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Infineon Technologies(12661)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Manufacturer Package Identifier | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Reference Standard | Number of Elements | Configuration | JEDEC-95 Code | Forward Voltage | Case Connection | Halogen Free | Row Spacing | Polarity/Channel Type | Element Configuration | Power Dissipation | Breakdown Voltage | Min Breakdown Voltage | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | FET Technology | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| AUIRFZ48N | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Through Hole | Tube | 2011 | HEXFET® | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | 1 | 160W | 12 ns | 160W Tc | 69A | 37 ns | N-Channel | 14m Ω @ 40A, 10V | 4V @ 100μA | 1900pF @ 25V | 63nC @ 10V | 62ns | 4.5 ns | 20V | 55V | 69A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB065N10N3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 19 ns | 100V | 150W Tc | 80A | SWITCHING | 0.0065Ohm | 37 ns | SILICON | N-Channel | 6.5m Ω @ 80A, 10V | 3.5V @ 90μA | 4910pF @ 50V | 64nC @ 10V | 9 ns | 20V | 80A Tc | 160 mJ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFN8405TR | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2014 | HEXFET® | Not For New Designs | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 8 | 8-PowerTDFN | No SVHC | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | 3.9V | 1.6mOhm | PQFN (5x6) | 3.3W Ta 136W Tc | 95A | N-Channel | 2mOhm @ 50A, 10V | 3.9V @ 100μA | 5142pF @ 25V | 117nC @ 10V | 95A Tc | 40V | 5.142nF | 10V | ±20V | 2 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF7736M2TR | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | HEXFET® | Active | 1 (Unlimited) | 5 | ROHS3 Compliant | Lead Free | No | 9 | HIGH RELIABILITY | DirectFET™ Isometric M4 | No SVHC | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | R-XBCC-N5 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 63W | 21 ns | 3V | 2.5W Ta 63W Tc | 22A | SWITCHING | 0.003Ohm | 39 ns | SILICON | N-Channel | 3m Ω @ 65A, 10V | 4V @ 150μA | 4267pF @ 25V | 108nC @ 10V | 43ns | 27 ns | 20V | 40V | 22A Ta 108A Tc | 432A | 286 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPI80N08S207AKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Through Hole | Tube | 2006 | OptiMOS™ | Obsolete | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-262-3 Long Leads, I2Pak, TO-262AA | not_compliant | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | SINGLE WITH BUILT-IN DIODE | TO-262AB | Halogen Free | 75V | 300W Tc | 80A | 0.0074Ohm | SILICON | N-Channel | 7.4m Ω @ 80A, 10V | 4V @ 250μA | 4700pF @ 25V | 180nC @ 10V | 80A Tc | 810 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRL3705Z | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Through Hole | Tube | 2010 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 10.67mm | ROHS3 Compliant | No | 3 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | TO-220-3 | 9.02mm | 4.83mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 130W | 17 ns | 130W Tc | 75A | SWITCHING | 0.008Ohm | 26 ns | SILICON | N-Channel | 8m Ω @ 52A, 10V | 3V @ 250μA | 2880pF @ 25V | 60nC @ 5V | 240ns | 83 ns | 16V | 55V | 75A Tc | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF6215 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Through Hole | Tube | 2006 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 10.66mm | ROHS3 Compliant | No | 3 | AVALANCHE RATED | TO-220-3 | No SVHC | 16.51mm | 4.82mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Other Transistors | 1 | TO-220AB | DRAIN | Single | 110W | 14 ns | -2V | 110W Tc | 13A | SWITCHING | 0.29Ohm | 53 ns | SILICON | P-Channel | 290m Ω @ 6.6A, 10V | 4V @ 250μA | 860pF @ 25V | 66nC @ 10V | 36ns | 37 ns | 20V | -150V | 13A Tc | 150V | 44A | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPP80N06S2L11AKSA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Through Hole | Tube | 2010 | OptiMOS™ | yes | Obsolete | 1 (Unlimited) | 3 | ROHS3 Compliant | Contains Lead | No | 3 | LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | Halogen Free | 11 ns | 55V | 158W Tc | 80A | 0.0147Ohm | 46 ns | SILICON | N-Channel | 10.7m Ω @ 40A, 10V | 2V @ 93μA | 2075pF @ 25V | 80nC @ 10V | 32ns | 13 ns | 20V | 80A Tc | 280 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPL65R340CFDAUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | CoolMOS™ | Not For New Designs | 2A (4 Weeks) | EAR99 | ROHS3 Compliant | Contains Lead | 4 | 4-PowerTSFN | not_compliant | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 2 | 1 | Halogen Free | 11 ns | 650V | 104.2W Tc | 10.9A | 45 ns | N-Channel | 340m Ω @ 4.4A, 10V | 4.5V @ 400μA | 1100pF @ 100V | 41nC @ 10V | 7.5ns | 7 ns | 20V | 650V | 10.9A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP70N12S3L12AKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 2016 | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | not_compliant | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | THROUGH-HOLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | AEC-Q101 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | N-CHANNEL | 0.0158Ohm | 120V | METAL-OXIDE SEMICONDUCTOR | SILICON | 70A | 280A | 410 mJ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF1405STRRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Tape & Reel (TR) | 2004 | HEXFET® | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 200W Tc | SWITCHING | 0.0053Ohm | 55V | SILICON | N-Channel | 5.3m Ω @ 101A, 10V | 4V @ 250μA | 5480pF @ 25V | 260nC @ 10V | 75A | 131A Tc | 55V | 680A | 590 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFIB41N15DPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Through Hole | Tube | 2003 | HEXFET® | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | 10.6172mm | ROHS3 Compliant | Lead Free | 41A | No | 3 | AVALANCHE RATED | TO-220-3 Full Pack | No SVHC | 16.12mm | 4.826mm | Through Hole | -55°C~175°C TJ | 150V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | 40 | FET General Purpose Power | 1 | TO-220AB | ISOLATED | Single | 200W | 16 ns | 5.5V | 48W Tc | 41A | SWITCHING | 0.045Ohm | 25 ns | SILICON | N-Channel | 45m Ω @ 25A, 10V | 5.5V @ 250μA | 2520pF @ 25V | 110nC @ 10V | 63ns | 14 ns | 30V | 150V | 150V | 5.5 V | 41A Tc | 470 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| AUIRFR8405TRL | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Tape & Reel (TR) | 2015 | HEXFET® | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | IRFR8405 | YES | FET General Purpose Power | Single | 163W Tc | N-Channel | 1.98m Ω @ 90A, 10V | 3.9V @ 100μA | 5171pF @ 25V | 155nC @ 10V | 100A | 100A Tc | 40V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFSL8405 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Through Hole | Tube | 2013 | HEXFET® | Active | 1 (Unlimited) | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | No | 3 | TO-262-3 Long Leads, I2Pak, TO-262AA | No SVHC | 9.65mm | 4.83mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | 1 | FET General Purpose Power | Single | 163W | 14 ns | 163W Tc | 120A | 55 ns | N-Channel | 2.3m Ω @ 100A, 10V | 3.9V @ 100μA | 5193pF @ 25V | 161nC @ 10V | 128ns | 77 ns | 20V | 3 V | 120A Tc | 40V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI80N06S207AKSA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Through Hole | Tube | 2010 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | No | 3 | TO-262-3 Long Leads, I2Pak, TO-262AA | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | 1 | SINGLE WITH BUILT-IN DIODE | 16 ns | 55V | 250W Tc | 80A | 0.0066Ohm | 61 ns | SILICON | N-Channel | 6.6m Ω @ 68A, 10V | 4V @ 180μA | 3400pF @ 25V | 110nC @ 10V | 37ns | 36 ns | 20V | 80A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB60R120P7ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | 2014 | CoolMOS™ P7 | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | 4.7mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G2 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | 95W | 21 ns | 95W Tc | 26A | 150°C | SWITCHING | 81 ns | SILICON | N-Channel | 120m Ω @ 8.2A, 10V | 4V @ 410μA | 1544pF @ 400V | 36nC @ 10V | 20V | 600V | 26A Tc | 650V | 78A | 82 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLS4030TRL7PP | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | HEXFET® | yes | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | No | 7 | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | No SVHC | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | R-PSSO-G6 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | P-CHANNEL | 370W | 53 ns | 2.5V | 370W Tc | 190A | SWITCHING | 0.0039Ohm | 110 ns | SILICON | N-Channel | 3.9m Ω @ 110A, 10V | 2.5V @ 250μA | 11490pF @ 50V | 140nC @ 4.5V | 160ns | 87 ns | 16V | 100V | 1 V | 190A Tc | 320 mJ | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||
| IPB60R060P7ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | 2014 | CoolMOS™ P7 | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | 4.7mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G2 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 164W | 23 ns | 164W Tc | 48A | 150°C | SWITCHING | 0.06Ohm | 79 ns | SILICON | N-Channel | 60m Ω @ 15.9A, 10V | 4V @ 800μA | 2895pF @ 400V | 67nC @ 10V | 20V | 600V | 48A Tc | 650V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLML2803TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2007 | HEXFET® | Active | 1 (Unlimited) | 3 | SMD/SMT | EAR99 | 3.0226mm | ROHS3 Compliant | Lead Free | Tin | 1.2A | No | 3 | HIGH RELIABILITY | TO-236-3, SC-59, SOT-23-3 | No SVHC | 1.12mm | 1.397mm | 250mOhm | Surface Mount | -55°C~150°C TJ | 30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Micro3 | e3 | DUAL | GULL WING | 1 | FET General Purpose Power | 1 | Single | 540mW | 30V | 3.9 ns | 1V | 540mW Ta | 1.2A | 150°C | SWITCHING | 9 ns | SILICON | N-Channel | 250m Ω @ 910mA, 10V | 1V @ 250μA | 85pF @ 25V | 5nC @ 10V | 4ns | 1.7 ns | 20V | 30V | 30V | 1 V | 1.2A Ta | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IPB180N10S402ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | Automotive, AEC-Q101, OptiMOS™ | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | Contains Lead | TO-263-7, D2Pak (6 Leads + Tab) | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G6 | 1 | DRAIN | Halogen Free | Single | 300W | 15 ns | 100V | 300W Tc | 180A | 0.0025Ohm | 30 ns | SILICON | N-Channel | 2.5m Ω @ 100A, 10V | 3.5V @ 275μA | 14600pF @ 25V | 200nC @ 10V | 9ns | 40 ns | 20V | 180A Tc | 720A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR2905ZTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | HEXFET® | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 6.7056mm | ROHS3 Compliant | Contains Lead, Lead Free | 60A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.2606mm | 6.22mm | 13.5MOhm | Surface Mount | -55°C~175°C TJ | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 110W | 14 ns | 3V | 110W Tc | 33 ns | 42mA | SWITCHING | 24 ns | SILICON | N-Channel | 13.5m Ω @ 36A, 10V | 3V @ 250μA | 1570pF @ 25V | 35nC @ 5V | 130ns | 33 ns | 16V | 55V | 55V | 3 V | 42A | 42A Tc | 240A | 85 mJ | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||
| IRFR9120NTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 1998 | HEXFET® | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 6.7056mm | ROHS3 Compliant | Contains Lead, Lead Free | Tin | -6.6A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.3876mm | 6.22mm | 480mOhm | Surface Mount | -55°C~150°C TJ | -100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | Other Transistors | 1 | TO-252AA | DRAIN | Single | 40W | 14 ns | -4V | 40W Tc | 150 ns | -6.6A | SWITCHING | 28 ns | SILICON | P-Channel | 480m Ω @ 3.9A, 10V | 4V @ 250μA | 350pF @ 25V | 27nC @ 10V | 47ns | 31 ns | 20V | -100V | 100V | -4 V | 6.6A Tc | 26A | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRF7406TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 8 | EAR99 | 4.9784mm | ROHS3 Compliant | Lead Free | Tin | -5.8A | No | 8 | ULTRA LOW RESISTANCE | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.75mm | 3.9878mm | 45mOhm | Surface Mount | -55°C~150°C TJ | -30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 30 | 1 | 1 | 6.3 mm | Single | 2.5W | 16 ns | -1V | 2.5W Ta | 63 ns | -5.8A | 150°C | SWITCHING | 45 ns | SILICON | P-Channel | 45m Ω @ 2.8A, 10V | 1V @ 250μA | 1100pF @ 25V | 59nC @ 10V | 33ns | 47 ns | 20V | -30V | -30V | -1 V | 5.8A Ta | 30V | 23A | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRF7468TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Not For New Designs | 1 (Unlimited) | 8 | 4.9784mm | ROHS3 Compliant | Lead Free | 9.4A | No | 8 | AVALANCHE RATED | 8-SOIC (0.154, 3.90mm Width) | 1.4986mm | 3.9878mm | 15.5MOhm | Surface Mount | -55°C~150°C TJ | 40V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | 1 | SINGLE WITH BUILT-IN DIODE | 2.5W | 7.6 ns | 2.5W Ta | 9.4A | SWITCHING | 20 ns | SILICON | N-Channel | 15.5m Ω @ 9.4A, 10V | 2V @ 250μA | 2460pF @ 20V | 34nC @ 4.5V | 2.3ns | 3.8 ns | 12V | 40V | 9.4A Ta | 75A | 4.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9393TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | HEXFET® | Active | 1 (Unlimited) | 8 | EAR99 | 4.9784mm | ROHS3 Compliant | No | 8 | 8-SOIC (0.154, 3.90mm Width) | 1.4986mm | 3.9878mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | Other Transistors | 1 | Single | 2.5W | 16 ns | 2.5W Ta | 9.2A | SWITCHING | 55 ns | SILICON | P-Channel | 13.3m Ω @ 9.2A, 20V | 2.4V @ 25μA | 1110pF @ 25V | 38nC @ 10V | 44ns | 49 ns | 25V | -30V | 9.2A Ta | 30V | 75A | 10V 20V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC070N10NS5ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | yes | Active | 1 (Unlimited) | 5 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | 1.1mm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-F5 | 1 | 1 | DRAIN | Halogen Free | Single | 2.5W | 13 ns | 100V | 2.5W Ta 83W Tc | 14A | 150°C | SWITCHING | 0.007Ohm | 24 ns | SILICON | N-Channel | 7m Ω @ 40A, 10V | 3.8V @ 50μA | 2700pF @ 50V | 38nC @ 10V | 5ns | 6 ns | 20V | 100V | 80A Tc | 320A | 55 mJ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRF7424TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | SMD/SMT | EAR99 | 4.9784mm | ROHS3 Compliant | Lead Free | Tin | -11A | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.75mm | 4.05mm | 13.5MOhm | Surface Mount | -55°C~150°C TJ | -30V | MOSFET (Metal Oxide) | 1 | Other Transistors | 1 | -1.2V | 6.3 mm | Single | 2.5W | 15 ns | -2.5V | 2.5W Ta | 60 ns | -11A | 150°C | 150 ns | SILICON | P-Channel | 13.5m Ω @ 11A, 10V | 2.5V @ 250μA | 4030pF @ 25V | 110nC @ 10V | 23ns | 76 ns | 20V | -30V | -30V | -2.5 V | 11A Ta | 30V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| BSZ018NE2LSIATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | no | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 8 | S-PDSO-N3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.1W | 5.2 ns | 25V | 2.1W Ta 69W Tc | 22A | SWITCHING | 0.0025Ohm | 25 ns | SILICON | N-Channel | 1.8m Ω @ 20A, 10V | 2V @ 250μA | 2500pF @ 12V | 36nC @ 10V | 4.8ns | 3.6 ns | 20V | 22A Ta 40A Tc | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRF7455TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 8 | EAR99 | 4.9784mm | ROHS3 Compliant | Contains Lead, Lead Free | 15A | No | 8 | AVALANCHE RATED | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.75mm | 3.9878mm | 7.5mOhm | Surface Mount | -55°C~150°C TJ | 30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | 1 | 1 | Single | 2.5W | 30V | 17 ns | 2V | 2.5W Ta | 96 ns | 15A | 150°C | SWITCHING | 51 ns | SILICON | N-Channel | 7.5m Ω @ 15A, 10V | 2V @ 250μA | 3480pF @ 25V | 56nC @ 5V | 18ns | 44 ns | 12V | 30V | 30V | 2 V | 15A Ta | 200 mJ | 2.8V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||
| BSC015NE2LS5IATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | OptiMOS™ | yes | Active | 1 (Unlimited) | 5 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-F5 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 25V | 2.5W Ta 50W Tc | 100A | SWITCHING | 0.0022Ohm | SILICON | N-Channel | 1.5m Ω @ 30A, 10V | 2V @ 250μA | 2000pF @ 12V | 30nC @ 10V | 33A | 33A Ta 100A Tc | 400A | 4.5V 10V | ±16V |