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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Lead Pitch Height Width Resistance Mounting Type Operating Temperature Voltage - Rated DC Technology Operating Mode JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Max Power Dissipation Power - Max Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Row Spacing Polarity/Channel Type Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
    IRFI4020H-117P IRFI4020H-117P Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2006 Active 1 (Unlimited) 5 EAR99 10.6172mm ROHS3 Compliant Lead Free No 5 TO-220-5 Full Pack No SVHC 9.02mm 4.826mm 100MOhm Through Hole -55°C~150°C TJ ENHANCEMENT MODE SINGLE FET General Purpose Power 21W 2 DRAIN Dual 21W 8.4 ns 4.9V 110 ns 9.1A AMPLIFIER METAL-OXIDE SEMICONDUCTOR 18 ns SILICON 2 N-Channel (Dual) 100m Ω @ 5.5A, 10V 4.9V @ 100μA 1240pF @ 25V 29nC @ 10V 8ns 4 ns 20V 200V Standard 4.9 V 200V 36A 130 mJ
    IRFP4321PBF IRFP4321PBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2006 HEXFET® Active 1 (Unlimited) Through Hole 175°C -55°C 15.875mm ROHS3 Compliant Lead Free 78A No 3 TO-247-3 No SVHC 20.3mm 5.3mm 15.5MOhm Through Hole -55°C~175°C TJ 150V MOSFET (Metal Oxide) Single 310mW 18 ns 5V 15.5mOhm TO-247AC 310W Tc 130 ns 78A 25 ns N-Channel 15.5mOhm @ 33A, 10V 5V @ 250μA 4460pF @ 25V 110nC @ 10V 60ns 35 ns 30V 150V 150V 5 V 78A Tc 150V 4.46nF 10V ±30V 15.5 mΩ
    SPA17N80C3XKSA1 SPA17N80C3XKSA1 Infineon Technologies $0.00
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    		 download 18 Weeks Tube 2008 CoolMOS™ yes Active 1 (Unlimited) 3 ROHS3 Compliant AVALANCHE RATED TO-220-3 Full Pack Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED 42W Tc SWITCHING 0.29Ohm 800V SILICON N-Channel 290m Ω @ 11A, 10V 3.9V @ 1mA 2320pF @ 25V 177nC @ 10V 17A 17A Tc 800V 51A 670 mJ 10V ±20V
    IPP030N10N3GXKSA1 IPP030N10N3GXKSA1 Infineon Technologies $0.00
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    		 download 13 Weeks Through Hole Tube 2008 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 TO-220-3 No SVHC Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 300W 34 ns 100V 300W Tc 100A SWITCHING 84 ns SILICON N-Channel 3m Ω @ 100A, 10V 3.5V @ 275μA 14800pF @ 50V 206nC @ 10V 58ns 28 ns 20V 100A Tc 400A 6V 10V ±20V
    IRFP90N20DPBF IRFP90N20DPBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Bulk 2001 HEXFET® Active 1 (Unlimited) 3 EAR99 15.875mm ROHS3 Compliant Lead Free 94A No 3 TO-247-3 No SVHC 20.3mm 5.3mm 23mOhm Through Hole -55°C~175°C TJ 200V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN OVER NICKEL 250 30 1 FET General Purpose Power 1 TO-247AC DRAIN Single 580W 23 ns 5V 580W Tc 340 ns 94A SWITCHING 43 ns SILICON N-Channel 23m Ω @ 56A, 10V 5V @ 250μA 6040pF @ 25V 270nC @ 10V 160ns 79 ns 30V 200V 200V 5 V 90A 94A Tc 10V ±30V
    IRFP4868PBF IRFP4868PBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2012 Active 1 (Unlimited) 3 EAR99 15.87mm ROHS3 Compliant Lead Free No 3 TO-247-3 No SVHC 24.99mm 5.31mm 32MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 1 FET General Purpose Power 1 TO-247AC DRAIN Single 517W 24 ns 3V 517W Tc 351 ns 70A 175°C SWITCHING 62 ns SILICON N-Channel 32m Ω @ 42A, 10V 5V @ 250μA 10774pF @ 50V 270nC @ 10V 16ns 45 ns 20V 300V 70A Tc 280A 10V ±20V
    IRF7504TRPBF IRF7504TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 1997 HEXFET® Not For New Designs 2 (1 Year) 8 3mm ROHS3 Compliant Lead Free Tin -1.7A No 8 LOGIC LEVEL COMPATIBLE 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) No SVHC 860μm 3mm 270mOhm Surface Mount -55°C~150°C TJ -20V ENHANCEMENT MODE e3 GULL WING IRF7504PBF 1.25W 2 Dual 1.25W 9.1 ns -700mV -1.7A SWITCHING METAL-OXIDE SEMICONDUCTOR 38 ns SILICON 2 P-Channel (Dual) 270m Ω @ 1.2A, 4.5V 700mV @ 250μA 240pF @ 15V 8.2nC @ 4.5V 35ns 43 ns 12V -20V Logic Level Gate 1.7A 20V 9.6A
    IRF7907TRPBF IRF7907TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2008 HEXFET® Active 1 (Unlimited) 8 EAR99 4.9784mm ROHS3 Compliant Lead Free No 8 8-SOIC (0.154, 3.90mm Width) 1.4986mm 3.9878mm Surface Mount -55°C~150°C TJ ENHANCEMENT MODE e3 Matte Tin (Sn) GULL WING 260 30 IRF7907PBF FET General Purpose Power 2W 2 Dual 2W 11A METAL-OXIDE SEMICONDUCTOR SILICON 2 N-Channel (Dual) 16.4m Ω @ 9.1A, 10V 2.35V @ 25μA 850pF @ 15V 10nC @ 4.5V 20V 30V Logic Level Gate 9.1A 11A 15 mJ
    IPG20N04S4L07ATMA1 IPG20N04S4L07ATMA1 Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2010 Automotive, AEC-Q101, OptiMOS™ Active 1 (Unlimited) 8 EAR99 ROHS3 Compliant Contains Lead 8 LOGIC LEVEL COMPATIBLE 8-PowerVDFN not_compliant Surface Mount -55°C~175°C TJ ENHANCEMENT MODE e3 Tin (Sn) FLAT NOT SPECIFIED NOT SPECIFIED 65W 65W 2 SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE Halogen Free 9 ns 40V 20A 0.0072Ohm METAL-OXIDE SEMICONDUCTOR 50 ns SILICON 2 N-Channel (Dual) 7.2m Ω @ 17A, 10V 2.2V @ 30μA 3980pF @ 25V 50nC @ 10V 4ns 25 ns 16V Logic Level Gate 230 mJ
    IRF5803TRPBF IRF5803TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2001 HEXFET® Active 1 (Unlimited) EAR99 3.1mm ROHS3 Compliant Contains Lead -3.4A No 6 SOT-23-6 Thin, TSOT-23-6 No SVHC 1.45mm 1.4986mm 112MOhm Surface Mount -55°C~150°C TJ -40V MOSFET (Metal Oxide) e3 Matte Tin (Sn) 1 Other Transistors Single 2W 43 ns -3V 2W Ta -3.4A 150°C 88 ns P-Channel 112m Ω @ 3.4A, 10V 3V @ 250μA 1110pF @ 25V 37nC @ 10V 550ns 50 ns 20V -40V 3.4A Ta 40V 4.5V 10V ±20V
    IRF8714TRPBF IRF8714TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2004 HEXFET® Active 1 (Unlimited) 8 EAR99 4.9784mm ROHS3 Compliant Lead Free Tin No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.4986mm 3.9878mm 8.7MOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL GULL WING 260 30 FET General Purpose Power 1 Single 2.5W 10 ns 2.5W Ta 14A SWITCHING 11 ns SILICON N-Channel 8.7m Ω @ 14A, 10V 2.35V @ 25μA 1020pF @ 15V 12nC @ 4.5V 9.9ns 5 ns 20V 30V 1.8 V 14A Ta 65 mJ 4.5V 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 1999 HEXFET® Active 1 (Unlimited) 8 EAR99 4.9784mm ROHS3 Compliant Contains Lead, Lead Free -3.4A No 8 ULTRA LOW RESISTANCE 8-SOIC (0.154, 3.90mm Width) No SVHC 1.75mm 3.9878mm 105mOhm Surface Mount -55°C~150°C TJ -55V ENHANCEMENT MODE GULL WING IRF7342PBF 2 2W 2 6.3 mm Dual 2W 14 ns -1V 80 ns -3.4A 150°C SWITCHING METAL-OXIDE SEMICONDUCTOR 43 ns SILICON 2 P-Channel (Dual) 105m Ω @ 3.4A, 10V 1V @ 250μA 690pF @ 25V 38nC @ 10V 10ns 22 ns 20V -55V Logic Level Gate -1 V 3.4A 55V 114 mJ
    IRF7105TRPBF IRF7105TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2003 HEXFET® Active 1 (Unlimited) 8 EAR99 4.9784mm ROHS3 Compliant Lead Free 3.5A No 8 ULTRA LOW RESISTANCE 8-SOIC (0.154, 3.90mm Width) No SVHC 1.75mm 3.9878mm 100mOhm Surface Mount -55°C~150°C TJ ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING IRF7105PBF 2 2W 2 N-CHANNEL AND P-CHANNEL 2W 7 ns 1V 3.5A 150°C SWITCHING METAL-OXIDE SEMICONDUCTOR 45 ns SILICON N and P-Channel 100m Ω @ 1A, 10V 3V @ 250μA 330pF @ 15V 27nC @ 10V 13ns 37 ns 20V 25V Standard 3 V 3.5A 2.3A 14A
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 1997 HEXFET® Active 1 (Unlimited) 8 EAR99 4.9784mm ROHS3 Compliant Lead Free Tin -3.6A No 8 ULTRA LOW RESISTANCE 8-SOIC (0.154, 3.90mm Width) No SVHC 1.75mm 4.05mm 100mOhm Surface Mount -55°C~150°C TJ -30V ENHANCEMENT MODE e3 GULL WING IRF7306PBF 2 2W 2 6.3 mm Dual 2W 11 ns -1V 80 ns -3.6A 150°C SWITCHING METAL-OXIDE SEMICONDUCTOR 25 ns SILICON 2 P-Channel (Dual) 100m Ω @ 1.8A, 10V 1V @ 250μA 440pF @ 25V 25nC @ 10V 17ns 18 ns 20V -30V Logic Level Gate -1 V 3.6A 30V 14A
    IRLR8726TRPBF IRLR8726TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2007 HEXFET® Active 1 (Unlimited) 2 EAR99 6.7056mm ROHS3 Compliant No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 2.3876mm 6.22mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 75W 12 ns 75W Tc 86A SWITCHING 0.058Ohm 15 ns SILICON N-Channel 5.8m Ω @ 25A, 10V 2.35V @ 50μA 2150pF @ 15V 23nC @ 4.5V 49ns 16 ns 12V 30V 86A Tc 4.5V 10V ±20V
    IRFS4127TRLPBF IRFS4127TRLPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2008 HEXFET® Active 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Lead Free 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.826mm 9.652mm 22MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power Not Qualified 1 DRAIN Single 375W 17 ns 375W Tc 72A SWITCHING 56 ns SILICON N-Channel 22m Ω @ 44A, 10V 5V @ 250μA 5380pF @ 50V 150nC @ 10V 18ns 22 ns 20V 200V 72A Tc 250 mJ 10V ±20V
    IPP052NE7N3GXKSA1 IPP052NE7N3GXKSA1 Infineon Technologies $0.00
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    		 download 13 Weeks Through Hole Tube 2011 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 150W 14 ns 75V 150W Tc 80A SWITCHING 0.0052Ohm 30 ns SILICON N-Channel 5.2m Ω @ 80A, 10V 3.8V @ 91μA 4750pF @ 37.5V 68nC @ 10V 11ns 8 ns 20V 80A Tc 10V ±20V
    IRFP4668PBF IRFP4668PBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2008 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 15.87mm ROHS3 Compliant Lead Free Tin No 3 TO-247-3 No SVHC 24.99mm 5.3086mm 9.7MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 250 30 1 FET General Purpose Power 1 TO-247AC DRAIN Single 520W 41 ns 5V 520W Tc 130A 175°C SWITCHING 64 ns SILICON N-Channel 9.7m Ω @ 81A, 10V 5V @ 250μA 10720pF @ 50V 241nC @ 10V 105ns 74 ns 30V 200V 200V 5 V 130A Tc 520A 760 mJ 10V ±30V
    IRFP150NPBF IRFP150NPBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 1998 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 15.875mm ROHS3 Compliant Contains Lead, Lead Free 42A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-247-3 No SVHC 5.45mm 24.99mm 5.3mm 36mOhm Through Hole -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE 1 FET General Purpose Power 1 TO-247AC DRAIN Single 140W 11 ns 4V 160W Tc 270 ns 42A 175°C SWITCHING 45 ns SILICON N-Channel 36m Ω @ 23A, 10V 4V @ 250μA 1900pF @ 25V 110nC @ 10V 56ns 40 ns 20V 100V 100V 4 V 42A Tc 420 mJ 10V ±20V
    IRFS4115TRLPBF IRFS4115TRLPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2011 HEXFET® Active 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Lead Free No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.826mm 9.652mm 11.8MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 375W 18 ns 375W Tc 195A SWITCHING 41 ns SILICON N-Channel 12.1m Ω @ 62A, 10V 5V @ 250μA 5270pF @ 50V 120nC @ 10V 73ns 39 ns 20V 150V 99A 195A Tc 10V ±20V
    IRFS4321TRLPBF IRFS4321TRLPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2010 HEXFET® Active 1 (Unlimited) 175°C -55°C 10.668mm ROHS3 Compliant Lead Free No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 5.084mm 9.65mm 15MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 1 1 Single 350W 18 ns 5V 12mOhm D2PAK 350W Tc 85A 175°C 25 ns N-Channel 15mOhm @ 33A, 10V 5V @ 250μA 4460pF @ 25V 110nC @ 10V 60ns 35 ns 30V 150V 5 V 85A Tc 150V 4.46nF 10V ±30V 15 mΩ
    SPB80P06PGATMA1 SPB80P06PGATMA1 Infineon Technologies $0.00
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    		 download 13 Weeks Surface Mount Tape & Reel (TR) 1999 SIPMOS® no Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead -80A 3 AVALANCHE RATED TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant 4.4mm Surface Mount -55°C~175°C TJ -60V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 1 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 340W 24 ns -3V -60V 340W Tc -80A 175°C 56 ns SILICON P-Channel 23m Ω @ 64A, 10V 4V @ 5.5mA 5033pF @ 25V 173nC @ 10V 18ns 30 ns 20V -60V 80A Tc 60V 10V ±20V
    IPB009N03LGATMA1 IPB009N03LGATMA1 Infineon Technologies $0.00
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    		 download 39 Weeks Surface Mount Tape & Reel (TR) 2008 OptiMOS™ no Not For New Designs 1 (Unlimited) 6 EAR99 ROHS3 Compliant 7 LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE TO-263-7, D2Pak (6 Leads + Tab) not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G6 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-263AA DRAIN 250W 26 ns 250W Tc 180A SWITCHING 30V 103 ns SILICON N-Channel 0.95m Ω @ 100A, 10V 2.2V @ 250μA 25000pF @ 15V 227nC @ 10V 14ns 22 ns 20V 180A Tc 30V 4.5V 10V ±20V
    BSZ060NE2LSATMA1 BSZ060NE2LSATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2013 OptiMOS™ no Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead Tin 8 8-PowerTDFN No SVHC not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL NO LEAD NOT SPECIFIED NOT SPECIFIED 8 S-PDSO-N3 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 2.1W 2.5 ns 2V 25V 2.1W Ta 26W Tc 12A SWITCHING 11 ns SILICON N-Channel 6m Ω @ 20A, 10V 2V @ 250μA 670pF @ 12V 9.1nC @ 10V 2.2ns 1.8 ns 20V 12A Ta 40A Tc 4.5V 10V ±20V
    BSC054N04NSGATMA1 BSC054N04NSGATMA1 Infineon Technologies $0.00
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    		 download 26 Weeks Surface Mount Tape & Reel (TR) 2013 OptiMOS™ no Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant Contains Lead Tin 8 8-PowerTDFN not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL FLAT NOT SPECIFIED NOT SPECIFIED 8 R-PDSO-F5 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 57W 40V 2.5W Ta 57W Tc 17A SWITCHING 0.0054Ohm SILICON N-Channel 5.4m Ω @ 50A, 10V 4V @ 27μA 2800pF @ 20V 34nC @ 10V 2.6ns 20V 17A Ta 81A Tc 324A 35 mJ 10V ±20V
    IRFL4315TRPBF IRFL4315TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 1999 HEXFET® Active 1 (Unlimited) 4 EAR99 6.6802mm ROHS3 Compliant Contains Lead, Lead Free 2.6A No 3 TO-261-4, TO-261AA No SVHC 1.8mm 3.7mm 185Ohm Surface Mount -55°C~150°C TJ 150V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 30 R-PDSO-G4 1 FET General Purpose Power 1 DRAIN Single 2.8W 8.4 ns 5V 2.8W Ta 2.6A 150°C SWITCHING 20 ns SILICON N-Channel 185m Ω @ 1.6A, 10V 5V @ 250μA 420pF @ 25V 19nC @ 10V 21ns 19 ns 30V 150V 150V 5 V 2.6A Ta 10V ±30V
    BSC050N04LSGATMA1 BSC050N04LSGATMA1 Infineon Technologies $0.00
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    		 download 39 Weeks Surface Mount Tape & Reel (TR) 2004 OptiMOS™ no Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant Contains Lead 8 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE 8-PowerTDFN No SVHC not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL FLAT NOT SPECIFIED NOT SPECIFIED 8 R-PDSO-F5 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 57W 40V 2.5W Ta 57W Tc 85A SWITCHING 0.0072Ohm SILICON N-Channel 5m Ω @ 50A, 10V 2V @ 27μA 3700pF @ 20V 47nC @ 10V 3.8ns 20V 18A Ta 85A Tc 340A 35 mJ 4.5V 10V ±20V
    SPD09P06PLGBTMA1 SPD09P06PLGBTMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2008 SIPMOS® no Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AB Not Halogen Free 42W -60V 42W Tc 9.7A 0.25Ohm SILICON P-Channel 250m Ω @ 6.8A, 10V 2V @ 250μA 450pF @ 25V 21nC @ 10V 20V 9.7A Tc 60V 70 mJ 4.5V 10V ±20V
    IRF1310NSTRLPBF IRF1310NSTRLPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 1998 HEXFET® Active 1 (Unlimited) 2 SMD/SMT EAR99 10.668mm ROHS3 Compliant Lead Free Tin 42A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm 36mOhm Surface Mount -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 3.8W 11 ns 4V 3.8W Ta 160W Tc 270 ns 42A SWITCHING 45 ns SILICON N-Channel 36m Ω @ 22A, 10V 4V @ 250μA 1900pF @ 25V 110nC @ 10V 56ns 40 ns 20V 100V 100V 4 V 42A Tc 420 mJ 10V ±20V
    IRL530NSTRLPBF IRL530NSTRLPBF Infineon Technologies $0.00
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    Min: 1

    Mult: 1

    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2004 HEXFET® Active 1 (Unlimited) 2 SMD/SMT EAR99 10.668mm ROHS3 Compliant Contains Lead, Lead Free 17A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm 120mOhm Surface Mount -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 3.8W 7.2 ns 2V 3.8W Ta 79W Tc 210 ns 17A SWITCHING 30 ns SILICON N-Channel 100m Ω @ 9A, 10V 2V @ 250μA 800pF @ 25V 34nC @ 5V 53ns 26 ns 20V 100V 100V 2 V 17A Tc 60A 4V 10V ±20V