SILICON P-Channel 60m Ω @ 16A, 10V 4V @ 250μA 1200pF @ 25V 63nC @ 10V 31A 31A Tc 55V 110A 280 mJ 10V ±20V
    IRL540NSPBF IRL540NSPBF Infineon Technologies $0.00
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    		 download 7 Weeks Tube 1998 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.8W Ta 140W Tc SWITCHING 0.053Ohm 100V SILICON N-Channel 44m Ω @ 18A, 10V 2V @ 250μA 1800pF @ 25V 74nC @ 5V 36A 36A Tc 100V 120A 310 mJ 4V 10V ±16V
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    		 download Surface Mount Tube 2004 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 175°C -55°C 10.668mm ROHS3 Compliant Lead Free 53A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.652mm 16.5mOhm Surface Mount 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 120W 14 ns 4V 3.8W Ta 107W Tc 53A SWITCHING 52 ns N-Channel 16.5m Ω @ 28A, 10V 4V @ 250μA 1696pF @ 25V 72nC @ 10V 76ns 57 ns 20V 55V 55V 4 V 53A Tc 10V ±20V
    IRF9530NSPBF IRF9530NSPBF Infineon Technologies $0.00
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    		 download 14 Weeks Tube 1998 HEXFET® Discontinued 1 (Unlimited) EAR99 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 3.8W Ta 79W Tc P-Channel 200m Ω @ 8.4A, 10V 4V @ 250μA 760pF @ 25V 58nC @ 10V 14A Tc 100V 10V ±20V
    IRFZ44NSPBF IRFZ44NSPBF Infineon Technologies $0.00
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    		 download Tube 2001 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.8W Ta 94W Tc SWITCHING 0.0175Ohm 55V SILICON N-Channel 17.5m Ω @ 25A, 10V 4V @ 250μA 1470pF @ 25V 63nC @ 10V 49A 49A Tc 55V 160A 150 mJ 10V ±20V